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1. 发明专利

JP2009132552A Method of manufacturing silicon single crystal 有权
标题翻译：制造硅单晶的方法
公开(公告)号：JP2009132552A
公开(公告)日：2009-06-18
申请号：JP2007309243
申请日：2007-11-29
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： FU SHINRIN , MINAMI TOSHIRO
IPC分类号： C30B29/06 , C30B15/22
摘要： PROBLEM TO BE SOLVED: To manufacture silicon single crystals with high productivity at a low cost, by remelting the single crystal when it is dislocated during being drawn up and grown.
SOLUTION: In a method of manufacturing silicon single crystals by MCZ (magnetic field-applied Czochralski) method provided with a quartz crucible 13 filled with a silicon melt 12, a side heater 15 and a bottom heater 16, a radiation shield 19 for shielding the silicon single crystal 18 from radiation from the side heater 15, electromagnets 20 and 21 and the like; when the silicon single crystal 18 being drawn up and grown is dislocated, a gap X between the lower end of the radiation shield 19 and the surface of the silicon melt 12 is enlarged and the dislocated silicon single crystal 18 is lowered to be in a non-magnetic field state and melted in the silicon melt 12. Thereafter, a magnetic field is applied, and the gap X is returned to be in the single crystal draw-up condition to re-draw up single crystals.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了以低成本高生产率制造单晶硅，通过在制造和生长时脱离单晶时重熔单晶。解决方案：在通过设置有填充有硅熔体12的石英坩埚13，侧加热器15和底部加热器16的MCZ（磁场施加切克劳斯基）法制造单晶硅的方法中，辐射屏蔽19 用于屏蔽硅单晶18免受来自侧加热器15，电磁体20和21等的辐射; 当被拉伸和生长的硅单晶18脱位时，辐射屏蔽体19的下端与硅熔体12的表面之间的间隙X扩大，脱硅单晶18降低到非 - 磁场状态并在硅熔体12中熔化。此后，施加磁场，并且间隙X返回到单晶拉制状态以重新制备单晶。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2009057270A Method of raising silicon single crystal 审中-公开
标题翻译：提高硅单晶的方法
公开(公告)号：JP2009057270A
公开(公告)日：2009-03-19
申请号：JP2008153677
申请日：2008-06-12
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： MINAMI TOSHIRO
IPC分类号： C30B15/00 , C30B29/06
摘要： PROBLEM TO BE SOLVED: To provide a method of raising silicon single crystal in which a rate of variability of a neck diameter is controlled within a predetermined range, and translocation in the neck can be eliminated at an early stage in cultivation of silicon single crystal by a Czochralski method.
SOLUTION: The method of raising silicon single crystal comprises: dipping seed crystal into a raw material silicon melt and pulling up; cultivating a neck; and sequentially increasing the diameter to cultivate single crystal of a predetermined crystal diameter, and is characterized in that the neck diameter is made to increase and decrease and neck cultivation is performed, in that case when a value which divides a neck diameter difference (A-B) between adjoining inflection points P
1 and P
2 of the fluctuating neck diameter by a neck length L between the inflection points is made a neck diameter variation rate, the neck diameter variation rate is made 0.05 or more and less than 0.5.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决问题的方法：提供一种提高将颈部直径变异率控制在预定范围内的单晶硅的方法，并且可以在早期阶段消除颈部易位单晶由Czochralski法。解决方案：提高硅单晶的方法包括：将晶种浸入原料硅熔体并拉起; 培养脖子并依次增加直径以培养预定晶体直径的单晶，其特征在于使颈部直径增大和减小，并进行颈部培养，在这种情况下，当将颈部直径差（AB）在颈部直径的变化颈部的相邻拐点P＆lt; SB＆gt; 1＆lt; SB＆gt; 2＆lt; / SB＆gt;之间，使颈部直径变化率，颈部直径变化率为0.05以上且小于0.5。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2008189523A Method for manufacturing single crystal 审中-公开
标题翻译：制造单晶的方法
公开(公告)号：JP2008189523A
公开(公告)日：2008-08-21
申请号：JP2007026259
申请日：2007-02-06
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： MINAMI TOSHIRO
IPC分类号： C30B29/06 , C30B15/20
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a single crystal through which single crystal having a high oxygen concentration above a given concentration over the entire length and having a uniform in-plane oxygen concentration distribution can be obtained.
SOLUTION: The method comprises rotating a crucible 3 at a rotating speed in the range of between 0.2-5.0 rpm in a state where the reduction ratio of the strength of the magnetic field directing from the lower part to the upper part along the direction of the pulling-up axis of the single crystal to at least 0.4 Gauss/mm in the region from the solid-liquid interface M2 that is the boundary plane between the single crystal C and the melt liquid M to at least a given depth d1 in the melt liquid when pulling-up the single crystal C, and rotating the single crystal C in the reverse direction of the rotating direction of the crucible 3 at a rotating speed of at least 8 rpm.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造单晶的方法，通过该方法可以获得在整个长度上具有高于给定浓度的高氧浓度并且具有均匀的面内氧浓度分布的单晶。解决方案：该方法包括以0.2-5.0rpm的范围内的转速旋转坩埚3，其中从下部到上部的磁场的强度的降低比沿着在从作为单晶C和熔融液体M之间的边界面的固液界面M2到至少给定深度d1的区域中，单晶的提升轴的方向为至少0.4高斯/ mm 在提升单晶C时在熔融液中，并且以至少8rpm的转速沿与坩埚3的旋转方向相反的方向旋转单晶C. 版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2012136399A Silica glass crucible for pulling silicon single crystal 有权
标题翻译：二氧化硅玻璃可溶于硅胶单晶
公开(公告)号：JP2012136399A
公开(公告)日：2012-07-19
申请号：JP2010290380
申请日：2010-12-27
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： ICHINOKURA MASATO , MINAMI TOSHIRO , FUKAZAWA YUJI , SUGANO AKIRA
IPC分类号： C30B29/06 , C03B20/00 , C30B15/10
CPC分类号： Y02P40/57
摘要： PROBLEM TO BE SOLVED: To provide a silica glass crucible for pulling a silicon single crystal, capable of suppressing the occurrence of brown mold and the occurrence of air pockets in the silicon single crystal and improving pulling yield of the silicon single crystal.SOLUTION: The silica glass crucible having a straight cylinder section and a bottom section comprises: an innermost layer comprising a silica glass film with a thickness of 0.02-0.2 mm formed by polysilazane coating; an inner layer that comprises a transparent silica glass and has an area in contact with the innermost layer wherein the OH group concentration is less than 30 ppm and the thickness is 3-5 mm; and an outer layer comprising an opaque silica glass.
摘要翻译：要解决的问题：提供一种能够抑制硅单晶的发生和硅单晶中的气泡的发生并提高硅单晶的拉伸率的用于拉出单晶硅的石英玻璃坩埚。解决方案：具有直筒部分和底部部分的石英玻璃坩埚包括：最内层，其包含通过聚硅氮烷涂层形成的厚度为0.02-0.2mm的二氧化硅玻璃膜; 内层，其包含透明石英玻璃，并且具有与最内层接触的面积，其中OH基浓度小于30ppm，厚度为3-5mm; 以及包含不透明二氧化硅玻璃的外层。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2012015298A Silicon wafer and method of manufacturing the same 有权
标题翻译：硅晶片及其制造方法
公开(公告)号：JP2012015298A
公开(公告)日：2012-01-19
申请号：JP2010149974
申请日：2010-06-30
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： MINAMI TOSHIRO , KASHIMA KAZUHIKO
IPC分类号： H01L21/322 , C30B29/06 , C30B33/02
摘要： PROBLEM TO BE SOLVED: To provide a silicon wafer which can improve production yield of semiconductor devices by minimizing occurrence of slip transition in heat treatment during production of semiconductor devices even when the silicon wafer has a large diameter, and to provide a method of manufacturing the same.SOLUTION: A silicon wafer 1 has a nitrogen concentration of 5.0×10-5.0×10atoms/cm, thickness of a defect free layer 2a of the first surface 2 where a semiconductor device is formed is 2.0-10.0 μm, oxygen precipitate density in a first bulk layer 2b up to the depth of 180 μm from the first face 2 located inward of the defect free layer 2a of the first face 2 is 0.7×10-1.3×10pieces/cm, and the thickness 3a of a defect free layer 3a of a second face 3 facing the first face 2 is smaller than that of the defect free layer 2a of the first face 2 and in the range of 1.0-9.0 μm.
摘要翻译：要解决的问题：提供一种硅晶片，即使当硅晶片具有大直径时，也可以通过最小化在半导体器件的制造期间的热处理中的滑移转变的发生而提高半导体器件的产量，并提供一种方法的制造相同。＆lt; P＆gt;解决方案：硅晶片1的氮浓度为5.0×10 -6 / 10 -5 / 形成半导体器件的第一表面2的无缺陷层2a的厚度为2.0-10.0μm，第一体积层2b中的氧沉淀密度直到位于第一面2的无缺陷层2a的内侧的第一面2的180μm的深度为0.7×10 10 -1.3×10 10 件/ cm 3 ，面向第一面2的第二面3的无缺陷层3a的厚度3a小于缺陷第一面2的自由层2a和1.0-9.0μm的范围。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2008222483A Manufacturing method of silicon single crystal 有权
标题翻译：硅单晶的制造方法
公开(公告)号：JP2008222483A
公开(公告)日：2008-09-25
申请号：JP2007062037
申请日：2007-03-12
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： MINAMI TOSHIRO
IPC分类号： C30B29/06 , C30B15/20 , H01L21/322 , H01L21/324
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a silicon single crystal capable of pulling up the silicon single crystal suitable for manufacturing a silicon wafer for particle monitor wherein the crystal defect detected as particles is low density at a high productivity and at a low cost.
SOLUTION: A CZ method is used, and a gap between a radiation shield 6 and a molten liquid surface is set to 15-30 mm, and a temperature zone width and a pulling up speed are set so that a time experiencing 1,100-1,000°C after solidification may be ≥20 min and ≤200 min, and also crystal rotation, crucible rotation and a magnetic field strength are adjusted so that solid-liquid interface height may be ≤30 mm and doping is performed in a nitrogen concentration of 5E13-5E15 atoms/cm
3 .
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种能够提取适合于制造用于颗粒监测器的硅晶片的硅单晶的硅单晶的制造方法，其中以高生产率检测为颗粒的晶体缺陷为低密度，以低成本。解决方案：使用CZ方法，并且将辐射屏蔽6和熔融液面之间的间隙设定为15-30mm，并且设定温度带宽度和提升速度，使得经历1,100 固化后-1000℃可以≥20分钟和≤200分钟，并且还调整晶体旋转，坩埚旋转和磁场强度，使得固 - 液界面高度可以≤30mm，并且以氮浓度进行掺杂的5E13-5E15原子/ cm 3 SP / 3。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2012136397A Silica glass crucible for pulling silicon single crystal 有权
标题翻译：二氧化硅玻璃可溶于硅胶单晶
公开(公告)号：JP2012136397A
公开(公告)日：2012-07-19
申请号：JP2010290378
申请日：2010-12-27
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： ICHINOKURA MASATO , MINAMI TOSHIRO , FUKAZAWA YUJI , SUGANO AKIRA
IPC分类号： C30B29/06 , C03B20/00 , C30B15/10
CPC分类号： Y02P40/57
摘要： PROBLEM TO BE SOLVED: To provide a silica glass crucible for pulling a silicon single crystal, capable of suppressing the occurrence of brown mold and the occurrence of air pockets in the silicon single crystal and improving pulling yield of the silicon single crystal.SOLUTION: The silica glass crucible having a straight cylinder section and a bottom section comprises: an innermost layer that comprises a transparent silica glass and has a chlorine or fluorine concentration of 50-10,000 ppm and a thickness of 0.05-0.2 mm; an inner layer that comprises a transparent silica glass and has an area in contact with the innermost layer wherein the OH group concentration is less than 30 ppm and the thickness is 3-5 mm; and an outer layer comprising an opaque silica glass.
摘要翻译：要解决的问题：提供一种能够抑制硅单晶的发生和硅单晶中的气泡的发生并提高硅单晶的拉伸率的用于拉出单晶硅的石英玻璃坩埚。解决方案：具有直筒部分和底部部分的石英玻璃坩埚包括：最内层，其包含透明石英玻璃并且具有50-10,000ppm的氯或氟浓度和0.05-0.2mm的厚度; 内层，其包含透明石英玻璃，并且具有与最内层接触的面积，其中OH基浓度小于30ppm，厚度为3-5mm; 以及包含不透明二氧化硅玻璃的外层。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2012136398A Silica glass crucible for pulling silicon single crystal 有权
标题翻译：二氧化硅玻璃可溶于硅胶单晶
公开(公告)号：JP2012136398A
公开(公告)日：2012-07-19
申请号：JP2010290379
申请日：2010-12-27
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： ICHINOKURA MASATO , MINAMI TOSHIRO , FUKAZAWA YUJI , SUGANO AKIRA
IPC分类号： C30B29/06 , C03B20/00 , C30B15/10
CPC分类号： Y02P40/57
摘要： PROBLEM TO BE SOLVED: To provide a silica glass crucible for pulling a silicon single crystal, capable of suppressing the occurrence of brown mold and the occurrence of air pockets in the silicon single crystal and improving pulling yield of the silicon single crystal.SOLUTION: The silica glass crucible having a straight cylinder section and a bottom section comprises: an innermost layer that comprises a borosilicate glass and has a thickness of 0.05-0.5 mm; an inner layer that comprises a transparent silica glass and has an area in contact with the innermost layer wherein the OH group concentration is less than 30 ppm and the thickness is 3-5 mm; and an outer layer comprising an opaque silica glass.
摘要翻译：要解决的问题：提供一种能够抑制硅单晶的发生和硅单晶中的气泡的发生并提高硅单晶的拉伸率的用于拉出单晶硅的石英玻璃坩埚。解决方案：具有直圆筒部分和底部部分的石英玻璃坩埚包括：包含硼硅酸盐玻璃的最内层，其厚度为0.05-0.5mm; 内层，其包含透明石英玻璃，并且具有与最内层接触的面积，其中OH基浓度小于30ppm，厚度为3-5mm; 以及包含不透明二氧化硅玻璃的外层。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2008189522A Method for manufacturing single crystal 有权
标题翻译：制造单晶的方法
公开(公告)号：JP2008189522A
公开(公告)日：2008-08-21
申请号：JP2007026258
申请日：2007-02-06
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： MINAMI TOSHIRO
IPC分类号： C30B29/06 , C30B15/00
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a single crystal which can stably manufacture single crystal having a uniform oxygen concentration over the entire length by controlling the gap size between the radiation shield and the surface of the melt liquid and by controlling the flow speed of the gas flowing between the radiation shield and the single crystal.
SOLUTION: The method comprises controlling the fluctuation of the first gap d1 that is formed between the surface M1 of the silicon melt liquid and the lower end of the radiation shield 6 located above the melt liquid within ±1 mm, and forming a gas flow directing from the upper part to the lower part in the furnace body 2, and at the same time controlling the flow speed of the gas G flowing through the second gap d2 that is formed between the radiation shield 6 and the single crystal C and is located at the nearest point to the surface M1 of the silicon melt liquid to at least 1 m/sec and not higher than 15 m/sec, from the start of the pulling-up of the single crystal C to its end.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种制造单晶的方法，其可以通过控制辐射屏蔽和熔体液体的表面之间的间隙尺寸以及通过控制熔融液表面之间的间隙尺寸来稳定地制造整个长度上具有均匀氧浓度的单晶控制在辐射屏蔽和单晶之间流动的气体的流速。解决方案：该方法包括控制在熔融液体的表面M1和位于熔融液体上方的辐射屏蔽6的下端之间形成的第一间隙d1的波动在±1mm内，并形成气体流从炉体2的上部向下部引导，同时控制流过形成在辐射屏蔽6与单晶C之间的第二间隙d2的气体G的流速，以及从单晶C的起始开始到其末端，位于距离硅熔液的表面M1最近的点至少1m / sec且不高于15m / sec。版权所有（C）2008，JPO＆INPIT

10. 发明专利

JP2012201564A Silicon single crystal pulling apparatus, and method of pulling silicon single crystal using the same 有权
标题翻译：硅单晶拉丝装置及其使用硅单晶的方法
公开(公告)号：JP2012201564A
公开(公告)日：2012-10-22
申请号：JP2011068925
申请日：2011-03-25
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： TOYODA SATOKO , MINAMI TOSHIRO , MAEDA SUSUMU , NAGAI YUTA
IPC分类号： C30B29/06 , C30B15/00
摘要： PROBLEM TO BE SOLVED: To provide a silicon single crystal pulling apparatus capable of discharging carbon-containing gas generated from a carbon crucible efficiently to the outside of a furnace without complicating the apparatus, and pulling a silicon single crystal having a low carbon concentration without increasing manufacturing cost, and to provide a pulling method of the silicon single crystal using the apparatus.SOLUTION: This silicon single crystal pulling apparatus 1 includes a carbon crucible 10b holding a quartz crucible 10a on the inner surface, and also includes a flow-straightening member 40 including a cylindrical flow-straightening part, provided in the loaded state on the upper end 10ba of the carbon crucible 10b, for shielding a part of carrier gas G passing a first space S1 over the upper end of the carbon crucible 10b, and for heightening flow velocity of the carrier gas G passing a second space S2 just over the upper end of the carbon crucible 10b, which is a lower part of the first space S1.
摘要翻译：要解决的问题：提供一种能够将从碳坩埚产生的含碳气体有效地排放到炉外的硅单晶拉制装置，而不会使装置复杂化，并且拉动具有低碳的硅单晶浓度而不增加制造成本，并且使用该装置提供单晶硅的拉制方法。解决方案：该硅单晶拉制装置1包括在内表面上保持石英坩埚10a的碳坩埚10b，并且还包括流动整流构件40，该整流构件40包括圆柱形流动矫正部，其以负载状态设置在碳坩埚10b的上端部10ba，用于遮蔽通过碳坩埚10b的上端的第一空间S1的载气G的一部分，并且提高经过刚刚过去的第二空间S2的载气G的流速作为第一空间S1的下部的碳坩埚10b的上端部。版权所有（C）2013，JPO＆INPIT

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