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1. 发明专利

JP2011114252A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2011114252A
公开(公告)日：2011-06-09
申请号：JP2009271114
申请日：2009-11-30
申请人： Central Res Inst Of Electric Power Ind , Toshiba Corp , 株式会社東芝 , 財団法人電力中央研究所
发明人： HATAKEYAMA TETSUO , NAGANO MASAHIRO , SUZUKI TAKUMA , SHINOHE TAKASHI , TSUCHIDA SHUICHI
IPC分类号： H01L29/78 , H01L21/336 , H01L29/12 , H01L29/47 , H01L29/872
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device that is prevented from being deteriorated in performance and reliability due to BPD. SOLUTION: The semiconductor device includes a silicon carbide semiconductor substrate of a first conductivity type, a first silicon carbide semiconductor layer of the first conductivity type formed on the substrate and having a lower impurity concentration than the substrate, a second silicon carbide semiconductor layer of the first conductivity type formed on the first silicon carbide semiconductor layer and having a higher impurity concentration than the first silicon carbide semiconductor layer, and a third silicon carbide semiconductor layer formed on the second silicon carbide semiconductor layer and having a lower impurity concentration than the second silicon carbide semiconductor layer. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供防止由于BPD而导致的性能和可靠性劣化的半导体器件。解决方案：半导体器件包括第一导电类型的碳化硅半导体衬底，第一导电类型的第一碳化硅半导体层，其形成在衬底上并且具有比衬底更低的杂质浓度;第二碳化硅半导体形成在第一碳化硅半导体层上并且具有比第一碳化硅半导体层更高的杂质浓度的第一导电类型的层和形成在第二碳化硅半导体层上并且具有比第一碳化硅半导体层低的杂质浓度的第三碳化硅半导体层第二碳化硅半导体层。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2007201343A Manufacturing method of silicon carbide semiconductor element 审中-公开
标题翻译：碳化硅半导体元件的制造方法
公开(公告)号：JP2007201343A
公开(公告)日：2007-08-09
申请号：JP2006020605
申请日：2006-01-30
申请人： Central Res Inst Of Electric Power Ind , 財団法人電力中央研究所
发明人： NAGANO MASAHIRO , NAKAMURA TOMONOBU , TSUCHIDA SHUICHI
IPC分类号： H01L21/316 , H01L21/336 , H01L29/12 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a silicon carbide semiconductor element capable of efficiently removing or inactivating a carbon cluster remaining on an SiO
2 /SiC boundary even when forming an insulating film having a certain amount of thickness.
SOLUTION: In the manufacturing method of the silicon carbide semiconductor element in the process of forming the insulating film; the thickness of a thermally oxidized film is increased on the surface of a substrate by thermally treating the substrate for which a silicon carbide epitaxial film is formed under the atmosphere of an oxidized gas containing O
2 and/or H
2 O, and then the process of removing the carbon cluster existing on the SiO
2 /SiC boundary or the like by thermally treating the substrate under the atmosphere of a gas containing NO, N
2 O or NO
2 is repeated for two or more times.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供能够有效地除去或失活保留在SiO 2 SBB / SiC界面上的碳簇的碳化硅半导体元件的制造方法，即使在形成具有一定的厚度。解决方案：在形成绝缘膜的过程中的碳化硅半导体元件的制造方法中，热氧化膜的厚度在基板的表面上通过热处理形成有碳化硅外延膜的基板在含有O 2 SBB的氧化气体和/或H 然后通过在含有NO的气体的气氛下热处理基板，除去存在于SiO 2 / SB / SiC界面等上的碳簇的工序，N 2 O或NO 2 重复两次或更多次。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2005310977A Ion beam processing method 审中-公开
标题翻译：离子束处理方法
公开(公告)号：JP2005310977A
公开(公告)日：2005-11-04
申请号：JP2004124486
申请日：2004-04-20
申请人： Central Res Inst Of Electric Power Ind , 財団法人電力中央研究所
发明人： NAGANO MASAHIRO , YAMADA AKIRA , TOYODA KISHO
IPC分类号： B23K15/00 , C23F4/00 , H01J37/305 , H01L21/302
摘要： PROBLEM TO BE SOLVED: To shorten a processing time period without degrading a surface roughness of a processing face.
SOLUTION: In an ion beam processing method for irradiating gas cluster ion beams to process works, the processing is performed by stepwise or continuously decreasing a value of an acceleration voltage which accelerates the gas cluster ion beams.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：缩短加工时间而不降低加工面的表面粗糙度。解决方案：在用于照射气体簇离子束以处理工件的离子束处理方法中，通过逐步或连续地减小加速气体簇离子束的加速电压的值来执行处理。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2007220888A Silicon carbide semiconductor device having radiation resistance by superlattice structure and its operation method 审中-公开
标题翻译：具有超导结构耐辐射性的硅碳化硅半导体器件及其操作方法
公开(公告)号：JP2007220888A
公开(公告)日：2007-08-30
申请号：JP2006039357
申请日：2006-02-16
申请人： Central Res Inst Of Electric Power Ind , 財団法人電力中央研究所
发明人： NAGANO MASAHIRO , NAKAMURA TOMONOBU , TSUCHIDA SHUICHI
IPC分类号： H01L23/522 , C23C16/42 , H01L21/283 , H01L21/316 , H01L21/318 , H01L21/768
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device that can be stably operated even under a severe irradiation environment of radiation ray such as the vicinity of a nuclear reactor or a nuclear fusion reactor, and to provide its operation method. SOLUTION: The silicon carbide semiconductor device is composed so as to inhibit penetration of a radiation into the device by reflecting and dispersing the radiation emitted from the outside on a large number of interfaces in an insulating film, while making the insulating film such as a surface protection film formed on a silicon carbide epitaxial film and an interlayer insulating film as a superlattice multilayer structure such as a multilayer film in which an SiO 2 film and an SiN film are alternately laminated. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供即使在诸如核反应堆或核聚变反应堆附近的放射线的严酷照射环境下也能够稳定运行的碳化硅半导体器件，并提供其操作方法。解决方案：碳化硅半导体器件被构成为通过将绝缘膜上的大量界面反射和分散从外部发射的辐射来抑制辐射穿透到器件中，同时使绝缘膜等作为形成在碳化硅外延膜和层间绝缘膜上的表面保护膜，作为超薄晶格层叠层结构，例如交替层叠SiO 2 / SiO 2膜和SiN膜的多层膜。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2004061950A Display using semiconductor laser 审中-公开
公开(公告)号：JP2004061950A
公开(公告)日：2004-02-26
申请号：JP2002221598
申请日：2002-07-30
申请人： Central Res Inst Of Electric Power Ind , 財団法人電力中央研究所
发明人： NAGANO MASAHIRO
IPC分类号： H04N9/12 , G09F9/33 , H01S5/40
摘要： PROBLEM TO BE SOLVED: To provide a display which can cope with upsizing, and has also high image quality and low power consumption. SOLUTION: The display 1 displays an image with an assembly 4 of pixels, by forming one pixel 3 out of three pieces of semiconductor laser 2A, 2B, 2C emitting red, green, and blue laser light, respectively, forming the assembly 4 of pixels by two-dimensionally arraying a plurality of pixels 3, and adjusting electrical inputs to each of the semiconductor laser 2A, 2B, 2C based on chromatic information corresponding to each pixel 3. COPYRIGHT: (C)2004,JPO

6. 发明专利

JP2009044083A Method of detecting defects of silicon carbide single crystal wafer and method of manufacturing silicon carbide semiconductor device 有权
标题翻译：检测碳化硅单晶的缺陷的方法及制造硅碳化硅半导体器件的方法
公开(公告)号：JP2009044083A
公开(公告)日：2009-02-26
申请号：JP2007210008
申请日：2007-08-10
申请人： Central Res Inst Of Electric Power Ind , 財団法人電力中央研究所
发明人： TSUCHIDA SHUICHI , KAMATA ISAO , NAGANO MASAHIRO
IPC分类号： H01L21/66 , G01N23/207
摘要： PROBLEM TO BE SOLVED: To specify a position and type of a specific basal-plane defect in a wafer surface nondestructively by discriminating the basal-plane defect from other dislocations and stacking faults when it is intended to manufacture a silicon carbide semiconductor device from a silicon carbide single crystal wafer, and what is more, to manufacture, based on the specified result, a silicon carbide semiconductor device having device characteristics which are free of any influence coming from the crystal defects.
SOLUTION: The method of detecting defects of silicon carbide single crystal wafer is characterized by: making a reflection X-ray topographic measurement in a wafer surface of a silicon carbide single crystal wafer; detecting a specific basal-plane defect nondestructively by identifying a specific diffraction pattern on the basis of the X-ray diffraction data in the wafer surface obtained by the reflection X-ray topographic measurement; and acquiring positional information of the detected basal-plane defect in the wafer surface. In addition, the method of manufacturing silicon carbide semiconductor device is set up using the method of detecting defects.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：通过在制造碳化硅半导体器件时识别基底缺陷与其他位错和堆垛层错来指定晶片表面中特定基面缺陷的位置和类型从碳化硅单晶晶片，并且更具体地，基于指定的结果制造具有不受来自晶体缺陷的任何影响的器件特性的碳化硅半导体器件。检测碳化硅单晶晶片的缺陷的方法的特征在于：在碳化硅单晶晶片的晶片表面进行反射X射线形貌测量; 通过基于通过反射X射线形貌测量获得的晶片表面中的X射线衍射数据识别特定的衍射图案，非破坏性地检测特定的基底面缺陷; 并且获取晶片表面中检测到的基底缺陷的位置信息。此外，使用检测缺陷的方法来建立制造碳化硅半导体器件的方法。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2006198641A Ion beam-machining method 有权
标题翻译：离子加工方法
公开(公告)号：JP2006198641A
公开(公告)日：2006-08-03
申请号：JP2005011391
申请日：2005-01-19
申请人： Central Res Inst Of Electric Power Ind , 財団法人電力中央研究所
发明人： YAMADA SUSUMU , NAGANO MASAHIRO
IPC分类号： B23K15/00 , B82B3/00
摘要： PROBLEM TO BE SOLVED: To provide an ion beam-machining method for inexpensively manufacturing a projecting part of nano size in a short period of time.
SOLUTION: Nano-particles 2 are diffused in an adhesive 1, and coated on a face 3 to be worked. The face 3 to be worked is irradiated with gas cluster ion beams 4 with the nano particles 2 being fixed to the face 3, and the face 3 except for a mask part by nano particles 2 is worked.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于在短时间内廉价地制造纳米尺寸的突出部分的离子束加工方法。解决方案：将纳米颗粒2扩散到粘合剂1中，并涂覆在待加工的表面3上。用纳米颗粒2固定在表面3上的待加工面3的气体簇离子束4照射，除了纳米粒子2以外的面罩3的面3被加工。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2012086273A Ion beam machining method 审中-公开
标题翻译：离子束加工方法
公开(公告)号：JP2012086273A
公开(公告)日：2012-05-10
申请号：JP2011250459
申请日：2011-11-16
申请人： Central Res Inst Of Electric Power Ind , 財団法人電力中央研究所
发明人： YAMADA SUSUMU , NAGANO MASAHIRO
IPC分类号： B23K15/00 , B01J19/08 , B23K15/08
摘要： PROBLEM TO BE SOLVED: To manufacture a nanosized protrusion in a short time at low cost.SOLUTION: An ion beam machining method includes the steps of: dispersing nanoparticles 2 in an adhesive agent 1 and applying the agent to a work surface 3; radiating a gas cluster ion beam 4 to the work surface 3 while the nanoparticles 2 are fixed to the work surface 3; and machining the work surface 3 other than parts masked by the nanoparticles 2.
摘要翻译：要解决的问题：以低成本在短时间内制造纳米尺寸突起。解决方案：离子束加工方法包括以下步骤：将纳米颗粒2分散在粘合剂1中并将试剂施加到工作表面3上; 在将纳米颗粒2固定到工作表面3上的同时，将气体团簇离子束4照射到工作表面3; 并加工除了被纳米颗粒2掩蔽的部分以外的工作表面3.版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2012074513A Method of manufacturing silicon carbide semiconductor element and method of manufacturing electronic device 有权
标题翻译：制造碳化硅半导体元件的方法和制造电子器件的方法
公开(公告)号：JP2012074513A
公开(公告)日：2012-04-12
申请号：JP2010217756
申请日：2010-09-28
申请人： Central Res Inst Of Electric Power Ind , 財団法人電力中央研究所
发明人： NAGANO MASAHIRO , JOHN ROSEN , TSUCHIDA SHUICHI
IPC分类号： H01L21/316 , H01L21/31 , H01L21/318
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a silicon carbide semiconductor element that can reduce interface level density by improving the quality of the interface between silicon carbide and an insulating film formed on the silicon carbide and the quality of the insulating film, and to provide a method of manufacturing an electronic device.SOLUTION: A main surface of a silicon carbide substrate 1 is surface-treated with a cleaning gas containing a hydrogen gas, and then the main surface is surface-treated with a nitrogen-containing gas to form an insulating film 2 on the main surface.

10. 发明专利

JP2013107788A Method for manufacturing silicon carbide wafer, silicon carbide wafer, silicon carbide semiconductor element, and power converting device 有权
标题翻译：制造硅碳化硅，碳化硅陶瓷，碳化硅半导体元件和功率转换器件的方法
公开(公告)号：JP2013107788A
公开(公告)日：2013-06-06
申请号：JP2011253283
申请日：2011-11-18
申请人： Central Research Institute Of Electric Power Industry , 一般財団法人電力中央研究所 , Kansai Electric Power Co Inc:The , 関西電力株式会社
发明人： NAGANO MASAHIRO , TSUCHIDA SHUICHI , NAKAYAMA KOJI , ASANO KATSUNORI
IPC分类号： C30B29/36 , C30B25/20
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon carbide wafer which prevents complication of a manufacture process, does not restrict a silicon carbide substrate, and is capable of more surely converting a basal plane dislocation (BPD) to a threading edge dislocation (TED).SOLUTION: This method includes the first step in which Si ion is injected into one direction of a silicon carbide substrate 1 or the substrate 1 is irradiated with an electron beam, the second step in which the silicon carbide substrate 1 is subjected to annealing, and the third step in which one direction side of the silicon carbide substrate 1 is epitaxially grown to form an epitaxial film 3. The ion to be injected into the silicon carbide substrate is at least one kind selected from a group comprising Si ion, C ion, H ion, He ion, P ion, Al ion B ion and N ion.
摘要翻译：要解决的问题：为了提供一种防止制造工艺的复杂化的碳化硅晶片的制造方法，不限制碳化硅衬底，并且能够更可靠地将基面位错（BPD）转换为穿线边缘错位（TED）。解决方案：该方法包括将Si离子注入到碳化硅衬底1的一个方向或者将衬底1照射电子束的第一步骤，其中碳化硅衬底1经受第二步骤退火，以及第三步骤，其中外延生长碳化硅衬底1的一个方向侧以形成外延膜3.要注入到碳化硅衬底中的离子是选自由以下组成的组中的至少一种：Si离子， C离子，H离子，He离子，P离子，Al离子B离子和N离子。版权所有（C）2013，JPO＆INPIT

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