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    • 1. 发明专利
    • Mask and method for near field exposure
    • 近场暴露的掩蔽和方法
    • JP2009093084A
    • 2009-04-30
    • JP2007265817
    • 2007-10-11
    • Canon Incキヤノン株式会社
    • TERAO AKIRAITO TOSHIKI
    • G03F1/00G03F1/68H01L21/027
    • PROBLEM TO BE SOLVED: To provide a mask for near field exposure which enhances a conversion rate from exposure light to near field light without increasing the intensity of the exposure light.
      SOLUTION: The mask for near field exposure includes, on its base material, a light-shielding film having patterns formed by aperture parts which are smaller than the wavelength of the light of a light source for exposure, and exposes an exposure-target object to near field light generated at the aperture parts of the light-shielding film. The base material includes grooves which are formed in the base material in correspondence to the aperture parts, and the grooves can increase the intensity of the near field light.
      COPYRIGHT: (C)2009,JPO&INPIT
    • 要解决的问题:提供用于近场曝光的掩模,其增强了从曝光光到近场光的转换率,而不增加曝光光的强度。 解决方案:用于近场曝光的掩模在其基材上包括具有小于用于曝光的光源的光的波长的孔部形成的图案的遮光膜,并且暴露曝光 - 目标物体到在遮光膜的开口部分处产生的近场光。 所述基材包括与所述孔部相对应地形成在所述基材中的槽,并且所述槽能够增加所述近场光的强度。 版权所有(C)2009,JPO&INPIT
    • 2. 发明专利
    • Near-field exposing method
    • 近场暴露方法
    • JP2008227337A
    • 2008-09-25
    • JP2007066187
    • 2007-03-15
    • Canon Incキヤノン株式会社
    • TERAO AKIRAITO TOSHIKI
    • H01L21/027
    • G03F7/70325G03F1/50G03F7/2014
    • PROBLEM TO BE SOLVED: To provide a near-field exposing method with which the pattern of a fine opening formed on an exposure mask can be accurately and efficiently exposed, with proximity EB lithography, to 1:1 with respect to an object to be exposed.
      SOLUTION: The present invention relates to a near-field exposing method for exposing an object to be exposed using near-field light generated in the opening of an exposure mask comprising a light shielding film having the opening, including the steps of: when an opening width of the opening of the exposure mask is defined as s(nm), a working pitch of the object to be exposed is defined as p(nm) and coefficients are defined as (a) and (b), determining the opening width so as to satisfy an equation (1), inequality (2), and inequality (3); preparing the exposure mask including the opening with the opening width; and exposing the object to be exposed by irradiating the exposure mask with exposure light.
      COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:提供一种近场曝光方法,其中形成在曝光掩模上的精细开口的图案可以利用邻近EB光刻被精确和有效地暴露于相对于物体的1:1 被暴露。 解决方案:本发明涉及一种使用在包括具有该开口的遮光膜的曝光掩模的开口中产生的近场光曝光待曝光物体的近场曝光方法,包括以下步骤: 当曝光掩模的开口的开口宽度被定义为s(nm)时,要暴露的对象的工作间距被定义为p(nm),并且系数被定义为(a)和(b),确定 开口宽度满足式(1),不等式(2)和不等式(3); 准备具有开口宽度的开口的曝光掩模; 通过用曝光灯照射曝光掩模来曝光待曝光的物体。 版权所有(C)2008,JPO&INPIT
    • 3. 发明专利
    • Near-field exposure mask, and method for forming resist pattern using the same
    • 近场曝光掩模,以及使用其形成耐蚀图案的方法
    • JP2008098263A
    • 2008-04-24
    • JP2006276052
    • 2006-10-10
    • Canon Incキヤノン株式会社
    • ITO TOSHIKIMIZUTANI NATSUHIKOTERAO AKIRA
    • H01L21/027G03F1/52G03F1/54G03F7/038G03F7/039
    • G03F7/2014B82Y10/00G03F1/50G03F7/70325
    • PROBLEM TO BE SOLVED: To provide a near-field exposure mask capable of restraining heating during exposure, and restraining a resist pattern from varying in size for each shot, and to provide a method of forming a resist pattern using the same.
      SOLUTION: The near-field exposure mask is equipped with a transparent mask base material 101, a shading layer 103, which contains silicon and is located on the transparent mask mother material, a reflecting layer 102 which is provided between the transparent mask mother material and the shading layer, and an opening pattern, which is smaller than the wavelength λ(nm) of exposure light and provided to both the reflecting layer 102 and shading layer 103. The near-field exposure mask is configured in such a manner that the reflection factor of an interface between the transparent mask mother material 101 and the reflecting layer is higher than that of an interface between the transparent mask mother material and shading layer of the near-field exposure mask that does not comprise the reflecting layer between the shading layer containing silicon on the transparent mask mother material and the transparent mask mother material.
      COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:提供一种能够在曝光期间抑制加热的近场曝光掩模,并且抑制每个镜头的抗蚀剂图案的尺寸变化,并且提供使用其形成抗蚀剂图案的方法。 解决方案:近场曝光掩模配备有透明掩模基材101,包含硅并位于透明掩模母材上的遮光层103,设置在透明掩模之间的反射层102 母材和遮光层,以及比曝光光的波长λ(nm)小并提供给反射层102和遮光层103的开口图案。近场曝光掩模以这种方式配置 透明掩模母材101与反射层之间的界面的反射系数高于不包括反射层的近场曝光掩模的透明掩模母材和遮光层之间的界面的反射系数 在透明掩模母材上含有硅的遮光层和透明掩模母材。 版权所有(C)2008,JPO&INPIT
    • 5. 发明专利
    • 光ポンピング磁力計および磁気センシング方法
    • 光泵浦和磁感测方法
    • JP2014215151A
    • 2014-11-17
    • JP2013092130
    • 2013-04-25
    • キヤノン株式会社Canon Inc
    • KOBAYASHI TETSUOTERAO AKIRA
    • G01R33/26
    • G01R33/26
    • 【課題】アルカリ金属原子の電子スピンの横緩和時間よりも短い周期で変動する磁場に対し磁力計の応答を向上させることが可能な光ポンピング磁力計を提供する。【解決手段】アルカリ金属原子集団を有するセル22とセル内のアルカリ金属原子集団のスピン偏極を生じさせるための円偏光ポンピング光の照射手段と、アルカリ金属原子集団のスピンを読み出すための直線偏光プローブ光の出射手段と、直線偏光プローブ光の偏光面の回転変位を検出するプローブ光検出系と、アルカリ金属原子集団に静磁場を印加するコイル17と、アルカリ金属原子集団のスピンを軸とした回転運動させるための振動磁場を印加する振動磁場印加コイル19と、出力信号と駆動電流の位相差を含む情報の検出手段と、を備え、静磁場から定まるラーモア周波数と振動磁場印加コイルへ入力される駆動電流の周波数の差である離調が、被測定磁場に対して所定の範囲内に設定可能に構成されている。【選択図】図1
    • 要解决的问题:提供一种能够提高磁力计对磁场的响应的光泵浦磁力计,该磁场在比碱金属原子的电子自旋的横越松弛时间更短的周期内波动。解决方案:光泵浦磁力计由 包括:具有碱金属原子聚集体的电池22; 用于产生电池中碱金属原子聚集体的自旋极化的圆偏振泵浦光的照射装置; 用于读取碱金属原子聚集体自旋的线性偏振探测光的发射装置; 探测光检测系统,用于检测线偏振探测光的偏振面的旋转位移; 用于向碱金属原子聚集体施加静磁场的线圈17; 振动磁场施加线圈19,用于通过使用碱金属原子聚集体的自旋作为轴来施加用于进行旋转运动的振动磁场; 以及包括输出信号和驱动电流之间的相位差的信息的检测装置,并且使得作为要从静磁场确定的拉莫尔频率与要输入到振动磁场应用的驱动电流的频率之间的差异的失谐 线圈可以设定在要测量的磁场的预定范围内。
    • 6. 发明专利
    • Near-field exposure method and near-field exposure apparatus
    • 近场暴露方法和近场暴露装置
    • JP2008141087A
    • 2008-06-19
    • JP2006327845
    • 2006-12-05
    • Canon Incキヤノン株式会社
    • TERAO AKIRAITO TOSHIKI
    • H01L21/027G03F1/00G03F1/68
    • PROBLEM TO BE SOLVED: To provide a near-field exposure method and a near-field exposure apparatus, which directly detect that an exposure mask and an object to be exposed adhere to each other, and which can detect their adhesion state with accuracy.
      SOLUTION: The near-field exposure method uses an exposure mask having a light shielding film and an opening smaller than a wavelength of the light from an exposure light source, and exposes a resist with a near-field light generated in the opening of the exposure mask by the light irradiated from the exposure light source. The near-field exposure method has a step for performing a near-field exposure, in which a near-field exposure mask is used as the exposure mask, where the near-field exposure mask is made of an material having a low transmission for a wavelength of the light irradiated from the exposure light source and a high transmission for a wavelength of a light irradiated from a measurement light source, and the adhesion state between the near-field exposure mask and the resist is detected by measuring an interference between measurement lights reflected from the near-field exposure mask and the resist.
      COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:为了提供一种近场曝光方法和近场曝光装置,其直接检测曝光掩模和被曝光物体彼此粘附,并且可以检测其粘附状态 准确性。 解决方案:近场曝光方法使用具有遮光膜和比来自曝光光源的光的波长小的开口的曝光掩模,并且在开口中产生的近场光曝光抗蚀剂 通过从曝光光源照射的光来曝光掩模。 近场曝光方法具有进行近场曝光的步骤,其中使用近场曝光掩模作为曝光掩模,其中近场曝光掩模由具有低透射率的材料制成 从曝光光源照射的光的波长和从测量光源照射的光的波长的高透射率,并且通过测量测量光之间的干涉来检测近场曝光掩模和抗蚀剂之间的粘附状态 从近场曝光掩模和抗蚀剂反射。 版权所有(C)2008,JPO&INPIT
    • 7. 发明专利
    • Measuring device for surface form, and measuring method therefor
    • 表面形状测量装置及其测量方法
    • JP2005077294A
    • 2005-03-24
    • JP2003309490
    • 2003-09-02
    • Canon Incキヤノン株式会社
    • TERAO AKIRA
    • G01B11/24
    • PROBLEM TO BE SOLVED: To easily measure a long-length of face to be measured with high accuracy.
      SOLUTION: The long-length of face 31 to be measured is made to face a circular reference surface 21, and measured by dividing in a longitudinal direction with a Fizeau-type interferometer 1. Calibration data for the reference surface pre-stored from each divided measurement data into a computer 10 are subtracted, and then the shape data for the whole of the face 31 are obtained, by connecting mutually adjacent divided measurement data. The calibration data for the reference surface are easily obtained by fitting a plurality of calibration data for cross sections, using a banded calibration surface with an equal length to the reference surface 21 to a polynomial, with the result that high precision only in the longitudinal direction of each divided measurement data is ensured. An error in divided measurement using a reference surface smaller than the surface to be measured is reduced effectively, and the cost of apparatus and the running cost for obtaining calibration data for the reference surface can be reduced.
      COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:以高精度容易地测量要测量的长的面部。 解决方案:要测量的面31的长度面向圆形参考表面21,并且通过用Fizeau型干涉仪1在纵向方向上分割来测量。预先存储的参考表面的校准数据 从每个划分的测量数据中减去计算机10,然后通过连接相互相邻的划分的测量数据来获得整个面部31的形状数据。 参考表面的校准数据可以通过使用多个用于横截面的校准数据,使用与参考表面21具有相等长度的带状校准表面多项式来容易地获得,结果是仅在纵向方向上具有高精度 确保每个划分的测量数据。 能够有效地降低使用比被测定面小的基准面的分割测量误差,能够降低用于获得基准面的校准数据的装置成本和运行成本。 版权所有(C)2005,JPO&NCIPI
    • 8. 发明专利
    • Mask for near-field exposure and near-field exposure method
    • 用于近场暴露和近场暴露方法的掩模
    • JP2008304816A
    • 2008-12-18
    • JP2007153620
    • 2007-06-11
    • Canon Incキヤノン株式会社
    • TERAO AKIRAITO TOSHIKI
    • G03F1/00G03F1/70H01L21/027
    • G03F7/2014B82Y10/00G03F1/50G03F7/70325G03F7/7035G03F7/70433
    • PROBLEM TO BE SOLVED: To provide a mask for near-field exposure and a near-field exposure method facilitating simultaneous exposure of aperture patterns in a plurality of process pitches as well as unmagnification exposure at 1:1.
      SOLUTION: The mask for near-field exposure is used to expose an object by using near-field light that is generated at an aperture of an exposure mask having a light shielding film having the aperture. The aperture of the exposure mask is configured to have at least a plurality of process pitches and aperture widths and the aperture has an aperture width satisfying (numerical expression 1), (numerical expression 2), (numerical expression 3) and (numerical expression 4) in the figure, wherein s (nm) represents an aperture width of the aperture, p (nm) represents a process pitch, E is a dimensionless parameter, and a and b are coefficients.
      COPYRIGHT: (C)2009,JPO&INPIT
    • 要解决的问题:提供用于近场曝光的掩模和近场曝光方法,以便于在多个处理间距中同时曝光孔径图案以及以1:1的非放大曝光。 解决方案:用于近场曝光的掩模用于通过使用在具有具有孔径的遮光膜的曝光掩模的孔径处产生的近场光来曝光物体。 曝光掩模的孔径被配置为具有至少多个处理间距和孔径宽度,并且孔径具有满足(数值表达式1),(数字表达式2),(数字表达式3)和(数字表达式4)的孔径宽度 ),其中s(nm)表示孔径的孔径宽度,p(nm)表示处理间距,E是无量纲参数,a和b是系数。 版权所有(C)2009,JPO&INPIT
    • 9. 发明专利
    • Surface measuring method and device
    • 表面测量方法和装置
    • JP2006317199A
    • 2006-11-24
    • JP2005137969
    • 2005-05-11
    • Canon Incキヤノン株式会社
    • TERAO AKIRA
    • G01B11/24G01B9/02
    • PROBLEM TO BE SOLVED: To precisely measure a surface shape of a measured object having a spherical face.
      SOLUTION: A calibration primary standard having a concentric circular pattern P comprising light shielding parts S1-S3 and reflecting parts R1-R3 is mounted on a stage 11 for mounting the measured object 5 having the spherical measured face 51, a focus regulation lens 6 is moved to bring a contrast into the maximum as to each of ring band domains D1-D3, and respective focus regulation amounts are stored in a computer 8. When measuring the measured face 51, the surface shape is measured in every of the stored focus regulation amounts, and only measured data in the corresponding ring domain are extracted to be combined.
      COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:精确测量具有球面的被测物体的表面形状。

      解决方案:具有包括遮光部分S1-S3和反射部分R1-R3的同心圆形图案P的校准主要标准件安装在平台11上,用于安装具有球形测量面51的测量对象5,聚焦调节 移动透镜6以使每个环带域D1-D3成为最大的对比度,并且将各个焦点调节量存储在计算机8中。当测量测量的面51时,在每个 存储焦点调节量,并且仅提取相应环域中的测量数据以进行组合。 版权所有(C)2007,JPO&INPIT

    • 10. 发明专利
    • Interferometer and method for measuring roughness
    • 用于测量粗糙度的干涉仪和方法
    • JP2006170776A
    • 2006-06-29
    • JP2004363031
    • 2004-12-15
    • Canon Incキヤノン株式会社
    • TERAO AKIRA
    • G01B11/30G01B9/02
    • PROBLEM TO BE SOLVED: To solve the problem that when restored full-shape data are separated by an FFT or the like at respective frequencies in order to evaluate a roughness shape being one of high-frequency shapes, an error is caused by shifting of positions where the high-frequency shapes of separated measurement data are interfaced.
      SOLUTION: A means is provided, which separates an object to be measured so as to overlap each other and carries out its measurement. The separated measurement data obtained by carrying out the separation and measurement, are divided into a low-frequency shape component and a high-frequency shape component, and an approximately interfacing process is carried out by using only data of the low-frequency shape component in the overlap region, and then an interfacing process is carried out by using only data of the high-frequency shape component in the overlap region, thereby restoring the full shape and precisely evaluating the roughness shape of the full shape.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题为了解决当通过FFT等以各频率对恢复的全形数据进行分离以评估作为高频形状之一的粗糙度形状的问题时,会引起误差 分离的测量数据的高频形状的位置的移位。 解决方案:提供一种将被测量物体彼此重叠并进行测量的装置。 通过进行分离和测量获得的分离的测量数据被分成低频形状分量和高频形状分量,并且通过仅使用低频形状分量的数据来执行近似接口处理 重叠区域,然后通过仅使用重叠区域中的高频形状分量的数据来执行接口处理,从而恢复完整形状并精确地评估整体形状的粗糙形状。 版权所有(C)2006,JPO&NCIPI