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1. 发明专利

JP2009253493A Ultrasonic sensor and ultrasonic sensor array, and ultrasonic detection device equipped therewith 审中-公开
标题翻译：超声波传感器和超声波传感器阵列，以及超声波检测装置
公开(公告)号：JP2009253493A
公开(公告)日：2009-10-29
申请号：JP2008096822
申请日：2008-04-03
申请人： Canon Inc , キヤノン株式会社
发明人： FURUSAWA KENTARO , MIZUTANI NATSUHIKO , CHO KENROKU
IPC分类号： H04R23/00 , A61B8/00 , G01N29/24 , G01S7/521
摘要： PROBLEM TO BE SOLVED: To provide an ultrasonic sensor and an ultrasonic sensor array simultaneously achieving higher sensitivity and wider band and facilitating formation of an array by ensuring both mechanical and optical sensitivities, and to provide an ultrasonic detection device with these sensor and sensor array.
SOLUTION: The ultrasonic sensor includes an ultrasonic receiving section disposed on a substrate and including a movable part displacing with ultrasonic waves and a resonator configured by disposing a first reflection film provided on the ultrasonic receiving section and a second reflection film held on the substrate in opposition via a non-solid medium. Ultrasonic-wave-induced displacement of the movable part is detected based on an optical response based on a change in relative distance between the first and second reflection films based on the displacement of the movable part.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供超声波传感器和超声波传感器阵列，同时实现更高的灵敏度和更宽的频带，并且通过确保机械和光学灵敏度来形成阵列，并且提供具有这些传感器和超声波检测装置的超声波检测装置传感器阵列解决方案：超声波传感器包括设置在基板上的超声波接收部分，并且包括具有超声波移动的可移动部分和通过设置设置在超声波接收部分上的第一反射膜和保持在第二反射膜上的第二反射膜构成的共振器底物通过非固体介质相反。基于可移动部件的位移，基于基于第一和第二反射膜之间的相对距离的变化的光学响应来检测可移动部件的超声波引起的位移。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2008112142A Near-field exposure mask, near-field exposure apparatus, and near-field exposure method 有权
标题翻译：近场曝光掩模，近场曝光装置和近场曝光方法
公开(公告)号：JP2008112142A
公开(公告)日：2008-05-15
申请号：JP2007208354
申请日：2007-08-09
申请人： Canon Inc , キヤノン株式会社
发明人： ITO TOSHIKI , YAMAGUCHI TAKAKO , MIZUTANI NATSUHIKO
IPC分类号： G03F1/00 , G03F1/60 , G03F7/20 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a near-field exposure mask capable of ensuring intimate contact between the mask and an object to be exposed in a large area by a simple mechanism even when waving is present in the object substrate to be exposed, and to provide a near-field exposure apparatus and a near-field exposure method. SOLUTION: The near-field exposure mask includes a light blocking film 102 having an opening 103 smaller than a wavelength of exposure light, and a mask base material 101 holding the light blocking film, and is configured and positioned to effect exposure of an object to be exposed to near-field light generated corresponding to the opening during contact thereof with the object to be exposed. The mask base material comprises a synthetic resin material transparent to the exposure light and having Young's modulus in a range from 1 GPa to 10 GPa. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种能够通过简单的机构确保掩模和大面积曝光的物体之间的紧密接触的近场曝光掩模，即使在待曝光的物体基板中存在波动时并且提供近场曝光装置和近场曝光方法。解决方案：近场曝光掩模包括具有小于曝光光的波长的开口103的遮光膜102和保持遮光膜的掩模基底材料101，并且被配置和定位成实现曝光暴露于与要暴露的物体接触的开口处产生的近场光的物体。掩模基材包括对曝光光透明并且杨氏模量在1GPa至10GPa范围内的合成树脂材料。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2007250932A Photomask for near-field exposure, and manufacturing method therefor 审中-公开
标题翻译：用于近场曝光的照相机及其制造方法
公开(公告)号：JP2007250932A
公开(公告)日：2007-09-27
申请号：JP2006073920
申请日：2006-03-17
申请人： Canon Inc , キヤノン株式会社
发明人： YAMAGUCHI TAKAKO , MIZUTANI NATSUHIKO
IPC分类号： H01L21/027 , G03F1/60 , G03F1/68 , G03F7/20
摘要： PROBLEM TO BE SOLVED: To provide a photomask for near-field exposure, having a membrane structure which is improved in durability with respect to deformation and can be increased in range of choices of materials for a mask base material, and to provide its manufacturing method.
SOLUTION: The photomask for near-field exposure has a base 104 and a membrane which is supported on the base and provided with a light-shielding film 101 having a fine aperture on one surface, and also constituted to be flexible and deformable. A mask base material constituting the membrane is formed by laminating layers 102 and 103, having internal stresses in mutually in reverse directions, alternately in two or more layers.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供近场曝光的光掩模，具有相对于变形提高耐久性的膜结构，并且可以增加用于掩模基材的材料的选择范围，并且提供其制造方法。解决方案：用于近场曝光的光掩模具有基底104和膜，该基底104和膜被支撑在基底上，并且在一个表面上设置有具有细孔的遮光膜101，并且还构成为柔性和变形。构成膜的掩模基材料通过以两层或多层交替层叠具有相互反向的内应力的层102和103而形成。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2005064117A Method, device, and mask for near-field exposure 有权
标题翻译：用于近场暴露的方法，装置和掩模
公开(公告)号：JP2005064117A
公开(公告)日：2005-03-10
申请号：JP2003290164
申请日：2003-08-08
申请人： Canon Inc , キヤノン株式会社
发明人： MIZUTANI NATSUHIKO
IPC分类号： G03F1/54 , G03F1/60 , G03F1/76 , G03F7/20 , H01L21/027 , G03F1/08
CPC分类号： G03F7/7035 , B82Y10/00 , G03F1/50 , G03F7/703 , G03F7/70325
摘要： PROBLEM TO BE SOLVED: To provide a near-field exposure method by which the adherence suitable for the near-field exposure is obtained by making a mask to follow the unevenness on the surface of an exposed substrate when the near-field exposure is executed by deforming an elastically deformable exposure mask to the exposed substrate, and also to provide a near-field exposure device and a near-field exposure mask.
SOLUTION: The exposure is executed by deforming the exposure mask to the exposed substrate as in an adhering state in the near-field exposure. It is so constituted that the pressure difference imparted between the surface and the rear face of the mask is made to be the pressure difference corresponding to the surface roughness of the exposed substrate in order to obtain the adherence suitable for the near-field exposure by making the exposure mask to follow the unevenness on the surface of the exposed substrate. The thickness of the exposure mask is constituted so as to be the proper thickness for obtaining the adherence suitable for the near-field exposure.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种近场曝光方法，通过该近场曝光方法，通过在近场曝光时使掩模遵循暴露的基板的表面上的凹凸来获得适合于近场曝光的粘附通过使可弹性变形的曝光掩模变形到暴露的基板来执行，并且还提供近场曝光装置和近场曝光掩模。解决方案：曝光是通过将曝光掩模变形为曝光的基板来实现的，如在近场曝光中的粘附状态。通过使掩模的表面和背面之间施加的压力差成为与曝光的基板的表面粗糙度相对应的压力差，以获得适合于近场曝光的粘附性曝光掩模遵循暴露的基底的表面上的不均匀性。曝光掩模的厚度构成为获得适合于近场曝光的粘附性的适当厚度。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2004335905A Photomask for near field light exposure, method for controlling intensity distribution of near field light using the photomask, and method and device for forming pattern 有权
公开(公告)号：JP2004335905A
公开(公告)日：2004-11-25
申请号：JP2003132517
申请日：2003-05-12
申请人： Canon Inc , キヤノン株式会社
发明人： MIZUTANI NATSUHIKO , INAO YASUHISA
IPC分类号： G03F1/00 , G03F1/68 , G03F7/20 , H01L21/027 , G03F1/16
CPC分类号： G03F7/7035 , B82Y10/00 , G03F1/36 , G03F1/50 , G03F7/2014 , G03F7/70325
摘要： PROBLEM TO BE SOLVED: To provide a photomask for near-field light exposure, a method for controlling the intensity distribution of near-field light using the photomask, and a method and a device for forming pattern capable of controlling the intensity distribution of near-field light to an arbitrary intensity distribution.
SOLUTION: A photomask for near-field light exposure for controlling the intensity distribution of near-field light is provided with a microaperture whose aperture width is less than 1/2 of an optical source wavelength of an exposure light. A recess or protrusion 104 is provided near the microaperture 103. The intensity distribution of near-field light can be controlled to an arbitrary intensity distribution by the recess or the protrusion.
COPYRIGHT: (C)2005,JPO&NCIPI

6. 发明专利

JP2004335569A Position detector and alignment device having position detector 有权
标题翻译：位置检测器和具有位置检测器的对准设备
公开(公告)号：JP2004335569A
公开(公告)日：2004-11-25
申请号：JP2003126185
申请日：2003-05-01
申请人： Canon Inc , キヤノン株式会社
发明人： YAMADA TOMOHIRO , MIZUTANI NATSUHIKO
IPC分类号： G01B11/00 , G01B11/14 , G03F1/42 , G03F7/20 , G03F9/00 , H01L21/027
CPC分类号： G03F9/7038 , G01B11/14 , G03F9/703 , G03F9/7088
摘要： PROBLEM TO BE SOLVED: To provide a position detector capable of detecting a position with high precision in the horizontal direction and the vertical direction without requiring a complex mechanism.
SOLUTION: The position detector has an interface structure of a negative dielectric and a dielectric. The interface structure detects plasmon strength for a microstructure in a plane including the interface structure or in the vicinity thereof, and detects positional relationship between the interface structure and the microstructure.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够在水平方向和垂直方向上以高精度检测位置的位置检测器，而不需要复杂的机构。
解决方案：位置检测器具有负电介质和电介质的界面结构。界面结构检测包含界面结构的平面或其附近的微结构的等离子体强度，并且检测界面结构和微观结构之间的位置关系。版权所有（C）2005，JPO＆NCIPI

7. 发明专利

JP2009025091A Sensor device 审中-公开
标题翻译：传感器设备
公开(公告)号：JP2009025091A
公开(公告)日：2009-02-05
申请号：JP2007187089
申请日：2007-07-18
申请人： Canon Inc , キヤノン株式会社
发明人： FURUSAWA KENTARO , MIZUTANI NATSUHIKO , KURODA AKIRA
IPC分类号： G01N21/27 , G01N21/41
CPC分类号： G01N21/553
摘要： PROBLEM TO BE SOLVED: To reduce the dependence of a resonance wavelength or sensitivity on an incident angle in a plasmon sensor device using a metal microperiod structure.
SOLUTION: Light is applied to a sensing head, which is constituted by fixing the metal microperiod structure 100 having slits formed thereto on a base 102 through an adhesive layer 101, from a light source 102 and the light reflected from the sensing head is detected by a photodetector 106. The width of each of the slits formed by the metal microperiod structure 100 is equal to or less than the size of the wavelength incident on the sensing head and the aspect ratio of each of the slits is 3 or above.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了减少谐振波长或灵敏度对使用金属微周期结构的等离子体激元传感器装置中的入射角的依赖性。解决方案：将光施加到感测头，该感测头通过将由其形成的狭缝的金属微周期结构100通过粘合剂层101固定在基底102上而由光源102和从感测头反射的光由金属微周期结构100形成的每个狭缝的宽度等于或小于入射到感测头上的波长的尺寸，并且每个狭缝的纵横比为3或更大。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2009002726A Light source, optical head, and sensing device 审中-公开
标题翻译：光源，光头和感应装置
公开(公告)号：JP2009002726A
公开(公告)日：2009-01-08
申请号：JP2007162270
申请日：2007-06-20
申请人： Canon Inc , キヤノン株式会社
发明人： YAMADA TOMOHIRO , MIZUTANI NATSUHIKO
IPC分类号： G01N21/27 , G01Q60/22 , G01Q80/00 , G11B7/135 , G11B9/12
摘要： PROBLEM TO BE SOLVED: To provide a light source or the like capable of generating near-field light efficiently.
SOLUTION: The shape of a fine opening 103 has a side having a half-integer-fold or integer-fold length, or an approximately equal length to the wavelength of surface plasmon polariton excited by irradiation of a member 101 with incident light 106. Optionally, the shape of the fine opening 103 has a side having a shorter length than a half-integer-fold or integer-fold length of the wavelength as long as a value determined beforehand, or an approximately equal length thereto.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供能够有效地产生近场光的光源等。解决方案：微细开口103的形状具有一半具有半整数倍或整数倍的长度，或者与通过入射光照射的部件101激发的表面等离子体激元的波长的长度近似相等可选地，精细开口103的形状具有比预先确定的值或其近似相等的长度具有比波长的半整数倍或整数倍长度更短的长度的一侧。版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2008098263A Near-field exposure mask, and method for forming resist pattern using the same 审中-公开
标题翻译：近场曝光掩模，以及使用其形成耐蚀图案的方法
公开(公告)号：JP2008098263A
公开(公告)日：2008-04-24
申请号：JP2006276052
申请日：2006-10-10
申请人： Canon Inc , キヤノン株式会社
发明人： ITO TOSHIKI , MIZUTANI NATSUHIKO , TERAO AKIRA
IPC分类号： H01L21/027 , G03F1/52 , G03F1/54 , G03F7/038 , G03F7/039
CPC分类号： G03F7/2014 , B82Y10/00 , G03F1/50 , G03F7/70325
摘要： PROBLEM TO BE SOLVED: To provide a near-field exposure mask capable of restraining heating during exposure, and restraining a resist pattern from varying in size for each shot, and to provide a method of forming a resist pattern using the same.
SOLUTION: The near-field exposure mask is equipped with a transparent mask base material 101, a shading layer 103, which contains silicon and is located on the transparent mask mother material, a reflecting layer 102 which is provided between the transparent mask mother material and the shading layer, and an opening pattern, which is smaller than the wavelength λ(nm) of exposure light and provided to both the reflecting layer 102 and shading layer 103. The near-field exposure mask is configured in such a manner that the reflection factor of an interface between the transparent mask mother material 101 and the reflecting layer is higher than that of an interface between the transparent mask mother material and shading layer of the near-field exposure mask that does not comprise the reflecting layer between the shading layer containing silicon on the transparent mask mother material and the transparent mask mother material.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够在曝光期间抑制加热的近场曝光掩模，并且抑制每个镜头的抗蚀剂图案的尺寸变化，并且提供使用其形成抗蚀剂图案的方法。解决方案：近场曝光掩模配备有透明掩模基材101，包含硅并位于透明掩模母材上的遮光层103，设置在透明掩模之间的反射层102 母材和遮光层，以及比曝光光的波长λ（nm）小并提供给反射层102和遮光层103的开口图案。近场曝光掩模以这种方式配置透明掩模母材101与反射层之间的界面的反射系数高于不包括反射层的近场曝光掩模的透明掩模母材和遮光层之间的界面的反射系数在透明掩模母材上含有硅的遮光层和透明掩模母材。版权所有（C）2008，JPO＆INPIT

10. 发明专利

JP2008015168A Method for manufacturing near field exposure mask, near field exposure method and near field exposure device 审中-公开
标题翻译：制造近场曝露掩模的方法，近场曝光方法和近场曝光装置
公开(公告)号：JP2008015168A
公开(公告)日：2008-01-24
申请号：JP2006185699
申请日：2006-07-05
申请人： Canon Inc , キヤノン株式会社
发明人： INAO YASUHISA , ITO TOSHIKI , YAMAGUCHI TAKAKO , MIZUTANI NATSUHIKO
IPC分类号： G03F1/54 , H01L21/027
CPC分类号： G03F7/2014 , G03F1/50
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a near field exposure mask by which distortion on a mask surface can be suppressed and a flat mask can be formed in manufacturing a near field exposure mask using a rubber elastic material, and to provide a near field exposure method and a near field exposure device.
SOLUTION: The method for manufacturing a near field exposure mask includes: a step of preparing a first substrate; a release layer forming step of forming a release layer on the first substrate; a light shielding layer forming step of forming a light shielding layer that blocks illumination light on the release layer; an aperture forming step of forming an aperture opening having a width shorter than the wavelength of the illumination light on the light shielding layer; a mask base forming step of forming a mask base material made of a rubber elastic material that is transparent to the illumination light, on the light shielding layer where the aperture is formed; a second substrate joining step of joining a second substrate that is transparent to the illumination light on the mask base material; and a first substrate peeling step of peeling the first substrate from the light shielding layer via the peeling layer.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种制造近场曝光掩模的方法，通过该方法可以抑制掩模表面上的变形并且可以在使用橡胶弹性材料制造近场曝光掩模时形成平面掩模，以及以提供近场曝光方法和近场曝光装置。解决方案：近场曝光掩模的制造方法包括：制备第一衬底的步骤; 释放层形成步骤，在所述第一基板上形成剥离层; 遮光层形成步骤，形成遮光层，遮光层阻挡在剥离层上的照明光; 开口形成步骤，形成具有比遮光层上的照明光的波长短的宽度的开口; 掩模基底形成步骤，在形成有孔的遮光层上形成由对照明光透明的橡胶弹性材料制成的掩模基材; 第二基板接合步骤，将对所述照明光透明的第二基板接合在所述掩模基材上; 以及经由剥离层从遮光层剥离第一基板的第一基板剥离工序。版权所有（C）2008，JPO＆INPIT

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