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1. 发明专利

JP2011249557A Vertical cavity surface emitting laser, image forming apparatus using the same 有权
标题翻译：垂直孔表面发射激光器，使用其的图像形成装置
公开(公告)号：JP2011249557A
公开(公告)日：2011-12-08
申请号：JP2010121228
申请日：2010-05-27
申请人： Canon Inc , キヤノン株式会社
发明人： INAO YASUHISA , IKUTA MITSUHIRO , TAKEUCHI TETSUYA
IPC分类号： H01S5/183 , B41J2/44
CPC分类号： H01S5/187 , B82Y20/00 , G03G15/04 , G03G15/04072 , G03G15/326 , H01S5/18311 , H01S5/18358 , H01S5/3022 , H01S5/34326 , H01S5/3436 , H01S5/423
摘要： PROBLEM TO BE SOLVED: To provide a vertical cavity surface emitting laser which can prevent delamination at the interface of a selective oxidation layer and a spacer layer while suppressing the voltage rise, and can enhance reliability.SOLUTION: In a vertical cavity surface emitting laser, an n-type semiconductor Bragg reflector, a p-type semiconductor Bragg reflector, and an active layer interposed therebetween are laminated on a substrate, the p-type semiconductor Bragg reflector is provided on the active layer with a p-type spacer layer and a selective oxidation layer interposed therebetween, and a current constriction structure is formed by oxidizing the selective oxidation layer. A first intermediate layer provided contiguously to the selective oxidation layer and composed of a material that does not promote oxidation when the selective oxidation layer is oxidized, and a second intermediate layer provided contiguously to the first intermediate layer and a third intermediate layer provided contiguously to the second intermediate layer in order to adjust a band gap to the p-type spacer layer are interposed between the selective oxidation layer and the p-type spacer layer.
摘要翻译：要解决的问题：提供一种能够在抑制电压升高的同时防止选择性氧化层和间隔层的界面分层的垂直腔面发射激光器，并且可以提高可靠性。解决方案：在垂直腔表面发射激光器中，在衬底上层叠n型半导体布拉格反射器，p型半导体布拉格反射器和夹在其间的有源层，提供p型半导体布拉格反射器在具有p型间隔层的有源层和介于其间的选择性氧化层，并且通过氧化选择性氧化层形成电流收缩结构。第一中间层与选择性氧化层连续地设置，并且在选择氧化层被氧化时由不会促进氧化的材料构成，第二中间层与第一中间层连续地设置，第三中间层邻接于为了调整与p型隔离层的带隙的第二中间层插入在选择性氧化层和p型隔离层之间。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2008015168A Method for manufacturing near field exposure mask, near field exposure method and near field exposure device 审中-公开
标题翻译：制造近场曝露掩模的方法，近场曝光方法和近场曝光装置
公开(公告)号：JP2008015168A
公开(公告)日：2008-01-24
申请号：JP2006185699
申请日：2006-07-05
申请人： Canon Inc , キヤノン株式会社
发明人： INAO YASUHISA , ITO TOSHIKI , YAMAGUCHI TAKAKO , MIZUTANI NATSUHIKO
IPC分类号： G03F1/54 , H01L21/027
CPC分类号： G03F7/2014 , G03F1/50
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a near field exposure mask by which distortion on a mask surface can be suppressed and a flat mask can be formed in manufacturing a near field exposure mask using a rubber elastic material, and to provide a near field exposure method and a near field exposure device.
SOLUTION: The method for manufacturing a near field exposure mask includes: a step of preparing a first substrate; a release layer forming step of forming a release layer on the first substrate; a light shielding layer forming step of forming a light shielding layer that blocks illumination light on the release layer; an aperture forming step of forming an aperture opening having a width shorter than the wavelength of the illumination light on the light shielding layer; a mask base forming step of forming a mask base material made of a rubber elastic material that is transparent to the illumination light, on the light shielding layer where the aperture is formed; a second substrate joining step of joining a second substrate that is transparent to the illumination light on the mask base material; and a first substrate peeling step of peeling the first substrate from the light shielding layer via the peeling layer.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种制造近场曝光掩模的方法，通过该方法可以抑制掩模表面上的变形并且可以在使用橡胶弹性材料制造近场曝光掩模时形成平面掩模，以及以提供近场曝光方法和近场曝光装置。解决方案：近场曝光掩模的制造方法包括：制备第一衬底的步骤; 释放层形成步骤，在所述第一基板上形成剥离层; 遮光层形成步骤，形成遮光层，遮光层阻挡在剥离层上的照明光; 开口形成步骤，形成具有比遮光层上的照明光的波长短的宽度的开口; 掩模基底形成步骤，在形成有孔的遮光层上形成由对照明光透明的橡胶弹性材料制成的掩模基材; 第二基板接合步骤，将对所述照明光透明的第二基板接合在所述掩模基材上; 以及经由剥离层从遮光层剥离第一基板的第一基板剥离工序。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2006100815A Organic film, manufacturing method thereof, and field effect transistor using the organic film 审中-公开
标题翻译：有机薄膜及其制造方法及使用有机薄膜的场效应晶体管
公开(公告)号：JP2006100815A
公开(公告)日：2006-04-13
申请号：JP2005252453
申请日：2005-08-31
申请人： Canon Inc , キヤノン株式会社
发明人： NAKAGAWA TAIRA , NAKAMURA SHINICHI , INAO YASUHISA
IPC分类号： H01L51/05 , H01L21/368 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide an organic film having high flatness, and a field effect transistor using the organic film.
SOLUTION: A field effect transistor employs an organic film 5 which is provided on an insulating layer 4b having multiple insulating regions 4a with different surface energy densities and is oriented. It is preferable that each of the multiple insulating regions with different surface energy densities has a difference in surface energy density of 10 dyne/cm or more, and a difference in height of 0.5 nm or more and 100 nm or less. A compound constituting the organic film may be electrically conductive, polymeric, and liquid crystalline.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供具有高平坦度的有机膜和使用有机膜的场效应晶体管。解决方案：场效应晶体管采用有机膜5，其设置在具有不同表面能密度的多个绝缘区域4a的绝缘层4b上并且被定向。优选地，具有不同表面能密度的多个绝缘区域中的每一个具有10达因/厘米或更大的表面能密度和0.5nm以上且100nm以下的高度差。构成有机膜的化合物可以是导电的，聚合的和液晶的。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2006019445A Photomask and near-field exposure method 有权
标题翻译：光电和近场曝光方法
公开(公告)号：JP2006019445A
公开(公告)日：2006-01-19
申请号：JP2004194819
申请日：2004-06-30
申请人： Canon Inc , キヤノン株式会社
发明人： MIZUTANI NATSUHIKO , INAO YASUHISA
IPC分类号： H01L21/027 , G03F1/36 , G03F1/68 , G03F7/20
CPC分类号： G03F7/7035 , B82Y10/00 , G03F1/36 , G03F1/50 , G03F7/70325
摘要： PROBLEM TO BE SOLVED: To equate the intensity distribution of near-field light in each slit in a photomask used for near-field exposure.
SOLUTION: Exposure is made by exposure light having a wavelength of 436nm by using the photomask. Five slits (s) are formed mutually in parallel in a light-shielding film 102 in the photomask. The opening length of each slit (s) is 2,000nm, and the pitch (p) (distance between centers) between respective slits S is 100nm. The opening width of three inner slits S is set to 40nm, and that of two outer slits S is set to 50nm. As a result, when exposure is made by exposure light having a wavelength of 436nm, the intensity distribution of near-field light in each slit (s) can be made equal.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：将用于近场曝光的光掩模中的每个狭缝中的近场光的强度分布相等。
解决方案：使用光掩模对波长为436nm的曝光进行曝光。五个狭缝在光掩模中的遮光膜102中相互平行地形成。每个狭缝的开口长度为2,000nm，各狭缝S之间的间距（p）（中心之间的距离）为100nm。三个内部狭缝S的开口宽度设定为40nm，两个外部狭缝S的开口宽度设定为50nm。结果，当通过具有波长为436nm的曝光光进行曝光时，可以使每个狭缝中的近场光的强度分布相等。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2004111500A Mask, exposure device and its method 审中-公开
公开(公告)号：JP2004111500A
公开(公告)日：2004-04-08
申请号：JP2002269497
申请日：2002-09-17
申请人： Canon Inc , キヤノン株式会社
发明人： INAO YASUHISA , KURODA AKIRA
IPC分类号： B82B3/00 , B82Y10/00 , B82Y40/00 , G03F1/42 , G03F1/70 , G03F1/76 , G03F7/20 , H01L21/027 , G03F1/08
CPC分类号： G03F7/7035 , B82Y10/00 , G03F7/70325 , G03F7/70566
摘要： PROBLEM TO BE SOLVED: To provide a mask for near-field light, an exposure device and a method capable of attaining exposure of high resolution, high throughput and high economical efficiency. SOLUTION: The exposure method comprises a step for sticking the mask on which apertures respectively having longitudinal directions which intersect with each other at right angles are formed close to a body to be processed and a step for irradiating the mask with exposure light polarized in a direction other than respective longitudinal directions. COPYRIGHT: (C)2004,JPO

6. 发明专利

JP2004103702A Near field mask exposure method and near field mask exposure device 有权
公开(公告)号：JP2004103702A
公开(公告)日：2004-04-02
申请号：JP2002261293
申请日：2002-09-06
申请人： Canon Inc , キヤノン株式会社
发明人： INAO YASUHISA , KURODA AKIRA , MIZUTANI NATSUHIKO
IPC分类号： B82B3/00 , B82Y10/00 , B82Y40/00 , G03F1/14 , G03F7/20 , H01L21/027
CPC分类号： G03F7/7035 , B82Y10/00 , G03F1/50 , G03F7/2014 , G03F7/70325 , G03F7/70566
摘要： PROBLEM TO BE SOLVED: To solve the problem in near field mask exposure that the aspect ratio of a pattern being formed on a resist lowers when the opening width of a mask is set smaller than one third the exposure wavelength.
SOLUTION: In the near field mask exposure method for exposing a workpiece with near field light leaking from the opening of a mask, the mask surface is irradiated with unpolarized light having a field strength uniform over all directions in a plane parallel with the mask surface and, using a mask provided with a plurality of rectangular openings having a short side narrower than one third of the wavelength of exposure light and a long side directing two or more directions in that plane, only a polarized light component in the light impinging on the mask surface having an electric field directing the short side direction of the rectangular opening is leaked as near field light from the opening thus exposing the opening pattern.
COPYRIGHT: (C)2004,JPO

7. 发明专利

JP2013157473A Surface emitting laser 审中-公开
标题翻译：表面发射激光
公开(公告)号：JP2013157473A
公开(公告)日：2013-08-15
申请号：JP2012017092
申请日：2012-01-30
申请人： Canon Inc , キヤノン株式会社
发明人： UCHIDA TATSURO , INAO YASUHISA
IPC分类号： H01S5/183
CPC分类号： H01S5/18 , B82Y20/00 , G03G15/04072 , H01S5/18311 , H01S5/18338 , H01S5/18391 , H01S5/209 , H01S5/3202 , H01S5/34326 , H01S2301/166
摘要： PROBLEM TO BE SOLVED: To provide a mesa-structure surface emitting laser having a current constriction structure, which inhibits increase in value of oscillation threshold current even when an off substrate and a surface relief structure are used.SOLUTION: A surface emitting laser having a mesa structure comprises: an off substrate; a lower reflection mirror; an active layer; a current constriction structure; an upper reflection mirror; and a surface relief structure. A central axis of a high reflectance region of the surface relief structure and a central axis of the mesa structure are not coincident with each other and a value of oscillation threshold current is lower than when the central axis of the high reflectance region of the surface relief structure and the central axis of the mesa structure are coincident with each other.
摘要翻译：要解决的问题：提供一种具有电流收缩结构的台面结构表面发射激光器，其即使在使用截止基板和表面浮雕结构时也抑制了振荡阈值电流的增加。解决方案：具有台面结构包括：离开基板; 下反射镜; 活性层目前的收缩结构; 上反射镜; 和表面浮雕结构。表面浮雕结构的高反射率区域和台面结构的中心轴的中心轴线彼此不一致，并且振荡阈值电流的值低于表面浮雕的高反射率区域的中心轴线结构和台面结构的中心轴彼此重合。

8. 发明专利

JP2012104522A Surface emitting laser and surface emitting laser array, method for manufacturing surface emitting laser and surface emitting laser array, and optical apparatus including surface emitting laser array 有权
标题翻译：表面发射激光和表面发射激光阵列，用于制造表面发射激光和表面发射激光阵列的方法，以及包括表面发射激光阵列的光学装置
公开(公告)号：JP2012104522A
公开(公告)日：2012-05-31
申请号：JP2010249129
申请日：2010-11-05
申请人： Canon Inc , キヤノン株式会社
发明人： INAO YASUHISA , UCHIDA TATSURO , UCHIDA TAKESHI
IPC分类号： H01S5/187
CPC分类号： H01S5/18391 , H01S5/18313 , H01S2301/166 , H01S2301/176
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a surface emitting laser capable of suppressing variations of characteristics for every surfaces and wafers, and oscillating in single fundamental transverse mode.SOLUTION: The method for manufacturing a surface light emitting laser comprises a step for exposing a bottom surface of a surface relief structure by etching a second semiconductor layer using a first semiconductor layer in which the surface relief structure pattern is formed as an etching mask and using a third semiconductor layer as an etching stop, after a selective oxidation step; a step for exposing an upper surface of the surface relief structure by etching the first semiconductor layer in which the surface relief structure pattern is formed using the second semiconductor layer and the third semiconductor layer as etching stops; and a contact part protection step for protecting a first semiconductor layer region acting as the contact part and arranged at an outer peripheral side of the bottom surface of the surface relief structure which is the opposite side to the upper surface of the surface relief structure.
摘要翻译：要解决的问题：提供一种能够抑制每个表面和晶片的特性变化并且以单个基本横向振荡的表面发射激光器的制造方法。解决方案：制造面发光激光器的方法包括通过使用形成表面浮雕结构图案作为蚀刻的第一半导体层蚀刻第二半导体层来暴露表面起伏结构的底表面的步骤在选择性氧化步骤之后，使用第三半导体层作为蚀刻停止层; 通过蚀刻使用第二半导体层和第三半导体层蚀刻形成表面浮雕结构图案的第一半导体层来暴露表面浮雕结构的上表面的步骤停止; 以及接触部分保护步骤，用于保护用作接触部分的第一半导体层区域并且布置在与表面浮雕结构的上表面相对的表面浮雕结构的底表面的外周侧。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2010040600A Manufacturing method of surface-emitting laser, manufacturing method of surface-emitting laser array, surface-emitting laser and surface-emitting laser array, and optical equipment comprising surface-emitting laser array 有权
标题翻译：表面发射激光的制造方法，表面发射激光阵列，表面发射激光和表面发射激光阵列的制造方法以及包含表面发射激光阵列的光学设备
公开(公告)号：JP2010040600A
公开(公告)日：2010-02-18
申请号：JP2008198951
申请日：2008-07-31
申请人： Canon Inc , キヤノン株式会社
发明人： IKUTA MITSUHIRO , INAO YASUHISA , YAMAGUCHI TAKAKO
IPC分类号： H01S5/183
CPC分类号： H01S5/18391 , H01S5/18311 , H01S5/18347 , H01S2301/166 , H01S2301/176
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a surface-emitting laser, reducing process damage applied on a surface relief structure to obtain a stable single lateral mode characteristic. SOLUTION: The surface-emitting laser has a surface relief structure of step construction for controlling a reflection index at the light-emitting part of an upper mirror. The manufacturing method thereof includes: a step in which a resist pattern comprising the pattern for forming a mesa structure and the pattern for forming a step construction is formed on or above the upper mirror, and a surface layer of the upper mirror is etched as a first etching for determining a horizontal position of the step structure; a step of forming a current constriction structure after the step of first etching; and a step in which, after the step of forming the current constriction structure, a place subjected to first etching is further etched, as a second etching for determining a depth position of the step construction. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供表面发射激光器的制造方法，减少施加在表面浮雕结构上的工艺损伤，以获得稳定的单一横向模式特性。解决方案：表面发射激光器具有用于控制上反射镜的发光部分的反射指数的台阶结构的表面浮雕结构。其制造方法包括：在上反射镜上或上方形成包括形成台面结构的图案的抗蚀剂图案和用于形成台阶结构的图案的步骤，并且将上镜的表面层蚀刻为用于确定台阶结构的水平位置的第一蚀刻; 在第一蚀刻步骤之后形成电流收缩结构的步骤; 以及在形成电流收缩结构的步骤之后进一步蚀刻经受第一蚀刻的位置作为用于确定台阶结构的深度位置的第二蚀刻的步骤。版权所有（C）2010，JPO＆INPIT

10. 发明专利

JP2008070622A Exposure mask and method for manufacturing the same 审中-公开
标题翻译：曝光掩模及其制造方法
公开(公告)号：JP2008070622A
公开(公告)日：2008-03-27
申请号：JP2006249433
申请日：2006-09-14
申请人： Canon Inc , キヤノン株式会社
发明人： YASUI NOBUHIRO , ITO TOSHIKI , INAO YASUHISA , DEN TORU
IPC分类号： G03F1/38 , G03F1/68 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide an exposure mask having high perpendicularity of a side wall by imparting a porous structure having a reinforcing effect to an opening portion in a light shielding layer, and capable of reducing loss of light due to reflection, and to provide a method for manufacturing the mask.
SOLUTION: The exposure mask comprises a substrate 100 having a transmitting property for exposure light and a light shielding layer 101 disposed in contact on the substrate and having a light shielding region 102 and a transmissive region 103, wherein the transmissive region 103 comprises a porous structure having a plurality of pores 104 perpendicular to the substrate 100.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了通过赋予遮光层中的开口部分具有增强作用的多孔结构并且能够减少由于反射引起的光的损失而提供具有高侧垂直度的曝光掩模，并提供一种制造掩模的方法。解决方案：曝光掩模包括具有曝光光的透射特性的基板100和与基板接触设置并具有遮光区域102和透射区域103的遮光层101，其中透射区域103包括多孔结构具有垂直于衬底100的多个孔104.权利要求（C）2008，JPO＆INPIT

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