专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2013098188A Vacuum processing apparatus 审中-公开
标题翻译：真空加工设备
公开(公告)号：JP2013098188A
公开(公告)日：2013-05-20
申请号：JP2011236596
申请日：2011-10-28
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： KAJIWARA YUJI , HIRAYANAGI HIROHISA , ATSUMI MASAHIRO , YOSHIBAYASHI KAZUTOSHI , HIRAMATSU SHOGO , YAMANAKA KAZUTO , SAHASE HAJIME , UEDA TAKASHI , SATO KENJI
IPC分类号： H01L21/677 , C23C16/44
摘要： PROBLEM TO BE SOLVED: To provide a vacuum processing apparatus capable of improving deposition process productivity and contributing to reduce carrier management cost such as reducing the number of carrier cleaning.SOLUTION: The vacuum processing apparatus comprises: a carrier 7 which is conveyed between a load lock chamber LL and a process chamber PC; and a hook 19 which receives a substrate 5 from the carrier 7 conveyed into the process chamber PC. A vacuum processing for the substrate 5 is carried out after the carrier 7 is retracted in the load lock chamber.
摘要翻译：要解决的问题：提供一种能够提高沉积工艺生产率并有助于降低载体管理成本的真空处理装置，例如减少载体清洁的数量。解决方案：真空处理设备包括：载体7，其在负载锁定室LL和处理室PC之间传送; 以及从运送到处理室PC中的托架7接收基板5的钩19。在载体7在装载锁定室中缩回之后，进行基板5的真空处理。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2012099181A Device for manufacturing magnetic recording medium 有权
标题翻译：制造磁记录介质的装置
公开(公告)号：JP2012099181A
公开(公告)日：2012-05-24
申请号：JP2010246386
申请日：2010-11-02
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： YAMANAKA KAZUTO , HIRAMATSU SHOGO
IPC分类号： G11B5/84 , G11B5/738
CPC分类号： G11B5/855
摘要： PROBLEM TO BE SOLVED: To prevent a deterioration in an etching rate due to the adhesion of a film to be etched around a substrate holder.SOLUTION: This device for manufacturing a magnetic recording medium by performing respective processing on a substrate mounted on the substrate holder has a holder film forming chamber for forming a first film on the substrate holder with no substrate mounted, a substrate mounting chamber for mounting a substrate on the substrate holder with the first film formed, and a processing chamber for performing dry etching processing on a substrate with a resist layer of a prescribed pattern formed on a multilayer film including a magnetic film layer to process the magnetic film layer into a shape based on the prescribed pattern. The first film is a film that is more difficult to be etched than a film in the multilayer film removed by the dry etching processing, and the processing chamber, the holder film forming chamber and the substrate mounting chamber are connected such that the substrate holder can be carried under more decompressed condition than the atmosphere.
摘要翻译：要解决的问题：为了防止由于待蚀刻的膜周围的衬底保持器的粘附而引起的蚀刻速率的劣化。解决方案：用于通过在安装在基板保持器上的基板上进行各种处理来制造磁记录介质的装置具有用于在不安装基板的基板保持器上形成第一膜的保持器膜形成室，用于在形成有第一膜的基板保持器上安装基板，以及处理室，用于在具有规定图案的抗蚀剂层的基板上进行干蚀刻处理，所述处理室形成在包括磁性膜层的多层膜上，以将该磁性膜层加工成基于规定图案的形状。第一膜是通过干蚀刻处理除去的多层膜中的膜比难以蚀刻的膜，并且处理室，保持膜形成室和基板安装室被连接，使得基板保持器在比大气更减压的条件下运载。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2010102815A Substrate processing apparatus and magnetic recording medium manufacturing method 审中-公开
标题翻译：基板加工设备和磁记录介质制造方法
公开(公告)号：JP2010102815A
公开(公告)日：2010-05-06
申请号：JP2009162472
申请日：2009-07-09
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： YAMANAKA KAZUTO , SHIBAMOTO MASAHIRO , MIYOSHI AYUMI , HITOMI SATOSHI , DAVID JAYAPURAWIRA
IPC分类号： G11B5/84 , G11B5/855
CPC分类号： G11B5/8404 , H01J27/024 , H01J37/04 , H01J37/09 , H01J37/3053 , H01J37/32422 , H01J2237/022 , H01J2237/0453 , H01J2237/0822 , H01J2237/0825
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus, capable of suppressing mutual contamination and/or damages to the insides of ion beam generators arranged opposite each other via a substrate, and to provide a manufacturing method for a magnetic recording medium.
SOLUTION: A substrate processing apparatus 100 includes: a first ion beam generator 1a that applies an ion beam to one surface to be processed of a substrate W; a second ion beam generator 1b, that applies an ion beam to another surface to be processed which are arranged opposite each other via the substrate W; an area of a first grid 10a in the first ion beam generator 1a; and an area of a second grid 10b in the second ion beam generator 1b corresponding to an opening of the substrate W are occluded.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种基板处理装置，其能够抑制经由基板彼此相对布置的离子束发生器的内部的相互污染和/或损坏，并且提供用于磁记录介质的制造方法。解决方案：基板处理装置100包括：第一离子束发生器1a，其将离子束施加到待加工的基板W的一个表面; 第二离子束发生器1b，其经由衬底W将离子束施加到彼此相对布置的另一待处理表面; 第一离子束发生器1a中的第一栅极10a的区域; 第二离子束发生器1b中对应于衬底W的开口的第二栅极10b的区域被封闭。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2014122376A Plasma cvd apparatus, and vacuum processing apparatus 有权
标题翻译：等离子体CVD装置和真空加工装置
公开(公告)号：JP2014122376A
公开(公告)日：2014-07-03
申请号：JP2012278183
申请日：2012-12-20
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： YAKUSHIGAMI HIROSHI , SHIBAMOTO MASAHIRO , YAMANAKA KAZUTO , HIRAMATSU SHOGO , KANO SHIN
IPC分类号： C23C16/44 , C23C16/27
CPC分类号： C23C14/568 , C23C16/26 , C23C16/4401 , C23C16/509 , G11B5/85
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus which prevents generation of particles in a protection film forming chamber without providing an oxygen cleaning process for eliminating a DLC (Diamond Like Carbon) film deposited in the protection film forming chamber.SOLUTION: A protection film forming chamber 128 where a protection film consisting of carbon is made on a magnetic film includes: a gas introduction part 82 introducing raw material gas into a vacuum chamber; a discharge electrode 831 having a discharge surface provided in a position facing a substrate 1 transported to a predetermined position in the vacuum chamber; a plasma formation part applying voltage between the substrate 1 transported to the predetermined position and the discharge surface; a permanent magnet 835 provided on a rear surface of the discharge surface, including a first magnet of which a pole of one polarity is directed to the surface, and a second magnet of which a pole of the reverse polarity with respect to the first magnet is directed to the discharge surface; and a non-erosion part mask 838 which is provided parallel to the surface of the discharge electrode 831, and covers and surrounds a region facing the permanent magnet 835 out of the surface of the discharge electrode 831.
摘要翻译：要解决的问题：提供一种防止在保护膜形成室中产生颗粒的等离子体处理装置，而不提供用于消除沉积在保护膜形成室中的DLC（类金刚石）膜的氧气清洁工艺。解决方案：保护在磁性膜上形成由碳构成的保护膜的成膜室128包括：将原料气体导入真空室的气体导入部82; 放电电极831，具有设置在面向被输送到真空室中的预定位置的基板1的位置的放电表面; 等离子体形成部分，其在传送到所述预定位置的所述基板1和所述排出表面之间施加电压; 设置在排出表面的后表面上的永磁体835，包括一个极性的极引导到表面的第一磁体和相对于第一磁体的相反极性的极的第二磁体是指向排放表面; 以及平行于放电电极831的表面设置的非侵蚀部掩模838，并且覆盖并包围在放电电极831的表面之外的永久磁铁835的区域。

5. 发明专利

JP2009191356A Sputtering apparatus and sputtering method 审中-公开
标题翻译：溅射装置和喷射方法
公开(公告)号：JP2009191356A
公开(公告)日：2009-08-27
申请号：JP2008194733
申请日：2008-07-29
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： SHIBAMOTO MASAHIRO , YAMANAKA KAZUTO
IPC分类号： C23C14/34 , C23C16/455 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To provide a gas introduction path for improving the uniformity of a process gas.
SOLUTION: A sputtering apparatus has a substrate-holding means for holding a substrate, a gas introduction path which has a plurality of gas exhaust nozzles arranged in a shape of a closed curve at a plurality of positions surrounding the circumference of the substrate, and gas-introduction connection ports provided in at least two positions of approximately opposing to each other on the closed curve. Such two gas introduction paths are provided on the front surface side and the rear surface side of the substrate so as to be symmetrical with respect to the substrate.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供用于提高处理气体的均匀性的气体引入路径。解决方案：溅射装置具有用于保持基板的基板保持装置，气体引入路径，其具有在围绕基板的周边的多个位置处以闭合曲线的形状布置的多个排气喷嘴和气体导入连接口，其设置在闭合曲线上彼此大致相对的至少两个位置。这样的两个气体导入路径设置在基板的表面侧和背面侧，以相对于基板对称。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2010059473A Substrate processing apparatus and thin film deposition apparatus 审中-公开
标题翻译：基板加工装置和薄膜沉积装置
公开(公告)号：JP2010059473A
公开(公告)日：2010-03-18
申请号：JP2008226033
申请日：2008-09-03
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： SATO AKIO , SHIBAMOTO MASAHIRO , YAMANAKA KAZUTO , DJAYAPRAWIRA DAVID
IPC分类号： C23C14/32 , H01L21/027 , H01L21/302
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus and a thin film deposition apparatus which are stably used for a long period of time, and have reduced manufacturing cost.
SOLUTION: The substrate processing apparatus includes a conductive substrate holder 20 for holding a substrate 9, an ion beam source for irradiating the substrate 9 with ion beams, a grounding part 13 for connecting the substrate holder 20 to the ground, and a driving part 18 for bringing the grounding part 13 into contact with or not into contact with the substrate holder 20. The substrate holder 20 is grounded by bringing the grounding part 13 into contact with the substrate holder 20 during the etching or immediately before the etching performed by irradiating the substrate 9 with ion beams from the ion beam source.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供长时间稳定使用并降低制造成本的基板处理装置和薄膜沉积装置。解决方案：基板处理装置包括用于保持基板9的导电基板保持器20，用于用离子束照射基板9的离子束源，用于将基板保持器20连接到地面的接地部13，以及驱动部分18，用于使接地部分13与基板保持器20接触或不接触。基板保持器20通过在蚀刻期间或在蚀刻之前或之后使接地部分13与基板保持器20接触而接地通过用离子束源的离子束照射基板9。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2012255207A Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：JP2012255207A
公开(公告)日：2012-12-27
申请号：JP2012110585
申请日：2012-05-14
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： YAMANAKA KAZUTO , HIRAMATSU SHOGO
IPC分类号： C23C16/44 , C23C14/56 , H01L21/677
摘要： PROBLEM TO BE SOLVED: To provide a vacuum processing apparatus which can improve the throughput of deposition processing, and can perform a plurality of kinds of processing at the same time.SOLUTION: The vacuum processing apparatus 1 transports a material S to be processed along a transfer route R in a condition that the material is held on a carrier 3, and performs prescribed vacuum processing in a plurality of process chambers disposed along the transfer route R, wherein the material S to be processed held on the carrier 3 is replaced in a plurality of turnabout chambers disposed in each corner part on the transfer route R.
摘要翻译：要解决的问题：提供一种可以提高沉积处理的生产能力的真空处理装置，并且可以同时执行多种处理。解决方案：真空处理装置1在材料被保持在载体3上的条件下沿着传送路径R传送要处理的材料S，并且在沿传送设置的多个处理室中进行规定的真空处理路线R，其中被保持在载体3上的待处理材料S被更换为设置在传送路径R上的每个拐角部分中的多个转动室。（C）2013，JPO和INPIT

8. 发明专利

JP2010102814A Substrate processing apparatus and magnetic recording medium manufacturing method 有权
标题翻译：基板加工设备和磁记录介质制造方法
公开(公告)号：JP2010102814A
公开(公告)日：2010-05-06
申请号：JP2009162467
申请日：2009-07-09
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： YAMANAKA KAZUTO , SHIBAMOTO MASAHIRO , MIYOSHI AYUMI , HITOMI SATOSHI , DAVID JAYAPURAWIRA
IPC分类号： G11B5/84 , G11B5/855
CPC分类号： G11B5/8404
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus, capable of suppressing mutual contamination and/or damage of the insides of ion beam generators arranged opposite each other via a substrate, and to provide a manufacturing method FOR a magnetic recording medium. SOLUTION: A substrate processing apparatus 100 includes: a first ion beam generator 1a that applies an ion beam to one surface to be processed of a substrate W; a second ion beam generator 1b, that applies an ion beam to another surface to be processed which are arranged opposite each other via the substrate W; a first grid 10a in the first ion beam generator; and a second grid 10b in the second ion beam generator 1b are formed asymmetric. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种基板处理装置，其能够抑制经由基板彼此相对布置的离子束发生器的内部的相互污染和/或损坏，并且提供一种磁记录介质的制造方法。解决方案：基板处理装置100包括：第一离子束发生器1a，其将离子束施加到待加工的基板W的一个表面; 第二离子束发生器1b，其经由衬底W将离子束施加到彼此相对布置的另一待处理表面; 第一离子束发生器中的第一栅格10a; 并且第二离子束发生器1b中的第二栅极10b形成为不对称的。版权所有（C）2010，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式