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1. 发明专利

JP2007095750A Magnetoresistive element 审中-公开
标题翻译：磁电元件
公开(公告)号：JP2007095750A
公开(公告)日：2007-04-12
申请号：JP2005279559
申请日：2005-09-27
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： TSUNEKAWA KOJI , DAVID JAYAPURAWIRA
IPC分类号： H01L43/08 , G01R33/09 , G11B5/39 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L43/10
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/3906 , G11C11/161
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistive element of which magnetostriction constant dose not sharply change around zero of the magnetostriction constant while the MR ratio is kept high, and which can stably obtain an optional magnetostriction constant.
SOLUTION: The magnetic resistance effect element 10 includes a fixed ferromagnetic layer, a free ferromagnetic layer, and a barrier layer pinched with them. The free ferromagnetic layer uses CoFeB in which the addition of boron B is 21%≤b≤23% (b: atom%).
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供磁阻值恒定剂量在MR比保持为高时在磁致伸缩常数的零点附近不会急剧变化的磁阻元件，并且可以稳定地获得任选的磁致伸缩常数。解决方案：磁阻效应元件10包括固定铁磁层，自由铁磁层和与它们夹紧的阻挡层。自由铁磁层使用硼B的添加量为21％≤b≤23％（b：原子％）的CoFeB。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2010102815A Substrate processing apparatus and magnetic recording medium manufacturing method 审中-公开
标题翻译：基板加工设备和磁记录介质制造方法
公开(公告)号：JP2010102815A
公开(公告)日：2010-05-06
申请号：JP2009162472
申请日：2009-07-09
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： YAMANAKA KAZUTO , SHIBAMOTO MASAHIRO , MIYOSHI AYUMI , HITOMI SATOSHI , DAVID JAYAPURAWIRA
IPC分类号： G11B5/84 , G11B5/855
CPC分类号： G11B5/8404 , H01J27/024 , H01J37/04 , H01J37/09 , H01J37/3053 , H01J37/32422 , H01J2237/022 , H01J2237/0453 , H01J2237/0822 , H01J2237/0825
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus, capable of suppressing mutual contamination and/or damages to the insides of ion beam generators arranged opposite each other via a substrate, and to provide a manufacturing method for a magnetic recording medium.
SOLUTION: A substrate processing apparatus 100 includes: a first ion beam generator 1a that applies an ion beam to one surface to be processed of a substrate W; a second ion beam generator 1b, that applies an ion beam to another surface to be processed which are arranged opposite each other via the substrate W; an area of a first grid 10a in the first ion beam generator 1a; and an area of a second grid 10b in the second ion beam generator 1b corresponding to an opening of the substrate W are occluded.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种基板处理装置，其能够抑制经由基板彼此相对布置的离子束发生器的内部的相互污染和/或损坏，并且提供用于磁记录介质的制造方法。解决方案：基板处理装置100包括：第一离子束发生器1a，其将离子束施加到待加工的基板W的一个表面; 第二离子束发生器1b，其经由衬底W将离子束施加到彼此相对布置的另一待处理表面; 第一离子束发生器1a中的第一栅极10a的区域; 第二离子束发生器1b中对应于衬底W的开口的第二栅极10b的区域被封闭。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2008277693A Tunnel magnetoresistance element 审中-公开
标题翻译：隧道磁阻元件
公开(公告)号：JP2008277693A
公开(公告)日：2008-11-13
申请号：JP2007122368
申请日：2007-05-07
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： DAVID JAYAPURAWIRA , WATANABE NAOKI
IPC分类号： H01L43/10 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To obtain a TMR element which achieves a high MR ratio and a low RA.
SOLUTION: On a substrate 100, there are laminated a base layer 103, an antiferromagnetic layer 104, a magnetization stationary layer 107, a tunnel barrier layer 108 and a magnetization free layer 109 in this order, and a layer (seed layer) 101 containing Zr and Al is provided between the substrate 100 and the base layer 103. On the substrate 100, there are laminated the antiferromagnetic layer 104, the magnetization stationary layer 107, the tunnel barrier layer 108 and the magnetization free layer 109 in this order, and there is provided the layer 101 containing Zr and Al, which touches a substrate side of the antiferromagnetic layer 104.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：获得实现高MR比和低RA的TMR元件。解决方案：在基板100上，依次层叠基底层103，反铁磁层104，磁化固定层107，隧道势垒层108和无磁化层109，以及层（种子层）101设置在基板100和基底层103之间。在基板100上，在该基板100中层叠反铁磁层104，磁化固定层107，隧道势垒层108和磁化自由层109 并且提供了包含接触反铁磁层104的衬底侧的Zr和Al的层101。（C）2009，JPO和INPIT

4. 发明专利

JP2008172266A Method for manufacturing magnetoresistance element, and apparatus for manufacturing the magnetoresistance element 有权
标题翻译：制造磁阻元件的方法和制造磁阻元件的装置
公开(公告)号：JP2008172266A
公开(公告)日：2008-07-24
申请号：JP2008042175
申请日：2008-02-22
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： NAGAMINE YOSHINORI , TSUNEKAWA KOJI , DAVID JAYAPURAWIRA , MAEHARA DAIKI
IPC分类号： H01L43/12 , G11B5/39 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a magnetoresistance element having a high MR ratio, while being low in RA, and to provide an apparatus for manufacturing the magnetoresistance element.
SOLUTION: The magnetoresistance element which has an MgO layer between a first ferromagnetic layer and a second ferromagnetic layer has a step of forming the first ferromagnetic layer, a step of forming the MgO layer, and a step of forming the second ferromagnetic layer. The step of forming the MgO layer is performed under the condition that a substrate be at a floating voltage potential. Moreover, the step of forming the MgO layer may be performed, by placing the substrate to a substrate placing stage in which a part close to the substrate is an insulator. Moreover, the step of forming the MgO layer may be performed under the condition that the substrate be electrically insulated from a substrate holding part which holds the substrate.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造具有高MR比的磁阻元件的方法，同时RA低，并提供用于制造磁阻元件的装置。解决方案：在第一铁磁层和第二铁磁层之间具有MgO层的磁阻元件具有形成第一铁磁层的步骤，形成MgO层的步骤，以及形成第二铁磁层的步骤。在基板处于浮置电压电位的条件下进行形成MgO层的工序。此外，可以通过将基板放置到其中靠近基板的部分是绝缘体的基板放置台来进行形成MgO层的步骤。此外，可以在基板与保持基板的基板保持部电绝缘的条件下进行形成MgO层的工序。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2007266584A Method and device for manufacturing magnetoresistive effect element 有权
标题翻译：用于制造磁阻效应元件的方法和装置
公开(公告)号：JP2007266584A
公开(公告)日：2007-10-11
申请号：JP2007034686
申请日：2007-02-15
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： NAGAMINE YOSHINORI , TSUNEKAWA KOJI , DAVID JAYAPURAWIRA , MAEHARA DAIKI
IPC分类号： H01L43/12 , G01R33/09 , G11B5/39 , H01F10/30 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/10
CPC分类号： H01L43/08 , C23C14/081 , C23C14/16 , C23C14/568 , H01J37/32458 , H01J37/32633 , H01J37/34 , H01J37/3429 , H01J37/3447 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a method and device for manufacturing a magnetoresistive effect element having a high MR ratio (Magnetoresistance ratio) even at a low RA (electrical resistance value). SOLUTION: A magnetoresistive effect element having an MgO (magnesium oxide) layer is manufactured between a first ferromagnetic layer and a second ferromagnetic layer by depositing the MgO layer in a deposition chamber in which the surface of constituent members (a deposition chamber inner wall 37, the inner wall of an deposition-prevention shield 36, a partition plate 22, a shutter, etc. inside a first deposition chamber 21) that are provided inside the chamber for depositing the MgO layer is covered with a substance with high gettering effects against oxidizing gases such as oxygen and water. For the substance with high gettering effects, the substance with the value of oxygen gas adsorption energy of 145 kcal/mol or more is adequate, and Ta (tantalum) as the substance forming the magnetoresistive effect element is particularly preferred. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供即使在低RA（电阻值）下也具有制造具有高MR比（磁阻比）的磁阻效应元件的方法和装置。解决方案：通过在沉积室中沉积MgO层，在第一铁磁层和第二铁磁层之间制造具有MgO（氧化镁）层的磁阻效应元件，其中构成元件的表面（沉积室内壁37内，第一沉积室21内部的防沉积屏蔽36的内壁，隔板22，活门等）设置在用于沉积MgO层的室内部，被具有高吸气性的物质对氧化气体如氧气和水的影响。对于具有高吸气效果的物质，具有145kcal / mol以上的氧气吸附能量的物质是足够的，并且作为形成磁阻效应元素的物质的Ta（钽）是特别优选的。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2010080812A Method for manufacturing magnetoresistive element 审中-公开
标题翻译：制造磁性元件的方法
公开(公告)号：JP2010080812A
公开(公告)日：2010-04-08
申请号：JP2008249584
申请日：2008-09-29
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： CHOI YOUNG-SUK , NAGAMINE YOSHINORI , NAGAI MOTOMASA , TSUNEKAWA KOJI , DAVID JAYAPURAWIRA
IPC分类号： H01L43/12 , H01L21/316 , H01L43/08 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method improving an MR ratio of a magnetoresistive element by preparing a tunnel barrier layer having an optimum composition ratio in stoichiometry and high crystallinity.
SOLUTION: The manufacturing method includes: a step of forming a pinned magnetic layer (CoFeB); a step of forming a non-magnetic intermediate layer (MgO); and a step of forming a magnetic free layer (CoFeB). The step of forming the non-magnetic intermediate layer (MgO) includes a step of forming a stoichiometric magnesium oxide film by performing high-frequency sputtering a magnesium oxide target under process gas pressure of 0.0400 to 26.66 Pa.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供通过制备具有理想配比和高结晶度的最佳组成比的隧道势垒层来提高磁阻元件的MR比的制造方法。解决方案：制造方法包括：形成钉扎磁性层（CoFeB）的步骤; 形成非磁性中间层（MgO）的步骤; 和形成无磁性层（CoFeB）的步骤。形成非磁性中间层（MgO）的步骤包括通过在0.0400至26.66Pa的工艺气体压力下进行氧化镁靶的高频溅射来形成化学计量的氧化镁膜的步骤。）2010，JPO＆INPIT

7. 发明专利

JP2009065181A Method of manufacturing magnetoresistive effect element 有权
标题翻译：制造磁电效应元件的方法
公开(公告)号：JP2009065181A
公开(公告)日：2009-03-26
申请号：JP2008260231
申请日：2008-10-07
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： NAGAMINE YOSHINORI , TSUNEKAWA KOJI , DAVID JAYAPURAWIRA , MAEHARA DAIKI
IPC分类号： H01L43/12 , C23C14/08 , C23C14/34 , G01R33/09 , G11B5/39 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a method and apparatus of manufacturing a magnetoresistive effect element having a high MR ratio even at a low RA. SOLUTION: The method includes a first step of sputtering a target to deposit it on the inner wall of a film depositing chamber, wherein the target contains a substance having a larger getter effect on an oxidative gas than MgO (here, excluding a metal and a semiconductor composed of at least one of Ta, CuN, CoFe, Ru, CoFeB, Ti, Mg, Cr and Zr), and after the first step, a second step of forming an MgO layer by sputtering by applying a high-frequency power to an MgO target in the film depositing chamber. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供即使在低RA下也制造具有高MR比的磁阻效应元件的方法和装置。解决方案：该方法包括溅射靶以沉积在膜沉积室的内壁上的第一步骤，其中靶包含对氧化气体具有比MgO更大的吸气剂效应的物质（这里除了金属和由Ta，CuN，CoFe，Ru，CoFeB，Ti，Mg，Cr和Zr中的至少一种构成的半导体），在第一步骤之后，通过溅射形成MgO层的第二步骤，对膜沉积室中的MgO靶的频率功率。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2008306169A Magnetoresistive element, its manufacturing method, and magnetic multilayer film manufacturing apparatus 审中-公开
标题翻译：磁性元件及其制造方法和磁性多层膜制造设备
公开(公告)号：JP2008306169A
公开(公告)日：2008-12-18
申请号：JP2008110434
申请日：2008-04-21
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： TSUNEKAWA KOJI , DAVID JAYAPURAWIRA
IPC分类号： H01L43/08 , G11B5/39 , H01F10/12 , H01F10/32 , H01F41/18 , H01L21/8246 , H01L27/105 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistive element having excellent thermal stability and a high MR ratio.
SOLUTION: The magnetoresistive element comprises: an antiferromagnetic layer formed of a layer containing manganese; a layered magnetization fixed layer which includes a first magnetization fixed layer arranged on the antiferromagnetic layer side and formed of a layer containing a ferromagnetic material and a platinum group metal, a second magnetization fixed layer formed of a layer containing a ferromagnetic material, and a first nonmagnetic intermediate layer arranged between the first magnetization fixed layer and the second magnetization fixed layer; a magnetization free layer formed of a layer containing a ferromagnetic material; and a second nonmagnetic intermediate layer arranged between the layered magnetization fixed layer and the magnetization free layer.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供具有优异的热稳定性和高MR比的磁阻元件。解决方案：磁阻元件包括：由含锰的层形成的反铁磁层; 分层磁化固定层，其包括布置在反铁磁性层一侧并由含有铁磁材料和铂族金属的层形成的第一磁化固定层，由含有铁磁材料的层形成的第二磁化固定层和第一磁化固定层布置在第一磁化固定层和第二磁化固定层之间的非磁性中间层; 由含有铁磁材料的层形成的无磁化层; 以及布置在层状磁化固定层和无磁化层之间的第二非磁性中间层。版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2010102814A Substrate processing apparatus and magnetic recording medium manufacturing method 有权
标题翻译：基板加工设备和磁记录介质制造方法
公开(公告)号：JP2010102814A
公开(公告)日：2010-05-06
申请号：JP2009162467
申请日：2009-07-09
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： YAMANAKA KAZUTO , SHIBAMOTO MASAHIRO , MIYOSHI AYUMI , HITOMI SATOSHI , DAVID JAYAPURAWIRA
IPC分类号： G11B5/84 , G11B5/855
CPC分类号： G11B5/8404
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus, capable of suppressing mutual contamination and/or damage of the insides of ion beam generators arranged opposite each other via a substrate, and to provide a manufacturing method FOR a magnetic recording medium. SOLUTION: A substrate processing apparatus 100 includes: a first ion beam generator 1a that applies an ion beam to one surface to be processed of a substrate W; a second ion beam generator 1b, that applies an ion beam to another surface to be processed which are arranged opposite each other via the substrate W; a first grid 10a in the first ion beam generator; and a second grid 10b in the second ion beam generator 1b are formed asymmetric. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种基板处理装置，其能够抑制经由基板彼此相对布置的离子束发生器的内部的相互污染和/或损坏，并且提供一种磁记录介质的制造方法。解决方案：基板处理装置100包括：第一离子束发生器1a，其将离子束施加到待加工的基板W的一个表面; 第二离子束发生器1b，其经由衬底W将离子束施加到彼此相对布置的另一待处理表面; 第一离子束发生器中的第一栅格10a; 并且第二离子束发生器1b中的第二栅极10b形成为不对称的。版权所有（C）2010，JPO＆INPIT

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