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    • 2. 发明专利
    • FILM THICKNESS MONITOR IN WET PLATING
    • JPS57168102A
    • 1982-10-16
    • JP5382881
    • 1981-04-10
    • CITIZEN WATCH CO LTD
    • TAKAHASHI AKIKIMI
    • C25D5/00G01B7/06
    • PURPOSE:To detect the change in thickness of a plated film, by connecting two electrode terminals arranged on an untreated surface of an insulating substrate with a specified interval being provided by a high resistance film, holding the member in a plating bath, and detecting the change in resistance between one electrode and the other electrode with the potential of one electrode being maintained at the same potential of the plating sample. CONSTITUTION:The high resistance film 2 of Ta2N is coated on the insulating substrate 1. Two electrode terminals 31 and 32 are evaporated on the substrate with the specified interval 4 being provided, and a monitor 10 is formed. One electrode terminal 31 is conncted to the negative electrode side of a plating power source 6 so that the potential of the electrode becomes the same potential of the plating sample 5. The positive electrode side of the plating power source 6 is connected to the plating electrode 7. The entire member except the plating power source 6 is held in the plating bath, and a plating film is formed on the side of the electrode 31 at the same speed as the plating sample. By detecting the change in the resistance between the floating electrode terminal 32 and the electrode terminal 31, the change in the film thickness of the plating is quantitatively detected.
    • 7. 发明专利
    • ION PLATING APPARATUS FOR MULTIICOMPONENT COATING
    • JPS5594473A
    • 1980-07-17
    • JP192679
    • 1979-01-11
    • CITIZEN WATCH CO LTD
    • TAKAHASHI AKIKIMI
    • H01J37/32C23C14/22C23C14/24C23C14/32C23C14/34
    • PURPOSE:To make the control of component ratio easy and to form the multi-component coating, by providing one or two or more of sputtering electrode near the substrate and composing so as to be co-deposited the substrate composing the above electrode with the substance from evaporation source on the surface of the substrate at the same time. CONSTITUTION:Apparatus is constructed by arranging the evaporation source 2 and the substrate 5 facing each other in the vacuum room 1 provided gas exhausting system (not shown in the figure) and gas introducing system and newly providing the sputtering electrode 6 near the substrate 5 with an usual construction arranged the thermal cathode 3 and the anode 4 is order to form discharge plasma. It is constructed so as to be applied a hogh negative voltage on the electrode 6 in the room 1. By the above apparatus, the substance from the source 2 and that of composing the electrode 6, are co-deposited on the substrate 5 and also, the component ratio is able to control easily. Multi-component coating having disired component ratio, is able to form easily with a cheap apparatus compared with usual method.
    • 8. 发明专利
    • IONNPLATING DEVICE
    • JPS5481594A
    • 1979-06-29
    • JP14779977
    • 1977-12-09
    • CITIZEN WATCH CO LTD
    • TAKAHASHI AKIKIMI
    • C23C14/32C23C14/50
    • PURPOSE:A high-frequency power adjusting body is inserted into a grounded circuit of a base plate holder which hold a substrate, and thereby a sufficient ion bombard phenomenon for the film-formed surface of the substrate can be carried out. CONSTITUTION:Vacuum chamber 1 is exhausted to a vacuum of 10 -10 Torr by exhausting system P through exhaust port 2. After this, vacuum chamber 1 is maintained at a vacuum of 10 -10 by drawing in gas of at least 10 by means of gas drawing-in system G via gas conduit 3. Next, high-frequency power source Rf is driven and a high-frequency discharge plasma is formed by an ionization electrode 5. Then, the values of L, C. R, which are the component elements of high- frequency power adjusting body S are properly adjusted, and thereby an induced high-frequency electric field due to high-frequency resonance is formed on the substrate. By the ion-bombard phenomenon on the base plate to the negative bias with respect to the plasma due to the characteristics in the plasma of the induced electric field, the substrate is cleaned and volatile matters are evaporated.
    • 10. 发明专利
    • Method for measuring pin hole quantitatively in plating film
    • 用于在电镀膜中定量测定针孔的方法
    • JPS5944644A
    • 1984-03-13
    • JP15536882
    • 1982-09-08
    • Citizen Watch Co Ltd
    • ANDOU NAOTAKETAKAHASHI AKIKIMI
    • G01N19/08G01N21/84G01N21/88
    • G01N21/8803G01N21/894
    • PURPOSE:To detect pin holes in a plating film according to the form by disposing a piece of a simple plated with a plating film in a vacuum chamber and counting the number of pore generating positions under reduced pressure. CONSTITUTION:A sample piece 12 prepared by plating nickel phosphor alloy on the aluminum substrate surface is laid on a hot plate 15, and the vacuum chamber 7 is evacuated through an evacuating valve 9. Then the valve 9 is closed, and nitrogen gas is introduced through a gas introducing valve 10 to reach the prescribed pressure. An operating rod 11 is operated to dip the piece 12 into a laboratory dish 13 containing pure water therein, and the chamber 7 is evacuated again. Since the nitrogen gas occluded in the pin holes of the plating film appears on the film surface to form bubbles, these are counted. After the piece 12 is again heated and dried, it is dipped into the dish 14 containing 5% aqueous caustic soda solution, and the evacuation is performed. In case of existence of the pin holes reaching the substrate, these react with the aluminum substrate and hydrogen gas babbles are generated. By counting the number of positions on which these babbles are generated, the number of pin holes is measured.
    • 目的:通过在真空室中放置一块简单的电镀薄膜并在减压下计数孔产生位置,根据形式检测镀膜中的针孔。 构成:通过在铝基板表面上镀镍磷光体合金而制备的样品片12放置在热板15上,真空室7通过排气阀9抽真空。然后关闭阀9,引入氮气 通过气体导入阀10达到规定的压力。 操作杆11被操作以将件12浸入其中含有纯净水的实验室皿13中,再次抽空腔室7。 由于在膜表面上露出镀膜的针孔内的氮气,因此形成气泡,因此计数。 将片12再次加热干燥后,将其浸入含有5%苛性钠水溶液的培养皿14中,进行抽真空。 在存在针孔到达基板的情况下,这些与铝基板反应,产生氢气混合。 通过计数产生这些不匹配的位置的数量,测量针孔的数量。