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1. 发明专利

JP2004260024A Vapor phase epitaxial growth process 审中-公开
标题翻译：蒸气相外延生长过程
公开(公告)号：JP2004260024A
公开(公告)日：2004-09-16
申请号：JP2003050183
申请日：2003-02-27
申请人： Benesol Inc , Japan Pionics Co Ltd , Sci Technol Kk , Tokyo Inst Of Technol , サイエンステクノロジー株式会社 , 日本パイオニクス株式会社 , 東京工業大学長 , 株式会社ベネソル
发明人： FUNAKUBO HIROSHI , INOUE YOSHIHISA , NANBA TORU , YAMAGUCHI TAKAHIRO , TAKAMATSU YUKICHI , TONARI KAZUAKI
IPC分类号： C23C16/40 , C23C16/52 , H01L21/31 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide a vapor phase epitaxial growth process producing a ferroelectric film of PZT, BST, SBT or PLZT having excellent quality and purity by supplying a preset quantity of a solid CVD material to a semiconductor production system over a long time regardless of the adhesion state of the solid CVD material to the material channel in a vaporizer even when a solid CVD material dissolved into an organic solvent is employed.
SOLUTION: Each vaporization gas of a CVD material being employed for depositing the ferroelectric film is fed to a vaporization gas mixing means while measuring the concentration and/or flow rate of at least one kind of CVD material using FTIR. Mixed vaporization gas is fed to the semiconductor production system where vapor phase epitaxial growth is conducted.
COPYRIGHT: (C)2004,JPO&NCIPI
摘要翻译：要解决的问题：为了提供通过向半导体生产系统提供预定量的固体CVD材料，通过在半导体生产系统中提供预定量的固体CVD材料来提供产生具有优良品质和纯度的PZT，BST，SBT或PLZT的铁电薄膜的气相外延生长工艺即使使用溶解在有机溶剂中的固体CVD材料，无论固体CVD材料在蒸发器中的材料通道的粘附状态如何长。解决方案：使用FTIR测量至少一种CVD材料的浓度和/或流速，将用于沉积铁电体膜的CVD材料的每个气化气体进料到蒸发气体混合装置。混合汽化气体被供给到进行气相外延生长的半导体生产系统中。版权所有（C）2004，JPO＆NCIPI

2. 发明专利

JP2004259905A Reactor for vapor growth deposition 审中-公开
公开(公告)号：JP2004259905A
公开(公告)日：2004-09-16
申请号：JP2003048489
申请日：2003-02-26
申请人： Benesol Inc , Japan Pionics Co Ltd , Sci Technol Kk , Tokyo Institute Of Technology , サイエンステクノロジー株式会社 , 国立大学法人東京工業大学 , 日本パイオニクス株式会社 , 株式会社ベネソル
发明人： FUNAKUBO HIROSHI , INOUE YOSHIHISA , NANBA TORU , TAKAMATSU YUKICHI , TONARI KAZUAKI , YAMAGUCHI TAKAHIRO
IPC分类号： C23C16/44 , C23C16/448 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To enable formation of a uniform film including no particles by preventing that particles are generated due to the flow of gas into a substrate transfer port within a reaction chamber and thereby uniform flow of gas at a cylindrical and linear nozzle is prevented.
SOLUTION: A transfer port cover (shielding means) 16 is attached in the side of reaction chamber 11 of a transfer gate valve 3 for separating a vacuum load lock chamber 4 and the reaction chamber 11. This transfer port cover 16 is operated vertically with an air cylinder 15 from an external side of the reaction chamber 11 through a transfer port cover holding rod 13 and a vacuum bellow flange 14. Moreover, since four net type members or hole opening members 17 are provided as the unifying means at the internal side of the nozzle of reactor, a uniform film can be formed with less particles.
COPYRIGHT: (C)2004,JPO&NCIPI

3. 发明专利

JP2004111761A Vapor deposition method 审中-公开
标题翻译：蒸气沉积法
公开(公告)号：JP2004111761A
公开(公告)日：2004-04-08
申请号：JP2002274228
申请日：2002-09-20
申请人： Horiba Ltd , Japan Pionics Co Ltd , Tokyo Inst Of Technol , 日本パイオニクス株式会社 , 東京工業大学長 , 株式会社堀場製作所
发明人： FUNAKUBO HIROSHI , ASANO GOJI , SATAKE TSUKASA , OTSUKI KUNIO , TAKAMATSU YUKICHI , TONARI KAZUAKI
IPC分类号： C23C16/40 , C23C16/455 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide a vapor deposition method which can easily detect an adhesion, etc. of a solid CVD material in a material flow path in a carburetor, in the formation of a film of PZT, BST, SBT and PLZT, and can obtain a ferroelectric film having the superior quality and purity, without degrading the production yield.
SOLUTION: A component of a mixed evaporation gas of CVD materials for use in forming the ferroelectric film is analyzed by using FTIR, and the gas is supplied to a semiconductor manufacturing apparatus, while monitoring, to carry out vapor deposition.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种气相沉积方法，其可以容易地检测在化油器中的材料流动路径中的固体CVD材料的粘附等，以形成PZT，BST，SBT和 PLZT，并且可以获得具有优良品质和纯度的铁电体膜，而不降低产率。解决方案：通过使用FTIR分析用于形成铁电体膜的CVD材料的混合蒸发气体的组分，并且在监测的同时将气体供应到半导体制造装置以进行气相沉积。版权所有（C）2004，JPO

4. 发明专利

JP2003013234A Vaporizer and device for vaporizing/feeding 审中-公开
标题翻译：用于蒸发/进料的蒸发器和装置
公开(公告)号：JP2003013234A
公开(公告)日：2003-01-15
申请号：JP2001349840
申请日：2001-11-15
申请人： Japan Pionics Co Ltd , 日本パイオニクス株式会社
发明人： TAKAMATSU YUKICHI , YONEYAMA GAKUO , KIRIYAMA KOJI , ASANO AKIYOSHI , TONARI KAZUAKI , IWATA MITSUHIRO
IPC分类号： C23C16/448 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a vaporizer and a device for feeding a gaseous CVD raw material into a chemical vapor deposition(CVD) apparatus used for manufacturing semiconductor and the like, which efficiently vaporize and feed the material at a desired concentration and flow rate, without causing precipitation and deposition of the solid CVD raw material at a raw material supply port, even when a solid CVD raw material is used.
SOLUTION: The vaporizer is characterized in that a contacting part of a CVD raw-material feeding part with the CVD raw material is composed of a corrosion resistant synthetic resin. The device for vaporizing/feeding comprises the above vaporizer, and a cooler for cooling a metal component of the CVD raw-material feeding part, when heating a vaporizing chamber.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种用于将气态CVD原料供给到用于制造半导体等的化学气相沉积（CVD）装置中的蒸发器和装置，其以期望的浓度和流量有效地蒸发并进料该材料，即使使用固体CVD原料，也不会在原料供给口引起固体CVD原料的沉淀和沉积。解决方案：蒸发器的特征在于，CVD原料供给部与CVD原料的接触部由耐蚀合成树脂构成。用于蒸发/进料的装置包括上述蒸发器，以及用于在加热蒸发室时冷却CVD原料进料部分的金属组分的冷却器。

5. 发明专利

JP2005314631A Material for forming insulation film and method for film-forming using the same 有权
标题翻译：用于形成绝缘膜的材料和使用其形成膜的方法
公开(公告)号：JP2005314631A
公开(公告)日：2005-11-10
申请号：JP2004269139
申请日：2004-09-16
申请人： Hitachi Metals Ltd , Japan Pionics Co Ltd , 日本パイオニクス株式会社 , 日立金属株式会社
发明人： TAKAMATSU YUKICHI , YONEYAMA GAKUO , TONARI KAZUAKI , SOEJIMA NORIKATSU , KIRIYAMA KOJI , ISHII TAKASHI
IPC分类号： C09D1/00 , C09D1/02 , C09D5/25 , C23C16/42 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide a material for forming an insulation film containing high quality and high purity lithium or an insulation film containing lithium silicate on a surface of various substrates by spin coating method, mist deposition method or CVD method and to provide a film forming method using the same.
SOLUTION: The invention relates to the material for forming the insulation film comprising an alkoxide compound of lithium and at least one kind of organic solvent selected from an ether, a ketone, an ester, an alcohol, and a hydrocarbon. The invention relates to the material for forming the insulation film comprising the alkoxide compound of lithium or carboxylate of lithium, tetramethoxysilane or tetraethoxysilane and the organic solvent. The film-forming method for forming the insulation film comprises use of the material.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于通过旋涂法，雾化沉积法或CVD法在各种基底的表面上形成含有高质量和高纯度锂的绝缘膜或含有硅酸锂的绝缘膜的材料，以及提供使用其的成膜方法。解决方案：本发明涉及用于形成绝缘膜的材料，其包含锂的醇盐化合物和选自醚，酮，酯，醇和烃的至少一种有机溶剂。本发明涉及形成包含锂，四甲氧基硅烷或四乙氧基硅烷的锂或羧酸盐的醇盐化合物和有机溶剂的绝缘膜的材料。用于形成绝缘膜的成膜方法包括使用该材料。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2005150520A Vaporizer 审中-公开
标题翻译：喷雾器
公开(公告)号：JP2005150520A
公开(公告)日：2005-06-09
申请号：JP2003388061
申请日：2003-11-18
申请人： Japan Pionics Co Ltd , 日本パイオニクス株式会社
发明人： TAKAMATSU YUKICHI , TONARI KAZUAKI , ASANO AKIYOSHI , KIRIYAMA KOJI , ISHII TAKASHI
IPC分类号： C23C16/448 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a vaporizer for efficiently vaporizing CVD material obtained by dissolving water and a liquid CVD material or a solid CVD material into organic solvent with a stably desired density and flow rate, and supplying it to a semiconductor manufacturing apparatus.
SOLUTION: The vaporizer is provided with a vaporizing chamber of a liquid material, a jetting pipe for supplying the liquid material to the vaporizing chamber, a vaporized gas receptacle, and a heating means of the vaporizing chamber. The jetting pipe has a double structure consisting of an inner pipe and an outer pipe, and an opening part is formed at the jetting port of the vaporizing chamber at the inner pipe. It is more desirable that the vaporizing chamber is filled with a solid filler.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种蒸发器，用于有效地将具有稳定的所需密度和流速的水和液态CVD材料或固体CVD材料溶解在有机溶剂中而获得的CVD材料蒸发，并将其供应到半导体制造仪器。解决方案：蒸发器设置有液体材料的蒸发室，用于将液体材料供应到蒸发室的喷射管，蒸发气体容器和蒸发室的加热装置。喷射管具有由内管和外管组成的双重结构，并且在内管处的蒸发室的喷射口处形成有开口部。更理想的是，蒸发室填充有固体填料。版权所有（C）2005，JPO＆NCIPI

7. 发明专利

JP2003332243A Vaporizer and vapor feeding apparatus 有权
标题翻译：蒸气和蒸汽送料装置
公开(公告)号：JP2003332243A
公开(公告)日：2003-11-21
申请号：JP2002136892
申请日：2002-05-13
申请人： Japan Pionics Co Ltd , 日本パイオニクス株式会社
发明人： TAKAMATSU YUKICHI , TONARI KAZUAKI , IWATA MITSUHIRO , KIRIYAMA KOJI , ASANO AKIYOSHI
IPC分类号： C23C16/448 , H01L21/205
CPC分类号： C23C16/4485 , Y10S261/65
摘要： PROBLEM TO BE SOLVED: To provide a vaporizer in which a separation and deposition of a solid CVD (chemical vapor deposition) material in a vaporization chamber can be prevented and a vapor feeding can be very efficiently carried out in a desired concentration and flow even if the vapor feeding is carried out decreasing a flow of a carrier gas fed with the CVD material, and a vapor feeding apparatus.
SOLUTION: A CVD material feeding potion includes the flow path of the material, the flow path of the carrier gas, and a mixing flow path, which is located downstream of those flow pathes joined, communicated with the vaporizer. The vaporizer includes a means by which the flow path of the CVD material causes a pressure loss of the CVD material. The vapor feeding apparatus is equipped with a means, which causes the pressure loss of the CVD material, between a liquid flow control portion and the vaporizer.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种蒸发器，其中可以防止在汽化室中分离和沉积固体CVD（化学气相沉积）材料，并且可以以期望的浓度非常有效地进行蒸气进料，即使进行蒸气进料减少了用CVD材料供给的载气的流动，也有蒸气供给装置。解决方案：CVD材料输送部分包括材料的流动路径，载气的流动路径，以及位于连接的蒸发器连通的那些流动衬套的下游的混合流动路径。蒸发器包括CVD材料的流动路径导致CVD材料的压力损失的装置。蒸气供给装置配备有在液体流动控制部分和蒸发器之间引起CVD材料的压力损失的装置。版权所有（C）2004，JPO

8. 发明专利

JP2004063843A Apparatus and method for supplying vaporization 审中-公开
公开(公告)号：JP2004063843A
公开(公告)日：2004-02-26
申请号：JP2002220882
申请日：2002-07-30
申请人： Japan Pionics Co Ltd , 日本パイオニクス株式会社
发明人： TAKAMATSU YUKICHI , TONARI KAZUAKI , IWATA MITSUHIRO , MORI YUJI , KIRIYAMA KOJI , ASANO AKIYOSHI
IPC分类号： C23C16/448 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and a method for supplying vaporization, which obtains high quality and high-purity semiconductor film, by efficiently performing vaporization with a single vaporizer for supply to a semiconductor manufacturing device, without causing deterioration in individual CVD materials or attachment of solid materials in formation of a ferroelectric film such as BZT, BST, SBT, PLZT or the like.
SOLUTION: The apparatus for supplying vaporization consists of a plurality of CVD material supply lines, each having a liquid flow rate control unit; a means for mixing the plural kinds of CVD materials supplied from these CVD material supply lines; a filter for filtering the mixed CVD materials; and the vaporizer, in which a CVD material supply part is at least incorporated with a first channel for flowing the CVD materials, a second channel for flowing a carrier gas and a third channel for converging the CVD materials and the carrier gas from the two channels and injecting the same to a vaporization chamber. Supplying of vaporization is performed by using the apparatus.
COPYRIGHT: (C)2004,JPO

9. 发明专利

JP2004158543A Vaporizer 有权
公开(公告)号：JP2004158543A
公开(公告)日：2004-06-03
申请号：JP2002321065
申请日：2002-11-05
申请人： Japan Pionics Co Ltd , 日本パイオニクス株式会社
发明人： TAKAMATSU YUKICHI , MURANAGA NAOKI , YONEYAMA GAKUO , TONARI KAZUAKI , IWATA MITSUHIRO , TAYAMA TATSUKI , SOEJIMA NORIKATSU
IPC分类号： C23C16/448 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a vaporizer which prevents the closure in the vicinity of the jet port of a vaporizing chamber due to precipitation or adhesion of a solid CVD raw material from occurring for a long time, even when an amount of supplying carrier gas to be supplied together with the CVD raw material is reduced or the concentration of the CVD raw material to be solved in a solvent is raised, vaporized and supplied, and extremely efficiently vaporizes and supplies the raw material at a desired concentration and flow rate.
SOLUTION: A CVD raw material supply unit contains a jet tube having a double structure of an inside channel and an outside channel constituted so that the sectional area of the channel in the jet port of the vaporizing chamber is wider than that of the channel except the jet port of the chamber.
COPYRIGHT: (C)2004,JPO

10. 发明专利

JP2004071849A Vaporizing/supplying apparatus and vaporizing/ supplying method 有权
公开(公告)号：JP2004071849A
公开(公告)日：2004-03-04
申请号：JP2002229464
申请日：2002-08-07
申请人： Japan Pionics Co Ltd , 日本パイオニクス株式会社
发明人： TAKAMATSU YUKICHI , TONARI KAZUAKI , IWATA MITSUHIRO , MORI YUJI , KIRIYAMA KOJI , ASANO AKIYOSHI
IPC分类号： C23C16/448 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a vaporizing/supplying apparatus and a vaporizing/supplying method wherein in formation of ferroelectric films such as PZT, BST, SBT, and PLZT, vaporization is effectively achieved with one vaporizer without causing deterioration of each CVD stock material and adhesion of solid matter, and vaporized gas is supplied to a semiconductor manufacturing apparatus to ensure a high quality high purity semiconductor film.
SOLUTION: The vaporizing/supplying apparatus comprising a plurality of CVD stock material supply lines including a fluid flow rate control section, means for mixing a plurality of kinds of CVD stock materials supplied from the CVD stock material supply lines, a filter for filtrating a mixed CVD stock material, a vaporizer for vaporizing the filtrated mixed CVD stock material, and a filter for filtrating vaporized gas of the mixed CVD stock material. The vaporizing/supplying apparatus is used for vaporized gas supply.
COPYRIGHT: (C)2004,JPO

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