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1. 发明专利

JP2005328029A Nonvolatile semiconductor storage element and method for manufacturing the same 审中-公开
标题翻译：非挥发性半导体存储元件及其制造方法
公开(公告)号：JP2005328029A
公开(公告)日：2005-11-24
申请号：JP2005030859
申请日：2005-02-07
申请人： Asahi Glass Co Ltd , Mitsumasa Koyanagi , 光正小柳 , 旭硝子株式会社
发明人： TAKADA MASAAKI , KOYANAGI MITSUMASA
IPC分类号： B82B1/00 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage element contributing to improvement in the speed of data rewriting operation and the miniaturization and high density of the element, and to provide a method for manufacturing the nonvolatile semiconductor storage element. SOLUTION: The nonvolatile semiconductor storage element is provided with a source area 6 and a drain area 7 which are formed on a semiconductor substrate 1, a tunnel insulating layer 2 formed on a channel formation area, a charge holding layer 3 for holding charge injected from the channel, an inter-gate insulating layer 4, and a control gate 5. The charge holding layer 3 is constituted of ultrafine particulates (a work function is ≥4.2 eV) which are independently dispersed at the density of 10 12 to 10 14 particulates/cm 3 serving as floating gates having grain size of ≤5 nm, and a mother phase insulator (amorphous substance of which electron affinity is ≤1.0 eV). COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种有助于提高数据重写操作的速度和元件的小型化和高密度的非易失性半导体存储元件，并且提供一种用于制造非易失性半导体存储元件的方法。解决方案：非易失性半导体存储元件设置有形成在半导体基板1上的源极区域6和漏极区域7，形成在沟道形成区域上的隧道绝缘层2，用于保持的电荷保持层3 从沟道注入的电荷，栅极间绝缘层4和控制栅极5.电荷保持层3由以10 12 至10 14 颗粒/ cm 3 / SP>作为具有≤5nm的晶粒尺寸的浮动栅极，以及母相绝缘体（其中电子亲和力≤1.0eV）。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2005340768A Many-valued non-volatile semiconductor memory element and its manufacturing method 审中-公开
标题翻译：多值非易失性半导体存储元件及其制造方法
公开(公告)号：JP2005340768A
公开(公告)日：2005-12-08
申请号：JP2005030860
申请日：2005-02-07
申请人： Asahi Glass Co Ltd , Mitsumasa Koyanagi , 光正小柳 , 旭硝子株式会社
发明人： TAKADA MASAAKI , KOYANAGI MITSUMASA
IPC分类号： H01L21/316 , H01L21/8247 , H01L27/115 , H01L29/786 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To provide a many-valued non-volatile semiconductor memory element which can perform a stable many-valued memory operation and can keep a sufficient memory window, and to provide its manufacturing method. SOLUTION: The structure is formed on a semiconductor substrate 1 and includes a source area 6, a drain area 7, a tunnel insulating layer 2 formed on a channel forming area, a charge holding layer 3 holding a charge introduced from a channel, an inter-gate insulating layer 4, and a control gate layer 5. The charge holding layer 3 is composed of ultra fine particles(work function is 4.2 eV or less) which are separately dispersed at a density of 10 12 -10 14 /cm 3 and function as a floating gate of a diameter of 5 nm or smaller, and a base insulator(an amorphous substance having an electronic affinity of 1.0 eV or less). COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供可以执行稳定的多值存储器操作并且可以保持足够的存储器窗口并提供其制造方法的多值非易失性半导体存储器元件。解决方案：结构形成在半导体衬底1上，包括源极区6，漏极区7，形成在沟道形成区上的隧道绝缘层2，电荷保持层3，其保持从沟道引入的电荷，栅极间绝缘层4和控制栅极层5.电荷保持层3由以10 <12>的密度分开分散的超细颗粒（功函数为4.2eV以下） / SP> -10 14 / cm 3 ，并且用作直径为5nm以下的浮栅，以及基极绝缘体（具有电子亲和性的非晶体 1.0eV以下）。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2004055969A Nonvolatile semiconductor storage element and manufacturing method 有权
公开(公告)号：JP2004055969A
公开(公告)日：2004-02-19
申请号：JP2002213900
申请日：2002-07-23
申请人： Asahi Glass Co Ltd , Mitsumasa Koyanagi , 小柳光正 , 旭硝子株式会社
发明人： KOYANAGI MITSUMASA , TAKADA MASAAKI , KONDO SHINJI
IPC分类号： C23C14/06 , H01L21/28 , H01L21/336 , H01L21/8247 , H01L27/115 , H01L29/423 , H01L29/788 , H01L29/792
CPC分类号： H01L29/42348 , B82Y10/00 , H01L21/28273 , H01L21/28282 , H01L29/42332 , H01L29/66825 , H01L29/66833 , H01L29/7883 , H01L29/7888 , Y10S977/773 , Y10S977/936
摘要： PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage element capable of decreasing a data write and erasure time, remarkably increasing the number of rewrite times at the same time, and operating at a low power consumption. SOLUTION: In the nonvolatile semiconductor storage element, an electric charge hold layer 3 adjacent to a tunnel insulating film 2 is made of an electric insulating insulation layer 3b. The layer 3 comprises one kind of a single element substance or a compound or more acting like a floating gate whose particle diameter is 5nm or below and independently and dispersingly containing ultra-fine particles 3a, at a surface density of 10 +12 to 10 +14 sets of particles per cm 2 of the electric charge hold layer 3. COPYRIGHT: (C)2004,JPO

4. 发明专利

JP2009242194A Synthetic quartz glass for optical member 审中-公开
标题翻译：用于光学构件的合成石英玻璃
公开(公告)号：JP2009242194A
公开(公告)日：2009-10-22
申请号：JP2008092525
申请日：2008-03-31
申请人： Asahi Glass Co Ltd , 旭硝子株式会社
发明人： TAKADA MASAAKI , SHO RYU , IWATA KATSURA , OGAWA TOMOTAKA
IPC分类号： C03B20/00 , C03B8/04 , G02B1/00 , G03F7/20
CPC分类号： C03B19/1453 , C03B19/1469
摘要： PROBLEM TO BE SOLVED: To provide an optical device suitable for setting birefringences of an optical axis direction and an off-axis direction at specified values in accordance with the situation for use of an optical member. SOLUTION: The optical member is used in an optical device which uses light having a wavelength of ≤250 nm as a light source. When the average value of birefringence at a plane perpendicular to the optical axis direction of the optical member is defined as an optical axis direction average birefringence AveBRcos2θ xy and the maximum value of birefringence at a plane perpendicular to the off-axis direction of the optical member is defined as an off-axis direction maximum birefringence BR max , the following formula (1) or (2) and formula (3) hold, where the unit of the numerical value of each formula is nm/cm. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种适合于根据光学构件的使用情况将光轴方向和离轴方向的双折射设定在规定值的光学装置。光学构件用于使用波长≤250nm的光作为光源的光学装置。当垂直于光学构件的光轴方向的平面处的双折射的平均值被定义为光轴方向平均双折射AveBRcos2θ和垂直于关闭的平面处的双折射的最大值将光学构件的轴方向定义为离轴方向最大双折射BR max ，如下式（1）或（2）和式（3）所示，其中数值单位每个公式的值为nm / cm。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2004281725A Heat treatment apparatus of semiconductor 有权
公开(公告)号：JP2004281725A
公开(公告)日：2004-10-07
申请号：JP2003071276
申请日：2003-03-17
申请人： Asahi Glass Co Ltd , 旭硝子株式会社
发明人： TAKADA MASAAKI , KAGEYAMA NOBUO , OTAGURO SUSUMU
IPC分类号： C23C16/44 , H01L21/205 , H01L21/22
摘要： PROBLEM TO BE SOLVED: To provide a heat treatment apparatus of a semiconductor satisfying the requirements of larger size, large processing quantity, prevention of particle contamination, and the like, while exhibiting excellent sealing performance in which the shape and use of an outer tube being used are not limited, and the outer tube exhibits a sufficient durability even if not supported on the inner circumference. SOLUTION: The heat treatment apparatus 60 of a semiconductor comprises an outer tube 72 of silicon carbide, a base 65 for supporting the outer tube 72 airtightly at the lower part thereof, a cover 66 capable of opening/closing the central opening of the base 65, and a furnace wall 63 surrounding the outer circumferential surface of the outer tube 72 and provided with a heater 64 on the inside. An annular sealing member 68 and an annular supporting member 92 are interposed between the outer tube 72 and the base 65 and the contact position P of the supporting member 92 and the outer tube 72 is located on the inner circumferential side of the outer circumferential end Q of the outer tube 72. COPYRIGHT: (C)2005,JPO&NCIPI

6. 发明专利

JP2007223889A Synthetic quartz glass with radial distribution of fast axes of birefringence and process for producing the same 审中-公开
标题翻译：具有快速轴向径向分布的合成石英玻璃及其制造方法
公开(公告)号：JP2007223889A
公开(公告)日：2007-09-06
申请号：JP2007017728
申请日：2007-01-29
申请人： Asahi Glass Co Ltd , 旭硝子株式会社
发明人： TAKADA MASAAKI , AGATA NORIYUKI , OGAWA TOMOTAKA , IWATA KATSURA
IPC分类号： C03B20/00 , C03B8/04
CPC分类号： C03B19/1453 , C03B2201/04 , Y02P40/57
摘要： PROBLEM TO BE SOLVED: To obtain synthetic quartz glass which has a radial distribution of fast axes of birefringence. SOLUTION: The synthetic quartz glass has a diameter of 100 mm or more and is used in an optical apparatus comprising a light source emitting light having a wavelength of 250 nm or less. Further, the synthetic quartz glass has, in a region located inward from the periphery thereof by 10 mm or more in a plane perpendicular to the optical axis of the synthetic quartz glass: a birefringence of 0.5 nm or less per thickness of 1 cm with respect to a light having a wavelength of 193 nm; an OH group concentration of 60 ppm or less; an averaged differential OH group concentration from the center of the synthetic quartz glass toward a peripheral direction thereof, normalized with respect to the radius of the synthetic quartz glass, of not less than -60 ppm and less than -8 ppm; and a prescribed OH group concentration distribution. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：获得具有双折射快轴的径向分布的合成石英玻璃。解决方案：合成石英玻璃的直径为100mm以上，并且用于包括发射波长为250nm以下的光的光源的光学装置中。此外，合成石英玻璃在与合成石英玻璃的光轴垂直的面内从其周边向内侧10mm以上的区域，相对于1cm的厚度，相对于1cm的双折射为0.5nm以下到波长为193nm的光; OH基浓度为60ppm以下; 从合成石英玻璃的中心朝向其圆周方向的中心的相对于合成石英玻璃的半径归一化的平均差示OH基浓度为-60ppm以上且小于-8ppm的平均值; 和规定的OH基浓度分布。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2007223888A Synthetic quartz glass with fast axes of birefringence distributed in concentric-circle tangent directions and process for producing the same 审中-公开
标题翻译：合成锥形玻璃与聚合圆形方向分布的快速轴的方向及其生产方法
公开(公告)号：JP2007223888A
公开(公告)日：2007-09-06
申请号：JP2007017727
申请日：2007-01-29
申请人： Asahi Glass Co Ltd , 旭硝子株式会社
发明人： TAKADA MASAAKI , AGATA NORIYUKI , OGAWA TOMOTAKA , IWATA KATSURA
IPC分类号： C03B20/00 , C03B8/04
CPC分类号： C03B19/1453 , C03B2201/02 , C03B2201/04 , Y02P40/57
摘要： PROBLEM TO BE SOLVED: To obtain synthetic quartz glass which has phase-advance axes of birefringence distributed in concentric-circle tangent directions.
SOLUTION: The synthetic quartz glass has a diameter of 100 mm or more and is used in an optical apparatus comprising a light source emitting light having a wavelength of 250 nm or less. Further, the synthetic quartz glass has, in a region located inward from the periphery thereof by 10 mm or more in a plane perpendicular to the optical axis of the synthetic quartz glass: a birefringence of 0.5 nm or less per thickness of 1 cm with respect to a light having a wavelength of 193 nm; an OH group concentration of 60 ppm or less; an averaged differential OH group concentration from the center of the synthetic quartz glass toward a peripheral direction thereof, normalized with respect to the radius of the synthetic quartz glass, of -8 ppm to +60 ppm, and a prescribed OH group concentration distribution.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：获得具有以同心圆切线方向分布的双折射相位提前轴的合成石英玻璃。解决方案：合成石英玻璃的直径为100mm以上，并且用于包括发射波长为250nm以下的光的光源的光学装置中。此外，合成石英玻璃在与合成石英玻璃的光轴垂直的面内从其周边向内侧10mm以上的区域，相对于1cm的厚度，相对于1cm的双折射为0.5nm以下到波长为193nm的光; OH基浓度为60ppm以下; 从合成石英玻璃的中心朝向其圆周方向的中心的平均差分OH基浓度相对于合成石英玻璃的半径归一化为-8ppm至+ 60ppm，并且规定的OH基浓度分布。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2012250867A Method for molding quartz glass 有权
标题翻译：用于模制石英玻璃的方法
公开(公告)号：JP2012250867A
公开(公告)日：2012-12-20
申请号：JP2011123075
申请日：2011-06-01
申请人： Asahi Glass Co Ltd , 旭硝子株式会社
发明人： ENOMOTO KOTARO , FUKAZAWA YASUSHI , IWATA KATSURA , TAKADA MASAAKI , MORITA RYUSUKE
IPC分类号： C03B11/08 , C03B20/00 , G02B1/02
CPC分类号： Y02P40/57
摘要： PROBLEM TO BE SOLVED: To provide a method for molding quartz glass which can suppress inclusion of bubbles in a glass molded body and deterioration in the flatness of the molded body and can improve the recyclability of a mold.SOLUTION: The method for molding quartz glass includes putting quartz glass 8 in a mold 1 surrounded by a bottom plate 6, sidewalls 3 and a top plate 5, melting the quartz glass 8 by heating to its softening point or above, and molding the molten glass, wherein the bottom plate 6 comprises at least two carbon plates, the plates are laid so that mutually adjacent end faces can be bonded, and the distance from the bonded surface of the plates to the internal surface 31 of the closest sidewall 3 of the mold 1 is ≤15% of the distance to an internal surface 31 opposite to the above internal surface 31.
摘要翻译：要解决的问题：提供一种能够抑制玻璃成形体中的气泡的含有成形的石英玻璃的成型方法和成形体的平坦度的劣化，能够提高模具的再生性。解决方案：石英玻璃的成型方法包括将石英玻璃8放置在由底板6，侧壁3和顶板5包围的模具1中，通过加热至其软化点或以上来熔化石英玻璃8，以及模制熔融玻璃，其中底板6包括至少两个碳板，这些板被铺设成使得相互相邻的端面能够接合，并且从板的接合表面到最靠近的侧壁的内表面31的距离 3的模具1的距离为与内表面31相对的内表面31的距离的15％。（C）2013，JPO＆INPIT

9. 发明专利

JP2011098865A Method for manufacturing quartz glass preform 有权
标题翻译：制造石英玻璃预制件的方法
公开(公告)号：JP2011098865A
公开(公告)日：2011-05-19
申请号：JP2009255015
申请日：2009-11-06
申请人： Asahi Glass Co Ltd , 旭硝子株式会社
发明人： KONISHI JUNKO , KOIKE AKIO , NAKAGAWA TAKUYA , TAKADA MASAAKI
IPC分类号： C03B37/018 , C03B8/04
CPC分类号： C03B37/0142 , C03B2207/60 , Y02P40/57
摘要： PROBLEM TO BE SOLVED: To provide a method for stably manufacturing a quartz glass preform through a VAD method at a yield of at least 75%, provided the quartz glass preform has a mass of ≥50 kg or has a diameter of ≥250 mmϕ. SOLUTION: The method for manufacturing the quarts glass preform comprises a step of depositing glass fine particles on a rotating target 30, thereby growing and synthesizing a porous quartz glass body 40, provided that the glass fine particles are obtained by hydrolyzing a glass-forming raw material in oxyhydrogen flame 20 formed by a burner 10. Here, synthetic condition of the porous quartz glass body 40 is controlled so that a recessed part 42 is formed on a surface of the porous quartz glass body 40 formed on the target 30, provided that the recessed part 42 is 5-30 mm deep and is formed at a position on the porous quartz glass body 40 that nearly corresponds to a rotating axis of the target. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种通过VAD方法以至少75％的产率稳定地制造石英玻璃预制件的方法，只要石英玻璃预制件的质量≥50kg或直径≥ 250毫米。解决方案：制造石英玻璃预制棒的方法包括在旋转靶30上沉积玻璃微粒的步骤，从而生长和合成多孔石英玻璃体40，条件是玻璃微粒是通过水解玻璃由燃烧器10形成的形成在氢氧焰20中的原料。这里，控制多孔石英玻璃体40的合成条件，使得在形成在靶30上的多孔石英玻璃体40的表面上形成凹部42 只要凹部42的深度为5-30mm，并且形成在多孔石英玻璃体40上几乎对应于靶的旋转轴的位置。版权所有（C）2011，JPO＆INPIT

10. 发明专利

JP2007080944A Nonvolatile semiconductor memory element excellent in charge retention property, and its manufacturing method 有权
标题翻译：非易失性半导体存储元件在充电保持性方面的优异性及其制造方法
公开(公告)号：JP2007080944A
公开(公告)日：2007-03-29
申请号：JP2005263792
申请日：2005-09-12
申请人： Asahi Glass Co Ltd , Tohoku Univ , 国立大学法人東北大学 , 旭硝子株式会社
发明人： TAKADA MASAAKI , KOYANAGI MITSUMASA
IPC分类号： H01L21/8247 , H01L21/316 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L21/28273 , H01L21/3105 , H01L21/316 , H01L21/31645 , H01L29/42332 , H01L29/66825 , H01L29/7881
摘要： PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory element for improving insulation properties of an insulator surrounding a floating gate and reducing a ratio of oxidized metal superfine particles in the floating gate, and to provide its manufacturing method. SOLUTION: There is provided the manufacturing method of the nonvolatile semiconductor memory element composed of the floating gate consisting of a hardly oxidizable material of an element having higher Gibbs free energy of oxide formation than Si in a range of 0 to 1,200°C; and composed of an insulator surrounding the foregoing floating gate and consisting of an oxide that is an easily oxidizable material having the same energy as Si or lower than Si. In the manufacturing method, the floating gate of the hardly oxidizable material is formed with a physical method of formation, and the oxide of the easily oxidizable material is formed with a chemical method of formation. Further, heat treatment is performed after the formation of the gate insulating film by controlling a mixture ratio and temperature of a mixed gas of an oxidizing gas, and a reducing gas such that only the hardly oxidizable material is reduced and only the oxide of the easily oxidizable material is oxidized within a temperature range of 0 to 1,200°C in the mixed gas. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于提高围绕浮动栅极的绝缘体的绝缘性能并降低浮栅中的氧化金属超细颗粒的比例的非易失性半导体存储元件，并提供其制造方法。解决方案：提供了由浮置栅极构成的非易失性半导体存储元件的制造方法，所述浮栅由0到1,200℃范围内的具有比Si更高的吉布斯自由能的氧化物形成的元素的几乎可氧化的材料组成 ; 并且由围绕上述浮动栅极的绝缘体构成，并且由氧化物组成，氧化物是具有与Si相同的能量或低于Si的易氧化材料。在制造方法中，以可物理的形成方法形成难可氧化材料的浮栅，并且以化学方法形成易氧化材料的氧化物。此外，通过控制氧化性气体和还原气体的混合气体的混合比和温度，使得只有几乎可氧化的材料减少，并且仅容易地形成氧化物，则在形成栅极绝缘膜之后进行热处理可氧化材料在混合气体中在0〜1200℃的温度范围内被氧化。版权所有（C）2007，JPO＆INPIT

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