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1. 发明专利

JP2004281725A Heat treatment apparatus of semiconductor 有权
公开(公告)号：JP2004281725A
公开(公告)日：2004-10-07
申请号：JP2003071276
申请日：2003-03-17
申请人： Asahi Glass Co Ltd , 旭硝子株式会社
发明人： TAKADA MASAAKI , KAGEYAMA NOBUO , OTAGURO SUSUMU
IPC分类号： C23C16/44 , H01L21/205 , H01L21/22
摘要： PROBLEM TO BE SOLVED: To provide a heat treatment apparatus of a semiconductor satisfying the requirements of larger size, large processing quantity, prevention of particle contamination, and the like, while exhibiting excellent sealing performance in which the shape and use of an outer tube being used are not limited, and the outer tube exhibits a sufficient durability even if not supported on the inner circumference. SOLUTION: The heat treatment apparatus 60 of a semiconductor comprises an outer tube 72 of silicon carbide, a base 65 for supporting the outer tube 72 airtightly at the lower part thereof, a cover 66 capable of opening/closing the central opening of the base 65, and a furnace wall 63 surrounding the outer circumferential surface of the outer tube 72 and provided with a heater 64 on the inside. An annular sealing member 68 and an annular supporting member 92 are interposed between the outer tube 72 and the base 65 and the contact position P of the supporting member 92 and the outer tube 72 is located on the inner circumferential side of the outer circumferential end Q of the outer tube 72. COPYRIGHT: (C)2005,JPO&NCIPI

2. 发明专利

JP2004319979A Semiconductor heat treatment apparatus 有权
公开(公告)号：JP2004319979A
公开(公告)日：2004-11-11
申请号：JP2004082947
申请日：2004-03-22
申请人： Asahi Glass Co Ltd , 旭硝子株式会社
发明人： TAKADA MASAAKI , KAGEYAMA NOBUO , OTAGURO SUSUMU , NISHIHAMA JIRO
IPC分类号： C23C16/44 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor heat treatment apparatus of superior sealing characteristics for coping with the demands of enlarging of diameter, enlarging of throughput and preventing of particle contamination, etc., in which there are less restriction in a form of an outer tube to be used, etc. and in usage, and there is sufficient durability of the outer tube even without supporting at an inner periphery.
SOLUTION: A semiconductor heat treatment apparatus 60 comprises a silicon carbide outer tube 72, a base mount 65 supporting the outer tube 72 at a lower part in air-tight manner, a lid 66 openable and closable for an opening at a center part of the base mount 65, and a furnace wall 63 which surrounds an outer peripheral surface, etc. of the outer tube 72 and is provided with a heater 64 inside. An annular sealing member 68 and an annular supporting member 92 are interposed between the outer tube 72 and the base mount 65. An effective coefficient of heat transfer of the supporting member 92 is 50-2000 W/(m
2 K).
COPYRIGHT: (C)2005,JPO&NCIPI

3. 发明专利

JP2004282044A Silicon carbide outer tube and semiconductor heat treatment apparatus 有权
公开(公告)号：JP2004282044A
公开(公告)日：2004-10-07
申请号：JP2004042813
申请日：2004-02-19
申请人： Asahi Glass Co Ltd , 旭硝子株式会社
发明人： TAKADA MASAAKI , KAGEYAMA NOBUO , OTAGURO SUSUMU
IPC分类号： C23C16/44 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a silicon carbide outer tube effective for preventing particle contamination in which durability is ensured even for a large size wafer and the soaking zone can be enlarged in order to increase the processing quantity of one time, and to provide a semiconductor heat treatment apparatus using it.
SOLUTION: In the silicon carbide outer tube 72 having a closed upper part, an open lower part, a tapered part formed at the lower part to enlarge in the end part direction, and a flange part 72c provided at the outer circumference of the lower part, following relations are satisfied, (1) t
a /D
1 is 0.0067-0.025, (2) t
a× D
1 is 600-4,000 (mm
2 ), (3) (D
F2 -D
F1 )t
c /(D
1× t
a ) is 0.1-0.7, and (4) L
1 /L
2 is 1-10, where t
a is the thickness, D
1 is the inside diameter, t
c is the flange thickness, D
F1 is the inside diameter of the flange, D
F2 is the outside diameter of the flange, L
1 is the height at the tapered part, and L
2 is the extent of the tapered part.
COPYRIGHT: (C)2005,JPO&NCIPI

4. 发明专利

JPH0532458A HEAT-TREATING APPARATUS FOR SEMICONDUCTOR, HIGH-PURITY SILICON CARBIDE PART FOR SEMICONDUCTOR HEAT-TREATING APPARATUS AND ITS PRODUCTION 失效
公开(公告)号：JPH0532458A
公开(公告)日：1993-02-09
申请号：JP32521391
申请日：1991-11-13
申请人： ASAHI GLASS CO LTD , TAIHEIYO RANDAMU KK
发明人： NUMATA HIDEJI , ONO TAKUO , KAGEYAMA NOBUO , FURUKAWA KOJI , MAKIMURA RYUHEI
IPC分类号： C04B35/565 , C04B35/56 , C04B35/626 , C04B41/87 , C04B41/88 , H01L21/22
摘要： PURPOSE:To improve the product yield of heat-treated LSI, VLSI, etc., by using an SiC material having improved purity in a heat-treating apparatus for semiconductor. CONSTITUTION:Purity of alpha-SiC powder can be improved by adjusting the particle diameter of the powder to >=44mum and the average particle diameter to 2-25mum and washing the powder with mixed acid and pure water. A material produced by impregnating high-purity molten silicon in the sintered powder of the SiC has an iron content of >=5ppm.

5. 发明专利

JPS6340766A HIGH TEMPERATURE STEEL CONTACTING MEMBER 失效
公开(公告)号：JPS6340766A
公开(公告)日：1988-02-22
申请号：JP18005986
申请日：1986-08-01
申请人： ASAHI GLASS CO LTD
发明人： KAGEYAMA NOBUO , SUZUKI KEIICHIRO , FURUSE YUTAKA
IPC分类号： C21D1/00 , C04B35/56 , C04B35/565

6. 发明专利

JPH1067582A PRODUCTION OF PROTECTING TUBE FOR THERMOELECTRIC COUPLE 失效
公开(公告)号：JPH1067582A
公开(公告)日：1998-03-10
申请号：JP24412996
申请日：1996-08-27
申请人： ASAHI GLASS CO LTD
发明人： NAKAYAMA TAKAHIRO , KAGEYAMA NOBUO
IPC分类号： G01K1/08 , C04B41/52 , C04B41/53 , C04B41/85 , C04B41/88 , C04B41/91
摘要： PROBLEM TO BE SOLVED: To obtain a protecting tube for a thermoelectric couple without having an oozing out of silicon projections at the inner peripheral surface of a sintered material tube by forming a silicon nitride membrane at the inner peripheral surface of the sintered material tube formed by using a silicone carbide powder, and burned, and then impregnating a molten silicon therein. SOLUTION: This protecting tube for a thermoelectric couple 21 is obtained by (1) forming a tube closed at one end 21a thereof and opened at another end 21b by using a raw material containing a silicon carbide powder and an organic cinder, (2) burning the formed material at 1500-2000 deg.C for 30-400min to obtain a sintered material, (3) applying a silicon powder to the inner peripheral surface of the sintered tube by preferably using a method for application of pouring a slurry containing the silicon powder into the tube and then draining out, and forming a silicone nitride membrane 22 by effecting a gas containing nitrogen at 1000-1500 deg.C, (4) impregnating a molten silica to the sintered material formed with the silicon nitride membrane at the inner peripheral surface thereof at 1500-1650 deg.C, and (5) mechanically removing silicon oozing out to the outer peripheral surface of the tube and solidifying in a state of projections.

7. 发明专利

JPH09286682A PRODUCTION OF THERMOCOUPLE PROTECTING TUBE 失效
公开(公告)号：JPH09286682A
公开(公告)日：1997-11-04
申请号：JP12410196
申请日：1996-04-22
申请人： ASAHI GLASS CO LTD
发明人： NAKAYAMA TAKAHIRO , KAGEYAMA NOBUO
IPC分类号： C04B35/565 , C04B41/50 , C04B41/88
摘要： PROBLEM TO BE SOLVED: To facilitate the removal of Si protrusions by carrying out Si impregnation in a specified gaseous atmosphere when a thermocouple protecting tube is obtd. by molding a prescribed tube using a starting material contg. SIC powder and an org. binder, firing the tube, impregnating molten Si and removing exuded Si. SOLUTION: A tube with one end open and the other end closed is molded using a starting material, contg. SiC powder and an org. binder, this molded body is fired, molten Si is impregnated into the resultant sintered body and Si exuded on the inside and outside of the tube is mechanically removed to produce the objective thermocouple protecting tube. In this method, the Si impregnation is carried out in an atmosphere of pressurized gaseous N2 preferably under 1.2-10atm or in an atmosphere of a gaseous mixture of gaseous N2 with one or more kinds of O-contg. gases selected from among O2 , CO2 , NO2 , CO and NO.

8. 发明专利

JPS6385055A HIGH DENSITY ALUMINUM NITIRDE NORMAL PRESSURE SINTERED BODY 失效
公开(公告)号：JPS6385055A
公开(公告)日：1988-04-15
申请号：JP22616086
申请日：1986-09-26
申请人： ASAHI GLASS CO LTD
发明人： MIMORI TAKASHI , HAYASHI ICHIRO , SUGANO TAKASHI , KAGEYAMA NOBUO , SUZUKI KEIICHIRO
IPC分类号： C04B35/581

9. 发明专利

JPH09235163A HEAT-TREATMENT JIG AND PRODUCTION THEREOF 失效
公开(公告)号：JPH09235163A
公开(公告)日：1997-09-09
申请号：JP35618396
申请日：1996-12-24
申请人： TOKAI CARBON KK , ASAHI GLASS CO LTD
发明人： FUNATO YOSHIO , FURUKAWA KOJI , YAMAMOTO HISAO , KAGEYAMA NOBUO
IPC分类号： C04B41/85 , C04B35/565 , C04B41/87 , H01L21/22
摘要： PROBLEM TO BE SOLVED: To provide a heat-treatment jig having an excellent heat-cycle and thermal-shock resisting characteristics to be suitable for the use as a member for heat treatment in semiconductor production, and provide a method for producing the jig. SOLUTION: This jig comprises a SiC-coated silicon carbide substrate produced by forming a SiC film on a silicon-impregnated silicon carbide by CVD (chemical vapor deposition) so that no bubbles of 2μm or larger diameter are present in the substrate surface layer within 200μm from the surface of silicon carbide substrate in contact with the SiC film when observed with a 400-magnification scanning electron microscope. The method for producing the heat- treatment jig comprises introducing a raw-material compound that forms a SiC film, and forming the SiC film in a non-oxidizing atmosphere at temperature of 1000-1290 deg.C under pressure of 500-760Torr when forming the SiC film on the silicon-impregnated silicon carbide substrate by CVD.

10. 发明专利

JPH11176710A MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS 失效
公开(公告)号：JPH11176710A
公开(公告)日：1999-07-02
申请号：JP36214297
申请日：1997-12-11
申请人： ASAHI GLASS CO LTD
发明人： IRISAWA NAOSHI , KAGEYAMA NOBUO , SUZUKI SUSUMU , TAKIMOTO YASUYUKI
IPC分类号： H01L21/22 , H01L21/02 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To make the transparency for near infrared rays low by forming an Si film on at least one part of the surface of a member whose base material is SiC or SiO2 . SOLUTION: After an SiC film is formed on the surface of a carbon substrate through CVD coating, an SiC substrate is formed by removing the carbon substrate, and a member whose base material being SiC is manufactured by cutting, grinding, and further beveling this SiC substrate. On the other hand, a member whose base material being SiO2 is manufactured by a method wherein high purity SiO2 manufactured through a vapor phase process, etc., is cut, etc. In the case of the member whose base material is SiO2 , after it is molded into a desired form, sand blasting treatment, etc., is carried out to obtain an average surface roughness Ra of 0.1-5 μm at the underlying layer surface forming an Si film. At least on one part of the surface of the member whose base material being SiC or SiO2 prepared in this manner, an Si film is formed through PVD coating or CVD coating.

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