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1. 发明专利

JPH04198934A PHASE SHIFT MASK AND PRODUCTION THEREOF 失效
公开(公告)号：JPH04198934A
公开(公告)日：1992-07-20
申请号：JP32561590
申请日：1990-11-29
申请人： ASAHI GLASS CO LTD , MITSUBISHI ELECTRIC CORP
发明人： UNOKI MASAO , YOKOZUKA TOSHISUKE , YOSHIOKA NOBUYUKI , WATAKABE YAICHIRO
IPC分类号： G03F1/30 , G03F1/68 , H01L21/027 , H01L21/30
摘要： PURPOSE:To easily form a shifter pattern having a refractive index nearly equal to or lower than that of a glass substrate and high transmissivity of light for exposure by using a polymer having a fluorine-contg. alicyclic structure as a shifter material. CONSTITUTION:The shifter pattern of a phase shift mask is formed with a polymer having a fluorine-contg. alicyclic structure. Though the polymer is fluororesin, it has high transparency and high light transmissivity because it has low crystallinity or is almost noncrystalline. The polymer has a lower refractive index than the conventional hydrocarbon resin and the refractive index is nearly equal to or lower than that of glass. The polymer enables the formation of a thin film by spin coating or other method like the conventional polymer used for producing a semiconductor, a fine pattern can be formed by dry etching and superior resistance to light, moisture, weather and chemicals is ensured. A superior shifter pattern can be obtd.

2. 发明专利

JP3259730B2 X-RAY MASK 失效
公开(公告)号：JP3259730B2
公开(公告)日：2002-02-25
申请号：JP2000255614
申请日：2000-08-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： YABE HIDETAKA , MARUMOTO KENJI , YOSHIOKA NOBUYUKI
IPC分类号： G21K1/02 , G03F1/22 , H01L21/027

3. 发明专利

JP2001057338A X-RAY MASK 失效
公开(公告)号：JP2001057338A
公开(公告)日：2001-02-27
申请号：JP2000255614
申请日：2000-08-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： YABE HIDETAKA , MARUMOTO KENJI , YOSHIOKA NOBUYUKI
IPC分类号： G21K1/02 , G03F1/22 , H01L21/027 , G03F1/16
摘要： PROBLEM TO BE SOLVED: To make internal stress low and to form a highly precise pattern by using an X-ray absorber containing tungsten, nitrogen and oxygen and having an amorphous structure. SOLUTION: An X-ray absorbing film is formed on a silicon substrate by using a target of tungsten to which 1 wt.% of titanium is added, and by discharging at pressure of 10.3 mTorr and with DC discharge power of 0.5 kW. The film is annealed at 390 deg.C for 1 hour. In such an X-ray absorber, the internal stress can be reduced because of the contained tungsten, nitrogen and oxygen. Pattern size precision can be improved because the structure is not a columnar crystal structure, but is an amorphous structure. As a result, an X-ray absorber having low internal stress and suitable for forming a highly precise pattern can be obtained.

4. 发明专利

JPH11167195A METHOD FOR CLEANING PHOTOMASK AND CLEANING DEVICE 失效
公开(公告)号：JPH11167195A
公开(公告)日：1999-06-22
申请号：JP33179797
申请日：1997-12-02
申请人： MITSUBISHI ELECTRIC CORP , WATANABE M & CO LTD , ORGANO KK
发明人： NAGAMURA YOSHIKAZU , YOSHIOKA NOBUYUKI , USUI HOZUMI , YAMANAKA KOJI
IPC分类号： B08B3/08 , B08B3/12 , G03F1/26 , G03F1/32 , G03F1/82 , H01L21/027 , H01L21/304 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To provide a method for cleaning phase shift photomasks capable of effectively removing foreign matter with a high effect of removing residual sulfuric acid and foreign matter and without the fluctuation of the transmittance of the light shielding films (MoSiON films) of the photomasks. SOLUTION: This cleaning method has a first stage for cleaning the photomasks used as master disks in the photomechanical process of semiconductor production by using a liquid mixture composed of high temp. sulfuric acid and hydrogen peroxide water in order to decompose the org. matter existing on the surfaces of the photomasks and to remove the metallic impurities thereof, a second stage for removing the residual sulfuric acid remaining on the surfaces of the photomask, a third stage for removing the foreign matter sticking to the surfaces of the photomasks and a fourth stage for drying the photomasks with which the first, second and third stages end. In such a case, the second stage removes the residual sulfuric acid remaining on the surfaces of the photomasks by using anode water and the third stage removes the foreign matter by using cathode water.

5. 发明专利

JP2536558B2 失效
公开(公告)号：JP2536558B2
公开(公告)日：1996-09-18
申请号：JP28799387
申请日：1987-11-12
申请人： MITSUBISHI ELECTRIC CORP
发明人： MUKAI TAKAO , YOSHIOKA NOBUYUKI
IPC分类号： G03F1/00 , H01L21/027 , H01L21/30 , H01L21/338 , H01L29/812

6. 发明专利

JPH07168343A PHASE-SHIFT MASK AND ITS PRODUCTION 失效
公开(公告)号：JPH07168343A
公开(公告)日：1995-07-04
申请号：JP21400294
申请日：1994-09-07
申请人： DAINIPPON PRINTING CO LTD , ULVAC SEIMAKU KK , MITSUBISHI ELECTRIC CORP
发明人： TOKU AKIHIKO , KAWADA SUSUMU , YOSHIOKA NOBUYUKI
IPC分类号： G03F1/32 , G03F1/40 , G03F1/68 , H01L21/027 , G03F1/08
摘要： PURPOSE:To detect the defects of the phase-shift mask with a conventional defect inspection instrument without lowering the performance as a phase shift mask by using the phase shifter part consisting of a combination of a single- layer film and a transmission film. CONSTITUTION:In this mask, the transmission film 10 which has a prescribed transmissivity and pattern is formed on the principal surface of the quartz substrate 1 that transmits the light for exposure and consists of e.g. a molybdenum silicide film. Also, the single-layer film 4 which consists of an almost homogeneous material that shifts the phase angle of the light for exposure by 180 deg. in combination with the film 10 and has a 4 to 20% transmissivity is formed on the film 10. The single-layer film 4 consists of a molybdenum silicide oxide film or molybdenum silicide oxide nitride film, etc. The phase shifter part 20 comprises this single-layer film 4 and the transmission film 10. Thus, the dependence of the transmissivity of the phase shifter part 20 on the change in wavelength of the light to be transmitted can be reduced.

7. 发明专利

JPH06242591A PHASE SHIFT MASK AND ITS PRODUCTION 失效
公开(公告)号：JPH06242591A
公开(公告)日：1994-09-02
申请号：JP2787993
申请日：1993-02-17
申请人： MITSUBISHI ELECTRIC CORP
发明人： YOSHIOKA NOBUYUKI , KURATA NAOMI
IPC分类号： G03F1/30 , G03F1/68 , G03F1/80 , H01L21/027 , G03F1/08
摘要： PURPOSE:To provide a phase shift mask having shifter patterns capable of forming fine and intricate patterns on a wafer and the method for production thereof. CONSTITUTION:Light shielding film patterns 2 having plural interline distances l1 and l2 are formed on the surface of a transparent substrate 1. A shifter material 3a of a negative type which is sensitized with an electron beam is formed over the entire surface of the transparent substrate 1 formed with the light shielding film patterns 2. The shifter material 3a to be made to remain at the plural interline distances of the light shielding film patterns 3 is irradiated with the electron beam by setting the exposure to the shifter material 3a to be made to remain by existing at the distance 12 of the long interline distance lambda2 of the light shielding film patterns 2 larger than the exposure to the shifter material 3a to be made to remain by existing at the distance lambda1 of the short interline distance of the light shielding film patterns 2. The exposed shifter materials 3a are developed, by which the shifter patterns 3 are formed.

8. 发明专利

JPH05107744A METHOD FOR REMOVING FOREIGN MATTER OF PHOTOMASK 失效
公开(公告)号：JPH05107744A
公开(公告)日：1993-04-30
申请号：JP29989491
申请日：1991-10-18
申请人： MITSUBISHI ELECTRIC CORP
发明人： YOSHIOKA NOBUYUKI
IPC分类号： G03F1/72 , G03F1/82 , H01L21/027
摘要： PURPOSE:To completely remove foreign matter from a photomask without damaging the photomask by forming a polymer film on the photomask stuck with the foreign matter and removing this polymer film, thereby simultaneously removing the foreign matter as well. CONSTITUTION:The surface of the photomask (photomask substrate 1 and photomask patterns 2) stuck with the foreign matter 3 is spin coated with polyvinyl alcohol(PVA) and the coating is baked, by which a PVA film 4 is formed. The intermolecular force of the foreign matter 3 acts on the PVA film 4 as well and the intermolecular force between the photomask and the foreign matter 3 is conceivably relatively decreased when the film of the polymer, such as PVA, is formed to enclose the foreign matter 3. Then, the intermolecular force between the foreign matter 3 and the photomask is small and the PVA film 4 is the water-soluble polymer and, therefore, if the PVA film 4 is removed by washing with hot water, etc., the PVA film can be easily dissolved by the hot water and the foreign matter 3 is thereby removed together with the PVA film 4.

9. 发明专利

JPH0529200A MANUFACTURE OF FRESNEL ZONE PLATE FOR FOCUSING X-RAY 失效
公开(公告)号：JPH0529200A
公开(公告)日：1993-02-05
申请号：JP18627391
申请日：1991-07-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： YOSHIOKA NOBUYUKI
IPC分类号： G03F1/00 , G03F1/70 , H01L21/027
摘要： PURPOSE:To obtain a method for manufacturing a Fresnel zone plate, which has high resolution and can supply a large quantity of the plates in the method for manufacturing the plate as an X-ray lens. CONSTITUTION:When a concentrically circular pattern for transferring is formed on a photomask, a shifter pattern 11 is formed on the photomask. The pattern 11 is formed at light transmission parts disposed at every other light transmission parts disposed between the patterns. The pattern 11 is formed of a material for inverting a phase of an exposure light at 180 degrees. Since concentrically circular pattern images are so focused that the adjacent images are separated, a Fresnel zone plate having high resolution can be manufactured by a light transferring method.

10. 发明专利

JPH04335515A X-RAY EXPOSURE MASK 失效
公开(公告)号：JPH04335515A
公开(公告)日：1992-11-24
申请号：JP10707091
申请日：1991-05-13
申请人： MITSUBISHI ELECTRIC CORP
发明人： HASHIMOTO MOTOKO , YOSHIOKA NOBUYUKI , AYA ATSUSHI , MARUMOTO KENJI , YABE HIDETAKA
IPC分类号： G03F1/22 , H01L21/027
摘要： PURPOSE:To obtain a high-rigidity mask of markedly short etching time and less warp without thickening it. CONSTITUTION:In a title mask equipped with a silicon substrate 3 held by a supporter 4, an X-ray permeable film 2 formed over this silicon substrate 3, and an X-ray absorption layer pattern 1 formed over this X-ray permeable film 2, the silicon substrate 3 should be 0.01-0.2mm in thickness, and the supporter 4 higher than the silicon substrate 3 in Young modulus.

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