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1. 发明专利

JPH0582422A MANUFACTURE OF X-RAY MASK 失效
公开(公告)号：JPH0582422A
公开(公告)日：1993-04-02
申请号：JP26827591
申请日：1991-09-18
申请人： MITSUBISHI ELECTRIC CORP
发明人： YABE HIDETAKA , MATSUI YASUTSUGU , MARUMOTO KENJI , AYA ATSUSHI , HASHIMOTO MOTOKO , YOSHIOKA NOBUYUKI
IPC分类号： G03F1/22 , H01L21/027 , H01L21/30
摘要： PURPOSE:To provide a X-ray mask manufacturing method by which the X-ray blocking ability and fine working accuracy of an X-ray mask can be improved due an increase in density by raising the alignment efficiency by raising the alignment light transmissivity and preventing an X-ray absorber formed on a flat reflection preventing film from becoming a columnar structure. CONSTITUTION:This X-ray mask manufacturing process includes a process in which a flat reflection preventing film 5 is obtained by hardening a liquid by baking after the liquid is applied to the upper surface of a membrane 2 having recessing and projecting sections while the membrane 2 is rotated and another process in which a mask pattern composed of an X-ray absorber 4 is formed on the film 5. Or, this method includes a process in which a first reflection preventing film is formed by sputtering or vapor deposition on the uneven membrane 2, process in which a flat second reflection preventing film is formed by applying a liquid to the first reflection preventing film while the membrane 2 is rotated and hardening the liquid by baking, and a process in which the mask pattern is formed on the second reflection preventing film of the X-ray absorber 4.

2. 发明专利

JPH0547642A X-RAY MASK 失效
公开(公告)号：JPH0547642A
公开(公告)日：1993-02-26
申请号：JP20056491
申请日：1991-08-09
申请人： MITSUBISHI ELECTRIC CORP
发明人： MARUMOTO KENJI , AYA ATSUSHI , YABE HIDETAKA , MATSUI YASUTSUGU , HASHIMOTO MOTOKO
IPC分类号： G03F1/22 , H01L21/027
摘要： PURPOSE:To prevent influence of fluorescence by coating a diamond membrane of a silicon substrate with a light absorption thin film for absorbing a light having 300-700nm of a wavelength. CONSTITUTION:Diamond membranes 2A are deposited on both upper and lower surfaces of a silicon substrate 1. The upper membrane 2A is coated with a light absorption thin film such as a polyimide film 6 by a spin coater method, etc., an X-ray absorber 3 is then uniformly deposited by a sputtering method, etc., and then a reflection preventive film 5 is deposited. Further, it is coated with resist, patterned so as to plot a fine pattern of semiconductor, and with the resist as a mask the film 5 and the absorber 3 are dry etched. Then, the lower membrane 2A and the substrate 1 are back etched, and a supporting frame 4 is adhered to the finally remaining membrane 2A. Since fluorescence irradiated from the membrane 2A is absorbed by the film 6 at the time of exposure, an accuracy of the pattern is not affected, and an accurate exposure can be performed.

3. 发明专利

JPH05315229A X-RAY MASK 失效
公开(公告)号：JPH05315229A
公开(公告)日：1993-11-26
申请号：JP11347692
申请日：1992-05-06
申请人： MITSUBISHI ELECTRIC CORP
发明人： MARUMOTO KENJI , AYA ATSUSHI , YABE HIDETAKA , HASHIMOTO MOTOKO , MATSUI YASUTSUGU
IPC分类号： G03F1/00 , G03F1/22 , H01L21/027 , G03F1/16
摘要： PURPOSE:To provide an antireflection film with many functions such as a flattening function, a conductive function, an etching stopper function and the like by a method wherein different antireflection films are formed or antireflection films which are composed of multilayer transparent thin films are formed on both sides of an X-ray transmitting substrate. CONSTITUTION:An antireflection film 51 is an antireflection film which is formed on the opposite side at a pattern by an absorber 3 of an SiC membrane 2; it is composed of SiO2 whose refractive index is about 1.4 and whose thickness is 100nm. An antireflection film 53 is an antireflection film which is formed on the pattern formation side at the pattern by the absorber 3 of the SiC membrane 2; it is composer of an indium-tin oxide (ITO) whose refractive index is about 2 and whose thickness is 70nm. Regarding the antireflection films 51, 53 on both faces, their material and their thickness are different, but their optical thickness is nearly identical. The ITO film 53 is former by a sputtering operation or after an organometallic salt solution has been coated and baked. The SiO2 film 51 is formed by using one out of a vapor deposition method, a sputtering method and a spin-on-glass coating and baking method.

4. 发明专利

JPH05165198A PRODUCTION OF X-RAY MASK 失效
公开(公告)号：JPH05165198A
公开(公告)日：1993-06-29
申请号：JP33512091
申请日：1991-12-18
申请人： MITSUBISHI ELECTRIC CORP
发明人： MARUMOTO KENJI , AYA ATSUSHI , YABE HIDETAKA , HASHIMOTO MOTOKO , MATSUI YASUTSUGU
IPC分类号： G03F1/22 , H01L21/027
摘要： PURPOSE:To enable the etching of the thin films of a membrane material so as to simplify the process by utilizing a supporting frame as a mask and to simplify process by joining a wafer to the supporting frame before etching the thin films of the membrane material. CONSTITUTION:The thin films 2a of the membrane material are formed by a chemical vapor deposition method on both surfaces of the silicon wafer 1. The wafer 1 is then joined to the supporting frame 4. The thin film 2a of the back surface is dry etched with the supporting frame 4 as a mask to form the membrane 2. The wafer 1 is thereafter subjected to back etching and finally circuit patterns 3 are formed on the membrane 2. The joining of the supporting frame is executed before the back etching of the wafer 1 and the etching of the thin films 2a. Since the supporting frame 4 is utilized as the mask, the need for special masking for the back etching of the wafer 1 and the etching of the thin films 2a is eliminated.

5. 发明专利

JPH05315228A X-RAY MASK 失效
公开(公告)号：JPH05315228A
公开(公告)日：1993-11-26
申请号：JP11347292
申请日：1992-05-06
申请人： MITSUBISHI ELECTRIC CORP
发明人： MARUMOTO KENJI , AYA ATSUSHI , YABE HIDETAKA , HASHIMOTO MOTOKO , MATSUI YASUTSUGU
IPC分类号： G03F1/00 , G03F1/22 , H01L21/027 , G03F1/16
摘要： PURPOSE:To provide an X-ray mask wherein the film thickness of an antireflection film can be controlled easily when the film is formed by a method wherein the visible-ray transmission factor of a membrane is increased, the accuracy of an alignment operation is enhanced and the antireflection characteristic of a wide band is obtained. CONSTITUTION:An SiC film 2 is used as an X-ray transmitting substrate; an antireflection film 52 which is composed of a TiO2 film or of a mixed film of SiO2 and TiO2 and whose refractive index is within a range of 1.5 to 1.8 is provided at least on one face of the SiC film.

6. 发明专利

JPH04335515A X-RAY EXPOSURE MASK 失效
公开(公告)号：JPH04335515A
公开(公告)日：1992-11-24
申请号：JP10707091
申请日：1991-05-13
申请人： MITSUBISHI ELECTRIC CORP
发明人： HASHIMOTO MOTOKO , YOSHIOKA NOBUYUKI , AYA ATSUSHI , MARUMOTO KENJI , YABE HIDETAKA
IPC分类号： G03F1/22 , H01L21/027
摘要： PURPOSE:To obtain a high-rigidity mask of markedly short etching time and less warp without thickening it. CONSTITUTION:In a title mask equipped with a silicon substrate 3 held by a supporter 4, an X-ray permeable film 2 formed over this silicon substrate 3, and an X-ray absorption layer pattern 1 formed over this X-ray permeable film 2, the silicon substrate 3 should be 0.01-0.2mm in thickness, and the supporter 4 higher than the silicon substrate 3 in Young modulus.

7. 发明专利

JPH0613294A MANUFACTURE OF X-RAY MASK 失效
公开(公告)号：JPH0613294A
公开(公告)日：1994-01-21
申请号：JP16759392
申请日：1992-06-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： MARUMOTO KENJI , AYA ATSUSHI , HASHIMOTO MOTOKO , YABE HIDETAKA , MATSUI YASUTSUGU
IPC分类号： G03F1/22 , H01L21/027 , H01L21/306 , G03F1/16
摘要： PURPOSE:To obtain the manufacturing method of an X-ray mask wherein the end point of etching can be surely detected in a non-contact manner. CONSTITUTION:When silicon 1 is etched back by retaining etching liquid above an X-ray mask 100 retained horizontally in a process, a light is cast from above the surface of the etching liquid 20, and the end point of etching is detected by detecting the refleted light from the surface.

8. 发明专利

JPH0613293A MANUFACTURE OF X-RAY MASK 失效
公开(公告)号：JPH0613293A
公开(公告)日：1994-01-21
申请号：JP16758992
申请日：1992-06-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： MARUMOTO KENJI , YABE HIDETAKA , AYA ATSUSHI , HASHIMOTO MOTOKO , MATSUI YASUTSUGU
IPC分类号： G03F1/22 , H01L21/027 , H01L21/306 , G03F1/16
摘要： PURPOSE:To obtain a method capable of simply and surely etching back an X-ray mask in a process. CONSTITUTION:An X-ray mask 100 in a process is stacked on a soft packing 12 of a flat plane type wherein a hole is formed in the central part, in the manner in which the pattern forming side faces downward. A soft packing 12 similar to the soft packing 12 is stacked on the mask 100. Part members 13, 14 having holes are stacked on the packing 12. A recessed part formed by the soft packing 12 on the X-ray mask 100 and the part members 13, 14 having holes is filled with etching liquid 20 of silicon, thereby perfoming etching- back.

9. 发明专利

JPH05343300A 失效
公开(公告)号：JPH05343300A
公开(公告)日：1993-12-24
申请号：JP15317992
申请日：1992-06-12
申请人： MITSUBISHI ELECTRIC CORP
发明人： MARUMOTO KENJI , HASHIMOTO MOTOKO , YABE HIDETAKA , AYA ATSUSHI , MATSUI YASUTSUGU
IPC分类号： G03F1/22 , H01L21/027 , G03F1/16
摘要： PURPOSE:To obtain an X-ray mask in which a silicon wafer is connected to a supporting frame with sufficient strength and which has excellent parallelism by connecting the wafer to the frame by an adhesive layer for holding spacers of uniform sizes. CONSTITUTION:Silicon carbide (SiC) of a material of a membrane thin film 2 are formed into films on both side surface by a chemical vapor depositing method by using dichlorosilane and acetylene as materials on a silicon wafer 1. Then, a central part of the film 2 of one side is removed by etching. The wafer 1 is connected to a supporting frame 4 with an adhesive layer 5. As the adhesive of the layer 5, epoxy series is, for example, used, and silica powder having uniform particle size is mixed for spacers 6 having uniform sizes therein. Thus, an X-ray mask having sufficient strength and sufficient parallelism between the wafer and the frame is obtained.

10. 发明专利

JPH05206012A MASK FOR X-RAY EXPOSURE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH05206012A
公开(公告)日：1993-08-13
申请号：JP1082692
申请日：1992-01-24
申请人： MITSUBISHI ELECTRIC CORP
发明人： AYA ATSUSHI , MARUMOTO KENJI , YABE HIDETAKA , HASHIMOTO MOTOKO
IPC分类号： G03F1/22 , H01L21/027
摘要： PURPOSE:To obtain a mask for X-ray exposure capable of improving the accuracy of pattern position of an X-ray absorption layer while attaining the long- term reliability, by providing a silicon dioxide layer to which easily ionized material in added between a silicon substrate and a support ring. CONSTITUTION:A silicon dioxide layer 6 (Na added SiO2 layer) to which Na ion (Na ) made of easily ionized material is added is formed on the surface of a support ring 3. Next, a silicon substrate 1 is contacted with the Na+ added SiO2 layer 6 and a voltage is applied to them. Then, an SiO2 film 7 is formed on the interface between the silicon substrate 1 and the Na added SiO2 layer 6, and the silicon substrate 1 is connected to the support ring 3. Thus, a material having a great strength can be used as the support ring, and the support ring can be tightly connected to a support. Further, the accuracy of pattern position of an X-ray absorption layer can be improved while attaining the long-term reliability.

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