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1. 发明专利

JP2004111704A Manufacturing method for membrane mask and membrane mask using same 审中-公开
公开(公告)号：JP2004111704A
公开(公告)日：2004-04-08
申请号：JP2002273122
申请日：2002-09-19
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： YABE HIDETAKA , SASAKI KEI , WATANABE HIROSHI , MARUMOTO KENJI
IPC分类号： G03F1/20 , H01L21/027 , G03F1/16
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a membrane mask for simultaneously increasing precision in the dimensions of a mask pattern and precision in a transfer pattern.
SOLUTION: A diamond film, whose surface is polished, is used as the membrane of the membrane mask for circuit pattern transfer and is etched for forming a pattern. Roughness on the surface of the diamond film is 0.1 to 10 nm and manufacture is made, by using a heavy metal layer as the etching mask for etching the diamond film. Additionally, a membrane mask can be manufactured, without removing the heavy metal layer, after etching the diamond film. Furthermore, a metal film or a silicon carbide film can be used, in place of the diamond mask.
COPYRIGHT: (C)2004,JPO

2. 发明专利

JP2002287370A METHOD FOR MANUFACTURING OPTICAL ELEMENT 失效
公开(公告)号：JP2002287370A
公开(公告)日：2002-10-03
申请号：JP2001089860
申请日：2001-03-27
申请人： MITSUBISHI ELECTRIC CORP
发明人： KICHISE KOJI , YABE HIDETAKA , MARUMOTO KENJI , AYA ATSUSHI
IPC分类号： G02B5/18 , G02B1/11 , G02B1/118 , G02B3/00 , G02B3/08 , G02B5/02 , G03F7/20 , G03F7/40
摘要： PROBLEM TO BE SOLVED: To provide an optical element such as a lens for a wide wavelength range having the lens thickness which can be used for a wide wavelength range with high accuracy at a low cost. SOLUTION: The method for manufacturing an optical element 10 includes a process of preparing an optical element member 1, a process of forming a resist film 2 on at least one surface of the optical element member, a process of forming a three-dimensional resist pattern by irradiating the resist film with light 22 at wavelengths equal to or shorter than UV rays from a light source through a light absorbing body 11 having a form corresponding to the optically functional optical face, and a process of etching the optical member while using the resist pattern as a mask.

3. 发明专利

JP3259730B2 X-RAY MASK 失效
公开(公告)号：JP3259730B2
公开(公告)日：2002-02-25
申请号：JP2000255614
申请日：2000-08-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： YABE HIDETAKA , MARUMOTO KENJI , YOSHIOKA NOBUYUKI
IPC分类号： G21K1/02 , G03F1/22 , H01L21/027

4. 发明专利

JP2001143994A MEMBRANE MASK AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2001143994A
公开(公告)日：2001-05-25
申请号：JP32287699
申请日：1999-11-12
申请人： MITSUBISHI ELECTRIC CORP
发明人： KITAMURA KAEKO , MARUMOTO KENJI , KINUGAWA MASARU , YABE HIDETAKA , HIFUMI TAKASHI , FUKITA MUNEYOSHI , AYA ATSUSHI , KICHISE KOJI
IPC分类号： H01L21/027 , G03F1/22 , G03F1/16
摘要： PROBLEM TO BE SOLVED: To provide a membrane mask and its manufacturing method which has an absorber pattern formed at a high position accuracy. SOLUTION: In the membrane mask manufacturing method whereby an absorber 14 is formed on a membrane 12, a stress of a lower absorber 14a is adjusted and the thickness of the lower absorber 14a is determined according to a typical pattern size W to reduce the stress distribution in the thickness direction of the absorber 14, thereby obtaining a membrane mask having an absorber pattern formed at a high position accuracy.

5. 发明专利

JP2001057338A X-RAY MASK 失效
公开(公告)号：JP2001057338A
公开(公告)日：2001-02-27
申请号：JP2000255614
申请日：2000-08-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： YABE HIDETAKA , MARUMOTO KENJI , YOSHIOKA NOBUYUKI
IPC分类号： G21K1/02 , G03F1/22 , H01L21/027 , G03F1/16
摘要： PROBLEM TO BE SOLVED: To make internal stress low and to form a highly precise pattern by using an X-ray absorber containing tungsten, nitrogen and oxygen and having an amorphous structure. SOLUTION: An X-ray absorbing film is formed on a silicon substrate by using a target of tungsten to which 1 wt.% of titanium is added, and by discharging at pressure of 10.3 mTorr and with DC discharge power of 0.5 kW. The film is annealed at 390 deg.C for 1 hour. In such an X-ray absorber, the internal stress can be reduced because of the contained tungsten, nitrogen and oxygen. Pattern size precision can be improved because the structure is not a columnar crystal structure, but is an amorphous structure. As a result, an X-ray absorber having low internal stress and suitable for forming a highly precise pattern can be obtained.

6. 发明专利

JPH097916A MANUFACTURE OF X-RAY MASK AND SPIN COATING AS WELL AS MANUFACTURING DEVICE OF X-RAY MASK 失效
公开(公告)号：JPH097916A
公开(公告)日：1997-01-10
申请号：JP15023295
申请日：1995-06-16
申请人： MITSUBISHI ELECTRIC CORP
发明人： AYA ATSUSHI , KICHISE KOJI , YABE HIDETAKA , MARUMOTO KENJI
IPC分类号： G03F7/16 , G03F1/22 , H01L21/027 , G03F1/16
摘要： PURPOSE: To provide a manufacturing method of an X-ray mask allowing uniformity of the film quality of a thin film to be formed on a silicon substrate. CONSTITUTION: For the purpose of manufacturing an X-ray mask, in a film- making process by sputtering or the like, a silicon substrate 1 is fixed to the substrate supporting surface 101 of a film-making device through a heat- insulating both-sided tape 104 in order to unify heat radiation from the silicon substrate 1 so as to unify a film quality.

7. 发明专利

JPH0627603B2 失效
公开(公告)号：JPH0627603B2
公开(公告)日：1994-04-13
申请号：JP2540486
申请日：1986-02-07
申请人： MITSUBISHI ELECTRIC CORP
发明人： KOTO SATORU , MARUMOTO KENJI , SESHIMO YUTAKA , YAMANAKA GORO
IPC分类号： A47F3/04 , F25D11/00 , F25D17/04 , F25D17/08

8. 发明专利

JPH05315228A X-RAY MASK 失效
公开(公告)号：JPH05315228A
公开(公告)日：1993-11-26
申请号：JP11347292
申请日：1992-05-06
申请人： MITSUBISHI ELECTRIC CORP
发明人： MARUMOTO KENJI , AYA ATSUSHI , YABE HIDETAKA , HASHIMOTO MOTOKO , MATSUI YASUTSUGU
IPC分类号： G03F1/00 , G03F1/22 , H01L21/027 , G03F1/16
摘要： PURPOSE:To provide an X-ray mask wherein the film thickness of an antireflection film can be controlled easily when the film is formed by a method wherein the visible-ray transmission factor of a membrane is increased, the accuracy of an alignment operation is enhanced and the antireflection characteristic of a wide band is obtained. CONSTITUTION:An SiC film 2 is used as an X-ray transmitting substrate; an antireflection film 52 which is composed of a TiO2 film or of a mixed film of SiO2 and TiO2 and whose refractive index is within a range of 1.5 to 1.8 is provided at least on one face of the SiC film.

9. 发明专利

JPH04335515A X-RAY EXPOSURE MASK 失效
公开(公告)号：JPH04335515A
公开(公告)日：1992-11-24
申请号：JP10707091
申请日：1991-05-13
申请人： MITSUBISHI ELECTRIC CORP
发明人： HASHIMOTO MOTOKO , YOSHIOKA NOBUYUKI , AYA ATSUSHI , MARUMOTO KENJI , YABE HIDETAKA
IPC分类号： G03F1/22 , H01L21/027
摘要： PURPOSE:To obtain a high-rigidity mask of markedly short etching time and less warp without thickening it. CONSTITUTION:In a title mask equipped with a silicon substrate 3 held by a supporter 4, an X-ray permeable film 2 formed over this silicon substrate 3, and an X-ray absorption layer pattern 1 formed over this X-ray permeable film 2, the silicon substrate 3 should be 0.01-0.2mm in thickness, and the supporter 4 higher than the silicon substrate 3 in Young modulus.

10. 发明专利

JPH02233177A COATING APPARATUS 失效
公开(公告)号：JPH02233177A
公开(公告)日：1990-09-14
申请号：JP5387889
申请日：1989-03-08
申请人： MITSUBISHI ELECTRIC CORP
发明人： MARUMOTO KENJI , AYA ATSUSHI
IPC分类号： B05C11/08 , G03F7/16 , H01L21/027 , H01L21/30
摘要： PURPOSE:To effectively control a film thickness even with respect to an object to be coated having no uniform surface state by mounting a phase detection means constituted so that monochromatic light is allowed to be incident to the surface of the object to be coated and the intensity of the reflected light from said object is detected to be applied to a control part performing the control of a coating condition on the basis of the detected intensity of the reflected light to detect a rotary phase. CONSTITUTION:When the part A having no pattern 12 on a wafer 1 becomes the irradiation spot of a laser 10, the light from a light source 20 passes through the part of the slit 23 of a disc 22 to be detected by a photodetector 21. A control part 6 triggers the pulse signal emitted from the photodetector 21 at a cycle once per one rotation to read the voltage signal from a reflected light intensity detector 11. By this method, since the control part 6 obtains smooth output voltage, the control of a coating condition is performed on the basis of said voltage.

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