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1. 发明专利

JP2001048649A SILICON CARBIDE AND ITS PRODUCTION 失效
公开(公告)号：JP2001048649A
公开(公告)日：2001-02-20
申请号：JP21792499
申请日：1999-07-30
申请人： ASAHI GLASS CO LTD
发明人： KAMISUKE YOICHI , MIYAGAWA NAOMICHI , KIKUKAWA SHINYA , SUZUKI KATSUYOSHI , ENOMOTO AKIHIRO
IPC分类号： C04B35/565 , C01B31/36 , C04B35/573 , C23C16/01 , C23C16/32 , C23C16/42 , C30B25/02 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To obtain high purity and highly corrosion resistant silicon carbide by specifying the peak intensity ratio in the X-ray powder method to be not less than a specified value and controlling the specific resistance to be a particular value. SOLUTION: This silicon carbide has a peak intensity ratio Id1/Id2 of not less than 0.005, wherein the Id1 is the intensity of the peak when 2θ is about 34 deg. and the Id2 is the intensity of the peak when 2θ is about 36 deg., and a specific resistance of 103 to 106 Ω.cm. The silicon carbide is obtained by forming β-type silicon carbide on the surface of a base body by a CVD method and then removing the base body and heat treating the obtained β-type silicon carbide at 1,500 to 2,300 deg.C. Phase transition from the β-type to α-type in the silicon carbide is controlled to obtain the silicon carbide having a desired specific resistance and low specific resistance dispersion by the heat treatment mentioned above. It is preferable that the heat treatment is carried out at a pressure of 0.1 to 2.0 atm (absolute pressure) under an inert atmosphere such as argon or helium for 5 to 10 h and the heated silicon carbide is cooled at a cooling rate of 5 to 10 deg.C/min. In the case the silicon carbide is used as a member of a plasma treatment device, it exhibits durability to gaseous plasma while hardly containing semiconductor wafers.

2. 发明专利

JP2001007082A ELECTRODE PLATE FOR PLASMA ETCHING 失效
公开(公告)号：JP2001007082A
公开(公告)日：2001-01-12
申请号：JP17181199
申请日：1999-06-18
申请人： ASAHI GLASS CO LTD
发明人： KAMISUKE YOICHI , ENOMOTO AKIHIRO , TAKADA MASAAKI
IPC分类号： H01L21/302 , C04B35/565 , C23F4/00 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide an electrode plate for plasma etchings, where the quantity of its wastage is small to make usable it over a long term and the generation of particles is reduced, by making specific the value of its opened porosity, and by forming it out of a silicon carbide sintered body having the main crystal structure of α-SiC of 6H-type. SOLUTION: The value of the opened porosity of an electrode plate for plasma etchings is 10-40% and is made of a silicon carbide sintered body, having a main crystal structure of 6H-type of α-SiC. The silicon carbide having the main crystal structure of 6H-type of α-SiC is used by the reason that 6H-type of α-SiC is especially superior in its plasma resistance. With the existence of the opened porosity, the base body of the electrode plate is made lightweight to improve its easy usability, and its many holes are prevented from clogging due to the reaction products of the plasma etching. The value of the opened porosity is 10-40%, preferably 15-30%. When the value of the opened porosity is very much smaller than 10%, the porous effect of the electrode plate is reduced, and its inner impurities are hard to be removed from it sufficiently, when cleaning it. When the value of the opened porosity is very much larger than 40%, the mechanical strength of the electrode plate becomes low for a base material, and its plasma resistance is also reduced.

3. 发明专利

JP2001206771A SiC JIG AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2001206771A
公开(公告)日：2001-07-31
申请号：JP2000013036
申请日：2000-01-21
申请人： ASAHI GLASS CO LTD
发明人： KAMISUKE YOICHI , ENOMOTO AKIHIRO
IPC分类号： C04B35/565
摘要： PROBLEM TO BE SOLVED: To provide a SiC jig which is high in purity and has no faults such as cracks and in which a SiC coating film layer has satisfactory adhesive strength even if no surface of the SiC coating film layer is roughed by abrasive grains like sandblasting and to provide a method for manufacturing the SiC jig. SOLUTION: A particle layer consisting mainly of inorganic particles having 0.1-10 μm average particle diameter is formed on the surface of a substrate, and the SiC coating film layer having 0.5-50 μm arithmetically average surface roughness Ra and 20-200 μm thickness is formed on the particle layer by the CVD method.

4. 发明专利

JP2001048667A JOINING METHOD FOR CERAMIC PARTS 失效
公开(公告)号：JP2001048667A
公开(公告)日：2001-02-20
申请号：JP22900199
申请日：1999-08-13
申请人： ASAHI GLASS CO LTD
发明人： KAMISUKE YOICHI , ENOMOTO AKIHIRO , IRISAWA NAOSHI
IPC分类号： C04B35/10 , C04B35/185 , C04B35/48 , C04B35/573 , C04B35/581 , C04B35/584 , C04B37/00 , C04B37/02 , C23C16/42
摘要： PROBLEM TO BE SOLVED: To obtain high strength capable of enduring under a high temp. environment with a simple operation even in the case of a complex form by forming an SiC fixing coating layer on the surface of plural ceramic parts, which are arranged so that the desired parts to be jointed are put close to each other by a chemical vapor growth method. SOLUTION: An SiC(CVD-SiC) fixing coating layer 23 is formed on the surface of a combined body 20 of ceramic parts, which are arranged in such a manner that the parts are brought into contact to each other by a chemical vapor growth method. Thereby, a high hardness shell of high hardness SiC coating is formed on the whole outer surface of the combined body 20 and the combined body 20 present at the inside of the shell is completely fixed by the outer shell and a combined body 30 having high strength as a whole is formed. It is preferable to arrange the ceramic parts so that a gap (d) is formed between the ceramic parts and to fill the gap with the CVD-SiC. Thereby, the gap (d) between the ceramic parts is completely filled with the high hardness CVD-SiC and the joining strength between the joined parts is more improved.

5. 发明专利

JP2000133605A JIG FOR SEMICONDUCTOR HEAT TREATMENT 失效
公开(公告)号：JP2000133605A
公开(公告)日：2000-05-12
申请号：JP31986398
申请日：1998-10-26
申请人： ASAHI GLASS CO LTD
发明人： IKUTA YORISUKE , KAMISUKE YOICHI , KIKUKAWA SHINYA
IPC分类号： H01L21/673 , C04B41/89 , H01L21/22 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To prevent a crack in a quartz material film and the peeling of the quartz material film even though the fully thick quartz material film is formed by relaxing a thermal stress, which is generated by a difference between the thermal expansion coefficients of both of a quartz material layer and a silicon carbide material layer, by a method wherein a composite layer consisting of both of the quartz material layer and the silicon carbide material layer is formed between the quartz material film and a silicon carbide material. SOLUTION: In the case where a quartz material film is formed on the surface of a silicon carbide material, a composite layer consisting of a quartz material layer and a silicon carbide material layer is formed between the quartz material film and the silicon carbide material. The composite layer is a mixed layer of a silicon carbide layer with a quartz layer and preferably, a silicon carbide sintered body is formed into islands structure, wherein quartz exists in this silicon carbide sintered body as a dispersion phase in a matrix (continuous phase). By making such a composite dispersion phase interpose between the quartz material film and the silicon carbide material, the enhancement of the adhesion of the quartz material film and the silicon carbide material due to a relaxation of a thermal stress between the quartz material layer and the silicon carbide material layer, a shut-off of impurity diffusion due to the existence of the composite dispersion phase itself and moreover, the formation of a thicker quartz material film are made possible.

6. 发明专利

JP2001220237A SILICON CARBIDE BODY AND METHOD FOR PRODUCING THE SAME 失效
公开(公告)号：JP2001220237A
公开(公告)日：2001-08-14
申请号：JP2000035529
申请日：2000-02-14
申请人： ASAHI GLASS CO LTD
发明人： KAMISUKE YOICHI , MIYAGAWA NAOMICHI , KIKUKAWA SHINYA
IPC分类号： C04B35/565
摘要： PROBLEM TO BE SOLVED: To obtain a silicon carbide body having a low resistivity, high density, high purity and high corrosion resistance, suitable as a member for producing a semiconductor. SOLUTION: This silicon carbide body is a silicon carbide body produced by a CVD method, has 0.1-100 ppm content of nitrogen element, >=10 ppm content of metal element except silicon and 0.01-10 Ω.cm resistivity.

7. 发明专利

JP2001073139A PRODUCTION OF SILICON CARBIDE MOLDED BODY 失效
公开(公告)号：JP2001073139A
公开(公告)日：2001-03-21
申请号：JP25249099
申请日：1999-09-07
申请人： ASAHI GLASS CO LTD
发明人： KAMISUKE YOICHI , IRISAWA NAOSHI
IPC分类号： C23C16/01
摘要： PROBLEM TO BE SOLVED: To obtain a CVD-SiC molded body free from warpage and cracking by forming a silicon carbide layer on a substrate of a porous silicon carbide sintered body having a surface layer of a carbon layer or a silicon layer by a CVD method, thereafter removing the surface layer and separating the substrate. SOLUTION: A substrate 10 is composed of a material same as that of a CVD-SiC molded body 20 whose thermal expansion coefficient is almost equal to that of the one. The whole of the surface of the substrate 10 is, e.g. coated with a slurrylike carbon adhesive composed of high purity carbon powder, which is dried to form a surface layer 15 of carbon. Next, it is set to a vacuum CVD furnace, SiCl4 and CH4 are used as a gaseous starting material, H2 is used as carrier gas, and the molded body 20 is formed under the conditions, e.g. of 100 Torr×1300 deg.C×15 hr. Successively, the outer circumference thereof is ground till the substrate 10 is exposed. Moreover, it is charged to an oxygen atmosphere of 1200 deg.C and is let to alone, and the surface layer 15 is baked away to remove, by which the substrate 10 and the molded body 20 can easily be separated.

8. 发明专利

JP2000327459A SILICON CARBIDE JIG FOR LOW PRESSURE CVD AND ITS PRODUCTION 失效
公开(公告)号：JP2000327459A
公开(公告)日：2000-11-28
申请号：JP14619899
申请日：1999-05-26
申请人： ASAHI GLASS CO LTD
发明人： KAMISUKE YOICHI , IRISAWA NAOSHI
IPC分类号： H01L21/31 , C04B41/52 , C04B41/87 , C23C16/42
摘要： PROBLEM TO BE SOLVED: To effectively prevent the stripping of CVD-film without treatment for roughening the surface by an abrasive by controlling the thickness and average surface roughness of a SiC coating to be in each specified range, while SiC coating is coated on a SiC-impregnated SiC jig using a low pressure CVD device in the semiconductor production process. SOLUTION: The thickness of the SiC coating is 20 to 150 μm, preferably 40 to 70 μm, and the average surface roughness Ra is 1.5 to 5.0 μm, further preferably, the maximum surface roughness Rmax is 2.0 to 3.0 μm. The SiC jig A is obtained by coating a CVD-SiC coating film 2 onto the surface of a SiC-impregnated SiC base material 1, and the adhesion of the coating film 2 to a CVD-film 4 such as Si3N4 which is formed on the coating film 2 is improved due to the surface roughness (unevenness) of the coating film 2. In the process for forming the SiC coating film 2 on the surface of the SiC-impregnated SiC base material, it is preferable that the SiC coating film 2 is formed by introducing source compounds for forming the SiC coating film into a low pressure CVD device and coating at 1,000 to 1,270 deg.C and 20 to 300 Torr in a non-oxidizing atmosphere.

9. 发明专利

JP2000256855A SEMICONDUCTOR PRODUCING DEVICE MEMBER 失效
公开(公告)号：JP2000256855A
公开(公告)日：2000-09-19
申请号：JP6551799
申请日：1999-03-11
申请人： ASAHI GLASS CO LTD
发明人： ENOMOTO AKIHIRO , KAMISUKE YOICHI
IPC分类号： H01L21/205 , C23C16/32
摘要： PROBLEM TO BE SOLVED: To make excellent the corrosion resistance to strong acids such as hydrofluoric acid and nitric acid and to suppress the generation of particle contamination by controlling the particle size of silicon carbide particles forming a CVD film and the average surface roughness of a base material before the formation of the CVD film to specified ranges. SOLUTION: The particle size of >=80% of the particles of silicon carbide forming a CVD film is controlled to

10. 发明专利

JPH10120466A HIGHLY CORROSION-RESISTANT SILICEOUS CARBIDE MEMBER AND ITS USE 失效
公开(公告)号：JPH10120466A
公开(公告)日：1998-05-12
申请号：JP24458297
申请日：1997-08-26
申请人： ASAHI GLASS CO LTD
发明人： NAKAYAMA TAKAHIRO , KAGEYAMA NOBUO , TAKENAKA ATSUYOSHI , KAMISUKE YOICHI
IPC分类号： C04B35/565 , H01L21/302 , H01L21/3065 , H01L21/68 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To obtain a highly corrosion-resistant siliceous carbide member capable of standing cleaning with hydrofluoric acid, nitric acid, etc., by specifying contents of Fe, Al and Ca in a sintered compact having an α-type siliceous carbide content in an amount equal to or larger than a specific amount. SOLUTION: This siliceous carbide member comprises a sintered compact having >=90wt.% α-type siliceous carbide content and has =2,100 deg.C.

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