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1. 发明专利

JPH07300677A FILM FORMATION AND APPARATUS THEREFOR BY PHOTO-CVD 失效
公开(公告)号：JPH07300677A
公开(公告)日：1995-11-14
申请号：JP10053592
申请日：1992-03-26
申请人： AGENCY IND SCIENCE TECHN , ASAHI GLASS CO LTD , ISUZU CERAMICS RES INST , NTN TOYO BEARING CO LTD , NIPPON SEIKO KK
发明人： SHIKADA YORIO , KIKUCHI KAORU , HASHIZUME KENICHI , MITSUI AKIRA , OTSUKA YOSHIRO , TANIGUCHI MASAHIKO , NAKANISHI KIYOSHI , IWASAKI MIKA , ITO HIROYUKI , SAITO TAKESHI , TAKAHASHI KUNIHIKO
IPC分类号： C23C16/48 , H01L21/205
摘要： PURPOSE:To efficiently form thin films by accelerating vapor phase precipitation reaction by a photochemical reaction by light energy and forming the thin films on a substrate at a low temp. CONSTITUTION:This apparatus is provided with a plasma generating chamber 18 for supplying reactive gases formed by plasma excitation onto the substrate 17 of a reaction chamber 15 separately from this reaction chamber 15. Reactive gases are supplied from a reactive gas supplying system 13 onto the substrate 17 and are put into an active state by the reaction with the radicals, etc., activated in the plasma generating chamber 14. The excitation by the photochemical reaction necessary for film formation is then efficiently effected by irradiation with a laser by an excimer laser irradiation system 11, by which the thin films are formed on the substrate 17 at a low temp. As a result, an improvement in the efficient decomposition efficiency of the reactive gases at room temp., high-speed formation of the films, improvement in film quality, control of reaction products, etc., are attained.

2. 发明专利

JP2011082178A Method for forming transparent electrode 审中-公开
标题翻译：形成透明电极的方法
公开(公告)号：JP2011082178A
公开(公告)日：2011-04-21
申请号：JP2010249019
申请日：2010-11-05
申请人： Asahi Glass Co Ltd , 旭硝子株式会社
发明人： MITSUI AKIRA , ODAKA HIDEFUMI , YONEMORI SHIGEAKI , AKAO YASUHIKO
IPC分类号： H01B13/00 , C01G19/02 , C03C17/245 , C23C14/08 , C23C14/34 , G02F1/1343 , H01B5/14 , H01J9/02 , H01L31/18
CPC分类号： C03C17/245 , C03C2217/231 , C03C2218/154 , C03C2218/328 , C03C2218/33 , G02F1/13439 , H01J9/02 , H01J2217/04 , H01L31/1884 , Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a transparent electrode, including a tin oxide film capable of being easily patterned and realized at low cost and having a low resistance and excelling transparency.
SOLUTION: The method of manufacturing the transparent electrode on the substrate of which the patterned tin oxide film is formed includes a step of forming a SnO
2 -x film (0.3≤x≤1.95) on a substrate; a step of removing a part of the SnO
2 -x film and patterning it; and a step of turning the patterned SnO
2 -x film into the tin oxide film, by heat treatment, or the method includes a step for forming a tin oxide film whose film density is 6.5 g/cm
3 or less on the substrate; a step of removing a part of the tin oxide film whose film density is 6.5 g/cm
3 or less and patterning it; and a step of turning the patterned tin oxide film whose film density is 6.5 g/cm
3 or less into a tin oxide film by heat treatment.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种制造透明电极的方法，其包括能够以低成本容易地图案化和实现的具有低电阻和优异透明度的氧化锡膜。＆lt; P＆gt;解决方案：在其上形成图案化氧化锡膜的基板上制造透明电极的方法包括以下步骤：将SnO 2 SBS-x薄膜（0.3≤x≤1.95）形成在底物; 去除部分SnO 2 SB薄膜并使其图案化的步骤; 以及通过热处理将图案化SnO 2 SBS-2膜转变成氧化锡膜的步骤，或者该方法包括形成膜密度为6.5g / cm 3的氧化锡膜的步骤， SP> 3 以下; 除去膜密度为6.5g / cm 3以上的氧化锡膜的一部分，使其图案化的工序; 以及通过热处理将膜密度为6.5g / cm 3以上的图案化氧化锡膜转印到氧化锡膜中的工序。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2009205799A Transparent conductive film, method of manufacturing the same, and sputtering target used for its manufacture 审中-公开
标题翻译：透明导电膜，其制造方法和用于其制造的溅射靶
公开(公告)号：JP2009205799A
公开(公告)日：2009-09-10
申请号：JP2006157515
申请日：2006-06-06
申请人： Asahi Glass Co Ltd , 旭硝子株式会社
发明人： ODAKA HIDEFUMI , MITSUI AKIRA
IPC分类号： H01B5/14 , C04B35/457 , C23C14/08 , C23C14/34 , G02F1/1343 , H01B13/00
CPC分类号： C01G19/00 , C23C14/086 , C23C14/3414 , G02F1/13439
摘要： PROBLEM TO BE SOLVED: To provide a transparent conductive film having a high resistance to corrosion by glass frit and suppressing the increase of its electric resistance when baked in contact with glass frit, and to provide a method of manufacturing the same. SOLUTION: The transparent conductive film having tin oxide as the principal component contains, as a dopant, at least one element selected from a group of tungsten, tantalum, niobium, molybdenum and bismuth and is virtually free from antimony and indium. The transparent conductive film satisfies following expressions (1) 0.8 COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种玻璃料耐腐蚀性高的透明导电膜，并且与玻璃料接触时抑制其电阻增加，并提供其制造方法。解决方案：以氧化锡为主要成分的透明导电膜含有选自钨，钽，铌，钼和铋中的至少一种元素作为掺杂剂，实际上不含锑和铟。透明导电膜满足以下表达式（1）0.8 <（Sn）/（Sn + MA）<1.0，（2）0.01 <（MA）/（Sn + MA）<0.2，其中MA是所含元素的总量作为透明导电膜中的掺杂剂，Sn是透明导电膜中含有的锡元素的量。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2002241931A SPUTTERING TARGET AND PRODUCTION METHOD FOR THE TARGET 失效
公开(公告)号：JP2002241931A
公开(公告)日：2002-08-28
申请号：JP2001037550
申请日：2001-02-14
申请人： ASAHI GLASS CO LTD
发明人： MITSUI AKIRA
IPC分类号： C23C14/34
摘要： PROBLEM TO BE SOLVED: To provide a sputtering target which can stably be discharged by DC sputtering, and can deposit a film essentially consisting of cobalt oxide, and a production method therefor. SOLUTION: The sputtering target contains metallic cobalt and cobalt monoxide. The total amount of the metals including metallic cobalt is 15 to 30 to the total weight of the sputtering target.

5. 发明专利

JP2002012964A TRANSPARENT ELECTROCONDUCTIVE FILM, ITS MANUFACTURING METHOD, AND SPUTTERING TARGET 失效
公开(公告)号：JP2002012964A
公开(公告)日：2002-01-15
申请号：JP3813397
申请日：1997-02-21
申请人： ASAHI GLASS CO LTD
发明人： MITSUI AKIRA
IPC分类号： C01G19/00 , C23C14/08 , C23C14/34 , H01B5/14
摘要： PROBLEM TO BE SOLVED: To prepare a stannic-oxide based, transparent electroconductive film with low resistance and high excoriation resistance, to provide its manufacturing method, and a sputtering target. SOLUTION: The stannic-oxide based, transparent electroconductive film containing gallium and indium, includes gallium of 0.1-30 mol% as Ga2O3 and indium of 0.1-30 mol% as In2O3 against the total volume of Ga2O3, In2O3, and SnO2, and a manufacturing method, and a sputtering target are also provided.

6. 发明专利

JP2001015787A SUBSTRATE WITH TRANSPARENT CONDUCTIVE FILM, MANUFACTURING METHOD THEREFOR, AND SOLAR BATTERY 失效
公开(公告)号：JP2001015787A
公开(公告)日：2001-01-19
申请号：JP2000109804
申请日：2000-04-11
申请人： ASAHI GLASS CO LTD
发明人： MITSUI AKIRA , SATO KAZUO
IPC分类号： H01L21/205 , H01L21/203 , H01L31/04
摘要： PROBLEM TO BE SOLVED: To manufacture a substrate with a transparent conductive film, having an uneven surface structure that can be manufactured using a sputtering method and is rich in productivity by laminating a zinc-oxide system transparent conductive film which is in contact with a titanium oxide film formed on a substrate. SOLUTION: A titanium oxide film is nearly a flat film without special, large uneven structures. The titanium oxide film affects the crystal growth of the zinc-oxide system transparent conductive film laminated on it, hence crystal growth is accelerated, and a zinc oxide crystal of large crystal grains is grown. The surface of the zinc-oxide system transparent conductive film becomes uneven due to the crystal grains. The crystal is orientated nearly vertical with respect to the substrate surface, and the crystal orientation is aligned, thus obtaining a recess and projection in nearly aligned shape. The zinc-oxide system transparent conductive film has roof-shaped uneven shape and is suited for the surface electrode of a solar battery and has high optical confinement effect. As a result, reliability of a solar cell using the substrate with the zinc-oxide system transparent conductive film is improved.

7. 发明专利

JP2000206314A SUBSTRATE WITH SHIELDING LAYER, COLOR FILTER SUBSTRATE, DISPLAY ELEMENT, TARGET FOR FORMING SUBSTRATE WITH SHIELDING LAYER AND MANUFACTURE OF SUBSTRATE WITH SHIELDING LAYER 失效
公开(公告)号：JP2000206314A
公开(公告)日：2000-07-28
申请号：JP455999
申请日：1999-01-11
申请人： ASAHI GLASS CO LTD , HITACHI METALS LTD
发明人： SHIROYAMA ATSUSHI , AKAO YASUHIKO , AOSHIMA ARINORI , MITSUI AKIRA , TAKAGI SATORU , KUBOI TAKESHI , UENO TOMONORI
IPC分类号： G09F9/00 , C23C14/34 , C23C14/35 , G02B5/00 , G02B5/20
摘要： PROBLEM TO BE SOLVED: To provide a substrate with shielding layer, excellent in an optical characteristic nearly equal to a conventional chrome film and durability, and friendly to environment. SOLUTION: This substrate with shielding layer, having, on a substrate 1, at least one layer of a shielding layer 2 and a low reflecting layer, comprising a metal and/or a metal compound mainly composed of nickel(Ni) and tantalum(Ta) and having the composition of Ta of 15-40%, preferably 20-40%, against the sum total of Ni and Ta, in the atomic ratio, can be used in a display element (for example, a liquid crystal display element) or the like as a substrate with shielding layer capable of solving a problem, and excellent in an optical characteristic and durability, and friendly to environment. Especially, such a structure that plural layers of the low reflecting layer 3 and the shielding layer 2 having the composition are formed in due order on the substrate 1 is preferable.

8. 发明专利

JPH08158048A TARGET AND ITS PRODUCTION AND FORMATION OF FILM HIGH IN REFRACTIVE INDEX 失效
公开(公告)号：JPH08158048A
公开(公告)日：1996-06-18
申请号：JP11876395
申请日：1995-05-17
申请人： ASAHI GLASS CO LTD
发明人： KIDA OTOJIRO , MITSUI AKIRA
IPC分类号： C23C14/08 , C23C4/10 , C23C4/18 , C23C14/34
摘要： PURPOSE: To form in high speed and in high dense a thin film high in refractive index by using a target in which an undercoat specified in a rate of thermal expansion is formed on a surface of a metallic base material roughened its surface and a ceramic layer comprising mainly of TiO is formed thereon. CONSTITUTION: The surface of the metallic base material is roughened by a sand-blast, etc. The undercoat consisting of a metal or an alloy is formed on the surface of the base material and a sputtering target is formed by providing a ceramic layer thereon. The undercoat is a layer having a rate of thermal expansion which is intermediate of that of the ceramic layer and that of the metallic base material and/or having the rate of thermal expansion which is near that of the ceramic layer. The film thickness of the undercoat is an order of 30-100μm preferably. The ceramic layer is a layer comprising mainly of TiOx (1

9. 发明专利

JPH08111123A TRANSPARENT CONDUCTIVE FILM, PRODUCING METHOD THEREOF AND SPUTTERING TERGET 失效
公开(公告)号：JPH08111123A
公开(公告)日：1996-04-30
申请号：JP20815895
申请日：1995-08-15
申请人： ASAHI GLASS CO LTD
发明人： MITSUI AKIRA , SATO KAZUO , MIYAZAKI MASAMI , EBISAWA JUNICHI , HAYASHI YASUO , HIGETA MASAO , AIKAWA KATSUAKI , HAYASHI ATSUSHI
IPC分类号： C01G9/00 , C23C14/34 , H01B5/14 , H01B13/00 , H01L21/203 , H01L21/285
摘要： PURPOSE: To stabilize the film properties at the time of film formation and improve the humidity resistance with no need of controlling water remaining in vacuum by containing a specified mole % of silicon (in the equivalent of SiO2 ) in a zinc oxide-based transparent conductive film containing gallium and silicon. CONSTITUTION: The content of silicon of a zinc oxide-based transparent conductive film containing gallium and silicon is set to be 0.01-1.5 mole % in conversion into SiO2 . In the case the mole % is less than 0.01, the film is easily affected by water and the specific resistance of the film alters. Meanwhile, in the case the mole % exceeds 1.5, the specific resistance of the film becomes high and at the same time the specific resistance alters easily. Also the content of gallium in the film is preferably set to be 0.2-8.0 mole % in conversion into Ga2 O3 . To produce the film, though any method may be applicable, a sputtering method is especially preferable.

10. 发明专利

JPH07233469A TARGET, ITS PRODUCTION AND PRODUCTION OF HIGH-REFRACTIVE-INDEX FILM 失效
公开(公告)号：JPH07233469A
公开(公告)日：1995-09-05
申请号：JP2442094
申请日：1994-02-22
申请人： ASAHI GLASS CO LTD
发明人： MITSUI AKIRA , OYAMA TAKUJI , SASAKI KENICHI
IPC分类号： C04B35/46 , C23C14/08 , C23C14/34
摘要： PURPOSE:To produce a highly productive oxide sintered compact for a sputtering target having a low resistivity and a high content of oxygen by hot-pressing titanium dioxide powder in a nonoxidizing atmosphere and sintering the compact. CONSTITUTION:The powder of titanium dioxide having 0.05-40mum grain diameter is hot-pressed at 1000-1300 deg.C and 50-100kg/cm in a nonoxidizing atmosphere of Ar, etc., to obtain an oxide sintered compact consisting essentially of TiOx (1 =35wt.% oxygen is formed from the sintered compact. A metal oxide other than TiOx is incorporated, as required, into the target by

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