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    • 1. 发明专利
    • Method for forming transparent electrode
    • 形成透明电极的方法
    • JP2011082178A
    • 2011-04-21
    • JP2010249019
    • 2010-11-05
    • Asahi Glass Co Ltd旭硝子株式会社
    • MITSUI AKIRAODAKA HIDEFUMIYONEMORI SHIGEAKIAKAO YASUHIKO
    • H01B13/00C01G19/02C03C17/245C23C14/08C23C14/34G02F1/1343H01B5/14H01J9/02H01L31/18
    • C03C17/245C03C2217/231C03C2218/154C03C2218/328C03C2218/33G02F1/13439H01J9/02H01J2217/04H01L31/1884Y02E10/50
    • PROBLEM TO BE SOLVED: To provide a method of manufacturing a transparent electrode, including a tin oxide film capable of being easily patterned and realized at low cost and having a low resistance and excelling transparency.
      SOLUTION: The method of manufacturing the transparent electrode on the substrate of which the patterned tin oxide film is formed includes a step of forming a SnO
      2 -x film (0.3≤x≤1.95) on a substrate; a step of removing a part of the SnO
      2 -x film and patterning it; and a step of turning the patterned SnO
      2 -x film into the tin oxide film, by heat treatment, or the method includes a step for forming a tin oxide film whose film density is 6.5 g/cm
      3 or less on the substrate; a step of removing a part of the tin oxide film whose film density is 6.5 g/cm
      3 or less and patterning it; and a step of turning the patterned tin oxide film whose film density is 6.5 g/cm
      3 or less into a tin oxide film by heat treatment.
      COPYRIGHT: (C)2011,JPO&INPIT
    • 解决的问题:提供一种制造透明电极的方法,其包括能够以低成本容易地图案化和实现的具有低电阻和优异透明度的氧化锡膜。 < P>解决方案:在其上形成图案化氧化锡膜的基板上制造透明电极的方法包括以下步骤:将SnO 2 SBS-x薄膜(0.3≤x≤1.95)形成在 底物; 去除部分SnO 2 SB薄膜并使其图案化的步骤; 以及通过热处理将图案化SnO 2 SBS-2膜转变成氧化锡膜的步骤,或者该方法包括形成膜密度为6.5g / cm 3的氧化锡膜的步骤, SP> 3 以下; 除去膜密度为6.5g / cm 3以上的氧化锡膜的一部分,使其图案化的工序; 以及通过热处理将膜密度为6.5g / cm 3以上的图案化氧化锡膜转印到氧化锡膜中的工序。 版权所有(C)2011,JPO&INPIT