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1. 发明专利

JP2013115275A Substrate processing apparatus 有权
标题翻译：基板加工设备
公开(公告)号：JP2013115275A
公开(公告)日：2013-06-10
申请号：JP2011260937
申请日：2011-11-29
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： YAMAMOTO TETSUO , KATO TSUTOMU , OKADA ITARU , TAKEBAYASHI YUJI
IPC分类号： H01L21/31 , C23C16/44
CPC分类号： H01L21/0228 , H01L21/02189 , H01L21/02225 , H01L21/67017 , H01L21/67109 , H01L27/108 , H01L28/40
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which increases the conductance of an exhaust system to achieve low pressure while preventing or inhibiting the increase of a footprint of the apparatus.SOLUTION: A substrate processing apparatus has: a processing container 203 where multiple substrates 200 are housed so as to be stacked and aligned; process gas supply means 232a, 232b, 249a, 249b which supply a process gas processing the substrates 200 to the processing container 203; and exhausting means 300 exhausting air in the processing container 203. The exhausting means 300 includes: a vacuum pump 246; and an exhaust pipe connecting the processing container 203 with the vacuum pump 246. At least a part of the exhaust pipe has a rib structure 370, and the exhaust pipe is formed by pipes 331 to 333, each of which has a rectangular cross section viewed in a direction perpendicular to the exhaust direction.
摘要翻译：要解决的问题：提供一种基板处理装置，其提高排气系统的电导以实现低压，同时防止或抑制装置的占地面积的增加。解决方案：基板处理设备具有：多个基板200被容纳以堆叠和排列的处理容器203; 处理气体供给装置232a，232b，249a，249b，其将处理气体提供给处理容器203; 排气装置300排出处理容器203中的空气。排气装置300包括：真空泵246; 以及将处理容器203与真空泵246连接的排气管。排气管的至少一部分具有肋结构370，排气管由管331〜333形成，其中每个具有矩形截面，在垂直于排气方向的方向上。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2011222677A Substrate processing apparatus 审中-公开
标题翻译：基板加工设备
公开(公告)号：JP2011222677A
公开(公告)日：2011-11-04
申请号：JP2010088955
申请日：2010-04-07
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： TAKEBAYASHI YUJI , SAITO TATSUYUKI , YAMAMOTO TETSUO , KATO TSUTOMU , OKADA ITARU
IPC分类号： H01L21/31 , C23C16/458 , H01L21/22
摘要： PROBLEM TO BE SOLVED: To improve quality of treatment and yield by preventing difference of flow rate from increasing between a processing surface and a rim of a substrate and thereby improving uniformity of deposition processing.SOLUTION: A substrate processing apparatus has a substrate holder 18 for holding a substrate 200, a reaction tube 205 which houses the substrate and the substrate holder, gas supply systems 233a, 233b, 240a and 240b which supply processing gas in a direction parallel with the surface to be processed of the substrate, and an exhaust system 231 which exhausts the atmosphere in the reaction tube. The substrate holder has a plurality of columns 113, and a flow straightening member which is placed on the column, is an annular member for mounting the substrate, and has a notch formed in a part thereof. A distance between a circumference of the flow straightening member and an inner wall face of the reaction tube is shorter than a distance between the column and the inner wall face of the reaction tube.
摘要翻译：要解决的问题：通过防止流速与基板的加工表面和边缘之间的增加的差异来提高处理质量和产量，从而提高沉积处理的均匀性。解决方案：基板处理装置具有用于保持基板200的基板保持件18，容纳基板和基板保持件的反应管205，供给系统233a，233b，240a和240b，沿着方向与基板的被处理面平行的排气系统231，其排出反应管内的气氛。衬底保持器具有多个列113，并且放置在柱上的流动矫正构件是用于安装衬底的环形构件，并且在其一部分中形成有切口。流动矫直构件的圆周与反应管的内壁面之间的距离比反应管的内壁面和内壁面的距离短。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2011187536A Substrate processing device 审中-公开
标题翻译：基板处理装置
公开(公告)号：JP2011187536A
公开(公告)日：2011-09-22
申请号：JP2010048971
申请日：2010-03-05
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： YAMAMOTO TETSUO
IPC分类号： H01L21/31 , C23C16/42 , C23C16/455
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing device increasing plasma excitation efficiency of a processing gas passing between electrodes to increase a film-deposition speed in the substrate processing device having at least a pair of electrodes.
SOLUTION: The substrate processing device is configured as follows. That is, it includes a processing chamber 203 laminating and containing a plurality of substrates to process the plurality of substrates, a processing gas supply part supplying the processing gas into the processing chamber, and at least the pair of electrodes 269, 270 disposed in the processing chamber and generating a plasma for exciting the processing gas supplied from the processing gas supply part by application of a power. The pair of electrodes are respectively disposed at different distances from the center position of the substrate.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种提高通过电极之间的处理气体的等离子体激发效率的基板处理装置，以增加具有至少一对电极的基板处理装置中的成膜速度。解决方案：基板处理装置如下构成。也就是说，它包括一个处理室203，该处理室203层叠并容纳多个基板以处理多个基板;处理气体供应部分，将处理气体供应到处理室中;至少一对电极269,270设置在并且通过施加电力产生用于激励从处理气体供应部分供应的处理气体的等离子体。该对电极分别设置在与基板的中心位置不同的距离处。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2009267359A Substrate processing apparatus 有权
标题翻译：基板加工设备
公开(公告)号：JP2009267359A
公开(公告)日：2009-11-12
申请号：JP2009011769
申请日：2009-01-22
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： KONYA TADASHI , YAMAMOTO TETSUO , SHIMA NOBUHITO , ISHIMARU NOBUO
IPC分类号： H01L21/31 , C23C16/505
CPC分类号： C23C16/345 , C23C16/452 , C23C16/45542 , C23C16/45544
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of making an electrode hard to shrink and of making uniform the quality of a substrate to be processed. SOLUTION: The substrate processing apparatus includes a processing chamber 201 for processing a wafer 200, gas supply pipes 232a, 232b for supplying a processing gas into the processing chamber, a gas exhaust pipe 231 for exhausting the atmospheric gas in the processing chamber, and a first electrode 269 and a second electrode 270 to which high-frequency power is applied in order to bring the processing gas into an active state. The first electrode 269 and the second electrode 270 include a core wire made of metal and a plurality of short pipes linked to one another through the core wire so as to be bendable and the thermal deformation of which is less than that of the core wire. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供能够使电极难以收缩并使待处理的基板的质量均匀的基板处理装置。解决方案：基板处理设备包括用于处理晶片200的处理室201，用于将处理气体供应到处理室中的气体供给管232a，232b，用于排出处理室中的大气气体的排气管231 以及施加高频电力以使处理气体进入活性状态的第一电极269和第二电极270。第一电极269和第二电极270包括由金属制成的芯线和通过芯线彼此连接的多个短管，以便可弯曲并且其热变形小于芯线的热变形。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2007042703A Substrate treatment equipment 审中-公开
标题翻译：基板处理设备
公开(公告)号：JP2007042703A
公开(公告)日：2007-02-15
申请号：JP2005222459
申请日：2005-08-01
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： YAMAMOTO TETSUO
IPC分类号： H01L21/673 , H01L21/02 , H01L21/31 , H01L21/324
摘要： PROBLEM TO BE SOLVED: To surely and effectively deelectrify a wafer by performing deelectrification by not only an air flow which carries ions but also a cassette stage. SOLUTION: The substrate treatment equipment comprises a treatment chamber wherein a substrate is treated, transfer means for transferring the substrate inside the equipment, placement 4 to place a substrate transfer container 3 wherein the substrate carried in from outside the equipment is mounted, clean air supply means 14 for supplying clean air to the substrate transfer container placed on the placement, and ion producing means 16 which is located on the upper stream side of a clean air flow 15 from the clean air supply means than the placement portion. The placement has a contact unit 5 in contact with the substrate transfer container, and the contact has a volume resistivity of 10 16 (Ω cm) or less. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：通过不仅带有离子的空气流而且通过进行磁带级的除电，可以有效地对晶片进行除电。基板处理设备包括其中处理基板的处理室，用于在设备内部传送基板的转移装置，放置4以放置其中从设备外部承载的基板安装的基板转移容器3，清洁空气供给装置14，用于向放置在基座上的基板转移容器提供清洁空气;以及离子产生装置16，该清洁空气供应装置16位于清洁空气供应装置的清洁空气流15的上游侧比放置部分。该放置具有与衬底转移容器接触的接触单元5，并且该接触体积电阻率为10 16Ω（Ωcm）或更小。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2004193238A Semiconductor manufacturing device 有权
公开(公告)号：JP2004193238A
公开(公告)日：2004-07-08
申请号：JP2002357620
申请日：2002-12-10
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： YAMAMOTO TETSUO
IPC分类号： H01L21/02
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing device capable of reducing a running cost by controlling the amount of hot exhaust gas based on the inside temperature of the semiconductor manufacturing device or an information on a recipe.
SOLUTION: The semiconductor manufacturing device 16 is provided with a temperature sensor 32, a hot exhaust gas damper 34 capable of changing the amount Q1 of hot exhaust gas, and a controller 44 capable of controlling the hot exhaust gas damper 34. The hot exhaust gas damper 34 is driven by the controller 44 based on the measured temperature of the temperature sensor 32 or the recipe information 42 such as a heater temperature or the like which is written in the recipe so that the hot exhaust gas duct 20 is opened to pass the minimum amount, in which the optimum hot exhaust gas amount Q1 is obtained.
COPYRIGHT: (C)2004,JPO&NCIPI

7. 发明专利

JP2013093618A Substrate processing apparatus, manufacturing method of semiconductor device and electrode 有权
标题翻译：基板加工装置，半导体器件和电极的制造方法
公开(公告)号：JP2013093618A
公开(公告)日：2013-05-16
申请号：JP2013020673
申请日：2013-02-05
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： KONYA TADASHI , YAMAMOTO TETSUO , SHIMA NOBUHITO , ISHIMARU NOBUO
IPC分类号： H01L21/31 , C23C16/505
摘要： PROBLEM TO BE SOLVED: To make the quality of a substrate to be processed uniform by making an electrode less likely to shrink.SOLUTION: The substrate processing apparatus includes a processing chamber for housing substrates, a gas supply unit for supplying process gas into the processing chamber, a pair of electrodes to which a high frequency power is applied in order to bring the process gas into active state, and a housing tube for housing the pair of electrodes, respectively, in a state where they are bent in at least one place. The electrode has a core wire composed of a metal, a plurality of tube bodies coupled by the core wire so as to be foldable, and a braided member composed of a metal and provided to cover the plurality of tube bodies.
摘要翻译：要解决的问题：通过使电极不太可能收缩，使基板的质量被加工均匀。解决方案：基板处理装置包括用于容纳基板的处理室，用于将处理气体供应到处理室中的气体供应单元，施加高频功率的一对电极，以使处理气体进入活动状态，以及用于在至少一个位置弯曲的状态下分别容纳该对电极的收容管。电极具有由金属构成的芯线，由芯线联结成可折叠的多个管体，以及由金属构成并设置成覆盖多个管体的编织部件。版权所有（C）2013，JPO＆INPIT

8. 发明专利

JP2006269595A Substrate treatment equipment 有权
标题翻译：基板处理设备
公开(公告)号：JP2006269595A
公开(公告)日：2006-10-05
申请号：JP2005083405
申请日：2005-03-23
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： TOYODA KAZUYUKI , MIYA HIRONOBU , YAMAMOTO TETSUO
IPC分类号： H01L21/31 , C23C16/455
摘要： PROBLEM TO BE SOLVED: To provide substrate treatment equipment in which the impact of a film deposition gas on the rotary shaft or bearing of a vacuum pump can be prevented or suppressed while ensuring an ultimate vacuum.
SOLUTION: The substrate treatment equipment comprises a treatment chamber for containing a substrate, a means for supplying a desired film deposition gas into the treatment chamber, and vacuum pumps 2 and 3 each discharging an atmosphere in the treatment chamber. At least during the film deposition process where a plurality of kinds of film deposition gas are supplied and discharged alternately to and from the each discharging chamber without being mixed in the treatment chamber, the quantity of an inert gas supplied to the rotary shafts 17 and 18 of the vacuum pumps 2 and 3 is increased as compared with that in the other process where the film deposition gas is not used.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供可以在确保最终真空的同时防止或抑制成膜气体对真空泵的旋转轴或轴承的冲击的基板处理设备。解决方案：基板处理设备包括用于容纳基板的处理室，用于将期望的成膜气体供应到处理室中的装置，以及每个排出处理室中的气氛的真空泵2和3。至少在不在处理室中混合多个成膜气体并且从各个排出室交替排出的成膜气体的成膜处理中，供给到旋转轴17,18的惰性气体的量与没有使用成膜气体的其他工序相比，真空泵2和3的功率增加。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2014146805A Substrate processing device, substrate processing method, and method for manufacturing semiconductor device 有权
标题翻译：基板处理装置，基板处理方法和制造半导体装置的方法
公开(公告)号：JP2014146805A
公开(公告)日：2014-08-14
申请号：JP2014035189
申请日：2014-02-26
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： YAMAMOTO TETSUO , MATSUMOTO NAOKI , HONDA KOICHI
IPC分类号： H01L21/31 , C23C16/452 , C23C16/50 , C23C16/52 , H01L21/318
摘要： PROBLEM TO BE SOLVED: To improve substrate processing productivity by reducing the cost of substrate processing which uses plasma.SOLUTION: A substrate processing device comprises: a processing chamber which processes a substrate; a first plasma generating chamber provided in the processing chamber; first reactive gas supply means for supplying a first reactive gas into the first plasma generating chamber; a pair of first discharge electrodes which generates plasma in the first plasma generating chamber and generates an active species of the first reactive gas by exciting the first reactive gas; a first gas port which is provided on a sidewall of the first plasma generating chamber and jets the active specifies of the first reactive gas to the substrate; a second plasma generating chamber provided in the processing chamber; second reactive gas supply means for supplying a second reactive gas into the second plasma generating chamber; a pair of second discharge electrodes which generates plasma in the second plasma generating chamber and generates an active species of the second reactive gas by exciting the second reactive gas; and a second gas port which is provided on a sidewall of the second plasma generating chamber and jets the active specifies of the second reactive gas to the substrate.
摘要翻译：要解决的问题：通过降低使用等离子体的基板处理的成本来提高基板处理生产率。解决方案：基板处理装置包括：处理基板的处理室; 设置在处理室中的第一等离子体产生室; 第一反应气体供应装置，用于将第一反应气体供应到所述第一等离子体产生室中; 一对第一放电电极，其在第一等离子体产生室中产生等离子体，并通过激发第一反应气体产生第一反应气体的活性物质; 第一气体端口，其设置在第一等离子体产生室的侧壁上，并将第一反应气体的活性指定给基板; 设置在处理室中的第二等离子体产生室; 第二反应气体供应装置，用于将第二反应气体供应到所述第二等离子体产生室中; 一对第二放电电极，其在第二等离子体发生室中产生等离子体，并通过激发第二反应气体产生第二反应气体的活性物质; 以及第二气体端口，其设置在第二等离子体产生室的侧壁上，并将第二反应气体的活性指定给基板。

10. 发明专利

JP2008294138A Substrate treatment device 审中-公开
标题翻译：基板处理装置
公开(公告)号：JP2008294138A
公开(公告)日：2008-12-04
申请号：JP2007136741
申请日：2007-05-23
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： YAMAMOTO TETSUO , NAKAGAWA TAKASHI
IPC分类号： H01L21/31 , C23C16/44 , C23C16/455 , C23C16/54
摘要： PROBLEM TO BE SOLVED: To provide a substrate treatment device capable of suppressing harmful effects to substrate treatment by a back-streaming gas from an exhaust line to a treatment chamber to ensure satisfactory substrate treatment.
SOLUTION: The substrate treatment device 1 comprises the treatment chamber 201, an O
3 generation device 300 for generating the O
3 gas, a first gas supply pipe 232a used to supply the O
3 gas generated by the O
3 generation device 300, the exhaust line 302 branched from the first gas supply pipe 232a and used to exhaust the O
3 gas, a valve V2 provided to the first supply line 232a, a check valve 304 provided to the exhaust line 302, a pressure switch 306 for measuring the pressure at an upstream side in the exhaust direction than the check valve 304, a pressure gauge 310 at a downstream side in the exhaust direction than the check valve 304, and a controller 280 for interrupting or halting the substrate treatment when a differential pressure between the detected value of the pressure switch 306 and the detected value of the pressure gauge 310 exceeds the threshold value.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种能够抑制从排气管到处理室的回流气体对基板处理的有害影响的基板处理装置，以确保令人满意的基板处理。解决方案：基板处理装置1包括处理室201，用于产生O 3 SB 3气体的O 3 SB 3生成装置300，使用第一气体供给管232a 为了提供由O 3 产生装置300产生的O SB 3气体，从第一气体供给管232a分支并用于排出O 3气体，设置在第一供应管线232a上的阀V2，设置在排气管302上的止回阀304，用于测量排气方向上游侧的压力的压力开关306，该压力开关306比止回阀304 ，排气方向下游侧的压力计310和止回阀304，以及控制器280，用于当压力开关306的检测值与检测到的压力值之间的压力差时中断或停止基板处理量规310超过阈值。版权所有（C）2009，JPO＆INPIT

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