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1. 发明专利

JP2015035593A 半導体装置および半導体装置の作製方法审中-公开
标题翻译：半导体器件和半导体器件制造方法
公开(公告)号：JP2015035593A
公开(公告)日：2015-02-19
申请号：JP2014136434
申请日：2014-07-02
申请人：株式会社半導体エネルギー研究所 , Semiconductor Energy Lab Co Ltd
发明人： TANAKA TETSUHIRO , INOUE TAKAYUKI , YAMAMOTO YOSHITAKA , SUZAWA HIDEOMI , MORIWAKA YOSHIE
IPC分类号： H01L29/786 , H01L21/336 , H01L21/8238 , H01L21/8242 , H01L27/08 , H01L27/092 , H01L27/108
CPC分类号： H01L29/4234 , H01L29/4908 , H01L29/7869 , H01L29/78696
摘要：【課題】しきい値を制御する半導体装置を提供する。また、微細化に伴い顕著となる電気特性の低下を抑制できる構成の半導体装置を提供する。【解決手段】第1の半導体膜と、第1の半導体膜に電気的に接するソース電極およびドレイン電極と、ゲート絶縁膜と、ゲート絶縁膜に接するゲート電極と、を有し、ゲート絶縁膜は、第1の絶縁膜とトラップ膜と、を有する構成とし、第1の絶縁膜とトラップ膜との界面またはトラップ膜内部の電荷捕獲準位に電荷を捕獲させる。【選択図】図1
摘要翻译：要解决的问题：提供控制阈值的半导体器件; 并且提供能够抑制电特性劣化的半导体器件，其特别是与微细加工相关联地出现。解决方案：半导体器件包括：第一半导体膜; 与第一半导体膜电接触的源电极和漏电极; 栅极绝缘膜; 以及与栅极绝缘膜接触的栅电极。栅极绝缘膜包括第一绝缘膜和陷阱膜，并且在第一绝缘膜和陷阱膜之间或捕获膜内部的边界面处的电荷陷阱水平被捕获。

2. 发明专利

JP2014199905A 半導体装置および半導体装置の作製方法有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2014199905A
公开(公告)日：2014-10-23
申请号：JP2013211070
申请日：2013-10-08
申请人：株式会社半導体エネルギー研究所 , Semiconductor Energy Lab Co Ltd
发明人： TEZUKA YOSHIAKI , TANAKA TETSUHIRO , TAKEUCHI TOSHIHIKO , SUZAWA HIDEOMI , HONDO SUGURU
IPC分类号： H01L29/786 , H01L21/28 , H01L21/336 , H01L21/8234 , H01L27/088
CPC分类号： H01L29/7869 , H01L21/28185 , H01L21/28194 , H01L21/823462 , H01L21/823857 , H01L29/1054 , H01L29/42384 , H01L29/4908 , H01L29/66765 , H01L29/66969 , H01L29/78
摘要：【課題】酸化物半導体を用いた微細な半導体装置において、安定した電気特性を付与し、信頼性を向上させる。該半導体装置を作製する。【解決手段】下地絶縁層と、下地絶縁層上の酸化物半導体層を含む酸化物積層と、酸化物積層上のソース電極層およびドレイン電極層と、酸化物積層、ソース電極層およびドレイン電極層上のゲート絶縁層と、ゲート絶縁層上のゲート電極層と、ゲート電極層上の層間絶縁層と、を有する半導体装置において、酸化物半導体層中の欠陥密度を低減する。【選択図】図1
摘要翻译：要解决的问题：为了制造使用能够赋予稳定的电特性并提高可靠性的氧化物半导体的精细的半导体器件。解决方案：一种半导体器件，包括：基底绝缘层; 设置在所述基底绝缘层上并且包括氧化物半导体层的氧化物层叠体; 设置在所述氧化物层叠体上的源电极层和漏电极层; 设置在所述氧化物层叠体上的栅极绝缘层，所述源极电极层和所述漏极电极层; 栅极电极层，设置在所述栅极绝缘层上; 以及设置在栅电极层上的层间绝缘层。在半导体器件中，氧化物半导体层中的缺陷密度降低。

3. 发明专利

JP2014082390A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2014082390A
公开(公告)日：2014-05-08
申请号：JP2012230365
申请日：2012-10-17
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： YAMAZAKI SHUNPEI , SUZAWA HIDEOMI , SASAGAWA SHINYA , TANAKA TETSUHIRO
IPC分类号： H01L29/786 , H01L21/28 , H01L21/316 , H01L21/318 , H01L21/336 , H01L21/365 , H01L21/8234 , H01L21/8242 , H01L21/8247 , H01L27/08 , H01L27/088 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/417 , H01L29/788 , H01L29/792
CPC分类号： H01L21/02565 , H01L21/02617 , H01L21/02631 , H01L27/1156 , H01L29/26 , H01L29/66969 , H01L29/78 , H01L29/7869 , H01L29/78693 , H01L29/78696
摘要： PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device using an oxide semiconductor by inhibiting variation in electrical characteristics of the semiconductor device.SOLUTION: In a semiconductor device, by supplying oxygen to a base insulation layer arranged under an oxide semiconductor layer and a gate insulation layer arranged above the oxide semiconductor layer to a channel formation region, possible oxygen deficiency to be formed in a channel region is compensated. In addition, by inhibiting oxygen abstraction from the oxide semiconductor layer by a source electrode layer or a drain electrode layer near the channel region formed in the oxide semiconductor layer, oxygen deficiency in the channel region is inhibited. Further, by forming a protective insulation layer functioning as a barrier layer which has a low hydrogen content and a low oxygen permeability on the gate electrode layer, oxygen desorption from the gate insulation layer and/or the base insulation layer is inhibited thereby to effectively supply oxygen to the channel formation region.
摘要翻译：要解决的问题：通过抑制半导体器件的电特性的变化来提供使用氧化物半导体的高度可靠的半导体器件。解决方案：在半导体器件中，通过向布置在氧化物半导体层下方的基极绝缘层供给氧，并且栅极绝缘层布置在氧化物半导体层上方到沟道形成区域，补偿了在沟道区域中形成的可能的氧缺陷。此外，通过在氧化物半导体层中形成的沟道区附近的源电极层或漏电极层抑制氧化物半导体层的吸氧，抑制沟道区域的缺氧。此外，通过在栅极电极层上形成用作阻挡层的保护绝缘层，其具有低的氢含量和低的透氧性，因此抑制了从栅极绝缘层和/或基底绝缘层的氧解吸，从而有效地提供氧气通道形成区域。

4. 发明专利

JP2014042005A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2014042005A
公开(公告)日：2014-03-06
申请号：JP2013146063
申请日：2013-07-12
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： YAMAZAKI SHUNPEI , TANAKA TETSUHIRO , IEDA YOSHINORI , MIYAMOTO TOSHIYUKI , NOMURA MASASHI , HAMOCHI TAKASHI , OKAZAKI KENICHI , ICHIJO MITSUHIRO , ENDO TOSHIYA
IPC分类号： H01L21/336 , H01L21/8234 , H01L21/8238 , H01L27/088 , H01L27/092 , H01L29/786
CPC分类号： H01L27/1207 , H01L27/0688 , H01L27/088 , H01L27/1225
摘要： PROBLEM TO BE SOLVED: To provide an insulation film which can inhibit diffusion of hydrogen to an oxide semiconductor film in a transistor using the oxide semiconductor; and provide a semiconductor device which uses a transistor using a silicon semiconductor and a transistor using an oxide semiconductor and which has good electrical characteristics.SOLUTION: In a semiconductor device, two nitride insulation films having different functions from each other are provided between a transistor using a silicon semiconductor and a transistor using an oxide semiconductor. In particular, a first hydrogen-containing nitride insulation film is provided on the transistor using the silicon semiconductor and a second nitride insulation film which has a content of hydrogen lower than that of the first nitride insulation film and functions as a barrier film against hydrogen is provided between the first nitride insulation film and the transistor using the oxide semiconductor.
摘要翻译：要解决的问题：提供一种能够抑制氢氧化物半导体膜中的氧化物半导体膜扩散的绝缘膜，该晶体管使用氧化物半导体; 并且提供使用硅半导体的晶体管和使用氧化物半导体的晶体管并且具有良好的电特性的半导体器件。解决方案：在半导体器件中，在使用不同功能的两个氮化物绝缘膜之间提供两个不同的功能硅半导体和使用氧化物半导体的晶体管。特别地，使用硅半导体的晶体管上设置第一含氢氮化物绝缘膜，并且具有低于第一氮化物绝缘膜的氢含量的第二氮化物绝缘膜，并且用作抵抗氢的阻挡膜设置在第一氮化物绝缘膜和使用氧化物半导体的晶体管之间。

5. 发明专利

JP2013128106A Insulating film, formation method thereof, semiconductor device, and manufacturing method thereof 有权
标题翻译：绝缘膜，其形成方法，半导体器件及其制造方法
公开(公告)号：JP2013128106A
公开(公告)日：2013-06-27
申请号：JP2012251389
申请日：2012-11-15
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： TANAKA TETSUHIRO , TAKAHASHI ERIKA , IMOTO YUKI , SATO YUHEI
IPC分类号： H01L21/316 , C23C14/08 , H01L21/336 , H01L29/786
CPC分类号： H01L29/7869 , H01L21/02189 , H01L21/02194 , H01L21/02266 , H01L29/66742 , H01L29/66969 , H01L29/78603 , Y10T428/24628
摘要： PROBLEM TO BE SOLVED: To provide an insulating film capable of releasing oxygen or a method for forming the same, and to provide a semiconductor device having excellent electrical characteristics or a method for manufacturing the same.SOLUTION: An amorphous region with low density is formed in an oxide insulating film containing zirconium. The amount of oxygen released from such an oxide insulating film containing zirconium by heating is large and a temperature at which oxygen is released is higher in the oxide insulating film than in a conventional oxide film (e.g., a silicon oxide film). When the insulating film is formed using a sputtering target containing zirconium in an oxygen atmosphere, the temperature of a surface on which the insulating film is formed may be controlled to be lower than a temperature at which a film to be formed starts to crystallize.
摘要翻译：要解决的问题：提供能够释放氧的绝缘膜或其形成方法，并提供具有优异电特性的半导体器件或其制造方法。解决方案：在含锆的氧化物绝缘膜中形成具有低密度的非晶区域。通过加热从含氧锆的氧化物绝缘膜释放出的氧量比氧化物绝缘膜（例如，氧化硅膜）的氧化物绝缘膜的释放温度高。当在氧气氛中使用含有锆的溅射靶形成绝缘膜时，可以将形成有绝缘膜的表面的温度控制为低于待形成的膜开始结晶的温度。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2012182447A Semiconductor film manufacturing method and semiconductor device manufacturing method 有权
标题翻译：半导体薄膜制造方法和半导体器件制造方法
公开(公告)号：JP2012182447A
公开(公告)日：2012-09-20
申请号：JP2012025693
申请日：2012-02-09
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： TANAKA TETSUHIRO , TOKUMARU RYO , OTSUKI TAKASHI , TAJIMA RYOTA , KATO ERIKA
IPC分类号： H01L21/205 , C23C16/24 , C23C16/455 , G02F1/1368 , H01L21/336 , H01L29/786
CPC分类号： H01L29/66765 , H01L21/02422 , H01L21/02532 , H01L21/0262 , H01L29/04 , H01L29/78648 , H01L29/78696
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a microcrystalline semiconductor film having high crystallinity at high productivity, and to provide a manufacturing method of a semiconductor device having excellent electrical characteristics at high productivity using the microcrystalline semiconductor film.SOLUTION: By using a plasma CVD apparatus provided with a first electrode and a second electrode in a reaction chamber, a microcrystalline semiconductor film is formed on a substrate by supplying high-frequency power to the first electrode to generate plasma in the reaction chamber after supplying a sedimentary gas and hydrogen to the reaction chamber including the substrate arranged between the first electrode and the second electrode. In a region where the plasma is generated, a plasma density in a region overlapping an end part of the substrate is set higher than a plasma density in a region inside the region overlapping the end part of the substrate, and the microcrystalline semiconductor film is formed in the region inside the end part of the substrate. Further, a semiconductor device is manufactured by using the above-described microcrystalline semiconductor film manufacturing method.
摘要翻译：要解决的问题：提供一种以高生产率获得高结晶度的微晶半导体膜的制造方法，并且提供使用该微晶半导体膜以高生产率具有优异的电特性的半导体器件的制造方法。解决方案：通过在反应室中使用设置有第一电极和第二电极的等离子体CVD装置，通过向第一电极提供高频电力以在反应中产生等离子体，在基板上形成微晶半导体膜在向包括布置在第一电极和第二电极之间的衬底的反应室供应沉积气体和氢气之后，在产生等离子体的区域中，与衬底的端部重叠的区域中的等离子体密度设定为高于与衬底的端部重叠的区域内的等离子体密度，形成微晶半导体膜在衬底的端部内的区域中。此外，通过使用上述微晶半导体膜制造方法制造半导体器件。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2005026358A Nitriding equipment, semiconductor device, and its formation method 有权
标题翻译：硝基化设备，半导体器件及其形成方法
公开(公告)号：JP2005026358A
公开(公告)日：2005-01-27
申请号：JP2003188465
申请日：2003-06-30
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： YAMAZAKI SHUNPEI , YAMAGUCHI TETSUJI , FURUNO MAKOTO , JINBO YASUHIRO , TANAKA TETSUHIRO
IPC分类号： G02F1/1345 , G02F1/1368 , H01L21/31 , H01L21/318 , H01L21/336 , H01L29/786 , H01L51/50 , H05B33/10 , H05B33/14
摘要： PROBLEM TO BE SOLVED: To thin the gate insulating film of a TFT in order to form the TFT to submicron order of at most 1 μm and to drive a circuit containing the TFT at more high speed with high precision.
SOLUTION: In the forming method of the TFT, after forming the gate insulating film whose film thickness is comparatively thin, irradiation of microwave is performed to introduced nitrogen gas, nitrogen plasma is generated under ambient pressure of inert atmosphere, and a surface of the gate insulating film is nitrided. Nitriding plasma treatment is performed all over a substrate by passing the substrate in the lower part of a plasma generating means 107.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了使TFT的栅极绝缘膜变薄以形成至多1μm的亚微米级，并且以更高的精度驱动包含TFT的电路。解决方案：在TFT的形成方法中，在形成膜厚相对较薄的栅绝缘膜之后，进行微波照射以引入氮气，在惰性气氛的环境压力下产生氮等离子体，的栅极绝缘膜被氮化。通过使基板在等离子体产生装置107的下部通过，在整个基板上进行氮化等离子体处理。版权所有：（C）2005，JPO＆NCIPI

8. 发明专利

JP2015035591A 半導体装置および半導体装置の作製方法有权
标题翻译：半导体器件和半导体器件制造方法
公开(公告)号：JP2015035591A
公开(公告)日：2015-02-19
申请号：JP2014135815
申请日：2014-07-01
申请人：株式会社半導体エネルギー研究所 , Semiconductor Energy Lab Co Ltd
发明人： TANAKA TETSUHIRO , TAKEUCHI TOSHIHIKO , YAMANE YASUMASA , INOUE TAKAYUKI , YAMAZAKI SHUNPEI
IPC分类号： H01L29/786 , H01L21/28 , H01L21/336 , H01L21/8234 , H01L21/8238 , H01L21/8242 , H01L21/8247 , H01L27/088 , H01L27/092 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/788 , H01L29/792
CPC分类号： H01L29/66969 , H01L29/4908 , H01L29/7869 , H01L29/78696
摘要：【課題】しきい値電圧を制御する半導体装置の作製方法を提供する。【解決手段】第1の半導体と、第1の半導体に電気的に接する電極と、ゲート電極と、ゲート電極と第1の半導体との間に設けられる電子捕獲層と、を有する半導体装置において、125℃以上450℃以下の加熱処理を行いながら、ゲート電極の電位を電極の電位より高い状態に、1秒以上維持し、前記加熱処理前よりもしきい値電圧を増大させる。【選択図】図1
摘要翻译：要解决的问题：提供一种控制阈值电压的半导体器件的制造方法。解决方案：在包括第一半导体的半导体器件中，与第一半导体电接触的电极，栅电极和电子捕获层栅电极和第一半导体，通过在进行不低于125℃且不高于450℃的热处理的同时将栅电极的电位保持在高于电极电位的状态一秒钟以上，阈值电压比热处理前增加。

9. 发明专利

JP2014099429A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2014099429A
公开(公告)日：2014-05-29
申请号：JP2012239516
申请日：2012-10-30
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： YAMAZAKI SHUNPEI , SUZAWA HIDEOMI , SASAGAWA SHINYA , TANAKA TETSUHIRO
IPC分类号： H01L29/786 , H01L21/28 , H01L21/336 , H01L21/8242 , H01L21/8247 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/417 , H01L29/788 , H01L29/792
CPC分类号： H01L27/1225 , H01L21/02554 , H01L21/02565 , H01L21/02609 , H01L21/02617 , H01L21/02631 , H01L29/045 , H01L29/26 , H01L29/78 , H01L29/7869
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which can inhibit increase in oxygen deficiency in an oxide semiconductor layer; and provide a semiconductor device having good electric characteristics; and provide a semiconductor device having high reliability.SOLUTION: In a semiconductor device including an oxide semiconductor layer in a channel formation region, by using an oxide insulation film provided in contact with a downside of the oxide semiconductor layer and a gate insulation film provided in contact with an upper side of the oxide semiconductor layer, oxygen in the oxide insulation film and the gate insulation film is supplied to the oxide semiconductor layer. In addition, by using a conductive nitride as a metal film used for each of a source electrode layer, a drain electrode layer and a gate electrode layer, diffusion of oxygen to the metal film is inhibited.
摘要翻译：要解决的问题：提供能够抑制氧化物半导体层中的氧缺乏增加的半导体装置; 并提供具有良好电特性的半导体器件; 并且提供具有高可靠性的半导体器件。解决方案：在通道形成区域中包括氧化物半导体层的半导体器件中，通过使用与氧化物半导体层的下侧接触设置的氧化物绝缘膜和设置在氧化物半导体层与氧化物半导体层的上侧接触，氧化物绝缘膜中的氧和栅极绝缘膜被提供给氧化物半导体层。此外，通过使用导电氮化物作为用于源极电极层，漏极电极层和栅电极层中的每一个的金属膜，可以抑制氧向金属膜的扩散。

10. 发明专利

JP2013229587A Semiconductor device and electronic apparatus having the semiconductor device 有权
标题翻译：具有半导体器件的半导体器件和电子器件
公开(公告)号：JP2013229587A
公开(公告)日：2013-11-07
申请号：JP2013065395
申请日：2013-03-27
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： TANAKA TETSUHIRO
IPC分类号： H01L21/336 , H01L21/28 , H01L21/8242 , H01L21/8247 , H01L27/10 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/417 , H01L29/786 , H01L29/788 , H01L29/792
CPC分类号： H01L29/7869 , H01L23/53257 , H01L27/1225 , H01L27/124 , H01L29/66969 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a transistor with stable electric characteristics by compensating the oxygen deficiency of an oxide semiconductor film by suitably supplying oxygen to the transistor using the oxide semiconductor film, to provide a semiconductor device with high reliability by suppressing diffusion of oxygen to, for example, wiring connected to the transistor and electrodes, and to provide an electronic apparatus using the semiconductor device.SOLUTION: In a transistor including an oxide semiconductor film as a channel formation region, as a semiconductor device, an oxygen release type oxide insulating film is formed in contact with the channel formation region, and oxygen is supplied to the oxide semiconductor film from the oxide insulating film. Additionally, the formation of an oxygen barrier film at the outer periphery of the channel formation region can suppress diffusion of oxygen to, for example, wiring connected to the transistor and electrodes.
摘要翻译：要解决的问题：为了通过使用氧化物半导体膜向晶体管适当地供应氧来补偿氧化物半导体膜的氧缺陷来提供具有稳定电特性的晶体管，通过抑制氧的扩散来提供具有高可靠性的半导体器件例如，连接到晶体管和电极的布线，以及提供使用半导体器件的电子设备。解决方案：在包括作为沟道形成区的氧化物半导体膜的晶体管中，作为半导体器件，氧释放型氧化物绝缘形成与沟道形成区域接触的膜，并且氧化物从氧化物绝缘膜提供给氧化物半导体膜。此外，在沟道形成区域的外周形成氧阻隔膜可以抑制氧扩散到例如与晶体管和电极连接的布线。

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