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1. 发明专利

JP2014143420A Semiconductor device manufacturing method 审中-公开
标题翻译：半导体器件制造方法
公开(公告)号：JP2014143420A
公开(公告)日：2014-08-07
申请号：JP2014018210
申请日：2014-02-03
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： KOYAMA JUN , SAKATA JUNICHIRO , MARUYAMA YOSHIKI , IMOTO YUKI , ASANO YUJI , HIZUKA JUNICHI
IPC分类号： H01L21/822 , H01L21/336 , H01L21/8234 , H01L27/04 , H01L27/06 , H01L27/08 , H01L29/786 , H01L51/50 , H05B33/14
CPC分类号： H01L27/1255 , H01L27/12 , H01L27/1225 , H01L27/127 , H01L28/20 , H01L29/24 , H01L29/78606 , H01L29/7869
摘要： PROBLEM TO BE SOLVED: To provide a logic circuit utilizing a resistance element and a thin film transistor each of which is manufactured by an oxide semiconductor layer having controlled electric characteristics, and a semiconductor device utilizing the logic circuit.SOLUTION: A semiconductor device manufacturing method comprises: providing on an oxide semiconductor layer 905 applied to a resistance element, a silicon nitride layer 910 formed by a plasma CVD method using a gas containing a hydrogen compound such as silane (SiH) and ammonia (NH) so as to directly contact the oxide semiconductor layer 905; and providing on an oxide semiconductor layer 906 applied to a thin film transistor 355, a silicon nitride layer 910 via a silicon oxide layer 909 functioning as a barrier layer. Because of this, hydrogen is introduced to the oxide semiconductor layer 905 at higher concentration than to the oxide semiconductor layer 906. As a result, a resistance value of the oxide semiconductor layer 905 applied to the resistance element 354 becomes lower than a resistance value of the oxide semiconductor layer 906 applied to the thin film transistor 355.
摘要翻译：要解决的问题：提供利用电阻元件和薄膜晶体管的逻辑电路，每个电阻元件和薄膜晶体管由具有受控电特性的氧化物半导体层制造，以及利用逻辑电路的半导体器件。解决方案：半导体器件制造方法包括：在施加到电阻元件的氧化物半导体层905上提供通过使用含有氢化合物如硅烷（SiH）和氨（NH）的气体的等离子体CVD法形成的氮化硅层910，以直接接触氧化物半导体层905; 并且通过用作阻挡层的氧化硅层909在施加到薄膜晶体管355的氧化物半导体层906上提供氮化硅层910。因此，以与氧化物半导体层906相比更高的浓度将氢气引入氧化物半导体层905.结果，施加到电阻元件354的氧化物半导体层905的电阻值变得比电阻值施加到薄膜晶体管355的氧化物半导体层906。

2. 发明专利

JP2012216793A Semiconductor device and manufacturing method for the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2012216793A
公开(公告)日：2012-11-08
申请号：JP2012062924
申请日：2012-03-20
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： IMOTO YUKI , MARUYAMA YOSHIKI , ENDO YUTA
IPC分类号： H01L29/786 , G02F1/1368 , H01L21/336 , H01L21/8242 , H01L21/8247 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L29/7869 , H01L29/66742 , H01L29/66969 , H01L29/78603 , H01L29/78606
摘要： PROBLEM TO BE SOLVED: To manufacture a highly reliable semiconductor device with stable electric characteristics by giving stable electric characteristics to a transistor including an oxide semiconductor film.SOLUTION: A transistor as a semiconductor device including an oxide semiconductor film comprises a film (hydrogen seizing film) for seizing hydrogen out of the oxide semiconductor film and a film (hydrogen transmitting film) for diffusing hydrogen. The hydrogen is moved from the oxide semiconductor film to the hydrogen seizing film via the hydrogen transmitting film by heat treatment. Specifically, a base film or a protective film for the transistor including the oxide semiconductor film is formed as a multilayer structure including the hydrogen seizing film and the hydrogen transmitting film. On this occasion, the hydrogen transmitting film and the hydrogen seizing film are formed on a side in contact with the oxide semiconductor film and a side in contact with a gate electrode, respectively. Then, by performing the heat treatment, the hydrogen eliminated from the oxide semiconductor film can be moved to the hydrogen seizing film via the hydrogen transmitting film.
摘要翻译：要解决的问题：通过给包括氧化物半导体膜的晶体管提供稳定的电特性来制造具有稳定电特性的高度可靠的半导体器件。解决方案：作为包括氧化物半导体膜的半导体器件的晶体管包括用于从氧化物半导体膜中捕获氢的膜（氢气捕获膜）和用于扩散氢的膜（氢气透过膜）。通过热处理，氢经由氢传递膜从氧化物半导体膜移动到氢气捕获膜。具体地，包括氧化物半导体膜的晶体管的基膜或保护膜形成为包括氢捕获膜和氢传输膜的多层结构。在这种情况下，氢传输膜和氢捕获膜分别形成在与氧化物半导体膜接触的一侧和与栅电极接触的一侧。然后，通过进行热处理，从氧化物半导体膜除去的氢能够通过氢传输膜移动到氢捕获膜。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2012129511A Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2012129511A
公开(公告)日：2012-07-05
申请号：JP2011252457
申请日：2011-11-18
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： IMOTO YUKI , ASANO YUJI , MARUYAMA YOSHIKI
IPC分类号： H01L29/786 , H01L21/28 , H01L21/316 , H01L21/318 , H01L21/363 , H01L29/41 , H01L29/423 , H01L29/49
CPC分类号： H01L29/7869 , H01L21/823456 , H01L29/42392 , H01L29/4908 , H01L29/4966 , H01L29/66742 , H01L29/66969 , H01L51/0554
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having a normally-off transistor or a circuit including the normally-off transistor.SOLUTION: A semiconductor device comprises: a first oxide semiconductor layer serving as a channel formation region; a source electrode layer and a drain electrode layer overlapping the first oxide semiconductor layer; a gate insulating layer contacting the first oxide semiconductor layer, the source electrode layer, and the drain electrode layer; a second oxide semiconductor layer that contacts the gate insulating layer and overlaps the first oxide semiconductor layer; and a gate electrode layer provided on the second oxide semiconductor layer.
摘要翻译：要解决的问题：提供一种具有常闭晶体管的半导体器件或包括常关晶体管的电路。解决方案：半导体器件包括：用作沟道形成区域的第一氧化物半导体层; 源极电极层和与第一氧化物半导体层重叠的漏电极层; 接触所述第一氧化物半导体层，所述源极电极层和所述漏极电极层的栅极绝缘层; 第二氧化物半导体层，其接触所述栅极绝缘层并与所述第一氧化物半导体层重叠; 以及设置在第二氧化物半导体层上的栅电极层。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2014197678A 半導体装置有权
标题翻译：半导体器件
公开(公告)号：JP2014197678A
公开(公告)日：2014-10-16
申请号：JP2014082518
申请日：2014-04-14
申请人：株式会社半導体エネルギー研究所 , Semiconductor Energy Lab Co Ltd
发明人： KOYAMA JUN , SAKATA JUNICHIRO , MARUYAMA YOSHIKI , IMOTO YUKI , ASANO YUJI , HIZUKA JUNICHI
IPC分类号： H01L29/786 , G09F9/30 , H01L21/822 , H01L21/8234 , H01L27/04 , H01L27/06 , H01L51/50 , H05B33/14
CPC分类号： H01L27/1255 , H01L27/12 , H01L27/1225 , H01L27/127 , H01L28/20 , H01L29/24 , H01L29/78606 , H01L29/7869
摘要：【課題】電気特性の制御された酸化物半導体層を用いて作製された抵抗素子及び薄膜トランジスタを利用した論理回路及び半導体装置を提供する。【解決手段】抵抗素子354に適用される酸化物半導体層905上にシラン(SiH4)及びアンモニア(NH3)などの水素化合物を含むガスを用いたプラズマCVD法によって形成された窒化シリコン層910が直接接するように設けれ、且つ薄膜トランジスタ355に適用される酸化物半導体層906には、バリア層として機能する酸化シリコン層909を介して、窒化シリコン層910が設けられる。そのため、酸化物半導体層905には、酸化物半導体層906よりも高濃度に水素が導入される。結果として、抵抗素子354に適用される酸化物半導体層905の抵抗値が、薄膜トランジスタ355に適用される酸化物半導体層906の抵抗値よりも低くなる。【選択図】図11
摘要翻译：要解决的问题：提供一种使用通过使用具有受控电特性的氧化物半导体层制造的电阻元件和薄膜晶体管的逻辑电路和半导体器件。解决方案：在半导体器件中，氮化硅层 910，其与施加到电阻元件354的氧化物半导体层905直接接触，并且通过使用含有诸如硅烷（SiH）和氨（NH）的氢化合物的气体的等离子体CVD法形成，并且氮化硅层910设置在通过用作阻挡层的氧化硅层909施加到薄膜晶体管355的氧化物半导体层906上。因此，向氧化物半导体层905引入比氧化物半导体层906高的浓度的氢。结果，施加到电阻元件354的氧化物半导体层905的电阻值变得低于氧化物半导体层905的电阻值施加到薄膜晶体管355的半导体层906。

5. 发明专利

JP2013144844A Method for producing oxide semiconductor film 有权
标题翻译：氧化物半导体膜生产方法
公开(公告)号：JP2013144844A
公开(公告)日：2013-07-25
申请号：JP2012272630
申请日：2012-12-13
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： YAMAZAKI SHUNPEI , MARUYAMA YOSHIKI , IMOTO YUKI , SATO HITOMI , WATANABE MASAHIRO , MASUYAMA MITSUO , OKAZAKI KENICHI , NAKAJIMA MOTOI , SHIMAZU TAKASHI
IPC分类号： C23C14/34 , C04B35/00 , H01L29/786
CPC分类号： C23C14/08 , C23C14/086 , C23C14/3414 , C23C14/345 , H01L21/02565 , H01L21/02631 , H01L29/24 , H01L29/66969 , H01L29/7869
摘要： PROBLEM TO BE SOLVED: To produce a semiconductor device including a transistor using an oxide semiconductor with high reliability because a transistor using the oxide semiconductor has sometimes less reliability compared to a transistor using amorphous silicon.SOLUTION: An oxide semiconductor film is deposited by a sputtering method, using a sputtering target comprising the oxide semiconductor having a crystalline region in which the c-axis, which is produced by mixing raw materials so that the composition ratio can achieve a crystal structure, is parallel to a normal vector of the top surface.
摘要翻译：要解决的问题：为了制造包括具有高可靠性的使用氧化物半导体的晶体管的半导体器件，因为与使用非晶硅的晶体管相比，使用氧化物半导体的晶体管有时具有更低的可靠性。解决方案：通过溅射来沉积氧化物半导体膜方法中，使用包含具有结晶区域的氧化物半导体的溅射靶，其中通过混合原料以使得组成比可以获得晶体结构而产生的c轴平行于顶表面的法线矢量。

6. 发明专利

JP2013144841A Target, method for using the target, and method for producing semiconductor device 有权
标题翻译：目标，使用目标的方法以及生产半导体器件的方法
公开(公告)号：JP2013144841A
公开(公告)日：2013-07-25
申请号：JP2012123954
申请日：2012-05-31
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： YAMAZAKI SHUNPEI , MARUYAMA YOSHIKI , IMOTO YUKI , SATO HITOMI , WATANABE MASAHIRO , MASUYAMA MITSUO , OKAZAKI KENICHI , NAKAJIMA MOTOI , SHIMAZU TAKASHI
IPC分类号： C23C14/34 , C04B35/00 , C23C14/08 , H01L21/363 , H01L29/786
CPC分类号： C23C14/08 , C23C14/086 , C23C14/3414 , C23C14/345 , H01L21/02565 , H01L21/02631 , H01L29/24 , H01L29/66969 , H01L29/7869
摘要： PROBLEM TO BE SOLVED: To produce a semiconductor device including a transistor using an oxide semiconductor with high reliability because a transistor using the oxide semiconductor has sometimes less reliability compared to a transistor using amorphous silicon.SOLUTION: An oxide semiconductor film is deposited by a sputtering method, using a sputtering target comprising the oxide semiconductor having a crystalline region in which the c-axis, which is produced by mixing raw materials so that the composition ratio can achieve a crystal structure, is parallel to a normal vector of the top surface.
摘要翻译：要解决的问题：为了制造包括具有高可靠性的使用氧化物半导体的晶体管的半导体器件，因为与使用非晶硅的晶体管相比，使用氧化物半导体的晶体管有时具有更低的可靠性。解决方案：通过溅射来沉积氧化物半导体膜方法中，使用包含具有结晶区域的氧化物半导体的溅射靶，其中通过混合原料以使得组成比可以获得晶体结构而产生的c轴平行于顶表面的法线矢量。

7. 发明专利

JP2013062517A Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：JP2013062517A
公开(公告)日：2013-04-04
申请号：JP2012232501
申请日：2012-10-22
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： KOYAMA JUN , SAKATA JUNICHIRO , MARUYAMA YOSHIKI , IMOTO YUKI , ASANO YUJI , HIZUKA JUNICHI
IPC分类号： H01L29/786 , H01L21/316 , H01L21/318 , H01L21/336 , H01L21/822 , H01L27/04 , H01L51/50 , H05B33/14
CPC分类号： H01L27/1255 , H01L27/12 , H01L27/1225 , H01L27/127 , H01L28/20 , H01L29/24 , H01L29/78606 , H01L29/7869
摘要： PROBLEM TO BE SOLVED: To provide a logic circuit utilizing a resistance element and a thin film transistor each of which is manufactured by an oxide semiconductor layer having controlled electric characteristics, and a semiconductor device utilizing the logic circuit.SOLUTION: A semiconductor device manufacturing method comprises: providing on an oxide semiconductor layer 905 applied to a resistance element, a silicon nitride layer 910 formed by a plasma CVD method using a gas containing a hydrogen compound such as silane (SiH) and ammonia (NH) so as to directly contact the oxide semiconductor layer 905; and providing on an oxide semiconductor layer 906 applied to a thin film transistor 355, a silicon nitride layer 910 via a silicon oxide layer 909 functioning as a barrier layer. Because of this, hydrogen is introduced to the oxide semiconductor layer 905 at higher concentration than to the oxide semiconductor layer 906. As a result, a resistance value of the oxide semiconductor layer 905 applied to the resistance element 354 becomes lower than a resistance value of the oxide semiconductor layer 906 applied to the thin film transistor 355.
摘要翻译：要解决的问题：提供利用电阻元件和薄膜晶体管的逻辑电路，每个电阻元件和薄膜晶体管由具有受控电特性的氧化物半导体层制造，以及利用逻辑电路的半导体器件。解决方案：半导体器件制造方法包括：在施加到电阻元件的氧化物半导体层905上提供通过使用含有氢化合物如硅烷的气体（SiH 4 ）和氨（NH 3 ），以直接接触氧化物半导体层905; 并且通过用作阻挡层的氧化硅层909在施加到薄膜晶体管355的氧化物半导体层906上提供氮化硅层910。因此，以与氧化物半导体层906相比更高的浓度将氢气引入氧化物半导体层905.结果，施加到电阻元件354的氧化物半导体层905的电阻值变得比电阻值施加到薄膜晶体管355的氧化物半导体层906。（C）2013，JPO和INPIT

8. 发明专利

JP2013042143A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2013042143A
公开(公告)日：2013-02-28
申请号：JP2012182276
申请日：2012-08-21
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： KOYAMA JUN , SAKATA JUNICHIRO , MARUYAMA YOSHIKI , IMOTO YUKI , ASANO YUJI , HIZUKA JUNICHI
IPC分类号： H01L21/8234 , G02F1/1345 , G02F1/1368 , G02F1/167 , G02F1/17 , H01L21/336 , H01L21/822 , H01L27/04 , H01L27/06 , H01L27/08 , H01L27/088 , H01L29/786 , H01L51/50 , H05B33/14
CPC分类号： H01L27/1255 , H01L27/12 , H01L27/1225 , H01L27/127 , H01L28/20 , H01L29/24 , H01L29/78606 , H01L29/7869
摘要： PROBLEM TO BE SOLVED: To provide a logic circuit utilizing a resistance element and a thin film transistor which are manufactured by using oxide semiconductor layers, respectively, and provide a semiconductor device utilizing the logic circuit.SOLUTION: On an oxide semiconductor layer 905 applied to a resistance element 354, a silicon nitride layer 910 formed by a plasma CVD method using a gas containing a hydrogen compound such as silane (SiH) and ammonia (NH) is provided in such a manner as to directly contact the oxide semiconductor layer 905. In addition, on an oxide semiconductor layer 906 applied to a thin film transistor 355, a silicon nitride layer 910 is provided via a silicon oxide layer 909 functioning as a barrier layer. Accordingly, hydrogen of a higher concentration is introduced to the oxide semiconductor layer 905 than that to the oxide semiconductor layer 906. As a result, a resistance value of the oxide semiconductor layer 905 applied to the resistance element 354 becomes lower than a resistance value of the oxide semiconductor layer 906 applied to the thin film transistor 355.
摘要翻译：要解决的问题：提供利用通过使用氧化物半导体层制造的电阻元件和薄膜晶体管的逻辑电路，并提供利用逻辑电路的半导体器件。解决方案：在施加到电阻元件354的氧化物半导体层905上，通过使用含有氢化合物如硅烷的气体的等离子体CVD法形成的氮化硅层910（SiH 4 ）和氨（NH 3 ）以与氧化物半导体层905直接接触的方式提供。另外，在施加到薄膜晶体管355通过用作阻挡层的氧化硅层909提供氮化硅层910。因此，与氧化物半导体层906相比，向氧化物半导体层905引入较高浓度的氢。结果，施加到电阻元件354的氧化物半导体层905的电阻值变得比电阻值施加到薄膜晶体管355的氧化物半导体层906。（C）2013，JPO和INPIT

9. 发明专利

JP2010133020A Conductive oxynitride and method for manufacturing conductive oxynitride film 有权
标题翻译：导电氧化硅及其制造导电氧化膜的方法
公开(公告)号：JP2010133020A
公开(公告)日：2010-06-17
申请号：JP2009249677
申请日：2009-10-30
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： SAKATA JUNICHIRO , MARUYAMA YOSHIKI , IMOTO YUKI , ASANO YUJI , HIZUKA JUNICHI
IPC分类号： C23C14/06 , G02F1/1343 , H01L21/28 , H01L21/285
CPC分类号： C23C14/5846 , C04B35/58 , C04B2235/3284 , C04B2235/3286 , C23C14/0057 , C23C14/0676 , H01L27/1225 , H01L27/124 , H01L29/7869
摘要： PROBLEM TO BE SOLVED: To solve the problem that an electrode formed using a transparent conductive oxide is likely to be crystallized by heat treatment performed in the manufacturing process of a semiconductor device, and, in the case of a thin film element using an electrode having a significantly uneven surface due to crystallization, a short circuit is likely to occur and thus reliability of the element is degraded, and to provide a light-transmitting conductive oxynitride which is not crystallized even if subjected to heat treatment and a manufacturing method thereof. SOLUTION: It is found that an oxynitride containing indium, gallium, and zinc, to which hydrogen atoms are added as impurities, is a light-transmitting conductive film which is not crystallized even if heated at 350°C, and the object is achieved. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题为了解决使用透明导电氧化物形成的电极在半导体器件的制造工艺中进行的热处理可能结晶的问题，并且在使用薄膜元件的情况下由于结晶而具有显着不平坦表面的电极，容易发生短路，因此元件的可靠性降低，并且提供即使经受热处理也不会结晶的透光导电氮氧化物，以及制造方法它们。解决方案：发现含有氢原子作为杂质的含铟，镓和锌的氧氮化物是即使在350℃下加热也不结晶的透光导电膜，并且该物体已完成。版权所有（C）2010，JPO＆INPIT

10. 发明专利

JP2013249546A Conductive film and electrode 有权
标题翻译：导电膜和电极
公开(公告)号：JP2013249546A
公开(公告)日：2013-12-12
申请号：JP2013182676
申请日：2013-09-04
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： SAKATA JUNICHIRO , MARUYAMA YOSHIKI , IMOTO YUKI , ASANO YUJI , HIZUKA JUNICHI
IPC分类号： C23C14/06 , H01L21/28
CPC分类号： C23C14/5846 , C04B35/58 , C04B2235/3284 , C04B2235/3286 , C23C14/0057 , C23C14/0676 , H01L27/1225 , H01L27/124 , H01L29/7869
摘要： PROBLEM TO BE SOLVED: To provide a light-transmitting conductive oxynitride which is not crystallized even if subjected to heat treatment and a method for manufacturing the light-transmitting conductive oxynitride, in order to solve such a problem that an electrode formed of a transparent conductive oxide is likely to be crystallized by heat treatment applied in the manufacturing process of a semiconductor device, a short circuit is likely to occur in a thin film element using an electrode having a significantly uneven surface due to crystallization, and thus reliability of the element is degraded.SOLUTION: An oxynitride including indium, gallium, and zinc, to which hydrogen atoms are added as impurities, is a light-transmitting conductive film which is not crystallized even if heated at 350°C.
摘要翻译：要解决的问题：为了提供即使经受热处理也不结晶的透光导电氮氧化物以及制造透光性导电氮氧化物的方法，为了解决由透明导电性物质形成的电极氧化物可能通过在半导体器件的制造工艺中应用的热处理而结晶，在使用由于结晶而具有显着不平坦表面的电极的薄膜元件中容易发生短路，因此元件的可靠性为降解。解决方案：作为杂质加入氢原子的包括铟，镓和锌的氧氮化物是即使在350℃下加热也不会结晶的透光导电膜。

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