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1. 发明专利

JP2015024937A グラファイト膜の製造方法およびグラファイト構造体审中-公开
标题翻译：生产石墨膜和石墨结构的方法
公开(公告)号：JP2015024937A
公开(公告)日：2015-02-05
申请号：JP2013155759
申请日：2013-07-26
申请人：住友電気工業株式会社 , Sumitomo Electric Ind Ltd , 日新電機株式会社 , Nissin Electric Co Ltd , 国立大学法人筑波大学 , Univ Of Tsukuba , 国立大学法人筑波大学
发明人： HIKATA TAKESHI , OKUBO SOICHIRO , UTSUNOMIYA RISA , AZUMA YUGO , FUJITA JUNICHI , MURAKAMI KATSUHISA
IPC分类号： C01B31/04
摘要：【課題】小規模な製造設備でグラファイト膜を簡易かつ効率良く製造することができるグラファイト膜の製造方法およびグラファイト構造体を提供する。【解決手段】この発明に従ったグラファイト膜の製造方法は、ベース体10の表面にガリウム体20を配置する工程と、ベース体10に炭素を含有する原料ガスを供給するとともに、ベース体10を加熱することにより、ガリウム体20が加熱されて得られた液体ガリウムとベース体10との界面にグラファイト膜を成長させる工程とを備える。【選択図】図2
摘要翻译：要解决的问题：提供一种石墨膜的制造方法，其可以使小型生产设备和石墨结构简单有效地生产石墨膜。解决方案：一种制造石墨膜的方法包括：在基体10的表面上形成镓体20，同时向基体10供给含有碳的原料气体的同时对基体10进行加热，得到通过加热镓体20形成的液态镓，在液体镓和基体10之间的边界处的石墨膜。

2. 发明专利

JP2014162705A Carbon nano-structure, production method and production apparatus of carbon nano-structure 有权
标题翻译：碳纳米结构，碳纳米结构的生产方法和生产设备
公开(公告)号：JP2014162705A
公开(公告)日：2014-09-08
申请号：JP2013037552
申请日：2013-02-27
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , Univ Of Tsukuba , 国立大学法人筑波大学 , Nissin Electric Co Ltd , 日新電機株式会社
发明人： HIKATA TAKESHI , OKUBO SOICHIRO , UTSUNOMIYA RISA , AZUMA YUGO , FUJITA JUNICHI , MURAKAMI KATSUHISA
IPC分类号： C01B31/02
CPC分类号： C01B31/0233 , B01J23/74 , B01J23/745 , B01J35/0013 , B82Y40/00 , C01B31/0206 , C01B32/15 , C01B32/162 , C23C16/04 , C23C16/26 , C23C16/46
摘要： PROBLEM TO BE SOLVED: To provide a long carbon nano-structure in which occurrence of a bend or the like is suppressed, a production method of the carbon nano-structure, and a production apparatus used in the production method of the carbon nano-structure.SOLUTION: A production method of a carbon nano-structure according to this invention includes: a preparation step (S10) to prepare a base body and an oxidation step (S20); and a step (S30) to grow the carbon nano-structure. In the step to prepare the base body, the base body in which at least a portion of a contact part of a catalyst member and a separation member or an integrated part thereof is oxidized is prepared. In the step (S30), the carbon nano-structure is grown on a separation interface region of the catalyst member and the separation member. The step (S30) includes at least one of a step to locally supply a raw material gas to a part of the catalyst member facing the separation interface region where the carbon nano-structure is growing and a step to locally heat the separation interface region.
摘要翻译：要解决的问题：为了提供抑制弯曲等发生的长碳纳米结构体，碳纳米结构体的制造方法以及碳纳米结构体的制造方法中使用的制造装置解决方案：根据本发明的碳纳米结构体的制造方法包括：准备基体和氧化工序的制备工序（S10）（S20）。以及生长碳纳米结构的步骤（S30）。在制备基体的步骤中，制备催化剂构件的接触部分的至少一部分和分离构件或其整体部分被氧化的基体。在步骤（S30）中，碳纳米结构在催化剂构件和分离构件的分离界面区域上生长。步骤（S30）包括以下步骤中的至少一个：将原料气体局部供应到面向碳纳米结构生长的分离界面区域的催化剂构件的一部分和局部加热分离界面区域的步骤中的至少一个。

3. 发明专利

JP2012190822A Carbon nanostructure, capacitor, and processing method and manufacturing method of carbon nanostructure 有权
标题翻译：碳纳米管结构，电容器和加工方法及碳纳米管结构的制造方法
公开(公告)号：JP2012190822A
公开(公告)日：2012-10-04
申请号：JP2011050388
申请日：2011-03-08
申请人： Univ Of Tsukuba , Sumitomo Electric Ind Ltd , Nissin Electric Co Ltd , 住友電気工業株式会社 , 国立大学法人筑波大学 , 日新電機株式会社
发明人： FUJITA JUNICHI , HIKATA TAKESHI , OKUBO SOICHIRO , UTSUNOMIYA RISA , MATSUBA TERUAKI
IPC分类号： C01B31/02 , H01G11/36
CPC分类号： H01G9/048 , B82Y30/00 , B82Y40/00 , B82Y99/00 , C01B32/168 , C01B32/176 , C01B2202/02 , C01B2202/22 , C01B2202/34 , C01B2202/36 , H01G11/36 , Y02E60/13
摘要： PROBLEM TO BE SOLVED: To control a shape and electric characteristics of a carbon nanostructure.SOLUTION: A processing method of a carbon nanostructure includes a step (CNT preparation step) of preparing a carbon nanostructure (for example, a carbon nanotube 1) and a step (irradiation step) of irradiating the carbon nanotube 1 with an energy ray (for example, an electron beam) under the state that vibration is applied to the carbon nanotube 1. Thereby, the length and electric characteristics of the carbon nanotube 1 can be easily changed.
摘要翻译：要解决的问题：控制碳纳米结构的形状和电特性。解决方案：碳纳米结构的加工方法包括制备碳纳米结构（例如，碳纳米管1）的步骤（CNT制备步骤）和用能量照射碳纳米管1的步骤（照射步骤）（例如，电子束），从而可以容易地改变碳纳米管1的长度和电特性。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2012046388A Carbon nano-structure, method for processing the same, and method for manufacturing the same 审中-公开
标题翻译：碳纳米结构，其加工方法及其制造方法
公开(公告)号：JP2012046388A
公开(公告)日：2012-03-08
申请号：JP2010191071
申请日：2010-08-27
申请人： Nissin Electric Co Ltd , Sumitomo Electric Ind Ltd , Univ Of Tsukuba , 住友電気工業株式会社 , 国立大学法人筑波大学 , 日新電機株式会社
发明人： FUJITA JUNICHI , OKUBO SOICHIRO , UTSUNOMIYA RISA , MATSUBA TERUAKI
IPC分类号： C01B31/02 , B82B1/00 , B82B3/00
摘要： PROBLEM TO BE SOLVED: To control the shape and electric characteristics of a carbon nano-structure.SOLUTION: A method for processing a carbon nano-structure includes a step (CNT preparation step) of preparing a carbon nano-structure (for example, a carbon nanotube 1), and a step (irradiation step) of irradiating the carbon nanotube 1 with an energy ray (for example, an electron beam) under the state that a stress is applied uniaxially to the carbon nanotube 1. Thereby, the length and electric characteristics of the carbon nano-structure can easily be changed.
摘要翻译：要解决的问题：控制碳纳米结构的形状和电特性。解决方案：一种用于处理碳纳米结构的方法包括制备碳纳米结构（例如，碳纳米管1）的步骤（CNT制备步骤）和照射碳在向碳纳米管1施加应力的状态下具有能量射线（例如电子束）的纳米管1，由此可以容易地改变碳纳米结构体的长度和电特性。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2013237572A Method and apparatus for producing carbon nanostructure, and carbon nanostructure assembly 有权
标题翻译：生产碳纳米结构的方法和装置，以及碳纳米管组件
公开(公告)号：JP2013237572A
公开(公告)日：2013-11-28
申请号：JP2012109661
申请日：2012-05-11
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , Nissin Electric Co Ltd , 日新電機株式会社
发明人： HIKATA TAKESHI , OKUBO SOICHIRO , UTSUNOMIYA RISA , AZUMA YUGO
IPC分类号： C01B31/02 , B82Y40/00
CPC分类号： C01B31/0226 , B01J4/008 , B01J15/005 , B01J19/1887 , B01J2219/00058 , B01J2219/00135 , B82Y30/00 , B82Y40/00 , C01B32/16 , Y10T428/19
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a carbon nanostructure with reduced occurrence of a bend or the like.SOLUTION: A method for producing a carbon nanostructure includes: a step (preparation step (S10)) for preparing a base body formed of a catalyst member including a catalyst and a separation member that are in contact with or integral with each other; a step (oxidation step (S20)) for oxidizing at least a part of a contact portion or integral portion of the catalyst member and the separation member in the base body; a step (CNT growth step (S30)) for bringing a carbon-containing source gas into contact with the catalyst member and/or the separation member; and a step (CNT growth step (S30)) for growing a carbon nanostructure. In the CNT growth step (S30), the carbon nanostructure is grown in a separation interface region between the catalyst member and the separation member, by heating the base body while separating the separation member from the catalyst member.
摘要翻译：要解决的问题：提供一种生产碳纳米结构的方法，减少弯曲等的发生。方法：一种制备碳纳米结构的方法，包括：制备形成的基体的步骤（制备步骤（S10））包括与彼此接触或一体的催化剂和分离构件的催化剂构件; 步骤（氧化步骤（S20）），用于氧化基体中的催化剂构件的接触部分或整体部分的至少一部分和分离构件; 用于使含碳源气体与催化剂构件和/或分离构件接触的步骤（CNT生长步骤（S30））; 和用于生长碳纳米结构的步骤（CNT生长步骤（S30））。在CNT生长步骤（S30）中，通过在分离构件与催化剂构件分离的同时加热基体，在催化剂构件与分离构件之间的分离界面区域中生长碳纳米结构。

6. 发明专利

JP2006142338A Working machine and working method 审中-公开
标题翻译：工作机器和工作方法
公开(公告)号：JP2006142338A
公开(公告)日：2006-06-08
申请号：JP2004336448
申请日：2004-11-19
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： OKAZAKI TORU , YUSHIO YASUHISA , OKUBO SOICHIRO , FUTAJIMA HIDEAKI
IPC分类号： B21D26/12 , B30B5/00
摘要： PROBLEM TO BE SOLVED: To realize a working machine and a working method which is capable of freely change the working conditions and has less restriction against practice in comparison with the case that gunpowder or the like is used. SOLUTION: This working machine is provided with a treating vessel 2, a coaxial electrode 1, a pulse power source 6 and a sound velocity changing member ( a heating member 15, a cooling member 16, a temperature measuring member, etc. ). The treating vessel 2 holds a material 12 to be worked which is arranged on dies 13 and water 11 which is arranged so as to come into contact with the material 12 to be worked in the inside. The coaxial electrode 1 is arranged so as to come into contact with the water 11 in the inside of the treating vessel 2. The coaxial electrode 1 is used for generating electric discharge. The pulse power source 6 supplies electric power to the coaxial electrode 1 to generate the electric discharge. The sound velocity changing member such as the heating member 15, the cooling member 16, the temperature measuring member 17 changes the sound velocity in a medium such as water 11. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：与使用火药等的情况相比，实现能够自由地改变工作条件并且具有较少的实践限制的工作机器和工作方法。解决方案：该工作机设置有处理容器2，同轴电极1，脉冲电源6和声速改变构件（加热构件15，冷却构件16，温度测量构件等））。处理容器2保持布置在模具13和水11上的待加工材料12，水11被布置成与要在其内部加工的材料12接触。同轴电极1被布置成与处理容器2内部的水11接触。同轴电极1用于产生放电。脉冲电源6向同轴电极1供电以产生放电。诸如加热构件15，冷却构件16，温度测量构件17之类的声速改变构件改变诸如水11的介质中的声速。（C）2006年，JPO和NCIPI

7. 发明专利

JP2005010808A Dlc film and reforming method for dlc film 审中-公开
标题翻译： DLC膜的DLC膜和改性方法
公开(公告)号：JP2005010808A
公开(公告)日：2005-01-13
申请号：JP2004270226
申请日：2004-09-16
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： OKUBO SOICHIRO , MATSUURA TAKASHI
IPC分类号： G02B5/28 , G02B5/30 , G02F1/09
摘要： PROBLEM TO BE SOLVED: To provide new optical material useful for the miniaturization, the reduction of cost, and the high performance of various optical devices. SOLUTION: The reforming method for a diamond-like carbon (DLC) film is characterized by irradiating with a particle beam or an energy beam at least the partial area of the DLC film and enhancing the refractive index of the area, thereby reforming so that the distribution structure of the refractive index is formed in the DLC film. The DLC film reformed by such a reforming method has various kinds of the distribution structure of the refractive index and is utilized as an optical component in various optical fields. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供用于小型化，成本降低和各种光学器件的高性能的新型光学材料。解决方案：用于金刚石碳（DLC）膜的重整方法的特征在于，至少用DLC膜的部分区域照射粒子束或能量束，并提高该区域的折射率，由此重整使得在DLC膜中形成折射率的分布结构。通过这种重整方法改性的DLC膜具有各种各样的折射率分布结构，并被用作各种光学领域的光学部件。版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2005347702A MANUFACTURING METHOD OF P-TYPE GaN-BASED BASE MATERIAL 审中-公开
标题翻译： P型GaN基基材的制造方法
公开(公告)号：JP2005347702A
公开(公告)日：2005-12-15
申请号：JP2004168844
申请日：2004-06-07
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： IKEDA AYAKO , KIYAMA MAKOTO , OKUBO SOICHIRO
IPC分类号： C30B33/04 , H01L21/205 , H01L21/324
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a p-type GaN-based base material which activates p-type GaN of high-quality properties at a low temperature.
SOLUTION: In the method, synchrotron radiation is radiated to the GaN-based base material with Mg added, by which the Mg is activated at the low temperature, and the p-type GaN-based base material of the high-quality properties is manufactured. A phenomenon of forming a p-type is considered to be caused by dissociation of H atoms in the GaN from the MG by the synchrotron radiation, namely when H incorporated from SiH
4 or NH
3 used in an MOCVD method or the like reacts with N, the Mg is not activated, but when the synchrotron radiation is radiated, it is considered that such bonding is dissociated and that the Mg is activated.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供在低温下活化高品质特性的p型GaN的p型GaN基基材的制造方法。解决方案：在该方法中，同时加速器辐射辐射到GaN基材料中，Mg被加入，Mg在低温下被激活，并且高品质的p型GaN基材料属性被制造。认为形成p型的现象是通过同步加速器辐射从MG与GaN中的H原子的离解引起的，即当从SiH 4 或NH 3引入H时，在MOCVD法等中使用的/ SB与N反应，Mg不被激活，但是当同步加速器辐射被辐射时，认为这种键合被解离并且Mg被激活。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2004191716A Light emitting device having diffraction optical film on light emission surface and its manufacturing method 有权
$Light emitting device having diffraction optical film on light emission surface and its manufacturing method$
公开(公告)号：JP2004191716A
公开(公告)日：2004-07-08
申请号：JP2002360493
申请日：2002-12-12
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： USHIRO TOSHIHIKO , OKUBO SOICHIRO , MATSUURA TAKASHI
IPC分类号： G02B5/18 , G02B27/00 , H01S5/026 , H01S5/028
CPC分类号： H01S5/028 , G02B1/02 , G02B5/1857 , G02B5/1871 , G02B27/1086
摘要： PROBLEM TO BE SOLVED: To provide a light emitting device which has a practical and small diffraction optical film on its light emission surface efficiently and by low cost.
SOLUTION: The light emitting device (LD) includes a diffraction optical film (DF) which is formed on its light emission surface. The diffraction film includes a translucent DLC (Diamond-Like Carbon) layer, and the DLC layer includes a refractive index modulation type diffraction grating which includes a local region having a relatively high refractive index and a local region having a relatively low refractive index.
COPYRIGHT: (C)2004,JPO&NCIPI

10. 发明专利

JP2006083413A Powder compacting method and powder compacting device 审中-公开
标题翻译：粉末压制方法和粉末压制装置
公开(公告)号：JP2006083413A
公开(公告)日：2006-03-30
申请号：JP2004267233
申请日：2004-09-14
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： OKAZAKI TORU , HATA RYOSUKE , OKUBO SOICHIRO
IPC分类号： B22F3/087 , B30B5/00 , B30B11/00
摘要： PROBLEM TO BE SOLVED: To provide a powder compacting method which realizes excellent productivity, and to provide a powder compacting device capable of easily implementing the method by a compact constitution.
SOLUTION: The powder compacting method comprises: a process where metal powder 14 is filled into a die 13; and a process where impact force is applied to the metal powder 14 to form a compact. The process of forming the compact includes a process where shock waves are generated in water 11 by discharge, and the shock waves are acted on the metal powder 14 via the water 11.
COPYRIGHT: (C)2006,JPO&NCIPI

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