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3. 发明专利

JP5326511B2 Semiconductor laser device 有权
公开(公告)号：JP5326511B2
公开(公告)日：2013-10-30
申请号：JP2008290923
申请日：2008-11-13
申请人：三菱電機株式会社
发明人：君男鴫原
IPC分类号： H01S5/32
CPC分类号： H01S5/20 , B82Y20/00 , H01S5/1053 , H01S5/2004 , H01S5/343 , H01S5/3436 , H01S2301/18
摘要： A semiconductor laser device includes: an n-type cladding layer; a p-type cladding layer; and an optical waveguide portion disposed between the n-type and p-type cladding layers and including spaced-apart active layers. The optical waveguide portion permits lasing in a crystal growth direction of the active layers in at least three modes, including the fundamental mode and two higher order modes. The number of active layers is equal to or greater than the number of extreme points of the electric field of a particular one of the higher order modes. At least one of the active layers is disposed near each extreme point of the electric field of the particular higher order mode, within the optical waveguide portion.

4. 发明专利

JP4894398B2 Semiconductor laser device 有权
公开(公告)号：JP4894398B2
公开(公告)日：2012-03-14
申请号：JP2006209746
申请日：2006-08-01
申请人：三菱電機株式会社
发明人：和重川崎 , 公隆柴田 , 吉彦花巻 , 君男鴫原
IPC分类号： H01S5/20
CPC分类号： H01S5/20 , B82Y20/00 , H01S5/2004 , H01S5/2036 , H01S5/2059 , H01S5/3211 , H01S5/34313 , H01S5/34373

6. 发明专利

JP5377432B2 Semiconductor optical element device 有权
公开(公告)号：JP5377432B2
公开(公告)日：2013-12-25
申请号：JP2010156744
申请日：2010-07-09
申请人：三菱電機株式会社
发明人：君男鴫原 , 和重川崎 , 裕益松岡
IPC分类号： H01S5/14
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor optical element device improving the degree of freedom of design of a nonreflective film even when a total film thickness of a plurality of films is a value different from λ/4. SOLUTION: The nonreflective film is formed with a plurality of films each having a refractive index higher than 1 and formed using high-reflectivity films (a first film 7, a third film 9, a fifth film 11) each having a refractive index higher than a square-root value of an effective refractive index of a semiconductor optical element, and low-refractive index films (a second film 8, a fourth film 10, a sixth film 12, a seventh film 13) each having a refractive index lower than a square-root value of an effective refractive index of a semiconductor laser 31. The plurality of films are formed to have at least three compositions while each film is formed with a single composition, and to set both a real part and an imaginary part of an amplitude reflectance to zero as a whole. COPYRIGHT: (C)2010,JPO&INPIT

8. 发明专利

JP4387472B2 Semiconductor laser 失效
公开(公告)号：JP4387472B2
公开(公告)日：2009-12-16
申请号：JP3573298
申请日：1998-02-18
申请人：三菱電機株式会社
发明人：君男鴫原
IPC分类号： H01S5/00 , H01S5/22 , H01S5/20 , H01S5/32
CPC分类号： H01S5/22 , H01S5/2004 , H01S5/2031 , H01S5/3213 , H01S5/3215 , H01S2301/18

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