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    • 2. 发明专利
    • Semiconductor optical element device
    • JP5377432B2
    • 2013-12-25
    • JP2010156744
    • 2010-07-09
    • 三菱電機株式会社
    • 君男 鴫原和重 川崎裕益 松岡
    • H01S5/14
    • PROBLEM TO BE SOLVED: To provide a semiconductor optical element device improving the degree of freedom of design of a nonreflective film even when a total film thickness of a plurality of films is a value different from λ/4. SOLUTION: The nonreflective film is formed with a plurality of films each having a refractive index higher than 1 and formed using high-reflectivity films (a first film 7, a third film 9, a fifth film 11) each having a refractive index higher than a square-root value of an effective refractive index of a semiconductor optical element, and low-refractive index films (a second film 8, a fourth film 10, a sixth film 12, a seventh film 13) each having a refractive index lower than a square-root value of an effective refractive index of a semiconductor laser 31. The plurality of films are formed to have at least three compositions while each film is formed with a single composition, and to set both a real part and an imaginary part of an amplitude reflectance to zero as a whole. COPYRIGHT: (C)2010,JPO&INPIT