专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2015179656A 水電池内蔵薄型ライト审中-公开
公开(公告)号：JP2015179656A
公开(公告)日：2015-10-08
申请号：JP2014078185
申请日：2014-03-18
申请人： KURAMOTO SEISAKUSHO CO LTD
发明人： ABE CHIKASHI , TSUTSUI SHINOBU , CHIKUI MANABU , WATABE NAOSHI , ICHIJO TAKASHI , KOMINAMI TOSHIHIRO
IPC分类号： F21L4/00 , F21S9/02 , F21V31/00 , H01M2/10 , H01M2/36 , H01M6/32
摘要：【課題】長期間の保存に耐え、取扱いが容易で、雨天などの悪環境下でも使用可能なように防水性に優れ、地震や火災などの災害時の非常用ライトとして使用可能な軽量で携帯性に優れた水電池内蔵薄型ライトを提供する。【解決手段】水電池と、水が密封収納されたラミネートフィルムを融着してなるラミネートパウチと、光を発する発光ダイオード(以下、LED)と、LEDと電池間を接続する電気配線とを備えており、これらの部品が気体を透過させにくい性質(ガスバリア性)が高く防湿性の高いフィルムを使用し圧空成形法あるいは真空成形法により製作された樹脂トレイに分離収納され、ガスバリア性が高く防湿性の高いトップフィルムによって融着密封されていることを特徴とする水電池内蔵薄型ライトを提供する。【選択図】図6

2. 发明专利

JP2012091969A Quartz glass crucible and method for manufacturing the same, and method for manufacturing silicon single crystal 审中-公开
标题翻译：石墨玻璃巧克力及其制造方法，以及制造硅单晶的方法
公开(公告)号：JP2012091969A
公开(公告)日：2012-05-17
申请号：JP2010241409
申请日：2010-10-27
申请人： Kuramoto Seisakusho Co Ltd , 株式会社倉元製作所
发明人： FUJISHIRO MASARU , TAKAHASHI FUMIO , ABE CHIKASHI , NAKAJIMA SHINICHI , TSUTSUI SHINOBU , CHIKUI MANABU
IPC分类号： C30B29/06 , C03B20/00 , C30B15/10
摘要： PROBLEM TO BE SOLVED: To provide a quartz glass crucible which is capable of suppressing peeling of a crystallized substance on an inner surface when pulling a silicon single crystal by especially using an large-caliber quartz glass crucible, has less toxicity, and is easy to handle and a method for manufacturing the same, and to provide a method for manufacturing the silicon single crystal.SOLUTION: The quartz glass crucible has a molybdenum-containing substance on the whole or a part of the inner surface and/or the outer surface thereof.
摘要翻译：要解决的问题：提供一种能够通过特别使用大口径石英玻璃坩埚拉动硅单晶时能够抑制内表面上的结晶物质的剥离的石英玻璃坩埚，毒性小，易于处理及其制造方法，并提供一种制造硅单晶的方法。解决方案：石英玻璃坩埚在其内表面和/或其外表面的整个或一部分上具有含钼物质。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2006021985A Quartz crucible 审中-公开
标题翻译： QUARTZ CRUCIBLE
公开(公告)号：JP2006021985A
公开(公告)日：2006-01-26
申请号：JP2004381927
申请日：2004-12-28
申请人： Kuramoto Seisakusho Co Ltd , 株式会社倉元製作所
发明人： WATABE HIROYUKI , FUJISHIRO MASARU , HASHIMOTO HISAHIDE , SANPEI KEIKO
IPC分类号： C30B29/06 , C03B20/00 , C30B15/10
CPC分类号： C03B19/095 , C03B2201/40 , C03B2201/54 , Y02P40/57
摘要： PROBLEM TO BE SOLVED: To provide a quartz crucible where the reaction between the quartz crucible and molten silicon is controlled for reducing oxygen concentration in a silicon single crystal and where the yield of the silicon single crystal is excellent. SOLUTION: A crystalline layer having a thickness of 30-150 μm from the inside surface of the quartz crucible and containing barium and a crystallization inhibitor is formed on the inside surface of the quartz crucible. The penetrating amount of oxygen into the silicon single crystal can be controlled to be low by reducing the dissolving amount between the quartz crucible and the molten silicon and then the yield of the silicon single crystal is increased. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供石英坩埚，其中石英坩埚和熔融硅之间的反应被控制以降低硅单晶中的氧浓度，并且硅单晶的产率优异。解决方案：在石英坩埚的内表面上形成从石英坩埚的内表面形成含有钡和结晶抑制剂的厚度为30-150μm的结晶层。通过降低石英坩埚和熔融硅之间的溶解量，可以将氧进入硅单晶的渗透量控制得较低，然后提高硅单晶的产率。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2001188048A INSPECTION METHOD FOR PINHOLE 失效
公开(公告)号：JP2001188048A
公开(公告)日：2001-07-10
申请号：JP37449599
申请日：1999-12-28
申请人： KURAMOTO SEISAKUSHO CO LTD
发明人： SUZUKI TADAKATSU , TAKAHASHI YUKI , SAITO NAOYUKI
IPC分类号： G01N21/894
摘要： PROBLEM TO BE SOLVED: To provide an inspection method, for a pinhole, in which the pinhole can be inspected safely inside an ordinary illuminated room, in which a judgment reference conforming to an actual environment or an actual condition in its inspection can be set and in which the pinhole can be detected not only simply but also with high accuracy and at high speed according to a hole diameter zone. SOLUTION: In the method, the number of pinholes and their hole diameters are inspected by image-processing image data which is obtained in such a way that a beam of light which is transmitted through the pinhole 3 existing in a light-shielding thin film out of beams of light with which one face of a light-shielding thin film substrate 2 is irradiated from a light source 1 is photographed by an image receiving sensor 4 in a position facing the light source 1. In an optical device which is provided at an apparatus in advance, a relationship between the measured value of the hole diameter of the pinhole and a pixel which corresponds to the pinhole in image data acquired by the image receiving sensor is stored as a correlation approximate equation. When the pinhole is inspected, the number of pixels corresponding to the pinhole is substituted into the correlation approximate equation. The hole diameter of the pinhole is calculated. The number of pinholes is counted according to the hole diameter zone of the pinhole.

5. 发明专利

JP2012150295A Ag REFLECTOR 审中-公开
标题翻译： Ag反射器
公开(公告)号：JP2012150295A
公开(公告)日：2012-08-09
申请号：JP2011009266
申请日：2011-01-19
申请人： Kuramoto Seisakusho Co Ltd , 株式会社倉元製作所
发明人： ARAMAKI KENICHIRO , CHIBA RYO , TAKAHASHI KUNIHARU
IPC分类号： G02B5/08 , C23C14/06 , G02F1/13357
摘要： PROBLEM TO BE SOLVED: To provide an Ag reflector which has optical characteristics that show high reflectance from a visible region to an infrared region, has adhesiveness that can suppress peeling even when being bent, has high resistance, and can simplify a facility for film formation by sputtering, and to provide a method for manufacturing the same.SOLUTION: The Ag reflector includes a stainless substrate, an adhesion layer which is provided on the surface of the stainless substrate and is formed of an NiW film, a reflecting layer which is provided on the surface of the adhesion layer and is formed of an Ag film, a first ITO film provided on the surface of the reflecting layer, a second ITO film provided on the surface of the first ITO film, and an enhanced reflection film which is formed of an SiOfilm and an NbOfilm provided on the surface of the second ITO film in this order.
摘要翻译：要解决的问题：为了提供具有从可见区域到红外区域显示高反射率的光学特性的Ag反射器，即使弯曲时也具有抑制剥离的粘合性，具有高电阻，并且可以简化设备用于通过溅射成膜，并提供其制造方法。解决方案：Ag反射器包括不锈钢基板，粘合层，其设置在不锈钢基板的表面上并由NiW膜形成，反射层设置在粘合层的表面上并形成的Ag膜，设置在反射层的表面上的第一ITO膜，设置在第一ITO膜的表面上的第二ITO膜和由SiO 2 膜和以这种顺序设置在第二ITO膜的表面上的Nb 2 O 5 。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2009230935A Forming method of multilayered film, multilayered film, and semiconductor device or liquid crystal device 审中-公开
标题翻译：多层膜，多层膜和半导体器件或液晶装置的形成方法
公开(公告)号：JP2009230935A
公开(公告)日：2009-10-08
申请号：JP2008072574
申请日：2008-03-19
申请人： Iwate Univ , Japan Science & Technology Agency , Kuramoto Seisakusho Co Ltd , Onizawa Fine Product:Kk , 国立大学法人岩手大学 , 有限会社鬼沢ファインプロダクト , 株式会社倉元製作所 , 独立行政法人科学技術振興機構
发明人： MICHIGAMI OSAMU , ODAJIMA SATOSHI , SATAKE HIROMITSU , MUTO TAKASHI , MICHIGAMI YOKO
IPC分类号： H01B13/00 , B32B9/00 , C23C14/34 , H01B5/14
摘要： PROBLEM TO BE SOLVED: To provide a forming method of a multilayered film, capable of easily forming a flexible transparent film excellent in weatherability and corrosion resistance. SOLUTION: In this forming method of the multilayered film, a plurality of materials made of different components are laminated and mounted on one electrode for sputtering, a separating plate is provided above a boundary between a plurality of the materials, and a substrate is moved on a target while performing discharge to form a multilayered film on the substrate. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供能够容易地形成耐候性和耐腐蚀性优异的柔性透明膜的多层膜的形成方法。解决方案：在该多层膜的这种形成方法中，将由不同组分制成的多种材料层叠并安装在一个用于溅射的电极上，在多个材料之间的边界之上设置分离板，并且将基板在进行放电的同时在靶上移动以在基板上形成多层膜。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2007225670A Probe substrate for flat panel display inspection 有权
标题翻译：用于平板显示检查的探头基板
公开(公告)号：JP2007225670A
公开(公告)日：2007-09-06
申请号：JP2006043607
申请日：2006-02-21
申请人： Kuramoto Seisakusho Co Ltd , Yunikon Kk , ユニコン株式会社 , 株式会社倉元製作所
发明人： OKUNO TOSHIO , FUJIMAKI YUKO , IWABUCHI OSAMU , TAMAGAWA YUSHI
IPC分类号： G09F9/00
摘要： PROBLEM TO BE SOLVED: To provide a probe substrate for flat panel display inspection that prevents expansion and contraction of a probe substrate made of a conventional resin film due to heat and humidity and a resulting pitch error of a bump for pressure contact; and prevents variance in height of the bump to bring the bump into sound pressure contact with an electrode of a flat display panel and properly align the bump for pressure contact and the electrode with each other. SOLUTION: The probe substrate 6D is formed of a transparent glass-made plate 6C and fine unevenness 10 is formed on a front end surface 13 of the glass-made plate 6C to make the front end surface translucent; and a front end edge 7 of the transparent glass-made probe substrate 6D and a side end edge of the flat panel display 2 are made to overlap each other, and the bump 14 for pressure contact of the probe substrate 6D and the electrode of the flat panel display are aligned with each other through the transparent glass-made plate front end edge 7 inside the translucent surface. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于平板显示检查的探针基板，其防止由于热和湿度而由常规树脂膜制成的探针基板的膨胀和收缩以及用于压力接触的凸起的所得螺距误差; 并且防止凸起的高度的变化使凸块与平面显示面板的电极发生声压接触，并且将压接凸块和电极彼此适当对准。解决方案：探针基板6D由透明玻璃制成的板6C形成，并且在玻璃制板6C的前端表面13上形成微细凹凸10，以使前端表面为半透明的; 透明玻璃制探针基板6D的前端缘7和平板显示器2的侧端边缘彼此重叠，并且用于与探针基板6D和电极的电极压力接触的凸块14 平板显示器通过半透明表面内的透明玻璃制成的板前端边缘7彼此对准。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2005145731A Crystallized quartz crucible 审中-公开
标题翻译：结晶石墨可溶
公开(公告)号：JP2005145731A
公开(公告)日：2005-06-09
申请号：JP2003382142
申请日：2003-11-12
申请人： Kuramoto Seisakusho Co Ltd , 株式会社倉元製作所
发明人： WATABE HIROYUKI , HOSHIKAWA KEIGO , FUJISHIRO MASARU , ABE CHIKASHI
IPC分类号： C03B20/00 , C30B15/10 , C30B29/06
CPC分类号： C03B19/095 , Y02P40/57
摘要： PROBLEM TO BE SOLVED: To use a quartz crucible for a long time by controlling the concentration of barium and the content of OH group in the inner surface layer of the quartz crucible to crystallize the inner surface of the quartz at low concentration of barium. SOLUTION: The inner surface of the crucible is crystallized before silicon is melted by incorporating 100-300 ppm barium in 50-100 μm layer of the inner surface layer of the quartz crucible and controlling the content of OH group to 100--300 μm in the layer containing 100-300 ppm barium. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：通过控制钡的浓度和石英坩埚的内表面层中的OH基含量，长时间使用石英坩埚，使石英的内表面以低浓度的结晶结晶钡。
解决方案：坩埚的内表面在硅熔化之前通过在石英坩埚的内表面层的50-100μm层中掺入100-300ppm的钡而结晶，并将OH基的含量控制在100〜在含有100-300ppm钡的层中为300μm。版权所有（C）2005，JPO＆NCIPI

9. 发明专利

JP2004292214A Manufacturing method of quartz crucible 审中-公开
公开(公告)号：JP2004292214A
公开(公告)日：2004-10-21
申请号：JP2003085214
申请日：2003-03-26
申请人： Kuramoto Seisakusho Co Ltd , 株式会社倉元製作所
发明人： WATABE HIROYUKI , FUJISHIRO MASARU , NAKAJIMA SHINICHI
IPC分类号： C03B20/00 , C30B15/10 , C30B29/06
CPC分类号： Y02P40/57
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a quartz crucible, in which the yield of a silicon single crystal is improved and the deformation of the quartz crucible is suppressed. SOLUTION: The manufacturing method of the quartz crucible is performed by passing gaseous hydrogen at the initial time of melting, stopping gaseous hydrogen in a stage of melting the surface and after that, forming a transparent layer on the inside surface. The OH group content in the outside of the quartz crucible is lowered in this method to decrease the deformation during use at a high temperature. The OH group content in the inside surface transparent layer is also lowered to suppress the surface crystallization to improve the single crystal yield. COPYRIGHT: (C)2005,JPO&NCIPI

10. 发明专利

JP2004292210A Quartz crucible for pulling silicon single crystal 审中-公开
公开(公告)号：JP2004292210A
公开(公告)日：2004-10-21
申请号：JP2003085210
申请日：2003-03-26
申请人： Kuramoto Seisakusho Co Ltd , 株式会社倉元製作所
发明人： WATABE HIROYUKI , FUJISHIRO MASARU , NAKAJIMA SHINICHI
IPC分类号： C03B20/00 , C30B15/10 , C30B29/06
CPC分类号： C03B19/095 , Y02P40/57
摘要： PROBLEM TO BE SOLVED: To enhance the yield of a silicon single crystal and improve the quality of the silicon single crystal in pulling it by melting the corner R portion at a temperature higher than that of the upper part in a method for producing a quartz crucible in contact with a silicon melt.
SOLUTION: In producing the quartz crucible, a silicon melt in contact with the corner R portion of the quartz crucible is melted at a temperature higher than that of a silicon melt in contact with the upper portion; thus, a crucible in which the quartz glass structure of the quartz crucible upper portion in contact with the silicon melt contains an amorphous component in a content lower than that of the corner R portion is yielded. The crystallization rate of the corner R portion exposed to high temperature for a long time becomes low, enhancing the yield in single crystallization. By lowering the melting temperature of the crucible upper portion, the occurrence of liquid-level vibration is prevented and the oxygen concentration in the silicon single crystal is caused to be uniform.
COPYRIGHT: (C)2005,JPO&NCIPI

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式