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1. 发明专利

JP2012091969A Quartz glass crucible and method for manufacturing the same, and method for manufacturing silicon single crystal 审中-公开
标题翻译：石墨玻璃巧克力及其制造方法，以及制造硅单晶的方法
公开(公告)号：JP2012091969A
公开(公告)日：2012-05-17
申请号：JP2010241409
申请日：2010-10-27
申请人： Kuramoto Seisakusho Co Ltd , 株式会社倉元製作所
发明人： FUJISHIRO MASARU , TAKAHASHI FUMIO , ABE CHIKASHI , NAKAJIMA SHINICHI , TSUTSUI SHINOBU , CHIKUI MANABU
IPC分类号： C30B29/06 , C03B20/00 , C30B15/10
摘要： PROBLEM TO BE SOLVED: To provide a quartz glass crucible which is capable of suppressing peeling of a crystallized substance on an inner surface when pulling a silicon single crystal by especially using an large-caliber quartz glass crucible, has less toxicity, and is easy to handle and a method for manufacturing the same, and to provide a method for manufacturing the silicon single crystal.SOLUTION: The quartz glass crucible has a molybdenum-containing substance on the whole or a part of the inner surface and/or the outer surface thereof.
摘要翻译：要解决的问题：提供一种能够通过特别使用大口径石英玻璃坩埚拉动硅单晶时能够抑制内表面上的结晶物质的剥离的石英玻璃坩埚，毒性小，易于处理及其制造方法，并提供一种制造硅单晶的方法。解决方案：石英玻璃坩埚在其内表面和/或其外表面的整个或一部分上具有含钼物质。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2004292214A Manufacturing method of quartz crucible 审中-公开
公开(公告)号：JP2004292214A
公开(公告)日：2004-10-21
申请号：JP2003085214
申请日：2003-03-26
申请人： Kuramoto Seisakusho Co Ltd , 株式会社倉元製作所
发明人： WATABE HIROYUKI , FUJISHIRO MASARU , NAKAJIMA SHINICHI
IPC分类号： C03B20/00 , C30B15/10 , C30B29/06
CPC分类号： Y02P40/57
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a quartz crucible, in which the yield of a silicon single crystal is improved and the deformation of the quartz crucible is suppressed. SOLUTION: The manufacturing method of the quartz crucible is performed by passing gaseous hydrogen at the initial time of melting, stopping gaseous hydrogen in a stage of melting the surface and after that, forming a transparent layer on the inside surface. The OH group content in the outside of the quartz crucible is lowered in this method to decrease the deformation during use at a high temperature. The OH group content in the inside surface transparent layer is also lowered to suppress the surface crystallization to improve the single crystal yield. COPYRIGHT: (C)2005,JPO&NCIPI

3. 发明专利

JP2004292210A Quartz crucible for pulling silicon single crystal 审中-公开
公开(公告)号：JP2004292210A
公开(公告)日：2004-10-21
申请号：JP2003085210
申请日：2003-03-26
申请人： Kuramoto Seisakusho Co Ltd , 株式会社倉元製作所
发明人： WATABE HIROYUKI , FUJISHIRO MASARU , NAKAJIMA SHINICHI
IPC分类号： C03B20/00 , C30B15/10 , C30B29/06
CPC分类号： C03B19/095 , Y02P40/57
摘要： PROBLEM TO BE SOLVED: To enhance the yield of a silicon single crystal and improve the quality of the silicon single crystal in pulling it by melting the corner R portion at a temperature higher than that of the upper part in a method for producing a quartz crucible in contact with a silicon melt.
SOLUTION: In producing the quartz crucible, a silicon melt in contact with the corner R portion of the quartz crucible is melted at a temperature higher than that of a silicon melt in contact with the upper portion; thus, a crucible in which the quartz glass structure of the quartz crucible upper portion in contact with the silicon melt contains an amorphous component in a content lower than that of the corner R portion is yielded. The crystallization rate of the corner R portion exposed to high temperature for a long time becomes low, enhancing the yield in single crystallization. By lowering the melting temperature of the crucible upper portion, the occurrence of liquid-level vibration is prevented and the oxygen concentration in the silicon single crystal is caused to be uniform.
COPYRIGHT: (C)2005,JPO&NCIPI

4. 发明专利

JP2010184819A Quartz glass crucible for pulling silicon single crystal and method for producing silicon single crystal 有权
标题翻译：用于拉丝硅单晶的QUARTZ玻璃纤维和生产硅单晶的方法
公开(公告)号：JP2010184819A
公开(公告)日：2010-08-26
申请号：JP2009028444
申请日：2009-02-10
申请人： Kuramoto Seisakusho Co Ltd , 株式会社倉元製作所
发明人： FUJISHIRO MASARU , TAKAHASHI FUMIO , ABE CHIKASHI , NAKAJIMA SHINICHI , TSUTSUI SHINOBU
IPC分类号： C30B29/06 , C03B20/00 , C30B15/10
CPC分类号： C03B19/095 , C30B15/10 , C30B29/06 , Y02P40/57 , Y10T117/1032
摘要： PROBLEM TO BE SOLVED: To provide a quartz glass crucible for pulling a silicon single crystal preventing the peeling off of a crystallized substance caused in spots on its inner surface, preventing the formation of a gas release hole due to partial micro-peeling of a crystal layer when the crystal layer is formed on the entire inner surface, and preventing silicon melt from intruding into a gap between the crystal layer and a glass layer thereunder through the gas release hole due to the micro-peeling, thereby obtaining a high yield, and to provide a method for producing a silicon single crystal by using the crucible. SOLUTION: The crucible has a layer containing a crystallization accelerator on the inner surface. Upon pulling a silicon single crystal, spot-like crystallization regions 5 are formed by the crystallization accelerator on the inner surface. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于拉拔硅单晶的石英玻璃坩埚，其防止在其内表面上产生斑点的结晶物质的剥离，防止由于部分微剥离而形成气体释放孔当在整个内表面上形成晶体层时，由于微剥离，防止硅熔体通过气体释放孔侵入到晶体层和下面的玻璃层之间的间隙中，从而获得高的晶体层并且提供通过使用坩埚来制造单晶硅的方法。解决方案：坩埚在内表面上具有含有结晶促进剂的层。在拉出硅单晶时，在内表面上由结晶促进剂形成点状结晶区域5。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2004292211A Method of forming transparent layer on inside surface of quartz crucible 审中-公开
标题翻译：在QUARTZ可溶性表面形成透明层的方法
公开(公告)号：JP2004292211A
公开(公告)日：2004-10-21
申请号：JP2003085211
申请日：2003-03-26
申请人： Kuramoto Seisakusho Co Ltd , 株式会社倉元製作所
发明人： WATABE HIROYUKI , FUJISHIRO MASARU , NAKAJIMA SHINICHI
IPC分类号： C03B20/00 , C30B15/10 , C30B29/06
CPC分类号： C03B19/095 , Y02P40/57
摘要： PROBLEM TO BE SOLVED: To provide a technique for forming a transparent layer on the inside surface of a quartz crucible and a method of inexpensively manufacturing the quartz crucible for improving the yield of a silicon single crystal. SOLUTION: The inside surface of quartz powder is sintered at first in the melting in the quartz crucible to set bulk density from 1.7 to 1.8. Next the transparent layer is formed on the inside surface of the quartz crucible by rapidly increasing the melting temperature. When the bulk density is set from 1.7 to 1.8, the thickness of the sintered layer is increased and the thickness of the transparent layer is also increased by passing gaseous argon. When the temperature is rapidly elevated, the size of the bubbles in the transparent layer is decreased by passing gaseous hydrogen to prevent the expansion. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供在石英坩埚的内表面上形成透明层的技术和廉价制造石英坩埚以提高硅单晶的产率的方法。
解决方案：石英粉末的内表面首先在石英坩埚的熔化中烧结，使堆积密度为1.7至1.8。接着，通过快速提高熔融温度，在石英坩埚的内表面上形成透明层。当体积密度为1.7〜1.8时，烧结层的厚度增加，通过气态氩也增加透明层的厚度。当温度迅速升高时，通过使气态氢气阻止膨胀，透明层中气泡的尺寸减小。版权所有（C）2005，JPO＆NCIPI

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