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1. 发明专利

JP2006021985A Quartz crucible 审中-公开
标题翻译： QUARTZ CRUCIBLE
公开(公告)号：JP2006021985A
公开(公告)日：2006-01-26
申请号：JP2004381927
申请日：2004-12-28
申请人： Kuramoto Seisakusho Co Ltd , 株式会社倉元製作所
发明人： WATABE HIROYUKI , FUJISHIRO MASARU , HASHIMOTO HISAHIDE , SANPEI KEIKO
IPC分类号： C30B29/06 , C03B20/00 , C30B15/10
CPC分类号： C03B19/095 , C03B2201/40 , C03B2201/54 , Y02P40/57
摘要： PROBLEM TO BE SOLVED: To provide a quartz crucible where the reaction between the quartz crucible and molten silicon is controlled for reducing oxygen concentration in a silicon single crystal and where the yield of the silicon single crystal is excellent. SOLUTION: A crystalline layer having a thickness of 30-150 μm from the inside surface of the quartz crucible and containing barium and a crystallization inhibitor is formed on the inside surface of the quartz crucible. The penetrating amount of oxygen into the silicon single crystal can be controlled to be low by reducing the dissolving amount between the quartz crucible and the molten silicon and then the yield of the silicon single crystal is increased. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供石英坩埚，其中石英坩埚和熔融硅之间的反应被控制以降低硅单晶中的氧浓度，并且硅单晶的产率优异。解决方案：在石英坩埚的内表面上形成从石英坩埚的内表面形成含有钡和结晶抑制剂的厚度为30-150μm的结晶层。通过降低石英坩埚和熔融硅之间的溶解量，可以将氧进入硅单晶的渗透量控制得较低，然后提高硅单晶的产率。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2005306708A Quartz crucible 审中-公开
标题翻译： QUARTZ CRUCIBLE
公开(公告)号：JP2005306708A
公开(公告)日：2005-11-04
申请号：JP2004244479
申请日：2004-08-24
申请人： Kuramoto Seisakusho Co Ltd , 株式会社倉元製作所
发明人： WATABE HIROYUKI , SANPEI KEIKO , HASHIMOTO HISAHIDE , KO CHIKAAKI , UDA SATOSHI
IPC分类号： C03B20/00 , C30B15/10 , C30B29/06
CPC分类号： Y02P40/57
摘要： PROBLEM TO BE SOLVED: To prevent exfoliation of crystal chips from the inner surface of a quartz crucible during use in order to improve the yield of a silicon single crystal. SOLUTION: The number of brown marks causing exfoliation is reduced by forming a layer, which is highly reactive with a silicon melt in comparison with its inner layer, within a layer of 150 μm from the surface of the quartz crucible so as to make the erosion speed higher than the formation speed of a crystal nucleus. Concretely, the inner surface layer highly reactive with the silicon melt is formed from synthetic quartz glass or natural quartz glass containing alkali metals such as lithium, sodium or potassium and alkaline earth metals such as beryllium, magnesium, calcium, strontium or barium in an amount of ≤100 ppm. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了在使用期间防止晶体芯片从石英坩埚的内表面剥离，以提高硅单晶的产率。解决方案：在与石英坩埚的表面150μm的层内形成与其内层相比，与硅熔体反应性高的层，导致剥离的棕色标记的数量减少，从而使侵蚀速度高于晶核的形成速度。具体地说，与硅熔体高度反应的内表面层由合成石英玻璃或含有碱金属如锂，钠或钾的天然石英玻璃和碱土金属如铍，镁，钙，锶或钡的量形成， ≤100ppm。版权所有（C）2006，JPO＆NCIPI

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