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1. 发明专利

JP2004260023A Process for depositing ferroelectric film 审中-公开
公开(公告)号：JP2004260023A
公开(公告)日：2004-09-16
申请号：JP2003050182
申请日：2003-02-27
申请人： Benesol Inc , Japan Pionics Co Ltd , Sci Technol Kk , Tokyo Institute Of Technology , サイエンステクノロジー株式会社 , 国立大学法人東京工業大学 , 日本パイオニクス株式会社 , 株式会社ベネソル
发明人： FUNAKUBO HIROSHI , INOUE YOSHIHISA , NANBA TORU , YAMAGUCHI TAKAHIRO , TAKAMATSU YUKICHI , YONEYAMA GAKUO , ASANO AKIYOSHI , IWATA MITSUHIRO
IPC分类号： C23C16/18 , C23C16/448 , H01L21/31 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide a process for depositing a ferroelectric film of PZT, BST, SBT, PLZT, or the like, having excellent quality and purity in which mixture of particles due to deposition of a solid CVD material generated during supply of vaporized material is reduced.
SOLUTION: The solid CVD material is dissolved into tetrahydrofuran and admixed with an organic solvent having a boiling point higher than that of tetrahydrofuran in the prestage of a vaporizer. It is then vaporized and supplied to a semiconductor production system where a ferroelectric film is deposited.
COPYRIGHT: (C)2004,JPO&NCIPI

2. 发明专利

JPH08218186A VAPOR PHASE ETCHING DEVICE AND VAPOR PHASE ETCHING METHOD 失效
公开(公告)号：JPH08218186A
公开(公告)日：1996-08-27
申请号：JP2305295
申请日：1995-02-10
申请人： SCI TECHNOL KK
发明人： IKEGAMI KAORU
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE: To enable the etching end point detection excellent in reliability by forming waste gas after vapor phase etching into a plasma, analyzing plasma light radiated from the plasma gas and controlling the inflow rate of a reactive gas. CONSTITUTION: In this etching method, a reactant gas such as CIF3 is supplied through a supply pipe 6 to an etching chamber 1 in which a substrate 2 such as silicon wafer is placed and the pressure of the etching chamber 1 is adjusted to a prescribed value with a dry pump 8a and a pressure control unit 7a and then, the substrate 2 is subjected to plasmaless etching. At this time, waste gas discharged from the etching chamber 1 is introduced into a plasma forming chamber 3 to form the waste gas into a plasma with high frequency voltage and plasma light radiated from the plasma gas is introduced through optical fiber 11 into an emission spectral analyzer 4 to analyze spectral intensity of the reactant gas component and then, voltage corresponding to the spectral intensity is transmitted to a process controller 5. The etching end point is detected at a point when this voltage increases and reaches the maximum and the supply of the reactant gas is stopped through operating an air valve 28. Thus, the etching accuracy can be improved.

3. 发明专利

JP2007160239A Glass hard disk-washing device 审中-公开
标题翻译：玻璃硬盘清洗装置
公开(公告)号：JP2007160239A
公开(公告)日：2007-06-28
申请号：JP2005361185
申请日：2005-12-15
申请人： Daitron Technology Co Ltd , Sci Technol Kk , Kazuo Tanabe , サイエンステクノロジー株式会社 , ダイトロンテクノロジー株式会社 , 和夫田▲邉▼
发明人： TANABE KAZUO
IPC分类号： B08B1/04 , B08B1/02 , B08B3/02 , B08B7/04 , G11B5/84
摘要： PROBLEM TO BE SOLVED: To provide a glass hard disk-washing device which efficiently washes glass hard disks which are different in size.
SOLUTION: A hard disk (1) sent out from a loader cassette (2) is conveyed with a first water bearing (6). A first detection gap (8) is provided, and a second water bearing (7) is connected to the first detection gap (8), and the hard disk (1) is conveyed to a scrub washing part. In the scrub washing part, the hard disk (1) contacts the slant surface of a drive roller (10) with a taper and rotates. The hard disk posterior to the scrub washing is accommodated in an unloader cassette (31) with a fourth water bearing (26) connected to a third water bearing (24) via a second detection gap (27). There are sensors (9) and (29), which detect the hard disk from its lateral direction, in the first detection gap (8) and in the second detection gap (27), respectively.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种高效洗涤尺寸不同的玻璃硬盘的玻璃硬盘清洗装置。
解决方案：从装载机盒（2）发出的硬盘（1）用第一水轴承（6）输送。提供第一检测间隙（8），并且第二水轴承（7）连接到第一检测间隙（8），并且将硬盘（1）输送到洗涤洗涤部分。在洗涤洗涤部分中，硬盘（1）与锥形的驱动辊（10）的倾斜表面接触并旋转。洗涤洗涤后面的硬盘容纳在卸载器盒（31）中，第四水轴承（26）经由第二检测间隙（27）连接到第三水轴承（24）。传感器（9）和（29）分别在第一检测间隙（8）和第二检测间隙（27）中从其横向检测硬盘。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2006295020A Apparatus and method for forming oxide film 审中-公开
标题翻译：用于形成氧化膜的装置和方法
公开(公告)号：JP2006295020A
公开(公告)日：2006-10-26
申请号：JP2005116529
申请日：2005-04-14
申请人： Sci Technol Kk , サイエンステクノロジー株式会社
发明人： YOSHIMURA TOSHIAKI , OGAWA YOSHIAKI , MINOWA HIROYUKI , MORII MITSURU , NAITO YASUSHI
IPC分类号： H01L21/31 , C23C16/40 , C23C16/448 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and a method for forming an oxide film wherein a high-quality oxide film can be formed and management is facilitated.
SOLUTION: A vaporizer 21 provided externally to a pressure-resistant container 13 generates water vapor, which is in turn supplied into warmed and pressurized the pressure-resistant container 13. Therefore, the atmosphere around a silicon wafer A is constant throughout all the steps of an oxide film formation process, and an oxide film formed over the silicon wafer A is of high quality. Since water is used, the management of a quantity consumed and safe management are facilitated.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种形成氧化膜的装置和方法，其中可以形成高质量的氧化物膜并且便于管理。解决方案：设置在耐压容器13外部的蒸发器21产生水蒸汽，水蒸气又被供给加热和加压耐压容器13.因此，硅晶片A周围的气氛在所有氧化膜形成工艺的步骤和形成在硅晶片A上的氧化膜是高质量的。由于使用水，便于管理消耗量和安全管理。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2004260024A Vapor phase epitaxial growth process 审中-公开
标题翻译：蒸气相外延生长过程
公开(公告)号：JP2004260024A
公开(公告)日：2004-09-16
申请号：JP2003050183
申请日：2003-02-27
申请人： Benesol Inc , Japan Pionics Co Ltd , Sci Technol Kk , Tokyo Inst Of Technol , サイエンステクノロジー株式会社 , 日本パイオニクス株式会社 , 東京工業大学長 , 株式会社ベネソル
发明人： FUNAKUBO HIROSHI , INOUE YOSHIHISA , NANBA TORU , YAMAGUCHI TAKAHIRO , TAKAMATSU YUKICHI , TONARI KAZUAKI
IPC分类号： C23C16/40 , C23C16/52 , H01L21/31 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide a vapor phase epitaxial growth process producing a ferroelectric film of PZT, BST, SBT or PLZT having excellent quality and purity by supplying a preset quantity of a solid CVD material to a semiconductor production system over a long time regardless of the adhesion state of the solid CVD material to the material channel in a vaporizer even when a solid CVD material dissolved into an organic solvent is employed.
SOLUTION: Each vaporization gas of a CVD material being employed for depositing the ferroelectric film is fed to a vaporization gas mixing means while measuring the concentration and/or flow rate of at least one kind of CVD material using FTIR. Mixed vaporization gas is fed to the semiconductor production system where vapor phase epitaxial growth is conducted.
COPYRIGHT: (C)2004,JPO&NCIPI
摘要翻译：要解决的问题：为了提供通过向半导体生产系统提供预定量的固体CVD材料，通过在半导体生产系统中提供预定量的固体CVD材料来提供产生具有优良品质和纯度的PZT，BST，SBT或PLZT的铁电薄膜的气相外延生长工艺即使使用溶解在有机溶剂中的固体CVD材料，无论固体CVD材料在蒸发器中的材料通道的粘附状态如何长。解决方案：使用FTIR测量至少一种CVD材料的浓度和/或流速，将用于沉积铁电体膜的CVD材料的每个气化气体进料到蒸发气体混合装置。混合汽化气体被供给到进行气相外延生长的半导体生产系统中。版权所有（C）2004，JPO＆NCIPI

6. 发明专利

JP2004259905A Reactor for vapor growth deposition 审中-公开
公开(公告)号：JP2004259905A
公开(公告)日：2004-09-16
申请号：JP2003048489
申请日：2003-02-26
申请人： Benesol Inc , Japan Pionics Co Ltd , Sci Technol Kk , Tokyo Institute Of Technology , サイエンステクノロジー株式会社 , 国立大学法人東京工業大学 , 日本パイオニクス株式会社 , 株式会社ベネソル
发明人： FUNAKUBO HIROSHI , INOUE YOSHIHISA , NANBA TORU , TAKAMATSU YUKICHI , TONARI KAZUAKI , YAMAGUCHI TAKAHIRO
IPC分类号： C23C16/44 , C23C16/448 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To enable formation of a uniform film including no particles by preventing that particles are generated due to the flow of gas into a substrate transfer port within a reaction chamber and thereby uniform flow of gas at a cylindrical and linear nozzle is prevented.
SOLUTION: A transfer port cover (shielding means) 16 is attached in the side of reaction chamber 11 of a transfer gate valve 3 for separating a vacuum load lock chamber 4 and the reaction chamber 11. This transfer port cover 16 is operated vertically with an air cylinder 15 from an external side of the reaction chamber 11 through a transfer port cover holding rod 13 and a vacuum bellow flange 14. Moreover, since four net type members or hole opening members 17 are provided as the unifying means at the internal side of the nozzle of reactor, a uniform film can be formed with less particles.
COPYRIGHT: (C)2004,JPO&NCIPI

7. 发明专利

JP2002134474A PLASMA TREATMENT DEVICE 失效
公开(公告)号：JP2002134474A
公开(公告)日：2002-05-10
申请号：JP2000321486
申请日：2000-10-20
申请人： SCI TECHNOL KK
发明人： KUBOTA NAOKI
IPC分类号： B01J19/08 , C23C16/513 , C23F4/00 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To enable stable treatment by preventing the generation of particles. SOLUTION: A plasma treatment apparatus, which has an inductively coupled type of plasma generator 30, is equipped with temperature keeping means 21 and 22, which keep the temperature of the section facing a treatment chamber of the inductively coupled type of plasma generator part 30 at a prescribed temperature or higher.

8. 发明专利

JP2002124399A PLASMA GENERATION DEVICE 失效
公开(公告)号：JP2002124399A
公开(公告)日：2002-04-26
申请号：JP2000314281
申请日：2000-10-13
申请人： SCI TECHNOL KK
发明人： KUBOTA NAOKI
IPC分类号： H05H1/46 , C23C16/507 , H01L21/20 , H01L21/205 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma generating device that has simple structure and low cost of manufacture and maintenance and is capable of adjustment of the uniformity of the processing substrate. SOLUTION: In the plasma generating device of inductively coupled type, a control means 10, that includes induction coils 11, 12 and controls the current flowing in each coil is equipped.

9. 发明专利

JPH118204A HIGH SPEED LAMP-HEATING PROCESSOR 失效
公开(公告)号：JPH118204A
公开(公告)日：1999-01-12
申请号：JP19172597
申请日：1997-06-13
申请人： SCI TECHNOL KK
发明人： IKEGAMI KAORU , KUBOTA NAOKI
IPC分类号： H01L21/26
摘要： PROBLEM TO BE SOLVED: To obtain a high speed lamp-heating processor, is which not only the temperature distribution control of a wafer in the radial direction but also a delicate temperature variation control in the circumferential direction and temperature control of an asymmetric wafer can be carried out by arranging circular lamps concentrically, in order to control the temperature distribution of a circular object optimally through heating. SOLUTION: A single circular lamp 1 is divided and the lamps being divided are connected, respectively, with a power controller in order to control the temperature distribution, when a wafer is heat treated by supplying a gas. Since the temperature of the wafer drops on the upstream side of the gas flow, the circular lamp 1 is divided and a noncontact-fiber type thermometer converts the wafer temperature on the upstream side of the gas flow into a voltage or current signal. The signal is employed by a power controller for controlling power supply to the upstream side lamps 1a, 1b, and the wafer temperature is controlled. Since the circular lamp 1 is employed especially for heat treating a circular wafer, temperature distribution in the wafer is improved.

10. 发明专利

JP2007149929A Single wafer pulling and drying apparatus 审中-公开
标题翻译：单辊牵引和干燥装置
公开(公告)号：JP2007149929A
公开(公告)日：2007-06-14
申请号：JP2005341775
申请日：2005-11-28
申请人： Daitron Technology Co Ltd , Sci Technol Kk , Kazuo Tanabe , サイエンステクノロジー株式会社 , ダイトロンテクノロジー株式会社 , 和夫田▲邉▼
发明人： TANABE KAZUO
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To surely dry large size wafers.
SOLUTION: A drying chamber (2) is provided at the upper side of a dip tank (1) to and from which hot pure water is charged and discharged under the overflow condition. This drying chamber (2) has a heater (7) for heating the wafer which has been just pulled up from the dip tank (1) up to about 150° to 400°C, and an N
2 gas injection nozzle (9) for setting the inside of chamber to the N
2 atmosphere. Moreover, a vapor condensating means is provided just above the dip tank (1) in order to prevent the vapor generated from the overflow surface to rise within the drying chamber (2). The wafer pulled up from the overflow surface is heated up to higher temperature with the heater (7), is separated from water at the surface thereof with a surface tension, and is dried up in the state where no particle is adhered.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：确定干燥大尺寸晶圆。解决方案：在浸渍槽（1）的上侧设置有干燥室（2），在这种溢流状态下，热纯水被充满和排出。该干燥室（2）具有加热器（7），该加热器（7）用于加热刚刚从浸渍槽（1）拉出的晶片直到约150℃至400℃，并且N 2 用于将室内设置到N 2 气氛的气体喷射喷嘴（9）。此外，在浸渍槽（1）正上方设置蒸气冷凝装置，以防止从溢流面产生的蒸气在干燥室（2）内升高。从加热器（7）将从溢流表面拉出的晶片加热到更高的温度，与其表面的水分离表面张力，并且在没有颗粒附着的状态下干燥。版权所有（C）2007，JPO＆INPIT

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