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81. 发明专利

JP2014047416A Vapor deposition apparatus, vapor deposition method, organic el display, and organic el lighting device 审中-公开
标题翻译：蒸气沉积装置，蒸气沉积方法，有机EL显示器和有机EL照明装置
公开(公告)号：JP2014047416A
公开(公告)日：2014-03-17
申请号：JP2012193573
申请日：2012-09-03
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社 , Kyushu Univ , 国立大学法人九州大学
发明人： EOMO TOMOHIKO , TSUGITA KOHEI , ADACHI CHIHAYA
IPC分类号： C23C14/24 , H01L51/50 , H05B33/10
CPC分类号： C23C14/24 , C23C14/228 , H01L51/001 , H01L51/56
摘要： PROBLEM TO BE SOLVED: To provide a vapor deposition apparatus capable of enhancing the using efficiency of an organic material.SOLUTION: A vapor deposition apparatus 2 comprises: a first vapor deposition portion for injecting a gas containing a host material toward a treated face of a moving substrate G, to vapor-deposit an organic film on the treatment surface of the substrate G; and a second vapor deposition portion arranged at a front stage or a back stage of a first vapor deposition portion, for injecting a gas containing a quest material toward the treated surface of the moving substrate G so that the organic film is vapor-deposited in a line shape on the treated surface of the substrate G.
摘要翻译：要解决的问题：提供一种能够提高有机材料的使用效率的气相沉积设备。方法：蒸镀装置2包括：第一蒸镀部分，用于将含有主体材料的气体朝向处理面移动衬底G，以在衬底G的处理表面上气相沉积有机膜; 以及布置在第一蒸镀部的前段或后台的第二蒸镀部，其向所述移动基板G的被处理面喷射含有任意材料的气体，使得有机膜以在基板G的处理表面上的线形。

82. 发明专利

JPWO2012046672A1 成膜装置及び成膜材料供給方法有权
公开(公告)号：JPWO2012046672A1
公开(公告)日：2014-02-24
申请号：JP2012537689
申请日：2011-10-03
申请人：東京エレクトロン株式会社
发明人：小野　裕司 , 裕司小野 , 林　輝幸 , 輝幸林 , 裕是金子 , 裕是金子
IPC分类号： C23C14/54 , C23C14/12 , H01L51/50 , H05B33/10
CPC分类号： C23C14/24 , C03C17/002 , C23C14/543 , H01L51/0008
摘要：蒸気発生部内部の圧力上昇、温度上昇を抑えることができ、精密な温度制御を行うことができる成膜装置。ガラス基板Gに成膜処理を行う成膜装置に、ガラス基板Gを収容する処理室5と、成膜材料を加熱することによって、該成膜材料の蒸気を発生させる蒸気発生部1と、蒸気発生部1で発生させた成膜材料の蒸気を搬送ガスと共に処理室5へ搬送するための搬送路21と、排気路22と、搬送路の途中に設けられた調整弁装置31と、排気路22の途中に設けられた排気弁装置32とを、蒸気発生部1の温度を検出する材料温度検出部64と、第1蒸気量検出部23と、成膜材料を加熱する場合、蒸気発生部1の温度の高低に応じて、排気弁装置32の開閉動作を制御し、成膜材料を前記処理室へ搬送する場合、第1蒸気量検出部23で検出された蒸気量が安定した場合、排気弁装置32を閉鎖し、調整弁装置31を開放させる制御部8とを備える。

83. 发明专利

JP5410618B2 Deposition apparatus, deposition method, and manufacturing method of the organic electroluminescence display device 有权
公开(公告)号：JP5410618B2
公开(公告)日：2014-02-05
申请号：JP2012549744
申请日：2011-12-14
申请人：シャープ株式会社
发明人：通園田 , 伸一川戸 , 智井上 , 智志橋本
IPC分类号： C23C14/24 , H01L51/50 , H05B33/10
CPC分类号： H01L51/56 , C23C14/12 , C23C14/24 , C23C14/243 , H01L27/3211 , H01L51/0008 , H01L51/0011 , H01L51/0012 , H01L51/0021 , H01L51/5203 , H01L51/5253 , H05B33/04 , H05B33/10

84. 发明专利

JP2014007387A Deposition apparatus and deposition method, or manufacturing method of laminated film or light-emitting element, or shadow mask cleaning method 有权
标题翻译：沉积装置和沉积方法或层压膜或发光元件的制造方法或阴影掩模清洗方法
公开(公告)号：JP2014007387A
公开(公告)日：2014-01-16
申请号：JP2013097456
申请日：2013-05-07
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： JINBO YASUHIRO , EGUCHI SHINGO , YAMAZAKI SHUNPEI
IPC分类号： H01L21/304 , C23C14/04 , H01L51/50 , H05B33/04 , H05B33/10 , H05B33/12 , H05B33/28
CPC分类号： C23C14/24 , C23C14/042 , C23C14/12 , C23C14/562 , C23C14/568 , C23C14/5873 , H01J37/32568 , H01J37/32834 , H01J2237/332 , H01J2237/335 , H01L21/67 , H01L27/1266 , H01L51/001 , H01L51/0058 , H01L51/0072 , H01L51/50 , H01L51/56
摘要： PROBLEM TO BE SOLVED: To provide a deposition apparatus which can deposit a film by using a shadow mask and remove a deposition material adhered to the shadow mask; and provide a deposition method using the deposition apparatus and a method of removing the deposition material.SOLUTION: A deposition apparatus comprises: deposition chambers; a removal chamber; two partition valves provided at a distance from each other between the deposition chambers and the removal chamber; and a shadow mask transfer mechanism. The deposition chambers include a vapor-deposition source. The removal chamber includes a parallel plate plasma source and a shadow mask stage. The deposition apparatus has: a deposition mode in which the shadow mask transfer mechanism transfers a shadow mask on which a deposition target body is overlapped to perform deposition on the deposition target body; and a cleaning mode in which the shadow mask supported by the shadow mask stage between an upper electrode and a lower electrode is irradiated with plasma from the plasma source.
摘要翻译：要解决的问题：提供一种通过使用荫罩沉积膜并除去附着在荫罩上的沉积材料的沉积设备; 并提供使用沉积设备的沉积方法和去除沉积材料的方法。解决方案：沉积设备包括：沉积室; 去除室; 两个分隔阀在沉积室和去除室之间设置成彼此间隔一段距离; 和荫罩传送机构。沉积室包括气相沉积源。去除室包括平行板等离子体源和荫罩台。沉积装置具有：阴影传送机构传送其上重叠有沉积靶体的荫罩以在沉积靶体上进行沉积的沉积模式; 并且其中由等离子体源等离子体照射由荫罩平台在上电极和下电极之间支撑的荫罩的清洁模式。

85. 发明专利

JP5381744B2 Depositing a thin film as well as solar cells and the oxide evaporation material 有权
公开(公告)号：JP5381744B2
公开(公告)日：2014-01-08
申请号：JP2010013313
申请日：2010-01-25
申请人：住友金属鉱山株式会社
发明人：能之阿部 , 理一郎和気 , 正和 ▲桑▼原 , 健太郎曽我部 , 梓大城 , 久貴矢田
IPC分类号： C23C14/24 , C04B35/00 , C23C14/08 , H01B5/14 , H01L21/28 , H01L21/285 , H01L31/04
CPC分类号： H01L31/022466 , C04B35/01 , C04B35/6261 , C04B35/638 , C04B2235/3229 , C04B2235/3286 , C04B2235/656 , C04B2235/6562 , C04B2235/6565 , C04B2235/6567 , C04B2235/6585 , C04B2235/6586 , C04B2235/75 , C04B2235/77 , C23C14/086 , C23C14/24 , H01L31/03923 , H01L31/0749 , Y02E10/541 , Y02P70/521 , Y10T428/21
摘要： Provided are an oxide tablet for vapor deposition (oxide evaporation material), and a vapor-deposited thin film and a solar cell formed using the same. The tablet comprises a sintered body which contains indium oxide as a main component and cerium and which is subjected to no surface grinding after sintering, in which CompS/CompA=0.9 to 1.1, where the content of cerium in a surface layer to a depth of 5 μm from a surface of the sintered body is represented by a Ce/In atomic ratio (CompS), and an average value of the content of cerium in the entire sintered body is represented by a Ce/In atomic ratio (CompA).

86. 发明专利

JP5364731B2 Thin film deposition apparatus 有权
公开(公告)号：JP5364731B2
公开(公告)日：2013-12-11
申请号：JP2011000180
申请日：2011-01-04
申请人：三星ディスプレイ株式會社Samsung Display Co.,Ltd.
发明人：鉉淑朴 , 昌睦趙 , 煕哲姜 , 潤美李 , ▲云▼ ▲徹▼ 成 , 鎔燮崔 , 鍾憲金 , 在光柳
IPC分类号： C23C14/24 , H01L51/50 , H05B33/10
CPC分类号： C23C14/24 , C23C14/042 , H01L51/001
摘要： A thin film deposition apparatus that can be simply applied to produce large-sized display devices on a mass scale and that improves manufacturing yield. The thin film deposition apparatus includes a deposition source that discharges a deposition material; a deposition source nozzle unit disposed at a side of the deposition source and including a plurality of deposition source nozzles arranged in a first direction; and a patterning slit sheet disposed opposite to the deposition source nozzle unit and including a plurality of patterning slits arranged in a second direction that is perpendicular to the first direction. A deposition is performed while the substrate or the thin film deposition apparatus moves relative to each other in the first direction, and the deposition source, the deposition source nozzle unit, and the patterning slit sheet are formed integrally with each other.

87. 发明专利

JP2013239441A Vapor deposition device, vapor deposition method, and method for manufacturing organic electroluminescent display device 有权
标题翻译：蒸气沉积装置，蒸气沉积方法和制造有机电致发光显示装置的方法
公开(公告)号：JP2013239441A
公开(公告)日：2013-11-28
申请号：JP2013126930
申请日：2013-06-17
申请人： Sharp Corp , シャープ株式会社
发明人： SONODA TORU , KAWATO SHINICHI , INOUE SATOSHI
IPC分类号： H05B33/10 , C23C14/04 , H01L51/50 , H05B33/04 , H05B33/12 , H05B33/22
CPC分类号： H01L51/0011 , C23C14/042 , C23C14/12 , C23C14/24 , C23C14/50 , C23C16/042 , H01L27/3211 , H01L27/3244 , H01L51/001 , H01L51/56 , H01L2227/323 , H05B33/10
摘要： PROBLEM TO BE SOLVED: To provide a vapor deposition method and a vapor deposition device, capable of forming a vapor deposition pattern on a large-sized substrate, and a method for manufacturing an organic EL display device, in which the vapor deposition method is used.SOLUTION: A vapor deposition device 50 in which a partition wall 26 stands between film formation regions on a film formation substrate 200 includes: a mask unit 80 including a shadow mask 81 and a vapor deposition source 85 fixed in position relative to each other; contacting means 71, 87, 88 for bringing the film formation substrate 200 into contact with the shadow mask 81 via the partition wall 26; and a moving means 70 for relatively moving at least one of the mask unit 80 and the film formation substrate 200 while the contact caused by the contacting means is kept. The partition wall 26 is formed in a stripe shape along a direction in which the moving means relatively moves the at least one of the mask unit and the film formation substrate, and a plurality of the partition walls are formed discontinuously.
摘要翻译：要解决的问题：提供能够在大尺寸基板上形成蒸镀图案的蒸镀法和蒸镀装置以及使用蒸镀法的有机EL显示装置的制造方法解决方案：在成膜基板200上的成膜区域之间分隔壁26的气相沉积装置50包括：掩模单元80，其包括荫罩81和相对于彼此固定的位置的气相沉积源85; 用于使成膜基板200经由分隔壁26与荫罩81接触的接触装置71,87,88; 以及用于在保持由接触装置引起的接触的同时相对移动掩模单元80和成膜基板200中的至少一个的移动装置70。分隔壁26沿着移动装置相对移动掩模单元和成膜基板中的至少一个的方向形成为条状，并且多个分隔壁不连续地形成。

88. 发明专利

JP5315361B2 Method for manufacturing a light-emitting device 有权
公开(公告)号：JP5315361B2
公开(公告)日：2013-10-16
申请号：JP2011008084
申请日：2011-01-18
申请人：株式会社半導体エネルギー研究所
发明人：舜平山崎 , 健司福永
IPC分类号： C23C14/24 , H05B33/10 , C23C14/00 , C23C14/04 , C23C14/12 , C23C14/56 , G09F9/00 , H01L21/20 , H01L21/203 , H01L51/00 , H01L51/50 , H05B33/14
CPC分类号： C23C14/28 , B05D1/32 , B05D1/40 , B05D5/12 , C23C14/04 , C23C14/042 , C23C14/044 , C23C14/22 , C23C14/24 , C23C14/243 , C23C14/26 , C23C14/564 , H01L51/0008 , H01L51/0011 , H01L51/5012 , H01L51/56

89. 发明专利

JP5301736B2 Film deposition apparatus and a film forming material supply method 有权
公开(公告)号：JP5301736B2
公开(公告)日：2013-09-25
申请号：JP2012537689
申请日：2011-10-03
申请人：東京エレクトロン株式会社
发明人：裕司小野 , 輝幸林 , 裕是金子
IPC分类号： C23C14/24
CPC分类号： C23C14/24 , C03C17/002 , C23C14/543 , H01L51/0008
摘要： A deposition apparatus capable of suppressing pressure increase and temperature increase within a vapor generation unit and precisely controlling the temperature. A deposition apparatus for performing deposition treatment on a glass substrate (G) is provided with: a treatment chamber (5) which houses the glass substrate (G); a vapor generation unit (1) which generates vapor of a deposition material by heating the deposition material; a carrier path (21) for carrying the vapor of the deposition material generated by the vapor generation unit (1), together with carrier gas, to the treatment chamber (5); an exhaust path (22), a regulation valve device (31) which is provided in the middle of the carrier path; an exhaust valve device (32) which is provided in the middle of the exhaust path (22); a material temperature detection unit (64) which detects the temperature of the vapor generation unit (1); a first vapor amount detection unit (23), and a control unit (8) which, when the deposition material is heated, controls the opening/closing operation of the exhaust valve device (32) according to the level of the temperature of the vapor generation unit (1), and when the deposition material is carried to the treatment chamber, closes the exhaust valve device (32) and opens the regulation valve device (31) when the vapor amount detected by the first vapor amount detection unit (23) is stabilized.

90. 发明专利

JP5288074B2 Production method of the production method and this by the multifaceted with vapor deposition mask and organic semiconductor element obtained multifaceted with the deposition mask 有权
公开(公告)号：JP5288074B2
公开(公告)日：2013-09-11
申请号：JP2013003170
申请日：2013-01-11
申请人：大日本印刷株式会社
发明人：吉紀廣部 , 豊松元 , 昌人牛草 , 利彦武田 , 勝也小幡 , 祐行西村
IPC分类号： C23C14/24 , H01L51/50 , H05B33/10
CPC分类号： H01L51/0011 , C23C14/042 , C23C14/24 , C23C16/042 , H01L51/56 , Y10T29/49826
摘要： Provided is a method for producing a step-and-repeat vapor deposition mask which can be light weight and have high definition even when the size is increased. Each of a plurality of masks disposed in an open space within a frame is configured from a metal mask on which slits are disposed and a resin mask which is positioned on the surface of the metal mask and on which multiple openings corresponding to the pattern formed by means of vapor deposition are horizontally and vertically arranged in rows. During the formation of the plurality of masks, a resin film material for creating each metal mask and resin mask is attached to the frame, the resin film material is processed, and multiple openings corresponding to the pattern formed by means of vapor deposition are horizontally and vertically arranged in rows, thereby producing the step-and-repeat vapor deposition mask having the abovementioned features.

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