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81. 发明专利

JP2004001597A Vehicle inspection facility and vehicle transferring device 审中-公开
公开(公告)号：JP2004001597A
公开(公告)日：2004-01-08
申请号：JP2002158509
申请日：2002-05-31
申请人： Hitachi Kasado Eng Co Ltd , Hitachi Ltd , 日立笠戸エンジニアリング株式会社 , 株式会社日立製作所
发明人： NAKAJIMA ICHIRO , HAMAGUCHI NORIAKI , MIYAMOTO SUSUMU
IPC分类号： G01M17/007 , B60S5/00 , B60S11/00 , B60S13/00 , B66F5/00
摘要： PROBLEM TO BE SOLVED: To lessen the burden of the civil engineering work of a pit which is provided below the inspection line of an X ray inspection building, in which a carrying device for transferring an inspection object is arranged.
SOLUTION: The pit 5 is provided below the inspection line center and a guide rail 6 is provided in the pit to arrange the carrying device 10. An elevating device 13 with an arm 14 is provided to the carrying device via a turning device 12. The arm is set at a right angle to the travelling direction of the carrying device and the front wheels of a trailer 20 being the inspection target are held and transferred on the inspection line. After the inspection, the arm is turned to parallel with the travelling direction of the carrying device to allow the trailer to travel in the pit.
COPYRIGHT: (C)2004,JPO

82. 发明专利

JP2003188229A SYSTEM AND METHOD FOR MANUFACTURING WAFER 审中-公开
公开(公告)号：JP2003188229A
公开(公告)日：2003-07-04
申请号：JP2001384863
申请日：2001-12-18
申请人： HITACHI KASADO ENG CO LTD , HITACHI HIGH TECH CORP
发明人： KAJI TETSUNORI , UCHIMAKI YOICHI , EGAWA YUKO
IPC分类号： B65G49/00 , B65G49/07 , G05B19/042 , H01L21/00 , H01L21/677 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide an low-cost and flexible manufacturing system and a manufacturing method that can shorten the completion of construction of a series of processes to be made to an object to be treated, is suitable for a semiconductor-manufacturing system and a semiconductor-manufacturing method where single-wafer treatment and single-wafer conveyance are mainly carried out, and can quickly manufacture even for many types. SOLUTION: A plurality of pieces of treatment apparatus 11 to 14 having a conveyance mechanism inside each are installed, and pieces 15 and 16 of conveyance apparatus for conveying an object to be treated to the treatment apparatus are provided. The treatment apparatus has loader sections 22 and 23, that are provided along a port for delivering the object to be treated in the plurality of pieces of treatment apparatus and at the same time, over the delivery port of at least two pieces of treatment apparatus. At the inside of the loader section, a traveling robot 26, that travels over at least two delivery ports, and a delivery robot 28 that delivers the object to be treated on the traveling robot to the treatment apparatus via the delivery port are provided. The loader section is shielded for forming an atmosphere pressure space conveyance path by providing a cleaning apparatus, and at the same time is provided in the air. COPYRIGHT: (C)2003,JPO

83. 发明专利

JP2003083720A Method and apparatus for measuring treatment amount of film in semiconductor-element manufacturing process, method and apparatus for treatment of material to be treated by using them as well as method and apparatus for deciding end point by using them 有权
标题翻译：用于测量半导体元件制造工艺中的膜的处理量的方法和装置，用于如何使用它们来处理待处理的材料的方法和装置以及使用它们来决定终点的装置
公开(公告)号：JP2003083720A
公开(公告)日：2003-03-19
申请号：JP2001280908
申请日：2001-09-17
申请人： Hitachi High-Technologies Corp , Hitachi Kasado Eng Co Ltd , Hitachi Ltd , 日立笠戸エンジニアリング株式会社 , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： USUI TAKETO , FUJII TAKASHI , KIKKAI MOTOHIKO , KAJI TETSUNORI , YAMAMOTO HIDEYUKI
IPC分类号： G01B11/06 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To measure the actual etching depth and the residual film amount of a layer to be treated precisely in an on-line manner and to decide the end point of a process.
SOLUTION: A standard pattern using a wavelength as a parameter for the differential value of interference light with reference to the prescribed step of a first material to be treated and a standard pattern using a wavelength as a parameter for the differential value of interference light with reference to the prescribed mask residual film thickness of the material to be treated are set. Then, the intensity of interference light regarding a second material to be treated whose constitution is identical to that of the first material to be treated is measured regarding a plurality of wavelengths, and an actual pattern using a wavelength as a parameter fro the differential value of the measured intensity of the interference light is found. On the basis of the standard pattern and on the basis of the actual pattern for the differential value, the step and the mask residual film thickness of the second material to be treated are found. The end point of the process is decided on the basis of the found step and the found mask residual film thickness of the second material to be treated.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：以在线方式精确地测量被处理层的实际蚀刻深度和残留膜量，并决定工艺的终点。解决方案：参考第一待处理材料的规定步骤，使用波长作为干涉光的差分值的参数的标准图案，以及使用波长作为参考的干涉光的差分值的参数的标准图案设定待处理材料的规定掩模残留膜厚度。然后，测定与多个波长相同的构成与第一待处理材料相同的被处理材料的干涉光的强度，使用波长作为参考的实际图案，发现干涉光的测量强度。基于标准图案，并且基于差分值的实际图案，找到待处理的第二材料的台阶和掩模残留膜厚度。基于所处理的第二材料的发现步骤和所找到的掩模残留膜厚来确定工艺的终点。

84. 发明专利

JP2003037100A Method for plasma etching 有权
标题翻译：等离子体蚀刻方法
公开(公告)号：JP2003037100A
公开(公告)日：2003-02-07
申请号：JP2001223075
申请日：2001-07-24
申请人： Hitachi High-Technologies Corp , Hitachi Kasado Eng Co Ltd , Hitachi Ltd , 日立笠戸エンジニアリング株式会社 , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： SAITO TAKESHI , SAKAGUCHI MASAMICHI , FURUBAYASHI HITOSHI , KIKKAI MOTOHIKO , TANI SATOSHI
IPC分类号： H01L21/302 , H01J37/32 , H01L21/3065
CPC分类号： H01J37/32431 , H01J2237/3347 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a method for plasma-etching a semiconductor substrate capable of sufficiently obtaining an etching rate in trench working and an improvement in yield.
SOLUTION: The method for plasma-etching the semiconductor substrate comprises the steps of cooling a sample base 6 in a vacuum container 1 by a temperature controller 11, setting a temperature of a sample 7 made of a silicon substrate to a low temperature of 0°C or lower, then plasma-etching the sample 7 by using etching gas containing an SF
6 as a main component and adding O
2 thereto, and trench-working the sample 7.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种能够充分获得沟槽加工中的蚀刻速率并提高产量的半导体衬底的等离子体蚀刻方法。解决方案：等离子体蚀刻半导体衬底的方法包括以下步骤：通过温度控制器11将真空容器1中的样品基底6冷却，将由硅衬底制成的样品7的温度设定为0度的低温 ℃以下，然后通过使用含有SF6作为主要成分的蚀刻气体并向其中加入O 2，对样品7进行等离子体蚀刻，并对样品7进行沟槽加工。

85. 发明专利

JP2002212903A STRADDLE MONORAIL TRACK GIRDER AND ITS INSTALLATION METHOD 失效
公开(公告)号：JP2002212903A
公开(公告)日：2002-07-31
申请号：JP2001008416
申请日：2001-01-17
申请人： HITACHI LTD , HITACHI KASADO ENG CO LTD
发明人： HARADA SHINGO , SHIMIZU AKIO , AWA MASANAO
IPC分类号： E01B25/08 , B61B13/06 , E01B37/00
摘要： PROBLEM TO BE SOLVED: To provide straddle monorail track girders capable of simply adjusting an uneven steps of each of the track girders on the site whenever it occurs in each of the track girders resulting from low degree of manufacturing accuracy for the straddle monorail track girders. SOLUTION: An adjustable girder is constituted of a mounting seat, both side adjusting plates for a road adjusting plate set on the mounting seat by making use of a hinge constitution, a pedestal located at a space inside of the road adjusting plate and rigidly connected to the mounting seat and adjusting screw type jacks and nuts arranged toward the pedestal from the adjusting plates. An angle of each of the adjusting plates mounted on the mounting seat can be varied by adjusting each of the adjusting screw type jack. The adjusting girder is mounted to the ends of a PC girder and an RC girder to eliminate level differences in the vertical direction and in the direction of the width of track girders connected to each other.

86. 发明专利

JP2002076103A METHOD AND APPARATUS FOR CONTROLLING TEMPERATURE OF SAMPLE STAGE, AND METHOD AND APPARATUS FOR PROCESSING SAMPLE 失效
公开(公告)号：JP2002076103A
公开(公告)日：2002-03-15
申请号：JP2000258119
申请日：2000-08-23
申请人： HITACHI LTD , HITACHI KASADO ENG CO LTD
发明人： TAUCHI TSUTOMU , KIHARA HIDEKI , MARUYAMA EIJI , TSUBONE TSUNEHIKO , KANEKIYO TAKAMITSU
IPC分类号： F25D17/02 , F25D9/00 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/68 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To control a temperature distribution inside the surface of a sample so as to uniformly process the sample. SOLUTION: A plurality of coolant channels inside of a sample stage are connected in series to change the temperature of a coolant at the connected portions among the coolant channels, and the coolant is supplied to a next coolant channel. The temperature of the coolant sent out of the coolant channel is returned to the original temperature. The coolant returned to the original temperature is sent back to an original coolant channel to be circulated in a plurality of coolant channels.

87. 发明专利

JP2002043284A STACKED FILM SURFACE TREATING METHOD 失效
公开(公告)号：JP2002043284A
公开(公告)日：2002-02-08
申请号：JP2000219562
申请日：2000-07-19
申请人： HITACHI LTD , HITACHI KASADO ENG CO LTD , HITACHI IND CO LTD
发明人： SAKAGUCHI MASAMICHI , SAITO TAKESHI , KIKKAI MOTOHIKO , YAMAMOTO NAOHIRO
IPC分类号： H01L21/28 , H01L21/302 , H01L21/3065 , H01L21/3205 , H01L21/3213 , H01L23/52 , H01L29/423 , H01L29/43 , H01L29/49
摘要： PROBLEM TO BE SOLVED: To provide a stacked film surface treating method capable of treating a stacked silicon film with anisotropy and high precision when treating it with a plasma etching device. SOLUTION: Treatment is divided into several steps until exposing a gate oxide film 14 and for removing residue on the side wall of a gate electrode polycrystal silicon part 15 and the film 14. Plasma etching using gaseous hydrogen bromide (HBr) or mixed gas containing hydrogen bromide (HBr) is performed in at least one step in a former half and plasma etching using mixed gas of chloride (Cl2) and oxide (O2) is performed in at least one step in a latter half.

88. 发明专利

JP2002043281A POWER SOURCE DEVICE FOR GENERATING HIGH FREQUENCY AC PULSE 失效
公开(公告)号：JP2002043281A
公开(公告)日：2002-02-08
申请号：JP2000223855
申请日：2000-07-19
申请人： HITACHI LTD , HITACHI KASADO ENG CO LTD
发明人： UMEMOTO TSUYOSHI , KIMURA KATSUHISA , OGOSHI YASUO , TOWATA KENICHI
IPC分类号： H01L21/302 , H01L21/3065 , H02M7/538
摘要： PROBLEM TO BE SOLVED: To provide a power source for generating a high frequency AC pulse which is effective for improving a dry etching device in a semiconductor manufacturing process. SOLUTION: A single plus voltage variable power source is inputted to a single high frequency transformer to turn on/off a power MOS FET corresponding to required AC voltage and current, thereby a high frequency AC pulse in which a negative voltage generation pulse time is longer than a positive voltage generation pulse time can be outputted to a load for example.

89. 发明专利

JP2001267390A PLASMA TREATING APPARATUS 失效
公开(公告)号：JP2001267390A
公开(公告)日：2001-09-28
申请号：JP2000071120
申请日：2000-03-14
申请人： HITACHI LTD , HITACHI KASADO ENG CO LTD
发明人： MATSUDA SHINICHIRO , KUDO KATSUYOSHI , YOSHIOKA TAKESHI , TORII ZENZO
IPC分类号： H05H1/46 , H01L21/302 , H01L21/3065 , H01L21/677 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To solve the problem that a conventional device where a plasma treatment chamber is provided along with a cleaning/drying treatment chamber has a complicated configuration, and is expensive since the conventional apparatus as an air conveyance robot for transferring to the cleaning/drying treatment chamber, a vacuum robot installed in the plasma treatment chamber, and an air conveyance robot installed in the cleaning drying treatment chamber. SOLUTION: A lock chamber is shared, and the air conveyance robot for transfer and the air conveyance robot installed in a washing/drying device are shared, thus providing a further compact and inexpensive treating device.

90. 发明专利

JP2001250814A PLASMA TREATMENT DEVICE 失效
公开(公告)号：JP2001250814A
公开(公告)日：2001-09-14
申请号：JP2000065699
申请日：2000-03-06
申请人： HITACHI LTD , HITACHI KASADO ENG CO LTD
发明人： SETOGUCHI KATSUMI , KANEKIYO TAKAMITSU , SHIMADA TAKESHI , MORIOKA YASUKIYO
IPC分类号： B01J19/08 , C23C14/00 , C23C16/44 , C23C16/511 , C23F4/00 , H01L21/205 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To prevent peeling of an adhering deposit during plasma treatment and, at the same time, to easily remove the deposit by plasma cleaning after the plasma treatment. SOLUTION: A peeling-of-deposit suppressing member 11 having a roughened surface which comes into contact with the plasma is provided inside a vacuum vessel 1. A sample is treated therein with the plasma generated by supplying a gas into the vessel 1, while the internal pressure of the vessel 1 is maintained at a prescribed reduced value and the average surface roughness (Ra) and maximum surface roughness (Rmax) of the member 11 are adjusted to 1-6 μm and 20-40 μm, respectively.

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