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81. 发明专利

JPS51140481A METHOD OF FORMING OXIDE FILM OF SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JPS51140481A
公开(公告)日：1976-12-03
申请号：JP6502475
申请日：1975-05-29
申请人： SHARP KK
发明人： YANO MORICHIKA , KURATA YUKIO , MATSUI SADAMASU , YAMAMOTO SABUROU , KOMURO AKIRA
IPC分类号： H01L21/31 , H01L21/316 , H01L33/14 , H01L33/20 , H01L33/40
摘要： PURPOSE:To eliminate unnecessary current flowing in a semiconductor element during positive oxidation treatment by shortcircuiting the upper and lower surfaces of the element with metallic clip or the like and by conducting the treatment as predetermined in immersion in an electrolyte.

82. 发明专利

JPS5171078A Handotaisosasochi 失效
公开(公告)号：JPS5171078A
公开(公告)日：1976-06-19
申请号：JP14523074
申请日：1974-12-17
申请人： Sharp Kk
发明人： KURATA YUKIO , YANO MORICHIKA , MATSUI SADANORI , KOMURO AKIRA , YAMAMOTO SABURO
IPC分类号： H04N5/70 , H01L33/08 , H01L33/20 , H01L33/30

83. 发明专利

JP2002158339A SEMICONDUCTOR DEVICE AND ITS FABRICATING METHOD 失效
公开(公告)号：JP2002158339A
公开(公告)日：2002-05-31
申请号：JP2000353645
申请日：2000-11-20
申请人： SHARP KK
发明人： YANO MORICHIKA
IPC分类号： H01L21/316 , H01L21/8246 , H01L27/105
摘要： PROBLEM TO BE SOLVED: To suppress deterioration in the insulation performance of a ferroelectric film. SOLUTION: The semiconductor device comprises a ferroelectric thin film 9 for storing charges formed on a conductivity type silicon substrate 1 on which a memory selection transistor is formed wherein the ferroelectirc thin film 9 is formed by adding a group IIIA or IIIB element.

84. 发明专利

JPH11162327A FIELD EMISSION DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH11162327A
公开(公告)日：1999-06-18
申请号：JP32430797
申请日：1997-11-26
申请人： SHARP KK
发明人： OKI HIROSHI , TAKEGAWA YASUSHI , UDA KEIICHIRO , YANO MORICHIKA
IPC分类号： H01J9/02 , H01J1/30 , H01J1/304
摘要： PROBLEM TO BE SOLVED: To provide a high-density field emission device by which a plane display with high precision or multi-gradation or the like can be realized, by adopting such a formation that insulating characteristics between cathode lines are excellent, and also provide a manufacturing method thereof. SOLUTION: In the field emission device which is composed of plural cathode lines 1c formed linearly showing conductivity on the surface of a substrate 1, field emission cathodes 4 arranged on the cathode lines 1c, and a gate electrode 3 which is arranged on the peripheries of the field emission cathodes 4 and formed linearly in the vertical direction relative to the cathode lines 1c, such a formation is adopted that intervals of plural cathode lines 1c are insulated by thermally oxidized silicon 1d.

85. 发明专利

JPH10241552A ELECTRON SOURCE ARRAY AND ITS MANUFACTURE 失效
公开(公告)号：JPH10241552A
公开(公告)日：1998-09-11
申请号：JP4653497
申请日：1997-02-28
申请人： SHARP KK
发明人： SAWAHATA JUNICHI , INOUE YOSHIHISA , UDA KEIICHIRO , YANO MORICHIKA
IPC分类号： H01J9/02 , H01J1/30 , H01J1/304
摘要： PROBLEM TO BE SOLVED: To suppress variance in discharged currents between emitter electrodes by composing each of the emitter electrodes of a joined type field effect transistor using an outer region except a tip region as a gate and modulating the flow of electrons flowing in the center axis direction of the emitter electrode based on the potential of the gate. SOLUTION: An electron source array is constructed by providing an emitter 1 by machining a part of a band n type region 4 formed on a p type semiconductor substrate 6 to be roughly conical, and sequentially stacking band gate electrodes 2 orthogonal to an insulating layer 3 and the n type region so as to open the tip part of the emitter 1. According to this constitution, a p type silicon layer exists at the foot of the emitter 1 and a joined type field effect transistor using the p type silicon layer as a gate is formed. Thus, even if the characteristics of the emitter 1 are varied, the amount of currents discharged from each emitter 1 is easily controlled by a voltage applied to the gate of the joined type field effect transistor, and variance in discharged currents is effectively prevented.

86. 发明专利

JPH1012129A COLD CATHODE FIELD EMISSION ELECTRON SOURCE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH1012129A
公开(公告)日：1998-01-16
申请号：JP16549996
申请日：1996-06-26
申请人： SHARP KK
发明人： SAWAHATA JUNICHI , TOKUMARU TERUTAKA , YANO MORICHIKA
IPC分类号： H01J9/02 , H01J1/30 , H01J1/304 , H01J29/96
摘要： PROBLEM TO BE SOLVED: To ensure a uniform emission current by incorporating an FET into an emitter of a cold cathode field emission electron source. SOLUTION: A cold cathode field emission electron source is a junction FET structure with a semiconductor substrate 21 being a source, an emitter 22 being a drain, and a p-type silicon area 23 being a gate. By FET current saturation characteristics, an electron current emitted from an emitter can be restricted. When a voltage is applied between an electron source gate substrate 25, an FET gate electrode 26, and a semiconductor substrate 21, the magnitude of a current to be emitted from the emitter is determined depending upon a balance between the FET I-V characteristics and the emitter I-V characteristics. Thus, a uniform current is obtained without generating dispersion in electron emission due to dispersion in the emitter shape.

87. 发明专利

JPH09331035A DIELECTRIC THIN FILM CAPACITOR ELEMENT AND ITS MANUFACTURE 失效
公开(公告)号：JPH09331035A
公开(公告)日：1997-12-22
申请号：JP14542396
申请日：1996-06-07
申请人： SHARP KK
发明人： KITA RYUSUKE , MASUDA YOSHIYUKI , MATSU YOSHIYUKI , OTANI NOBORU , YANO MORICHIKA
IPC分类号： C01G23/00 , H01G4/10 , H01G4/33 , H01L21/203 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L21/8247 , H01L27/04 , H01L27/105 , H01L27/108 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To suppress the increase of a leak current resulting from the current application time at a high temperature by a method in which an oxygen pore is provided in a dielectric thin film, and the dielectric thin film is composed of titanium, strontium and oxide material containing lanthanium. SOLUTION: In this dielectric thin film capacitor element, a silicon thermally oxidized film 2, a Ti adhesive layer 3, a Pt lower electrode layer 4, a dielectric thin film 5 consisting of oxide material containing titanium, strontium and lanthanium, and a Pt upper electrode layer 6 are successively formed on an n-type silicon substrate 1. SrTiO3 powder or S+TiO3 powder and BaTiO3 powder are sufficiently mixed until the density of La in an STO thin film or a BSTO thin film becomes the desired density, the mixture is sintered, and the obtained material is used as the sputtering target of a dielectric. As a result, a dielectric thin film capacitor element, having the insulating property which hardly deteriorates even when it is used at a high temperature for 1000 hours under application of DC voltage, can be obtained.

88. 发明专利

JPH09331020A DIELECTRIC THIN FILM CAPACITOR ELEMENT AND ITS MANUFACTURE 失效
公开(公告)号：JPH09331020A
公开(公告)日：1997-12-22
申请号：JP14542296
申请日：1996-06-07
申请人： SHARP KK
发明人： KITA RYUSUKE , MASUDA YOSHIYUKI , MATSU YOSHIYUKI , OTANI NOBORU , YANO MORICHIKA
IPC分类号： C01G23/00 , C23C14/08 , C23C14/34 , H01G4/12 , H01G4/33 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L21/8247 , H01L27/04 , H01L27/10 , H01L27/105 , H01L27/108 , H01L29/788 , H01L29/792 , H01L29/92
摘要： PROBLEM TO BE SOLVED: To suppress the increase of a leak current resulting from the current application time at a high temperature, and to improve insulating property and reliability by a method in which a dielectric thin film is composed at least of titanium, strontium and erbium containing oxide material. SOLUTION: On a dielectric thin film capacitor element, a silicon thermally oxidized film 2, a Ti adhesive layer 3, a Pt lower electrode layer 4, a dielectric thin film 5 consisting of oxide material containing titanium, strontium and erbium, and a p upper electrode layer 6 are formed successively on an n-type silicon substrate 1. The dielectric thin film capacitor element is manufactured as follows: First, a thermally oxidized film 2 of 200nm in thickness is formed on the surface of the n-type silicon substrate 1 as an insulating layer by thermally oxidizing method. A Ta adhesive layer 3 of 30nm in thickness and a Pt lower electrode layer 4 of 200nm in thickness are formed successively on the silicon thermally oxidized film 2 by a DC sputtering method.

89. 发明专利

JPH09306337A FIELD EMISSION TYPE ELECTRON SOURCE ELEMENT AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH09306337A
公开(公告)日：1997-11-28
申请号：JP12175196
申请日：1996-05-16
申请人： SHARP KK
发明人： MORITA HIROKO , URAYAMA MASAO , INOUE YOSHIHISA , TAKEGAWA YASUSHI , OTANI NOBORU , UDA KEIICHIRO , YANO MORICHIKA
IPC分类号： H01J9/02 , H01J1/30 , H01J1/304 , H01J29/04 , H01J31/12
摘要： PROBLEM TO BE SOLVED: To provide a field emission type electron source element which can prevent the degradation of a degree of vacuum, element breakdown and generation of a leak electrode between a cold cathod and a gate electrode and can be driven in low voltage and has the long service life, and a manufacturing method therefor. SOLUTION: This electron source element is formed by working a surface of a silicon substrate 1, and is composed of a silicon projecting part 5 being a cold cathode to emit an electron on the basis of the principle of field emission and a gate electrode layer 6 being an electron extraction electrode arranged on the periphery of the silicon projecting part 5 through an insulating layer 4. In this case, an end part of the gate electrode layer 6 is formed in the shape of projecting so as to surround the tip of the silicon projecting part 5, and surface coat layers 8a, 8b and 8c are arranged on a surface in the vicinity of the tip of the silicon projecting part 5, a surface where the gate electrode layer 6 is opposed to the silicon projecting part 5 and the gate electrode layer 6.

90. 发明专利

JPH0992142A MANUFACTURE OF PLATE MAGNETRON AND PLATE MAGNETRON 失效
公开(公告)号：JPH0992142A
公开(公告)日：1997-04-04
申请号：JP24631295
申请日：1995-09-25
申请人： SHARP KK
发明人： IDE TETSUYA , YANO MORICHIKA
IPC分类号： H01J9/14 , H01J23/12 , H01J23/20 , H01J25/50
摘要： PROBLEM TO BE SOLVED: To stabilize oscillation by preventing reduction in efficiency caused by a dislocation a in a vane pitch, and stabilizing output by reducing turbulence of a high frequency electric field. SOLUTION: A pressure equalizing plate 31 is manufactured by an alumina block 26 and an oxygen free copper block 27, and this pressure equalizing plate 31 is fitted and adhered to a groove part 23 of the copper block, and a positive electrode 30 for a plate type magnetron is completed. This positive electrode 30 is soaked in Pyrex glass melted at 800 deg.C in a nitrogen atmosphere, and after it is cooled, glass of an unncessary part is eliminated, and a contact plane is polished, and a glass surface 32 is formed on a surface of the positive electrode 30, and glass is filled between vanes to constitute a cavity resonator.

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