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1. 发明专利

JPS6052576B2 失效
公开(公告)号：JPS6052576B2
公开(公告)日：1985-11-20
申请号：JP5314078
申请日：1978-04-28
申请人： SHARP KK
发明人： YAMAMOTO SABURO , YANO MORICHIKA , KURATA YUKIO , MATSUI KANEKI , KOMURO AKIRA
IPC分类号： C30B19/06 , H01L21/208 , H01L33/30

2. 发明专利

JPS5561084A SEMICONDUCTOR LASER DEVICE OF STRIPED CONSTRUCTION 失效
公开(公告)号：JPS5561084A
公开(公告)日：1980-05-08
申请号：JP13418478
申请日：1978-10-30
申请人： SHARP KK
发明人： YAMAMOTO SABUROU , YANO MORICHIKA , KURATA YUKIO , MATSUI KANEKI , KOMURO AKIRA , HAYAKAWA TOSHIROU
IPC分类号： H01S5/00
摘要： PURPOSE:To obtain a laser transmission of single transverse mode over a wide range of electric current, by adopting a specific relationship between the stripe width of striped region constituting a semiconductor laser device and the effective current concentration width on the pn junction surface. CONSTITUTION:An n-type Ga1-xAlxAs layer 2 (x -0.3), p-type GaSa layer 3 as an active layer, p-type Ga1-xAlxAs layer 4 (x -0.3) and a p -type GaAs layer 5 are laminated and grown on an n-type GaAs substrate 1, to form a double-heterodyne type semiconductor laser device. Stripe portions which constitute the electrodes are exposed on the surface of the layer 5, while remainder portions are covered with an insulating film 6 such as of SiO2. A p-side electrode 7 is laid on the film 6 to make contact with the stripe portions, while n-side electrode 8 is attached to the reverse side of the substrate 1. The stripe width W and the effective current concentration width d of the pn junction are selected to meet the following conditions. D

3. 发明专利

JPS54125990A STRIPE STRUCTURE OF SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPS54125990A
公开(公告)日：1979-09-29
申请号：JP3443078
申请日：1978-03-23
申请人： SHARP KK
发明人： KOMURO AKIRA , YANO MORICHIKA , YAMAMOTO SABUROU , KURATA YUKIO , MATSUI KANEKI
IPC分类号： H01S5/00
摘要： PURPOSE:To reduce the stripe width and thus to reduce occurrence of the strain, defect and other negative factors by introducing the diffusion technique to the mesa- type stripe structure. CONSTITUTION:The n-Ga1-XAlXAs layer 2, n-GaSa layer 3, p-Ga1-XAlXAs layer 4 and p-GaAs layer 5 are laminated in that order onto n-GaAs substrate 1. The mesa-type etching is given to both ends n-GaAs substrate 1. The mesa-type etching is given to both ends of layer 5, and the accumulation layer of stripe type is formed on layer 4. Then Zn is diffused from the surface of layer 4 to form Zn diffusion layer 13. The diffusion front of Zn is stopped inside layer 5 for the region to which the diffusion is given from the surface of layer 5, and reaches inside of layer 2 for the region to which the diffusion is given from the surface of layer 4 respectively. And the current flows with the region of layer 3 where no Zn diffusion is given used as the passage owing to the difference of the energy barrier to the electron. Thus, the current path is limited within the active layer, obtaining an extremely narrowed laser oscillation region.

4. 发明专利

JPS54114052A INFORMATION DETECTING SYSTEM 失效
公开(公告)号：JPS54114052A
公开(公告)日：1979-09-05
申请号：JP2109378
申请日：1978-02-24
申请人： SHARP KK
发明人： KURATA YUKIO , YANO MORICHIKA , YAMAMOTO SABUROU , MATSUI KANEKI , KOMURO AKIRA
IPC分类号： G11C13/04
摘要： PURPOSE:To realize the information detection through a simple constitution and with the reduced read-out error by lowering the electric resistance value of the photo detector when part of the laser reflected beam is put in and then detecting the current of the driving circuit via the current detector. CONSTITUTION:Laser output source 2 irradiates the laser to the information storage carrier, and the reflected light corresponding to the storage information is put in again. In this case, source 2 is connected electrically to power source 5 via the driving circuit, and photo sensor 6 and current detector 7 are provided on the driving circuit. Detector 6 lowers its electric resistance value when part of the laser output beam is put in, and the current of the driving circuit is detected by detector 7. Thus, the stored information of the information storage carrier is converted into the electric signals. In such way, the information can be detected through a simple constitution with the reduced read-out error.

5. 发明专利

JPS5474688A MANUFACTURE FOR PHOTO SEMICONDUCDTOR DEVICE WITH MONITOR 失效
公开(公告)号：JPS5474688A
公开(公告)日：1979-06-14
申请号：JP14204577
申请日：1977-11-26
申请人： SHARP KK
发明人： MATSUI KANEKI , KOMURO AKIRA , KURATA YUKIO , YAMAMOTO SABUROU , YANO MORICHIKA
IPC分类号： H01L31/10 , H01L31/12 , H01S5/00 , H01S5/026
摘要： PURPOSE:To incerease the mass-producibility, by mounting the photo semiconductor and the photo detector detecting the output condition near with each other and providing the optical guide leading the monitor detection light of photo semiconductor to the photo detector. CONSTITUTION:The concave part is formed on the heat sink 4, and the protective film 8 is coated with gold and nickel plating. Further, the solder 9 of In and Sn is laminated with vacuum evaporation, and the semiconductor laser 5 and the photo detection diode 6 are mounted by taking this as soldering material. Further, the laser light outputted from the laser 5 is introduced to the photo detection diode 6 with good efficiency through the provision of the prism 7.

6. 发明专利

JPS5471588A STRIPE STRUCTURE AND PRODUCTION OF SEMICONDUCTOR LASER ELEMENTS 失效
公开(公告)号：JPS5471588A
公开(公告)日：1979-06-08
申请号：JP13855177
申请日：1977-11-17
申请人： SHARP KK
发明人： KURATA YUKIO , YANO MORICHIKA , YAMAMOTO SABUROU , MATSUI KANEKI , KOMURO AKIRA
IPC分类号： H01S5/00
摘要： PURPOSE:To achieve the improvement in actual effciency of current conentration by making possible the oscillation of fundameutal transverse mode having a single intensity maximum point with a stripe structure of a narrow width without giving distortions to its active layer. CONSTITUTION:nGa1-XAlXAs 2, pGaAs active layer 3, pGa1-XAlXAs 4, p GaAs 5 are laminated on an n GaAs substrate 1 doped with Si. Etching is performed from the layer 5 surface down to the mid-portion of the layer 5 and layer 4 to form a strip structure. Following to this, a S-diffused layer 13 is created in the layers 5, 4 from the etching face, then the stripe part is narrowed of its current limiting path and the layer 4 of the other portions constituting a hetero junction interface is diffused with S down to the hetero junction interface in its longitudinal direction. When the S-diffused front face arrives at the layer 3, the transverse diffusion width in the layer 5 becomes half of the difference between the stripe width W1 and laser spot width WO. Electrodes 7, 8 are made to the layer 5 and substrate 1. This method enables the laser device of stable output characteristics to be obtained through one crystal growth and shallow diffusion without any impairment of the crystallinity of the element.

7. 发明专利

JPS5414183A SEMICONDUCTOR LASER ELEMENT AND ITS MANUFACTURE 失效
公开(公告)号：JPS5414183A
公开(公告)日：1979-02-02
申请号：JP8053077
申请日：1977-07-05
申请人： SHARP KK
发明人： KURATA YUKIO , YANO MORICHIKA , YAMAMOTO SABUROU , MATSUI KANEKI , KOMURO AKIRA
IPC分类号： H01L21/316 , H01L21/31 , H01S5/00
摘要： PURPOSE:To make stable the basic oscillation mode and to make life longer, by forming selectively the oxide film on the laser cleavage plane.

8. 发明专利

JPS542080A SEMICONDUCTOR LASER ELEMENT AND ITS MANUFACTURE 失效
公开(公告)号：JPS542080A
公开(公告)日：1979-01-09
申请号：JP6719577
申请日：1977-06-06
申请人： SHARP KK
发明人： YANO MORICHIKA , YAMAMOTO SABUROU , KURATA YUKIO , MATSUI KANEKI , KOMURO AKIRA
IPC分类号： H01S5/00 , H01S5/028
摘要： PURPOSE:To manufacture a laser element, by adding a function which can maintain the laser output condition stably independent of ambient temperature, with a simple constitution.

9. 发明专利

JPS5393789A MONITOR STRCUTRE OF PHOTO SEMICONDUCTOR 失效
公开(公告)号：JPS5393789A
公开(公告)日：1978-08-17
申请号：JP844677
申请日：1977-01-27
申请人： SHARP KK
发明人： KURATA YUKIO , YANO MORICHIKA , YAMAMOTO SABUROU , MATSUI KANEKI , KOMURO AKIRA
IPC分类号： H01L27/15 , H01L31/12 , H01S5/00 , H01S5/026
摘要： PURPOSE:To eliminate the need for alignment of both elements and retionalize adjustment lines requiring labor by simultaneously forming a pair of light emitting element and monitoring photo detector on the same semiconductor substrate through photoetching.

10. 发明专利

JPS5345186A SEMICONDUCTOR LASER 失效
公开(公告)号：JPS5345186A
公开(公告)日：1978-04-22
申请号：JP12006276
申请日：1976-10-05
申请人： SHARP KK
发明人： KURATA YUKIO , YANO MORICHIKA , YAMAMOTO SABUROU , MATSUI KANEKI , KOMURO AKIRA
IPC分类号： H01S5/00 , H01S5/042
摘要： PURPOSE:To prevent the degradation in crystal grade, prolong the service life of a diode and facilitate controlling the position of an oscillation spot and an oscillation mode by fitting a reflection film or transmission film or their composite film to the cleavage faces of a semiconductor laser.

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