专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

81. 发明专利

JP2014190808A Acceleration sensor 有权
标题翻译：加速传感器
公开(公告)号：JP2014190808A
公开(公告)日：2014-10-06
申请号：JP2013066064
申请日：2013-03-27
申请人： Denso Corp , 株式会社デンソー
发明人： SUGIMOTO YOSHIMASA , SAKAI MINEICHI , MIYAZAKI TAKAHIRO , MARUYAMA YUMI
IPC分类号： G01P15/125 , B81B3/00 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To provide an acceleration sensor which can suppress the degradation in detection accuracy while reducing an influence of thermal strain.SOLUTION: A movable part 20 including movable electrodes 25a and 25b which are arranged apart from a support substrate 11 in a normal direction to a surface direction of the support substrate 11 and are rotatable in response to an acceleration applied in the normal direction, and lower electrodes 71 and 72 arranged so as to face the movable electrodes 25a and 25b are provided on the support substrate 11. Further, fixed parts 30 and 40 having fixed electrodes 32 and 42 which are arranged apart from the lower electrodes 71 and 72 in the normal direction to constitute capacities equal to capacities constituted between the movable electrodes 25a and 25b and the lower electrodes 71 and 72, between the fixed electrodes 32 and 42 themselves and the lower electrodes 71 and 72 are provided on the support substrate 11. An acceleration is detected on the basis of the difference between the capacities constituted between the movable electrodes 25a and 25b and the lower electrodes 71 and 72 and the capacities constituted between the fixed parts 32 and 42 and the lower electrodes 71 and 72.
摘要翻译：要解决的问题：提供一种加速度传感器，其能够抑制检测精度的降低，同时减少热应变的影响。解决方案：包括可移动电极25a和25b的可移动部件20，其以正常的方式与支撑基板11分开布置朝向支撑基板11的表面方向，并且可以响应于沿法线方向施加的加速度而旋转，并且在支撑基板11上设置有与可动电极25a和25b相对配置的下电极71和72.另外具有固定电极32和42的固定部分30和40，它们沿垂直方向与下部电极71和72分开设置，以构成等于可动电极25a和25b与下部电极71和72之间的电容的能力，固定电极32和42本身以及下电极71和72设置在支撑基板11上。加速度为d 基于在可动电极25a和25b与下电极71和72之间构成的容量之间的差异以及在固定部分32和42与下电极71和72之间构成的电容之间的差异。

82. 发明专利

JP2014190807A Acceleration sensor 审中-公开
标题翻译：加速传感器
公开(公告)号：JP2014190807A
公开(公告)日：2014-10-06
申请号：JP2013066063
申请日：2013-03-27
申请人： Denso Corp , 株式会社デンソー
发明人： MIYAZAKI TAKAHIRO , SAKAI MINEICHI , SUGIMOTO YOSHIMASA , MARUYAMA YUMI
IPC分类号： G01P15/125 , B81B3/00 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To provide an acceleration sensor which is capable of suppressing difference in detection range between application of an acceleration of movement from a support substrate toward a movable part and application of an acceleration of movement from the movable part toward the support substrate.SOLUTION: A movable part 20 is configured to have a torsion beam 23 which is a revolving shaft for rotation of the movable part 20 and is supported on a support substrate 11 via an anchor part 24. When one of portions divided by a virtual line L along the torsion beam 23 is denoted as a first portion 22a and the other is denoted as a second portion 22b, a length L1 from the torsion beam 23 to an end part farthest from the torsion beam 23 of the first portion 22a and a length L2 from the torsion beam 23 to an end part farthest from the torsion beam 23 of the second portion 22b are equalized to each other, and a notch part 22c is formed on the second portion 22b to make a mass of the second portion 22b smaller than that of the first portion 22a.
摘要翻译：要解决的问题：提供一种加速度传感器，其能够抑制从支撑基板朝向可动部件的移动加速度的应用之间的检测范围的差异，以及从可动部朝向支撑基板的运动加速度。解决方案：可移动部件20构造成具有作为可动部20的旋转的旋转轴的扭力梁23，并且经由锚固部24支撑在支撑基板11上。当由虚拟线L 沿扭转梁23被表示为第一部分22a，另一个表示为第二部分22b，从扭力梁23到距离第一部分22a的扭转梁23最远的端部的长度L1和长度L2 从扭力梁23到距离第二部分22b的扭转梁23最远的端部彼此相等，并且在第二部分22b上形成切口部分22c，以形成质量第二部分22b比第一部分22a小。

83. 发明专利

JP2013117396A Acceleration sensor 审中-公开
标题翻译：加速传感器
公开(公告)号：JP2013117396A
公开(公告)日：2013-06-13
申请号：JP2011263918
申请日：2011-12-01
申请人： Denso Corp , 株式会社デンソー
发明人： SAKAI MINEICHI
IPC分类号： G01P15/125 , H01L29/84
CPC分类号： G01P15/125 , G01P2015/0831
摘要： PROBLEM TO BE SOLVED: To provide an acceleration sensor capable of enhancing acceleration detection accuracy.SOLUTION: The acceleration sensor includes a first anchor (17), a second anchor (18), a first weight (19) supported by the first anchor (17), a second weight (22) supported by the second anchor (18), a first electrode (20) extending from the first weight (19), a second electrode (23) extending from the second weight (22), and a first beam (21) for connecting the first weight (19) and the first anchor (17). The first weight (19) includes a first left part (24) and a first right part (25) different in weight and arranged in an x direction. The first beam (21) includes a first connection beam (26) extending from the first left part (24) to the first right part (25) in the x direction, and a first support beam (27) extending from the first connection beam (26) to the first anchor (17) in a y direction. The first electrode (20) and the second electrode (23) face each other in the x direction.
摘要翻译：要解决的问题：提供一种能够提高加速度检测精度的加速度传感器。解决方案：加速度传感器包括第一锚固件（17），第二锚固件（18），由第一锚固件（17）支撑的第一重物（19），由第二锚固件支撑的第二重物（22） 18），从第一配重（19）延伸的第一电极（20），从第二配重（22）延伸的第二电极（23）和用于将第一配重（19）和第一锚（17）。第一重物（19）包括重量不同并沿x方向排列的第一左部分（24）和第一右部分（25）。第一梁（21）包括在x方向上从第一左部分（24）延伸到第一右部分（25）的第一连接梁（26）和从第一连接梁（26）沿着ay方向连接到第一锚（17）。第一电极（20）和第二电极（23）在x方向上彼此面对。版权所有（C）2013，JPO＆INPIT

84. 发明专利

JP2012251933A Humidity sensor and manufacturing method thereof 有权
标题翻译：湿度传感器及其制造方法
公开(公告)号：JP2012251933A
公开(公告)日：2012-12-20
申请号：JP2011126375
申请日：2011-06-06
申请人： Denso Corp , 株式会社デンソー
发明人： NIIMI NAOHISA , SAKAI MINEICHI
IPC分类号： G01N27/22 , G01N27/12
CPC分类号： G01N27/223 , G01N27/121
摘要： PROBLEM TO BE SOLVED: To provide a humidity sensor capable of more effectively inhibiting a protection gel part from attaching to a moisture sensitive film while simplifying a configuration and a manufacturing process, and a manufacturing method thereof.SOLUTION: A humidity sensor 10 includes: a humidity detecting part 30 having a pair of detection electrodes 31a and 31b and a moisture sensitive film 36 arranged oppositely on one surface 20a of a substrate 20; a pad 40 formed separately from the humidity detecting part 30 in the one surface 20a and covered with a protection gel 50 with boding wire 115 connected; and a dam part 60 formed between the humidity detecting part 30 and the pad 40 in the one surface 20a to inhibit the protection gel 50 from flowing from the pad 40 side to the humidity detecting part 30 side. The dam part 60 has dummy wire 61 formed on the one surface 20a by using the same material as the detection electrodes 31a and 31b, and a moisture sensitive film 62 for a dam formed by using the same material as the moisture sensitive film 36 to cover at least a portion of the dummy wire 61.
摘要翻译：要解决的问题：提供一种湿度传感器，其能够更有效地抑制保护凝胶部件附着于湿敏膜，同时简化构造和制造工艺，及其制造方法。湿度传感器10包括：具有一对检测电极31a和31b的湿度检测部分30和相对地设置在基板20的一个表面20a上的湿敏膜36; 在一个表面20a中与湿度检测部分30分开形成并且被连接有编织线115的保护凝胶50覆盖的垫40; 以及形成在一个表面20a中的湿度检测部30和垫40之间的阻挡部60，以防止保护胶50从垫40侧流向湿度检测部30侧。坝部分60具有通过使用与检测电极31a和31b相同的材料形成在一个表面20a上的虚设电线61，以及通过使用与湿敏膜36相同的材料形成的用于阻挡层的湿敏膜62，以覆盖虚线61的至少一部分。（C）2013，JPO＆INPIT

85. 发明专利

JP2012247223A Capacitive type humidity sensor 有权
标题翻译：电容式湿度传感器
公开(公告)号：JP2012247223A
公开(公告)日：2012-12-13
申请号：JP2011117195
申请日：2011-05-25
申请人： Denso Corp , 株式会社デンソー
发明人： SAKAI MINEICHI , NIIMI NAOHISA
IPC分类号： G01N27/22
CPC分类号： G01N27/223 , G01N27/048 , G01N27/225
摘要： PROBLEM TO BE SOLVED: To miniaturize the constitution while increasing the sensitivity of a capacitance type humidity sensor configured such that a detection capacitive element and a reference capacitive element are formed on the same surface on a substrate, and that the reference capacitive element has a moisture sensitive film.SOLUTION: In a detection capacitive element 31 and a reference capacitive element 32, electrodes 33a and 33b for detection and electrodes 34a and 34b for reference are arranged on the same surface 20a on a substrate 20, and formed of the same configuring materials with the same width and thickness, and a moisture sensitive film 35a for detection and a moisture sensitive film 35b for reference are formed of the same configuring elements with the same thickness. When a rate C2/C1 of a capacitance value C2 of 100%RH to a capacitance value C1 of 0%RH of the capacitive elements 31 and 32 is defined as the inclination of the capacitance value to humidity change, an electrode interval dm of the detection capacitive element 31 and an electrode interval dr of the reference capacitive element 32 are set such that the electrode interval dr is narrower than the electrode interval dm and an interval showing the maximum value of the rate C2/C1, and that the rate C2/C1 of the detection capacitive element 31 is larger than the rate C2/C1 of the reference capacitive element 32.
摘要翻译：解决方案：为了使结构小型化，同时提高电容式湿度传感器的灵敏度，该电容式湿度传感器被配置为使得检测电容元件和参考电容元件形成在基板上的相同表面上，并且参考电容元件有一个湿敏膜。解决方案：在检测电容元件31和参考电容元件32中，用于检测的电极33a和33b以及用于参考的电极34a和34b布置在基板20上的同一表面20a上，并由相同的配置材料具有相同的宽度和厚度，并且用于检测的湿敏膜35a和用于参考的湿敏膜35b由相同厚度的相同配置元件形成。当将电容值C2为100％RH至电容元件31,32的0％RH的电容值C1的速率C2 / C1定义为电容值对湿度变化的倾斜度时，电极间隔dm 检测电容元件31和参考电容元件32的电极间隔dr被设定为使得电极间隔dr比电极间隔dm窄，并且表示速率C2 / C1的最大值的间隔，并且速率C2 / 检测电容元件31的C1大于参考电容元件32的速率C2 / C1。COPYRIGHT：（C）2013，JPO＆INPIT

86. 发明专利

JP2008021902A Semiconductor device, and its manufacturing method 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2008021902A
公开(公告)日：2008-01-31
申请号：JP2006193866
申请日：2006-07-14
申请人： Denso Corp , 株式会社デンソー
发明人： NINOMIYA YASUTOKU , TOTOKAWA SHINJI , NIDAN AKIRA , SAKAI MINEICHI
IPC分类号： H01L21/60
CPC分类号： H01L2224/0401 , H01L2224/06102 , H01L2224/16225
摘要： PROBLEM TO BE SOLVED: To electrically bond a semiconductor chip over regions where heights in whole surfaces are different even if there are any height variations in the whole surfaces of a package, in a semiconductor device constituted by electrically bonding both electrodes of the semiconductor chip and a ceramic package in the state where sides having each electrode of the semiconductor chip and the ceramic package are made to be faced.
SOLUTION: Between a chip electrode 12 and a package electrode 22, there intervenes conductive adhesive 30 as a conductive bonding member which can be deformed at the time of loading a semiconductor chip 10 on a package 20. While the both electrodes 12, 22 are electrically connected by this conductive adhesive 30, heights variations T existing in whole surfaces 21 of the package 20 are absorbed by deforming the conductive adhesive 30.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：即使在包装的整个表面上存在任何高度变化的情况下，在半导体芯片的整个表面的高度不同的区域上电连接半导体芯片，在通过电连接两个电极半导体芯片和具有半导体芯片和陶瓷封装的每个电极的侧面的状态的陶瓷封装。解决方案：在芯片电极12和封装电极22之间，插入作为导电接合部件的导电粘合剂30，在将半导体芯片10装载在封装20上时可以变形。尽管两个电极12， 22通过该导电粘合剂30电连接，存在于包装20的整个表面21中的高度变化T被导电粘合剂30变形所吸收。（C）2008，JPO＆INPIT

87. 发明专利

JP2007279056A Semiconductor mechanical mass sensor 有权
标题翻译：半导体机械传感器
公开(公告)号：JP2007279056A
公开(公告)日：2007-10-25
申请号：JP2007148077
申请日：2007-06-04
申请人： Denso Corp , 株式会社デンソー
发明人： KATO NOBUYUKI , SAKAI MINEICHI , YAMAMOTO TOSHIMASA , FUKADA TAKESHI
IPC分类号： G01P15/125 , G01C19/56 , G01P9/04 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To provide semiconductor mechanical mass sensor, in which circumferential parasitic capacitance, existing in circumference of sensor element, prevents deterioration in sensor sensitivity. SOLUTION: This sensor comprises support substrate and element forming film 200 formed on the supporting substrate. The element forming film 200 is demarcated into sensor element section which has a movable section 2A for detecting capacity variation involving in displacement of the movable section 2A and a periphery section 201 circumferentially-located around the sensor element section, via a groove formed on the element forming film 200; and the periphery section 201 includes a means 202 for stabilizing the electric potential of the periphery section 201. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供存在于传感器元件周围的周向寄生电容的半导体机械质量传感器防止传感器灵敏度的劣化。
解决方案：该传感器包括形成在支撑基板上的支撑基板和元件形成膜200。元件形成膜200被划分为传感器元件部分，该传感器元件部分具有用于检测可移动部分2A的位移的容量变化的移动部分2A和周围位于传感器元件部分周围的周边部分201，该周边部分201经由形成在元件上的凹槽成膜200; 并且周边部分201包括用于稳定周边部分201的电位的装置202.版权所有（C）2008，JPO＆INPIT

88. 发明专利

JP2007019152A Semiconductor sensor and its manufacturing method 有权
标题翻译：半导体传感器及其制造方法
公开(公告)号：JP2007019152A
公开(公告)日：2007-01-25
申请号：JP2005197412
申请日：2005-07-06
申请人： Denso Corp , 株式会社デンソー
发明人： SAKAI MINEICHI , ABE RYUICHIRO , YAMANAKA AKITOSHI
IPC分类号： H01L23/02 , G01P15/08 , H01L21/60 , H01L29/84
CPC分类号： G01P15/0802 , B81B7/007 , G01P15/125 , G01P2015/0814 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L2224/02166 , H01L2224/04042 , H01L2224/05554 , H01L2224/05599 , H01L2224/05624 , H01L2224/05647 , H01L2224/0566 , H01L2224/45124 , H01L2224/45144 , H01L2224/48463 , H01L2224/48624 , H01L2224/48647 , H01L2224/48724 , H01L2224/48747 , H01L2224/85201 , H01L2224/8592 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01068 , H01L2924/01079 , H01L2924/181 , H01L2924/30105 , H01L2924/3025 , Y10T29/49002 , H01L2924/00 , H01L2224/4876 , H01L2224/4866
摘要： PROBLEM TO BE SOLVED: To suppress an increase in size of a semiconductor substrate as much as possible and cover a sensor without using a cover made of a semiconductor material, in a semiconductor acceleration sensor that is formed by forming a sensor and a bonding wire for picking up signals of the sensor on one surface of the semiconductor substrate. SOLUTION: A capacitive semiconductor acceleration sensor S1 is provided with a movable part 20 and fixed electrodes 31 and 41 as a sensor on one surface of a semiconductor substrate 10. In this case, a resin film 100 is provided on one surface of the semiconductor substrate 10 while it covers the sensor apart therefrom and it is stuck to one surface of the semiconductor substrate 10 in the surrounding part of the sensor, and pads 25a, 30a and 40a are provided in the sticking area of the resin film 100 on the one surface of the semiconductor substrate 10. A part 110 for electrically connecting the pads and the bonding wires is provided in a region corresponding to the pads in the resin film 100. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了在半导体加速度传感器中形成传感器和形成传感器形成半导体加速度传感器，尽可能地抑制半导体基板的尺寸的增加并覆盖传感器而不使用由半导体材料制成的盖用于拾取传感器在半导体衬底的一个表面上的信号的接合线。解决方案：电容半导体加速度传感器S1在半导体衬底10的一个表面上设置有作为传感器的可动部件20和固定电极31和41.在这种情况下，树脂膜100设置在半导体基板10同时覆盖传感器，并且在传感器的周围部分粘贴到半导体基板10的一个表面，并且在该树脂膜100的粘贴区域中设置有焊盘25a，30a和40a 半导体基板10的一个表面。用于电连接焊盘和接合线的部分110设置在对应于树脂膜100中的焊盘的区域中。（C）2007，JPO＆INPIT

89. 发明专利

JP2006153482A Semiconductor dynamic quantity sensor 审中-公开
标题翻译：半导体动态数量传感器
公开(公告)号：JP2006153482A
公开(公告)日：2006-06-15
申请号：JP2004340391
申请日：2004-11-25
申请人： Denso Corp , 株式会社デンソー
发明人： SAKAI MINEICHI
IPC分类号： G01P15/125 , H01L29/84
CPC分类号： G01P15/125 , G01P2015/0814
摘要： PROBLEM TO BE SOLVED: To prevent sensitivity from being affected by the machining variations of the thickness of a beam section and a movable electrode in a capacitance type semiconductor acceleration sensor in which the movable electrode, a fixed electrode, and the beam section are formed by forming a trench on a second silicon substrate supported on the first silicon substrate.
SOLUTION: The semiconductor acceleration sensor 100 has a semiconductor substrate 10 having the second silicon substrate 12 as a semiconductor layer supported on the first silicon substrate 11. A weight section 21 and a movable electrode 24 that can be displaced in a displacement direction X by forming a trench 14 on the second silicon substrate 12, the fixed electrodes 31, 41 arranged opposite to the movable electrode 24, and a beam section 22 for displacing the weight section 21 are formed. In the semiconductor acceleration sensor 100 wherein applied acceleration is detected from a change in the capacitance between the movable electrode 24 and the fixed electrodes 31, 41 when acceleration is applied, the thickness of the beam section 22 is larger than that of the movable electrode 24.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题为了防止灵敏度受电容式半导体加速度传感器中的光束部分和可动电极的厚度的加工变化的影响，其中可动电极，固定电极和光束部分通过在支撑在第一硅衬底上的第二硅衬底上形成沟槽而形成。解决方案：半导体加速度传感器100具有半导体基板10，该半导体基板10具有作为半导体层的第二硅基板12，该半导体基板12被支撑在第一硅基板11上。可以在位移方向上移位的配重部21和可动电极24 通过在第二硅衬底12上形成沟槽14，与可动电极24相对设置的固定电极31,41，以及用于移动配重部21的梁部22。在加速度被施加时，从可动电极24与固定电极31,41之间的电容变化来检测加速度的半导体加速度传感器100中，梁部22的厚度大于可动电极24的厚度（C）2006年，JPO＆NCIPI

90. 发明专利

JP2005349486A Semiconductor device and method of manufacturing the same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2005349486A
公开(公告)日：2005-12-22
申请号：JP2004169641
申请日：2004-06-08
申请人： Denso Corp , 株式会社デンソー
发明人： SAKAI MINEICHI , MIYASHITA KOICHI , ABE RYUICHIRO
IPC分类号： B81C1/00 , H01L21/301
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which is formed by dividing a semiconductor wafer having a protective cap attached thereto so as to cover exposed structures thereof, along scribe regions to obtain semiconductor chips, and then removing the protective cap, wherein an adhesive agent of the protective cap left on each semiconductor chip is reduced to the possible minimum extent. SOLUTION: The semiconductor device 100 is formed by providing the semiconductor wafer 200 having exposed structures 20 exposing movable portions and structures to a surface thereof, attaching the protective cap 300 to the surface of the semiconductor wafer 200 so as to cover the exposed structures 20, dividing the semiconductor wafer along the scribe regions 210 to obtain the semiconductor chips 10, and then removing the protective cap 300 from the surface of each semiconductor chip 10. Herein a step portion 30 formed on the scribe region 210 on a surface of the semiconductor chip 10 is shaped so as to be inclined from a direction Y that is at right angles to a chip surface of the semiconductor chip 10. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：为了提供一种半导体器件，其通过将具有附着于其上的保护帽的半导体晶片分割成覆盖其暴露的结构，沿划线区域形成，以获得半导体芯片，然后去除保护盖，其中留在每个半导体芯片上的保护盖的粘合剂减少到可能的最小程度。解决方案：半导体器件100通过提供具有将可移动部分和结构暴露于其表面的暴露结构20的半导体晶片200形成，将保护盖300附接到半导体晶片200的表面以覆盖暴露的结构20，沿着划线区域210分割半导体晶片以获得半导体芯片10，然后从每个半导体芯片10的表面去除保护盖300.这里，在划线区域210上形成的台阶部分30 半导体芯片10成形为从与半导体芯片10的芯片表面成直角的方向Y倾斜。版权所有（C）2006，JPO＆NCIPI

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式