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1. 发明专利

JP2009047532A Pressure sensor 有权
标题翻译：压力传感器
公开(公告)号：JP2009047532A
公开(公告)日：2009-03-05
申请号：JP2007213487
申请日：2007-08-20
申请人： Denso Corp , 株式会社デンソー
发明人： OTSUKA KIYOSHI , MAKINO YASUAKI , FUKADA TAKESHI
IPC分类号： G01L9/00
摘要： PROBLEM TO BE SOLVED: To make a pressure sensor compact while preventing an electric connection between a sensor chip and a terminal from being cut off.
SOLUTION: A recessed portion 13 is formed on a protrusion 12 disposed at one end of a connector case 10, and a pressure receiving surface of the sensor chip 30 is arranged on the recessed portion 13 so as to be parallel to an introducing direction of a pressure medium. Furthermore, a bonding wire 50 for connecting the sensor chip 30 with the terminal 15 is sealed by the connector case 10. Accordingly, the width of the sensor chip 30 perpendicular to the introducing direction of the pressure medium is shortened, whereby the pressure sensor can be made compact. Furthermore, a pressure of the pressure medium is directly applied to the bonding wire 50, thereby avoiding the bonding wire 50 from being cut, whereby the electric connection between the sensor chip 30 and the terminal 15 can be prevented from being cut off.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了使传感器芯片和端子之间的电连接被阻断而使压力传感器紧凑。解决方案：凹部13形成在设置在连接器壳体10的一端的突起12上，传感器芯片30的受压面设置在凹部13上，以平行于引入压力介质的方向。此外，用于将传感器芯片30与端子15连接的接合线50被连接器壳体10密封。因此，与压力介质的引入方向垂直的传感器芯片30的宽度被缩短，由此压力传感器做得很紧凑此外，压力介质的压力直接施加到接合线50，从而避免接合线50被切割，从而可以防止传感器芯片30和端子15之间的电连接被切断。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2009014484A Pressure sensor 有权
标题翻译：压力传感器
公开(公告)号：JP2009014484A
公开(公告)日：2009-01-22
申请号：JP2007176189
申请日：2007-07-04
申请人： Denso Corp , 株式会社デンソー
发明人： KAKOIYAMA NAOKI , OTSUKA KIYOSHI , MAKINO YASUAKI , FUKADA TAKESHI
IPC分类号： G01L9/00
摘要： PROBLEM TO BE SOLVED: To suppress vibration of a diaphragm of a substrate due to pressure pulsation and extraneous vibration, in a vertically installed pressure sensor constituted by arranging the substrate having the diaphragm in parallel to the direction of introduction of a pressure medium. SOLUTION: A case 1 is constituted by assembling a connector case 10 and a housing 30, and the substrate 20 is arranged in an opening 31b on the side of the connector case 10 of a pressure introduction passage 31. Portions at positions corresponding to the diaphragm 2 being a sensing part out of substrate surfaces 20a, 20b of the substrate 20 parallel to the direction Y of introduction of the pressure medium, are fixed touching the inner surface 30a of the housing 30 constituting the case 1, and are supported with the case 1. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了抑制由于压力脉动和外部振动引起的基板振动膜的振动，在垂直安装的压力传感器中，通过将具有隔膜的基板与压力介质的引入方向平行地构成。解决方案：壳体1通过组装连接器壳体10和壳体30而构成，并且基板20布置在压力引入通道31的连接器壳体10的侧面上的开口31b中。相应位置的部分作为平行于压力介质的引入方向Y的基板20的基板表面20a，20b之外的感测部分的光圈2固定地接触构成壳体1的壳体30的内表面30a，并被支撑案例1.版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2009295720A Method for manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2009295720A
公开(公告)日：2009-12-17
申请号：JP2008146603
申请日：2008-06-04
申请人： Denso Corp , 株式会社デンソー
发明人： ASANO SHUJI , FUKADA TAKESHI
IPC分类号： H01L21/301 , B81C1/00
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing semiconductor devices which can perform dicing without using an exclusive dicing device.
SOLUTION: When forming an MEMS by using an SOI substrate 4, a dicing area of a support substrate 1 is removed by etching, a dicing area of a silicon layer 3 is removed by etching, and then a dicing area of a buried oxide film 2 is also removed by etching to perform a dicing process. Since the dicing process can be performed only by etching, the semiconductor device manufacturing method can perform dicing without using the exclusive dicing device.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以在不使用专用切割装置的情况下进行切割的半导体器件的制造方法。解决方案：通过使用SOI衬底4形成MEMS时，通过蚀刻去除支撑衬底1的切割区域，通过蚀刻去除硅层3的切割区域，然后将掩埋的切割区域氧化膜2也通过蚀刻去除以进行切割处理。由于可以仅通过蚀刻进行切割处理，所以半导体器件的制造方法可以不使用专用的切割装置进行切割。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2007309914A Method of manufacturing physical quantity sensor 审中-公开
标题翻译：制造物理量传感器的方法
公开(公告)号：JP2007309914A
公开(公告)日：2007-11-29
申请号：JP2007009904
申请日：2007-01-19
申请人： Denso Corp , 株式会社デンソー
发明人： ABE RYUICHIRO , FUKADA TAKESHI , FUJII TETSUO
IPC分类号： G01N25/18 , G01F1/692 , G01L9/00 , G01P5/12 , G01P13/00 , G01P15/12 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a physical quantity sensor capable of preventing a membrane from breaking because of becoming too thin. SOLUTION: The buried layer of the SOI substrate (Silicon On Insulator) used for forming a thermal flowrate sensor is not only constituted with one layer of SiO 2 but also a silicon nitride membrane 11 arranged on the surface 10b of the silicon substrate 10. Thereby, at the time of etching the silicon substrate 10, the silicon nitrate membrane 11 is functioned as an etching stopper, therefore the silicon oxide membrane 12 is prevented from being eliminated. Thereby, the thinning of the membrane caused by the being etched of the silicon oxide membrane 12 can be prevented, and breakage caused by the too much thinning the membrane can be prevented. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造能够防止由于变薄而使膜破裂的物理量传感器的方法。解决方案：用于形成热流量传感器的SOI衬底（硅绝缘体）的掩埋层不仅由一层SiO 2 构成，而且还包括一个氮化硅膜11 硅衬底10的表面10b。由此，在蚀刻硅衬底10时，硝酸硅膜11用作蚀刻阻挡层，因此防止氧化硅膜12被消除。由此，可以防止由于氧化硅膜12被蚀刻而引起的薄膜变薄，能够防止膜过薄造成的断裂。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2007279056A Semiconductor mechanical mass sensor 有权
标题翻译：半导体机械传感器
公开(公告)号：JP2007279056A
公开(公告)日：2007-10-25
申请号：JP2007148077
申请日：2007-06-04
申请人： Denso Corp , 株式会社デンソー
发明人： KATO NOBUYUKI , SAKAI MINEICHI , YAMAMOTO TOSHIMASA , FUKADA TAKESHI
IPC分类号： G01P15/125 , G01C19/56 , G01P9/04 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To provide semiconductor mechanical mass sensor, in which circumferential parasitic capacitance, existing in circumference of sensor element, prevents deterioration in sensor sensitivity. SOLUTION: This sensor comprises support substrate and element forming film 200 formed on the supporting substrate. The element forming film 200 is demarcated into sensor element section which has a movable section 2A for detecting capacity variation involving in displacement of the movable section 2A and a periphery section 201 circumferentially-located around the sensor element section, via a groove formed on the element forming film 200; and the periphery section 201 includes a means 202 for stabilizing the electric potential of the periphery section 201. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供存在于传感器元件周围的周向寄生电容的半导体机械质量传感器防止传感器灵敏度的劣化。
解决方案：该传感器包括形成在支撑基板上的支撑基板和元件形成膜200。元件形成膜200被划分为传感器元件部分，该传感器元件部分具有用于检测可移动部分2A的位移的容量变化的移动部分2A和周围位于传感器元件部分周围的周边部分201，该周边部分201经由形成在元件上的凹槽成膜200; 并且周边部分201包括用于稳定周边部分201的电位的装置202.版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2006080351A Manufacturing method of micro-structure 有权
标题翻译：微结构的制造方法
公开(公告)号：JP2006080351A
公开(公告)日：2006-03-23
申请号：JP2004263756
申请日：2004-09-10
申请人： Denso Corp , 株式会社デンソー
发明人： SUGIURA KAZUHIKO , FUKADA TAKESHI , MUTO KOJI
IPC分类号： H01L29/84 , G01P15/125
摘要： PROBLEM TO BE SOLVED: To remove properly by a cheap constitution foreign matters stuck to the movable portions of an accelerating sensor, in a manufacturing method of the accelerating sensor so constituted as to form its movable portions released from a substrate by etching the substrate.
SOLUTION: In the manufacturing method of a capacitive accelerator 100 so constituted as to form as its movable portions movable electrodes 16 released from a substrate 10 by etching the SOI substrate 10, after forming the movable electrodes 16 and stationary electrodes 17 by etching the substrate 10, foreign matters K stuck to the substrate 10 are removed by such the heat treatment of the substrate 10 as the evaporation of the foreign matters K. Subsequently, electrodes 18 of wiring portions are formed in the substrate 10 by such dry processes as drafting and printing.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了通过加速传感器的制造方法中的便宜构成的异物粘附到加速度传感器的可移动部分上，以便通过蚀刻来形成从基板释放的可移动部分基质。解决方案：在电容加速器100的制造方法中，通过蚀刻SOI衬底10形成可移动部分从衬底10释放的可移动电极16，在通过蚀刻形成可动电极16和固定电极17之后通过对异物K的蒸发进行这样的基板10的热处理，去除衬底10上附着有粘附到基板10的异物K.随后，通过这样的干法，在基板10中形成布线部分的电极18，起草和印刷。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2004235328A Hall element 审中-公开
公开(公告)号：JP2004235328A
公开(公告)日：2004-08-19
申请号：JP2003020504
申请日：2003-01-29
申请人： Denso Corp , 株式会社デンソー
发明人： ISOBE YOSHIHIKO , FUKADA TAKESHI
IPC分类号： H01L43/06
摘要： PROBLEM TO BE SOLVED: To provide a Hall element reduced in the variation per hour of an offset voltage/current and low in the cost thereof.
SOLUTION: The Hall element 100 is provided with the principal part of the Hall element 100 or a diffusion area 22 formed on the main surface of a semiconductor substrate 21, while a groove 30 deeper than the diffusion area 22 is formed around the diffusion area 22 perpendicular to the main surface, so as to be symmetrical with respect to the center 22c of the diffusion area on the main surface of the semiconductor substrate 21.
COPYRIGHT: (C)2004,JPO&NCIPI

8. 发明专利

JP2004119674A Silicon anisotropic etching liquid and method for manufacturing semiconductor device using the same 有权
公开(公告)号：JP2004119674A
公开(公告)日：2004-04-15
申请号：JP2002280796
申请日：2002-09-26
申请人： Denso Corp , Toyota Central Res & Dev Lab Inc , 株式会社デンソー , 株式会社豊田中央研究所
发明人： FUJITSUKA TOKUO , MURATA KANAE , FUNABASHI HIROBUMI , KAWASAKI EIJI , FUKADA TAKESHI
IPC分类号： H01L21/308
摘要： PROBLEM TO BE SOLVED: To provide silicon anisotropic etching liquid for selectively etching only silicon without etching aluminum.
SOLUTION: A problem is solved with anisotropic etching solution where silicon is dissolved into 3.0 to 20.0 mass % of TMAH water solution so that it becomes 0.9 to 8.0 mass % and oxidant is added or silicon anisotropic etching solution comprising 3.0 to 20.0 mass % of TMAH, silicon and ammonium nitrate.
COPYRIGHT: (C)2004,JPO

9. 发明专利

JP2006220672A Manufacturing method of semiconductor acceleration sensor 审中-公开
标题翻译：半导体加速传感器的制造方法
公开(公告)号：JP2006220672A
公开(公告)日：2006-08-24
申请号：JP2006147007
申请日：2006-05-26
申请人： Denso Corp , 株式会社デンソー
发明人： FUKADA TAKESHI , MUTO KOJI , FUJINO SEIJI
IPC分类号： G01P15/125
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a capacity type semiconductor acceleration sensor, not generating problems such as adhesion of a moving part and a fixed electrode.
SOLUTION: This sensor wherein a moving electrode 4 of the moving part 1 is arranged oppositely to the fixed electrodes 6, 7 and an acceleration is detected based on a capacity change between the moving electrode 4 and the fixed electrodes 6, 7 when the moving part 1 is displaced by receiving the acceleration, is constituted of an SOI substrate 20 having an insulating layer 22 between the first semiconductor layer 21 and the second semiconductor layer 23. PIQ 30 and a resist 31 are applied from the surface, and prescribed domains of the first semiconductor layer 21 and the insulating layer 22 are removed from the back surface, to thereby expose the second semiconductor layer 23 in a domain where the moving part 1 and the fixed electrodes 6, 7 are formed. Penetrating grooves 10 are formed in the removed region on the second semiconductor layer 23, and the moving part 1 and the fixed electrodes 6, 7 are formed on the second semiconductor layer 23 by the penetrating grooves 10.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供容量型半导体加速度传感器的制造方法，不产生诸如移动部分和固定电极的粘附的问题。解决方案：该传感器，其中移动部分1的移动电极4与固定电极6,7相对地布置，并且基于移动电极4和固定电极6,7之间的电容变化来检测加速度，移动部分1通过接收加速度而移位，由在第一半导体层21和第二半导体层23之间具有绝缘层22的SOI衬底20构成。从表面施加PIQ 30和抗蚀剂31，并且规定从背面去除第一半导体层21和绝缘层22的畴，从而在形成有移动部分1和固定电极6,7的区域中露出第二半导体层23。穿透槽10形成在第二半导体层23上的去除区域中，并且移动部分1和固定电极6,7通过穿透槽10形成在第二半导体层23上。版权所有（C） 2006年，JPO＆NCIPI

10. 发明专利

JP2004353070A Production method for structure 有权
标题翻译：结构生产方法
公开(公告)号：JP2004353070A
公开(公告)日：2004-12-16
申请号：JP2003155582
申请日：2003-05-30
申请人： Denso Corp , Toyota Central Res & Dev Lab Inc , 株式会社デンソー , 株式会社豊田中央研究所
发明人： SHIMAOKA KEIICHI , FUJITSUKA TOKUO , YOKURA HISANORI , KAWASAKI EIJI , FUKADA TAKESHI
IPC分类号： C23F1/44 , C23F1/40
摘要： PROBLEM TO BE SOLVED: To prevent a structural layer 140 from being deformed or broken by etching in producing a structure.
SOLUTION: An etching separation layer 120 is formed on a substrate 110; a sacrificial layer 130 is formed on the etching separation layer 120; a structural layer 140 is formed on the sacrificial layer 130; and a penetration hole 150 is formed in the structural layer 140. A first etchant selectively etching the sacrificial layer 130 and not etching the etching separation layer 120 is supplied through the penetration hole 150 to the sacrificial layer 130 to remove it. A second etchant for etching the etching separation layer 120 and the substrate 110 is supplied through the penetration hole 150 to the etching separation layer 120 and the substrate 110 to remove them.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了防止结构层140在制造结构时通过蚀刻而变形或破裂。解决方案：在衬底110上形成蚀刻分离层120; 在蚀刻分离层120上形成牺牲层130; 在牺牲层130上形成结构层140; 并且在结构层140中形成穿透孔150.选择性地蚀刻牺牲层130并且不蚀刻蚀刻分离层120的第一蚀刻剂通过穿透孔150被供给到牺牲层130以将其去除。用于蚀刻蚀刻分离层120和基板110的第二蚀刻剂通过穿透孔150供应到蚀刻分离层120和基板110以将其去除。版权所有（C）2005，JPO＆NCIPI

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