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71. 发明专利

JP2014500608A Method of manufacturing a memory element of the three-dimensional structures and devices 有权
公开(公告)号：JP2014500608A
公开(公告)日：2014-01-09
申请号：JP2013531511
申请日：2011-10-06
申请人：ユ−ジーンテクノロジーカンパニー.リミテッド
发明人：キルチョ，ソン , ウォンキム，ハイ , ホウ，サン , ウシン，スン , ソンチャン，キル , スクオ，ワン
IPC分类号： H01L21/336 , H01L21/302 , H01L21/306 , H01L21/31 , H01L21/316 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L21/306 , C23C16/4585 , H01L21/02126 , H01L21/02129 , H01L21/02164 , H01L21/02211 , H01L21/02271 , H01L21/30604 , H01L21/31111 , H01L21/67069 , H01L27/11578 , H01L27/11582 , H01L29/66833 , H01L29/7926
摘要：【課題】３次元構造のメモリ素子を製造する方法及び装置を提供する。
【解決手段】本発明の一実施形態による垂直構造のメモリ素子を製造する方法は，基板上に１つ以上の絶縁層及び１つ以上の犠牲層を交互に積層するステップ；前記絶縁層及び前記犠牲層を貫通する貫通孔を形成するステップ；前記貫通孔を埋めるパターンを形成するステップ；前記絶縁層及び前記犠牲層を貫通する開口を形成するステップ；及び前記開口を介してエッチャントを供給して前記犠牲層を除去するステップを含み，前記絶縁層を積層するステップは，前記基板にＳｉＨ
4 ，Ｓｉ
2 Ｈ
6 ，Ｓｉ
3 Ｈ
8 ，Ｓｉ
4 Ｈ
10 を含む群から選択された１つ以上のガスを供給して第１シリコン酸化膜を蒸着するステップを含み，前記犠牲層を積層するステップは，前記基板にジクロロシラン（ＳｉＣｌ
2 Ｈ
2 ）を供給して第２シリコン酸化膜を蒸着するステップを含む。
【選択図】図６

72. 发明专利

JP2013545285A Module for ozone and cured after moisture treatment 审中-公开
公开(公告)号：JP2013545285A
公开(公告)日：2013-12-19
申请号：JP2013532926
申请日：2011-10-05
申请人：アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人：ドミトリールボミルスキー， , セカンド，ジェイ，ディー．パンソン , カービィ，エイチ．フロイド， , アディーブカーン， , シャンカーヴェンカタラマン，
IPC分类号： H01L21/677
CPC分类号： F26B25/004 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02337 , H01L21/3105 , H01L21/67178 , H01L21/6719 , H01L21/67196 , H01L21/67201 , H01L21/67207
摘要： A substrate processing system that has a plurality of deposition chambers, and one or more robotic arms for moving a substrate between one or more of a deposition chamber, load lock holding area, and a curing and treatment module. The substrate curing and treatment module is attached to the load-lock substrate holding area, and may include: The curing chamber for curing a dielectric layer in an atmosphere comprising ozone, and a treatment chamber for treating the cured dielectric layer in an atmosphere comprising water vapor. The chambers may be vertically aligned, have one or more access doors, and may include a heating system to adjust the curing and/or heating chambers between two or more temperatures respectively.

73. 发明专利

JP5342140B2 Method of depositing a porous membrane 有权
公开(公告)号：JP5342140B2
公开(公告)日：2013-11-13
申请号：JP2007527982
申请日：2005-08-16
申请人：セシリアワイマック , カムエスロー
发明人：セシリアワイマック , カムエスロー
IPC分类号： H01L21/316 , H01L21/312 , H01L21/768 , H01L23/532
CPC分类号： H01L21/7682 , H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02337 , H01L21/3124 , H01L21/31625 , H01L21/31629 , H01L21/31695 , H01L2221/1047

74. 发明专利

JP2013225660A Method for manufacturing semiconductor device, substrate processing method, substrate processing device, and program 有权
标题翻译：制造半导体器件的方法，衬底处理方法，衬底处理器件和程序
公开(公告)号：JP2013225660A
公开(公告)日：2013-10-31
申请号：JP2013030452
申请日：2013-02-19
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： HIROSE YOSHIRO , SASAJIMA RYOTA , NAKAMURA YOSHINOBU , YAMAMOTO TAKAHARU
IPC分类号： H01L21/318 , H01L21/31
CPC分类号： H01L21/0228 , C23C16/30 , C23C16/45531 , C23C16/45546 , C23C16/45557 , H01L21/02126 , H01L21/02167 , H01L21/02211
摘要： PROBLEM TO BE SOLVED: To reduce the total supply amount of reaction gas without reducing concentrations of oxygen, nitrogen, carbon or the like which are included in a thin film.SOLUTION: A method for manufacturing a semiconductor device comprises a step of forming a thin film on a substrate by performing a predetermined number of times of cycles that include a step of supplying raw material gas to the substrate in a processing chamber, and a step of supplying reaction gas to the substrate in a processing chamber. In at least one of the steps of the step of supplying raw material gas and the step of supplying reaction gas, a first supply step and a second supply step are performed. In the first supply step, one of the raw material gas and the reaction gas used in the step is supplied at a first flow rate until a pressure in the processing chamber is increased to a predetermined pressure, while the evacuation of the processing chamber is stopped. In the second supply step, after the pressure in the processing chamber has been increased to the predetermined pressure, the one of the raw material gas and the reaction gas used in the step is supplied at a second flow rate lower than the first flow rate in a state where the evacuation of the processing chamber is performed while the pressure in the processing chamber is maintained at the predetermined pressure.
摘要翻译：要解决的问题：减少反应气体的总供应量，而不减少包含在薄膜中的氧，氮，碳等的浓度。解决方案：一种制造半导体器件的方法包括：通过在处理室中进行预定次数的循环，包括向基板供给原料气体的步骤，以及在处理室中向基板供给反应气体的步骤，在基板上形成膜。在供给原料气体的工序和供给反应气体的工序的至少一个工序中，进行第一供给工序和第二供给工序。在第一供给步骤中，以第一流量供给在步骤中使用的原料气体和反应气体中的一个，直到处理室内的压力升高至规定的压力，同时停止处理室的抽空。在第二供给步骤中，在处理室中的压力升高到规定压力之后，以比第一流量低的第二流量供给在该工序中使用的原料气体和反应气体中的一个，在处理室中的压力保持在预定压力的同时执行处理室的抽空的状态。

75. 发明专利

JP2013175702A Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：JP2013175702A
公开(公告)日：2013-09-05
申请号：JP2012173294
申请日：2012-08-03
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： ISHIZAKA TADAHIRO , GOMI ATSUSHI , SUZUKI KENJI , HATANO TATSUO , MIZUSAWA YASUSHI
IPC分类号： H01L21/28 , C23C16/02 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L23/532
CPC分类号： H01L21/76879 , C23C16/0272 , C23C16/16 , H01L21/02126 , H01L21/02274 , H01L21/28556 , H01L21/3105 , H01L21/31058 , H01L21/76814 , H01L21/76826 , H01L21/76843 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide reduction in resistance of a conductive path, in formation of a conductive path by embedding a copper material into a recess for embedding which is formed on an interlayer insulating film consisting of a SiCOH film.SOLUTION: When forming a recess on a SiCOH film 1 by plasma, C is detached from the film to form a damage layer, which is then removed with hydrofluoric acid so that the surface becomes hydrophobic. By supplying this SiCOH film 1 with a boron compound gas, a silicon compound gas or a gas comprising trimethyl aluminum, B, Si or Al is adsorbed onto the SiCOH film 1. Their atoms are bonded to Ru, so formation of a Ru film 4 on the SiCOH film is easy. Then using, for example, Ru(CO)gas and CO gas, the Ru film 4 is deposited by CVD and subsequently a copper material 5 is embedded followed by CMP treatment to form a wiring structure on the upper layer side.
摘要翻译：要解决的问题：为了提供导电路径的电阻降低，通过将铜材料嵌入到由SiCOH膜构成的层间绝缘膜上形成的用于嵌入的凹槽中形成导电路径。解决方案：当形成通过等离子体在SiCOH膜1上凹陷，C与膜分离形成损伤层，然后用氢氟酸除去，使得表面变得疏水。通过向SiCOH膜1供给硼化合物气体，硅化合物气体或包含三甲基铝，B，Si或Al的气体吸附在SiCOH膜1上。它们的原子与Ru结合，因此形成Ru膜4 在SiCOH膜上很容易。然后使用例如Ru（CO）气体和CO气体，通过CVD沉积Ru膜4，随后埋入铜材料5，然后进行CMP处理，以在上层侧形成布线结构。

77. 发明专利

JP5270442B2 Porogen, the porogen precursors and methods of using them in order to obtain a porous organosilica glass film having a low dielectric constant 有权
公开(公告)号：JP5270442B2
公开(公告)日：2013-08-21
申请号：JP2009112216
申请日：2009-05-01
申请人：エアプロダクツアンドケミカルズインコーポレイテッドAir Products And Chemicals Incorporated
发明人：ニコラスバーティスレイモンド , レオナルドオニールマーク , ルイーズビンセントジャン , スコットルーカスアーロン , キャスリンハースマリー
IPC分类号： H01L21/316 , C23C14/12 , H01L21/768 , H01L23/522
CPC分类号： C23C16/401 , C23C16/30 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02208 , H01L21/02216 , H01L21/02274 , H01L21/02348 , H01L21/31695
摘要： A chemical vapor deposition method for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including at least one precursor selected from the group consisting of an organosilane and an organosiloxane, and a porogen that is distinct from the precursor, wherein the porogen is a C 4 to C 14 cyclic hydrocarbon compound having a non-branching structure and a degree of unsaturation equal to or less than 2; applying energy to the gaseous reagents in the vacuum chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen; and removing from the preliminary film substantially all of the labile organic material to provide the porous film with pores and a dielectric constant less than 2.6.

78. 发明专利

JP2013140944A Manufacturing method for semiconductor device, substrate processing method, substrate processing device, and program 有权
标题翻译：半导体器件的制造方法，衬底处理方法，衬底处理器件和程序
公开(公告)号：JP2013140944A
公开(公告)日：2013-07-18
申请号：JP2012233850
申请日：2012-10-23
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： HIROSE YOSHIRO , SANO ATSUSHI , WATAHASHI YOSHISATO , HASHIMOTO YOSHITOMO , SHIMAMOTO SATOSHI
IPC分类号： H01L21/314
CPC分类号： H01L21/02126 , C23C16/36 , C23C16/45523 , H01L21/02167 , H01L21/02172 , H01L21/02178 , H01L21/02181 , H01L21/02183 , H01L21/02186 , H01L21/02189 , H01L21/02211 , H01L21/0228 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To form a thin film having characteristics such as a low dielectric constant, high etching resistance, and high leak resistance.SOLUTION: A manufacturing method for a semiconductor device includes a step of forming a thin film including a prescribed element on a substrate by performing a cycle including the following steps a prescribed number of times: forming a first layer including the prescribed element, nitrogen, and carbon by alternately performing a step of supplying a material gas containing the prescribed element and a halogen element to the substrate and a step of supplying a first reaction gas which is composed of three elements of carbon, nitrogen, and hydrogen to the substrate and in which the number of carbon atoms is greater than the number of nitrogen atoms in a composition formula; and modifying the first layer to form a second layer by supplying the material gas and a second reaction gas different from the first reaction gas to the substrate.
摘要翻译：要解决的问题：形成具有低介电常数，高耐蚀刻性和高耐漏电性等特性的薄膜。解决方案：一种半导体器件的制造方法，包括：将包含规定元素的薄膜形成在第通过以下步骤进行规定次数的循环：通过交替地进行将含有规定元素和卤素元素的原料气体供给到基板的步骤，形成包含规定元素，氮和碳的第一层以及将由碳，氮和氢的三种元素构成的第一反应气体供给到所述基板中，其中碳原子数大于组成式中的氮原子数的步骤; 以及通过将不同于第一反应气体的材料气体和第二反应气体供给到基板，来修饰第一层以形成第二层。

80. 发明专利

JP2013067607A Film-deposition material, sealing film using the same, and use of sealing film 有权
标题翻译：薄膜沉积材料，使用其的密封膜和密封膜的使用
公开(公告)号：JP2013067607A
公开(公告)日：2013-04-18
申请号：JP2012176433
申请日：2012-08-08
申请人： Tosoh Corp , 東ソー株式会社
发明人： HARA TAIJI , SHIMIZU MASATO
IPC分类号： C07F7/18 , C07F7/08 , G02F1/1333 , H01L21/312 , H01L21/316
CPC分类号： C23C16/401 , C23C16/30 , C23C16/50 , H01L21/02126 , H01L21/02216 , H01L21/02274
摘要： PROBLEM TO BE SOLVED: To obtain a carbon-containing silicon oxide film by depositing an organosilicon compound with a predetermined structure with chemical vapor deposition (CVD), and to use the film as a sealing film.SOLUTION: A film composed of a carbon-containing silicon oxide formed with CVD by using, as a starting material, an organosilicon compound having a secondary hydrocarbon group directly connected with at least one silicon atom, with the atomic ratio of oxygen atoms being 0.5 or less relative to 1 for silicon atoms, for example represented by general formula (1), is used as a sealing film in a gas barrier member, an FPD device, a semiconductor device or the like (wherein each of Rand Rrepresents a 1-20C hydrocarbon group, Rand Rare optionally bonded to each other so as to form a ring structure, and each of Rand Rrepresents a 1-20C hydrocarbon group or a hydrogen atom).
摘要翻译：待解决的问题：通过用化学气相沉积（CVD）沉积具有预定结构的有机硅化合物，并使用该膜作为密封膜来获得含碳氧化硅膜。解决方案：使用以CVD形成的含碳氧化硅作为起始原料的具有与至少一个硅原子直接连接的仲烃基的有机硅化合物与氧原子的原子比构成的膜对于硅原子为0.5以下，例如由通式（1）表示的硅原子，作为阻气性部件，FPD器件，半导体器件等中的密封膜使用（其中R 1 ，R 2 表示1-20C烃基，R 1 和R 2 可选地彼此结合以形成环结构，并且R 3 和R 4 表示1-20C烃基或氢原子）。版权所有（C）2013，JPO＆INPIT

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