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71. 发明专利

JP2013120851A Sensor unit and solid state image pickup device 有权
标题翻译：传感器单元和固态图像拾取器件
公开(公告)号：JP2013120851A
公开(公告)日：2013-06-17
申请号：JP2011268166
申请日：2011-12-07
申请人： Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： FUJITA KAZUKI , KUSHIMA TATSUJI , MORI HARUMICHI , OKADA HARUYOSHI , SAWADA JUNICHI
IPC分类号： H01L27/14 , G01T7/00 , H01L27/144 , H04N5/32 , H04N5/369
CPC分类号： H01L31/024 , G01T1/00 , H01L27/14618 , H01L27/14623 , H01L27/14632 , H01L27/14663 , H01L2224/48091 , H01L2224/48137 , H04N5/2257 , H04N5/32 , H04N5/378 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a sensor unit and a solid state image pickup device which reduce the influences of heat generated from a semiconductor chip on a solid state image sensor.SOLUTION: A sensor unit 2A includes: a metal base member 20A; a solid state image sensor 30; and an amplifier chip 40. The base member 20A has a first placement surface 21a and a second placement surface 21b. The solid state image sensor 30 has a light reception surface 32 and is disposed on the first placement surface 21a so that a rear surface 33 and the first placement surface 21a face each other. The amplifier chip 40 is mounted on a substrate 50 disposed on the second placement surface 21b. The base member 20A further has a side wall part 25 facing a side surface of the solid state image sensor 30. The amplifier chip 40 and the solid state image sensor 30 are electrically connected with each other through a bonding wire 92. The amplifier chip 40 thermally couples to the base member 20A through a thermal via 53 of the substrate 50.
摘要翻译：要解决的问题：提供一种传感器单元和固态图像拾取装置，其减少从半导体芯片产生的热量对固态图像传感器的影响。传感器单元2A包括：金属基底构件20A; 固态图像传感器30; 和放大器芯片40.基座部件20A具有第一放置面21a和第二放置面21b。固态图像传感器30具有受光面32，并且设置在第一放置面21a上，使得后表面33和第一放置面21a彼此面对。放大器芯片40安装在设置在第二放置面21b上的基板50上。基部构件20A还具有面向固态图像传感器30的侧面的侧壁部25.放大器芯片40和固态图像传感器30通过接合线92电连接。放大器芯片40 通过衬底50的热通孔53热耦合到基底构件20A上。（C）2013，JPO和INPIT

72. 发明专利

JP2013120801A Semiconductor laser element and laser beam deflector 有权
标题翻译：半导体激光元件和激光光束偏转器
公开(公告)号：JP2013120801A
公开(公告)日：2013-06-17
申请号：JP2011267186
申请日：2011-12-06
申请人： Kyoto Univ , 国立大学法人京都大学 , Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： NODA SUSUMU , KUROSAKA YOSHITAKA , WATANABE AKIYOSHI , HIROSE KAZUYOSHI , SUGIYAMA TAKAHIRO
IPC分类号： H01S5/50
CPC分类号： H01S5/105 , H01S5/0425 , H01S5/06243 , H01S5/1085 , H01S5/1218 , H01S5/323 , H01S5/34313 , H01S5/4056
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser element and a laser beam deflector, which emit laser beams only in a single direction and which can change the emission direction.SOLUTION: In a semiconductor laser element, a longer direction of a first drive electrode E2 is inclined with respect to a normal line (Y axis) of a light emission surface LES of the semiconductor laser element. And a region Δ1 of a photonic crystal layer 4 corresponding to a first region R has first and second periodic structures respectively having arrangement periods different from each other, of different refraction factor parts 4B each having refraction factor different from a refraction factor of a surrounding area. More than one laser beam is generated inside the semiconductor laser element, which forms a predetermined angle (δθ) with respect to a longer direction (B direction) of the first drive electrode E2 corresponding to a difference between inverse numbers of the arrangement periods (a1, a2) in the respective first and second periodic structures, when viewed from a thickness direction of the semiconductor laser element. One laser beam among the laser beams is set to be totally reflected at the light emission surface, and the other laser beam is set to have a refracting angle θ3 of less then 90 degrees.
摘要翻译：要解决的问题：提供半导体激光元件和激光束偏转器，其仅在单个方向上发射激光束并且可以改变发射方向。解决方案：在半导体激光元件中，第一驱动电极E2的较长方向相对于半导体激光元件的发光面LES的法线（Y轴）倾斜。并且与第一区域R对应的光子晶体层4的区域Δ1分别具有彼此不同的布置周期的不同折射系数部分4B的折射系数不同于周围区域的折射系数的第一和第二周期结构。在半导体激光元件内产生多于一个的激光束，该激光束相对于第一驱动电极E2的长度方向（B方向）形成与排列周期（a1）的倒数的差对应的预定角度（δθ），a2）在从半导体激光元件的厚度方向观察时在各自的第一和第二周期结构中。将激光束中的一个激光束设定为在发光面全反射，另一方的激光束的折射角度θ3小于90度。版权所有（C）2013，JPO＆INPIT

73. 发明专利

JP2013101041A Nondestructive inspection device, and method of detecting displacement with the device 有权
标题翻译：非结构性检查装置，以及用于检测与装置的位移的方法
公开(公告)号：JP2013101041A
公开(公告)日：2013-05-23
申请号：JP2011244660
申请日：2011-11-08
申请人： Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： SUYAMA TOSHIYASU
IPC分类号： G21K5/00 , G01N23/04 , G01T7/00 , G21K5/10
CPC分类号： G01N23/083 , G01N2223/423 , G01N2223/618 , G01N2223/643 , G01V5/0041
摘要： PROBLEM TO BE SOLVED: To provide a nondestructive inspection device that quickly notifies a mismatch between pixels of two radiation detectors overlapping each other.SOLUTION: A nondestructive inspection device 1 includes an X-ray emitter 20, a low-energy detector 32, a high-energy detector 42, a low-energy transmittance calculation unit 72, a high-energy transmittance calculation unit 74, and a detection unit 76. The low-energy transmittance calculation unit 72 calculates transmittance in a low-energy range of an X ray having transmitted through a sample S to be inspected, on the basis of luminance data detected by the low-energy detector 32. The high-energy transmittance calculation unit 74 calculates transmittance in a high-energy range of the X ray having transmitted through a sample S to be inspected, on the basis of luminance data detected by the high-energy detector 42. The detection unit 76 detects displacement of the X-ray emitter 20 on the basis of a ratio in the transmittance calculated by the low-energy transmittance calculation unit 72 and the high-energy transmittance calculation unit 74.
摘要翻译：要解决的问题：提供一种快速通知两个辐射探测器的像素彼此重叠的不匹配的非破坏性检查装置。解决方案：非破坏性检查装置1包括X射线发射器20，低能量检测器32，高能量检测器42，低能透射率计算单元72，高能透射率计算单元74，低能量透射率计算单元72基于由低能量检测器32检测的亮度数据，计算已经透过被检测样品S的X射线的低能量范围内的透射率高能透射率计算单元74基于由高能量检测器42检测的亮度数据，计算已经透过被检测样品S的X射线的高能量范围内的透射率。检测单元76 基于由低能透射率计算单元72和高能透射率计算单元74计算的透射率的比例，检测X射线发射器20的位移。（C）2013，JPO和INPIT

74. 发明专利

JP2013098851A Capacitive load drive circuit 有权
标题翻译：电容式负载驱动电路
公开(公告)号：JP2013098851A
公开(公告)日：2013-05-20
申请号：JP2011241337
申请日：2011-11-02
申请人： Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： YAMAGISHI SHOGO , FUJIMOTO MASATOSHI , TAKAHASHI SATOSHI
IPC分类号： H03K4/02 , G02F1/03 , H01S3/107
CPC分类号： H02M7/537 , G02F1/0327 , H01S3/0057 , H01S3/0064 , H01S3/08 , H01S3/1075 , H01S3/235 , H03K4/023 , H03K17/102 , H03K17/691 , H03K2017/6875 , H03K2217/009 , Y10T307/549
摘要： PROBLEM TO BE SOLVED: To provide a circuit that can feed staircase high voltage pulses to a capacitive load and can vary the number of steps, the voltage variation of each step and the duration of each step.SOLUTION: A drive circuit 1A for selectively outputting either a staircase wave or a rectangular wave from an output end 11 to drive a capacitive load 52 includes: a high voltage power supply 41 for supplying a constant voltage VH; an FET 21 connected in series between the output end 11 and the high voltage power supply 41; a transformer 22 having an output side coil connected to a gate of the FET 21; an input end 12a connected to an input side coil of the transformer 22 via a capacitive element 23; a high voltage power supply 42 for supplying a constant voltage VL lower than the constant voltage VH; an FET 31 connected in series between the output end 11 and the high voltage power supply 42; a transformer 32 having an output side coil connected to a gate of the FET 31; and an input end 12b connected to an input side coil of the transformer 32 via a capacitive element 33.
摘要翻译：要解决的问题：提供一种能够将阶梯高电压脉冲馈送到电容性负载的电路，并且可以改变步骤的数量，每个步骤的电压变化和每个步骤的持续时间。解决方案：用于从输出端11选择性地输出阶梯波或矩形波以驱动电容性负载52的驱动电路1A包括：用于提供恒定电压VH的高压电源41; 串联连接在输出端11和高压电源41之间的FET21; 具有连接到FET21的栅极的输出侧线圈的变压器22; 通过电容元件23连接到变压器22的输入侧线圈的输入端12a; 用于提供低于恒定电压VH的恒定电压VL的高压电源42; 串联连接在输出端11和高电压电源42之间的FET31; 具有连接到FET31的栅极的输出侧线圈的变压器32; 以及经由电容元件33连接到变压器32的输入侧线圈的输入端12b。（C）2013，JPO和INPIT

75. 发明专利

JP2013098407A Solar battery related sample measurement system 有权
标题翻译：太阳能电池相关样品测量系统
公开(公告)号：JP2013098407A
公开(公告)日：2013-05-20
申请号：JP2011241006
申请日：2011-11-02
申请人： Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： IGUCHI KAZUYA , IKEMURA KENICHIRO
IPC分类号： H01L31/04 , G01N21/64
CPC分类号： G01N21/6489 , H02S50/10
摘要： PROBLEM TO BE SOLVED: To provide a solar battery related sample measurement system which preferably conducts characteristics measurement of a sample using a photoluminescence method.SOLUTION: A sample measurement system 1A is composed of a solar simulator 10 and an additional measurement device 20. The solar simulator 10 has a stage 11 on which a sample S is placed, a white light supply part 13, and a housing part 15. The additional measurement device 20 has a body part 21 and a PL measurement unit 22 formed so as to move between a measurement position where the PL measurement unit 22 is inserted into a position on a measurement optical path and a stand-by position where the PL measurement unit 22 is departed from the measurement path. Further, the PL measurement unit 22 has: an optical filter 23 converting white light from the supply part 13 to excitation light; a measured light detection part 24 detecting measured light emitted from the sample S to which the excitation light is radiated; and a unit frame part 25 integrally holding the filter 23 and the detection part 24.
摘要翻译：要解决的问题：提供一种太阳能电池相关的样品测量系统，其优选使用光致发光法进行样品的特性测量。样品测量系统1A由太阳模拟器10和附加测量装置20组成。太阳模拟器10具有载置样品S的台11，白光供应部13和壳体附加测量装置20具有主体部分21和PL测量单元22，其形成为在PL测量单元22被插入到测量光路上的位置的测量位置和待测位置之间移动其中PL测量单元22离开测量路径。此外，PL测量单元22具有：将来自供给部13的白光转换为激发光的滤光器23; 测量光检测部分24，检测从激发光辐射的样品S发射的测量光; 以及整体地保持过滤器23和检测部24的单位框架部分25.（C）2013，JPO＆INPIT

76. 发明专利

JP2013098252A Manufacturing method of quantum cascade laser 有权
标题翻译：量子激光器的制造方法
公开(公告)号：JP2013098252A
公开(公告)日：2013-05-20
申请号：JP2011237704
申请日：2011-10-28
申请人： Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： SUGIYAMA ATSUSHI , AKIKUSA NAOHIRO , EDAMURA TADATAKA
IPC分类号： H01S5/12 , G03F7/40 , H01S5/0687
CPC分类号： H01S3/08009 , B29C33/424 , B29C2033/426 , B82Y10/00 , B82Y20/00 , B82Y40/00 , G03F7/0002 , H01S5/124 , H01S5/3401 , H01S5/3402
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a quantum cascade laser capable of obtaining stable single-mode oscillation by manufacturing a diffraction grating with high accuracy.SOLUTION: The quantum cascade laser manufacturing method includes steps of: pressing a mother stamper on a flexible resin film, to manufacture a resin stamper 201 having a second groove pattern P2 with recesses and projections reverse to a first groove pattern; manufacturing a wafer having an active layer formed on a semiconductor substrate; forming a resist film 304 on a wafer surface on the active layer side; pressing the resin stamper on the resist film 304 by air pressure, to form a third groove pattern P3 having recesses and projections reverse to the second groove pattern P2; and etching the wafer using the resist film 304 as a mask, to form the diffraction grating on the wafer surface.
摘要翻译：解决的问题：提供能够通过以高精度制造衍射光栅来获得稳定的单模振荡的量子级联激光器的制造方法。解决方案：量子级联激光器制造方法包括以下步骤：将母模压在柔性树脂膜上，制造具有第二凹槽图案P2的树脂压模201，其具有与第一凹槽图案相反的凹陷和突起; 制造具有形成在半导体衬底上的有源层的晶片; 在有源层侧的晶片表面上形成抗蚀剂膜304; 通过空气压力将树脂压模压在抗蚀剂膜304上，形成具有与第二凹槽图案P2相反的凹凸的第三凹槽图案P3; 并使用抗蚀剂膜304作为掩模蚀刻晶片，以在晶片表面上形成衍射光栅。版权所有（C）2013，JPO＆INPIT

77. 发明专利

JP2013098251A Quantum cascade laser 有权
标题翻译：量子CASCADE激光
公开(公告)号：JP2013098251A
公开(公告)日：2013-05-20
申请号：JP2011237702
申请日：2011-10-28
申请人： Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： EDAMURA TADATAKA , SUGIYAMA ATSUSHI , AKIKUSA NAOHIRO
IPC分类号： H01S5/343 , H01S5/12
CPC分类号： H01S5/3401 , B82Y20/00 , H01S5/12 , H01S5/124 , H01S5/3402
摘要： PROBLEM TO BE SOLVED: To provide a quantum cascade laser capable of attaining both a wide gain width and element characteristics.SOLUTION: A quantum cascade laser 1 includes: a semiconductor substrate; an active layer 15 which is provided on the substrate and has a cascade structure in which a unit laminate 16 formed of a light-emitting layer and an injection layer is laminated in multiple stages; and a diffraction grating layer 20. The unit laminate 16 has a first light emission upper level L, a second light emission upper level L, and a plurality of light emission lower levels Lin its sub-band level structure, one of the first and second upper levels is a level originating in a ground level in a first well layer, and the other is a level originating in an excitation level in a well layer excluding the first well layer. An energy interval between the first upper level and the second upper level is set to be smaller than the energy of an LO phonon, and an energy interval between the second upper level and a high energy level Lis set to be larger than the energy of the LO phonon.
摘要翻译：要解决的问题：提供能够实现宽增益宽和元件特性的量子级联激光器。解决方案：量子级联激光器1包括：半导体衬底; 有源层15设置在基板上并具有级联结构，其中由发光层和注入层形成的单元叠层16多层叠; 和衍射光栅层20.单位层叠体16具有第一发光上层L up1 ，第二发光上层L up2 < / SB>，并且在其子带级结构中具有多个发光较低电平L 低，第一和第二较高电平之一是源于地电平的电平在第一阱层中，另一个是源自除了第一阱层之外的阱层中的激发电平的电平。将第一上限电平和第二上限电平之间的能量间隔设定为小于LO声子的能量，并且将第二上限电平与高能量电平L 被设置为大于LO声子的能量。版权所有（C）2013，JPO＆INPIT

78. 发明专利

JP2013088520A Observation device 有权
标题翻译：观察装置
公开(公告)号：JP2013088520A
公开(公告)日：2013-05-13
申请号：JP2011227119
申请日：2011-10-14
申请人： Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： IWAI HIDENAO , IKEDA TAKAHIRO
IPC分类号： G03H1/16 , G01N21/64 , G02B21/00 , G03H1/04 , G03H1/22
摘要： PROBLEM TO BE SOLVED: To provide an observation device capable of obtaining a fluorescent image of a moving object even when using an optical detector in which reading speed per one pixel is low, without blur with movement (motion blur), consequently, without deteriorating spatial resolution.SOLUTION: An observation device 1 includes: a light source portion 10; a first modulator 20; a second modulator 30; a lens 40; a beam splitter 41; an optical detector 46; and a computing portion 50. The lens 40 forms a Fourier transform image of an object 2 by inputting fluorescent light generated in the moving object 2. The optical detector 46 outputs data indicating a sum total in a v-direction of data changing timewise by a frequency corresponding to the Doppler shift amount of light reaching each position on a light receiving surface through the lens 40, at each time about each position in a u-direction. The computing portion 50 obtains an image of the object 2 on the basis of the output of the optical detector 46.
摘要翻译：要解决的问题：即使使用每一像素的读取速度低的光学检测器，即使没有运动模糊（运动模糊）也能够提供能够获得移动物体的荧光图像的观察装置，而不会降低空间分辨率。解决方案：观察装置1包括：光源部分10; 第一调制器20; 第二调制器30; 透镜40; 分束器41; 光学检测器46; 透镜40通过输入在移动物体2中产生的荧光，形成物体2的傅里叶变换图像。光检测器46输出表示数据变化的v方向上的总和的数据，频率对应于通过透镜40到达光接收表面上的每个位置的光的多普勒偏移量，每次在u方向上的每个位置处。计算部分50基于光学检测器46的输出获得对象2的图像。版权所有：（C）2013，JPO＆INPIT

79. 发明专利

JP2013088319A Radiation detection device 有权
标题翻译：辐射检测装置
公开(公告)号：JP2013088319A
公开(公告)日：2013-05-13
申请号：JP2011229911
申请日：2011-10-19
申请人： Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： NAKAMURA SHIGEYUKI , HIRAYANAGI MICHIHITO , MATSUMOTO TAKUYA , SAKURAI NAOTO , ADACHI SHUNSUKE
IPC分类号： G01T1/20
摘要： PROBLEM TO BE SOLVED: To provide a radiation detection device capable of suppressing an increase in power consumption and a signal processing time while being minimized.SOLUTION: A radiation detection device RD includes a storage container 1 having a side face part 2 and a bottom surface part 3, a first scintillator 10 arranged in the storage container 1 so as to surround the side face part 2, a second scintillator 20 arranged in the storage container 1 and smaller than the first scintillator 10, a plurality of first semiconductor photodetectors 30 and 31 for detecting scintillation light from the first scintillator 10, a second semiconductor photodetector 40 for detecting scintillation light from the second scintillator 20, a plurality of first counting parts 51 for counting light emission of the scintillation light on the basis of output signals from the corresponding first semiconductor photodetectors 30 and 31 to output a counted signal, and a wave height value measurement part 71 for measuring a wave height value of an output signal from the second semiconductor photodetector 40 to output a wave height value measurement signal.
摘要翻译：要解决的问题：提供能够抑制功耗增加和信号处理时间最小化的放射线检测装置。解决方案：放射线检测装置RD包括具有侧面部分2和底面部分3的存储容器1，以包围侧面部分2的方式布置在存储容器1中的第一闪烁体10，第二个配置在存储容器1内并小于第一闪烁器10的闪烁体20，多个用于检测来自第一闪烁体10的闪烁光的第一半导体光电探测器30和31，用于检测来自第二闪烁器20的闪烁光的第二半导体光电检测器40，多个第一计数部51，用于根据来自相应的第一半导体光电检测器30和31的输出信号计数闪烁光的发光，以输出计数信号;以及波高值测量部71，用于测量波高值来自第二半导体光电检测器40的输出信号，以输出波高值测量信号。版权所有（C）2013，JPO＆INPIT

80. 发明专利

JP2013083766A Method for manufacturing microphase separated structure film 有权
标题翻译：制造微波分离结构薄膜的方法
公开(公告)号：JP2013083766A
公开(公告)日：2013-05-09
申请号：JP2011222982
申请日：2011-10-07
申请人： Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： YAMANAKA TAKAHIKO , HARA SHIGEO
IPC分类号： G02B1/02 , C08J9/28
摘要： PROBLEM TO BE SOLVED: To easily obtain a microphase separated structure film having excellent optical characteristics.SOLUTION: A method for manufacturing a microphase separated structure film 10 comprises the steps of: obtaining a resin film by photopolymerizing a photopolymerizable monomer by irradiating a solution containing a block copolymer, a photopolymerizable monomer, a photopolymerization initiator and a plasticizer with light; impregnating a solvent into the resin film to remove the plasticizer; and removing the solvent from the resin film to obtain a film 10, wherein the block copolymer has a first polymer chain and a second polymer chain, the resin film contains a microdomain 15a containing the first polymer chain and a microdomain 15b containing the second polymer chain, the compatibility of the solvent with the first polymer chain is higher than the compatibility of the solvent with the second polymer chain and a hole 17 is selectively formed in the microdomain 15a rather than in the microdomain 15b.
摘要翻译：要解决的问题：为了容易地获得具有优异的光学特性的微相分离结构膜。解决方案：制造微相分离结构膜10的方法包括以下步骤：通过将含有嵌段共聚物，光聚合单体，光聚合引发剂和增塑剂的溶液与光照射来获得光聚合单体的光聚合来获得树脂膜 ; 将溶剂浸渍到树脂膜中以除去增塑剂; 从树脂膜除去溶剂，得到膜10，其中嵌段共聚物具有第一聚合物链和第二聚合物链，树脂膜含有含有第一聚合物链的微区15a和含有第二聚合物链的微区15b 溶剂与第一聚合物链的相容性高于溶剂与第二聚合物链的相容性，并且在微区15a而不是微区15b中选择性地形成孔17。版权所有（C）2013，JPO＆INPIT

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