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61. 发明专利

JPS60195091A Production of diamond thin film 失效
标题翻译：生产金刚石薄膜
公开(公告)号：JPS60195091A
公开(公告)日：1985-10-03
申请号：JP4976884
申请日：1984-03-15
申请人： Namiki Precision Jewel Co Ltd
发明人： WAKANA KAZUO
IPC分类号： C30B25/04 , C30B25/02
CPC分类号： C30B25/02 , C30B29/04
摘要： PURPOSE:To form a thin diamond film having excellent adhesivity to the substrate and high abrasion resistance and hardness, by using a diamond free from crystal defect as the substrate, and introducing a hydrocarbon into a plasma to effect the thermal decomposition of the hydrocarbon. CONSTITUTION:A diamond free from crystal defect (the shadow of the strain caused by the crystal defects such as lattice defects cannot be discerned by naked eyes through a polarizer such as a polaroid film or nicol prism) is used as a substrate. A mixture of hydrocarbon and hydrogen gas is introduced into a plasma to effect the thermal decomposition of the hydrocarbon and the epitaxial growth of a thin diamond film on the substrate. A thin diamond film having high abrasion resistance and hardness, excellent adhesivity to the substrate, and absolutely free of cracks and peeling can be produced by this process.
摘要翻译：目的：通过使用不含晶体缺陷的金刚石作为基材，通过使用将烃引入等离子体中以形成烃的热分解，形成对基材具有优异的粘合性和高耐磨性和硬度的薄金刚石膜。构成：使用没有晶体缺陷的金刚石（由晶状体缺陷引起的应变的阴影不能通过诸如偏光镜的偏光镜或尼古棱棱镜被肉眼辨别）用作基板。将烃和氢气的混合物引入等离子体中以实现烃的热分解和在衬底上的薄金刚石膜的外延生长。通过该方法可以制造具有高耐磨性和硬度，对基材的粘合性优异且绝对没有裂纹和剥离的薄金刚石薄膜。

62. 发明专利

JPS6016420A SELECTIVE EPITAXIAL GROWTH METHOD 失效
公开(公告)号：JPS6016420A
公开(公告)日：1985-01-28
申请号：JP12523683
申请日：1983-07-08
申请人： MITSUBISHI ELECTRIC CORP
发明人： HINE SHIROU
IPC分类号： H01L21/205 , C30B25/04 , H01L21/20 , H01L21/311
摘要： PURPOSE:To eliminate generation of crystal defect at the periphery of semiconductor layer and obtain flat grown layer by providing an aperture through anisotropic dry etching and realizing epitaxial growth under a reduced pressure of at least 100Torr or less with the remaining film used as the mask, at the time of boring an aperture to an insulating film deposited on the surface of semiconductor substrate and forming a semiconductor layer by the epitaxial growth on the exposed substrate surface. CONSTITUTION:An SiO2 insulating film 2 is deposited on the surface of a semiconductor substrate 1, the area other than the specified region is covered with a resist film 3 by the photo-engraving method, and an aperture 6 is formed on the film 2 by the parallel flat plate type anisotropic dry etching apparatus with the mixed gas of CF4 and H2 used as the etchant. Then, the film 3 unwanted is removed and a semiconductor layer 7 is formed by the epitaxial growth method on the substrate 1 exposed to the aperture 6 under the reduced pressure condition. In this case, a mixed gas of H2 carrier gas and SiH2Cl2 is used, pressure is set to 100Torr or less and temperature is set to 900-1,100 deg.C for the epitaxial growth.

63. 发明专利

JPS605098A PRODUCTION OF COMPOUND CRYSTAL 失效
公开(公告)号：JPS605098A
公开(公告)日：1985-01-11
申请号：JP10994183
申请日：1983-06-17
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： NANBA HIROKUNI
IPC分类号： C30B25/00 , C30B25/02 , C30B25/04 , C30B25/18 , C30B29/48 , H01L21/205
摘要： PURPOSE:To produce a compound bulk crystal having convex or concave face and having uniform thickness distribution, with little material loss, in a short time, by carrying out the chemical vapor-phase deposition rotating a part of the substrate for deposition. CONSTITUTION:A substrate for deposition composed of the stationary flat substrate 15 and a rotatable hemispherical substrate 14 is placed in the vapor-phase reaction chamber of a chemical vapor-phase deposition apparatus, and the hemispherical substrate 14 is supported with the bearing 19, and rotated with the rotating mechanism 17 and the driving shaft 18. The raw material gases 6, 7 are introduced into the chamber through the inlet nozzles 4, 5 while keeping the reaction region to a proper reaction condition. The reaction product of the raw material gases 6, 7 is deposited on the substrates 14, 15, and particularly a compound bulk crystal 16 having uniform thickness distribution can be deposited on the hemispherical substrate 14 in a short time without material loss.

64. 发明专利

JPS5910573B2 JPS5910573B2 - 失效
公开(公告)号：JPS5910573B2
公开(公告)日：1984-03-09
申请号：JP166877
申请日：1977-01-10
申请人： Matsushita Electric Ind Co Ltd
发明人： TANAKA TSUNEO , NAGATA SEIICHI , FUKAI SHOICHI
IPC分类号： C30B25/04 , C30B29/40 , H01L21/203 , H01L21/208 , H01L21/26 , H01L21/302 , H01L21/306 , H01L21/308

65. 发明专利

JPS57500670A JPS57500670A - 失效
公开(公告)号：JPS57500670A
公开(公告)日：1982-04-15
申请号：JP50140281
申请日：1981-04-06
IPC分类号： C30B19/00 , C30B25/02 , C30B25/04 , C30B33/00 , H01L21/20 , H01L21/263 , H01L21/84 , H01L25/04 , H01L31/04 , H01L31/042 , H01L31/0687 , H01L31/18 , H01S5/02
CPC分类号： H01L31/0687 , C30B25/04 , C30B29/60 , C30B33/00 , H01L21/02002 , H01L21/02381 , H01L21/02461 , H01L21/02463 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L21/2007 , H01L31/043 , H01L31/18 , H01L31/1804 , H01L31/184 , H01L2221/68318 , H01L2924/0002 , H01S5/0207 , H01S5/0217 , Y02E10/544 , Y02E10/547 , Y02P70/521 , Y10S117/902 , Y10S117/904 , Y10S117/905 , Y10S117/915 , Y10S148/026 , Y10S148/048 , Y10S148/054 , Y10S148/09 , Y10S148/135 , Y10S438/977 , H01L2924/00
摘要： A method of producing sheets of crystalline material, wherein a growth mask is formed upon a crystallization substrate so as to leave areas of the substrate exposed and crystalline material is grown at areas of the substrate exposed through the mask and laterally over the surface of the mask to form a sheet of crystalline material. This sheet is separated so that the substrate can be reused, if desired. To separate the sheet from the crystallization substrate, a new substrate is applied to the sheet of crystalline material and then the new sheet and substrate are together separated from the crystallization substrate.

66. 实用新型

JPS5529594U 失效
公开(公告)号：JPS5529594U
公开(公告)日：1980-02-26
申请号：JP11382578
申请日：1978-08-18
IPC分类号： C30B25/04 , C23C14/04 , H01L21/203 , H01L21/205 , H01L21/285 , H01L21/363

67. 发明专利

JPS51107768A 失效
公开(公告)号：JPS51107768A
公开(公告)日：1976-09-24
申请号：JP1645576
申请日：1976-02-17
申请人： SIEMENS AG
发明人： MANFUREETO ZURUMINSUKII , ROORANTO GESUNAA
IPC分类号： C30B25/04 , C23C16/24 , C30B29/06 , H01L21/20 , H01L21/205 , H01L21/306 , H01L21/308

68. 发明专利

JPS50159970A 失效
公开(公告)号：JPS50159970A
公开(公告)日：1975-12-24
申请号：JP6789374
申请日：1974-06-13
IPC分类号： C30B19/00 , C30B19/12 , C30B25/04 , C30B29/40 , H01L21/208 , H01S5/00

69. 发明专利

JPS5068473A 失效
公开(公告)号：JPS5068473A
公开(公告)日：1975-06-07
申请号：JP11751373
申请日：1973-10-19
IPC分类号： C30B25/02 , C23C16/30 , C30B25/04 , C30B25/14 , C30B29/40 , H01L21/205

70. 发明专利

JP6966343B2 結晶成長方法および半導体素子の製造方法有权
公开(公告)号：JP6966343B2
公开(公告)日：2021-11-17
申请号：JP2018015982
申请日：2018-01-31
申请人：京セラ株式会社
发明人：西村剛太 , 堂本千秋
IPC分类号： C30B29/38 , C30B33/08 , C23C16/04 , H01L21/205 , C30B25/04

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