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61. 发明专利

JP2003068592A Method for producing epitaxial substrate, method for fabricating semiconductor element, and epitaxial substrate 有权
标题翻译：用于生产外源基材的方法，制备半导体元件的方法和外延基材
公开(公告)号：JP2003068592A
公开(公告)日：2003-03-07
申请号：JP2001251585
申请日：2001-08-22
申请人： Toshiba Corp , 株式会社東芝
发明人： SAKAI TADASHI , ONO TOMIO , SAKUMA HISASHI , SUZUKI MARIKO
IPC分类号： H01L21/205 , H01L21/02 , H01L21/265
摘要： PROBLEM TO BE SOLVED: To provide a high quality semiconductor epitaxial substrate while up scaling a semiconductor material producing only a small size crystal to practical size.
SOLUTION: The method for producing an epitaxial substrate comprises a step for preparing a supporting substrate 300, a step for preparing a plurality of planar crystal substrates 201-204, a step for implanting ions from one major surface of the crystal substrates 201-204 to form ion implantation layers 201c-204c, a step for pasting the plurality of crystal substrates 201-204 and the supporting substrate 300 one another, a step for separating the plurality of crystal substrates 201-204 into a plurality of thin film tiles 201a-204a bonded to the first major surface and a plurality of parent material side crystal substrates 201b-204b by heat treatment, and a step for growing a single crystal layer 301 epitaxially on the sauce of the thin film tiles 201a-204a.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：为了提供高质量的半导体外延基板，同时将仅生产小尺寸晶体的半导体材料缩放至实际尺寸。解决方案：用于制造外延衬底的方法包括制备支撑衬底300的步骤，制备多个平面晶体衬底201-204的步骤，将离子从晶体衬底201-204的一个主表面注入到形成离子注入层201c-204c，将多个晶体基板201〜204以及支撑基板300粘贴的工序，将多个晶体基板201〜204分离成多个薄膜瓦201a〜204a 通过热处理结合到第一主表面和多个母材侧晶体基板201b-204b，以及在薄膜瓦片201a-204a的酱汁上外延生长单晶层301的步骤。

62. 发明专利

JP2014183212A Graphene wiring and method of manufacturing the same 有权
标题翻译：石墨线及其制造方法
公开(公告)号：JP2014183212A
公开(公告)日：2014-09-29
申请号：JP2013057006
申请日：2013-03-19
申请人： Toshiba Corp , 株式会社東芝
发明人： MIYAZAKI HISAO , SAKAI TADASHI , KATAGIRI MASAYUKI , YAMAZAKI YUICHI , SUZUKI MARIKO
IPC分类号： H01L21/3205 , H01B5/14 , H01B13/00 , H01L21/28 , H01L21/285 , H01L21/768 , H01L23/532
CPC分类号： H01L23/53276 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To suppress CNT growth from the uppermost surface.SOLUTION: Graphene wiring according to an embodiment comprises: a substrate; a catalyst layer on the substrate; a first graphene sheet layer on the catalyst layer; and a second graphene sheet layer on the first graphene layer. The second graphene layer is formed of a multi-layer graphene sheet, and atoms or molecules exist between layers of the multi-layer graphene sheet.
摘要翻译：要解决的问题：从最上表面抑制CNT生长。解决方案：根据一个实施方案的石墨烯布线包括：基材; 基底上的催化剂层; 催化剂层上的第一石墨烯片层; 以及在第一石墨烯层上的第二石墨烯片层。第二石墨烯层由多层石墨烯片形成，原子或分子存在于多层石墨烯片的层之间。

63. 发明专利

JP2014183210A Graphene wiring 有权
标题翻译：石墨线
公开(公告)号：JP2014183210A
公开(公告)日：2014-09-29
申请号：JP2013057004
申请日：2013-03-19
申请人： Toshiba Corp , 株式会社東芝
发明人： MIYAZAKI HISAO , SAKAI TADASHI , KATAGIRI MASAYUKI , YAMAZAKI YUICHI , SAKUMA HISASHI , SUZUKI MARIKO
IPC分类号： H01L21/3205 , C01B31/02 , C23C16/26 , H01B5/14 , H01L21/28 , H01L21/768 , H01L23/532
CPC分类号： H01L23/53276 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide low-resistance graphene wiring which can be used as wiring of a semiconductor element and prevents the graphene wiring from becoming a semiconductor and dispersing.SOLUTION: Graphene wiring 10 connected to a contact plug 2 formed in a conductive film 1 and a contact layer insulating film 3 is formed. The graphene wiring is formed of a catalyst foundation layer 11, a catalyst layer 12, and a graphene layer 13. The graphene layer is formed of a multi-layer graphene sheet formed of a single layer or 100 or less layers. The graphene layer comprises a dopant layer 14 on a side surface, and atoms or molecules exist between layers or on the layers of the graphene layer.
摘要翻译：要解决的问题：提供可用作半导体元件的布线并且防止石墨烯布线变成半导体和分散的低电阻石墨烯布线。解决方案：连接到形成在导电膜中的接触插塞2的石墨烯布线10 形成接触层绝缘膜3。石墨烯布线由催化剂基础层11，催化剂层12和石墨烯层13形成。石墨烯层由单层或多层或多层形成的多层石墨烯片形成。石墨烯层包括在侧表面上的掺杂剂层14，并且在层之间或石墨烯层的层之间存在原子或分子。

64. 发明专利

JP2014086622A Semiconductor device and manufacturing method of the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2014086622A
公开(公告)日：2014-05-12
申请号：JP2012235546
申请日：2012-10-25
申请人： Toshiba Corp , 株式会社東芝
发明人： KATAGIRI MASAYUKI , YAMAZAKI YUICHI , SAKAI TADASHI , SAKUMA HISASHI , SUZUKI MARIKO
IPC分类号： H01L21/3205 , H01L21/768 , H01L23/522 , H01L23/532
CPC分类号： H01L21/76877 , C01B31/0206 , C01B32/15 , H01L21/2855 , H01L21/28556 , H01L21/76838 , H01L21/76843 , H01L21/76846 , H01L21/76876 , H01L21/76879 , H01L23/5226 , H01L23/53276 , H01L29/0669 , H01L29/413 , H01L51/0048 , H01L51/444 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide interlayer wiring excellent in structural stability.SOLUTION: A semiconductor device according to an embodiment comprises: a substrate on which a semiconductor circuit is formed; an interlayer insulation film in which a contact hole is formed on the substrate; a catalyst metal film on a side wall of the contact hole; catalyst metal particles at a bottom of the contact hole; a graphene on the catalyst metal film; and carbon nano-tubes on the catalyst metal particles, which pierce the contact hole.
摘要翻译：要解决的问题：提供结构稳定性优异的层间配线。解决方案：根据实施方案的半导体器件包括：形成有半导体电路的衬底; 在基板上形成有接触孔的层间绝缘膜; 在接触孔的侧壁上的催化剂金属膜; 催化剂金属颗粒在接触孔的底部; 催化剂金属膜上的石墨烯; 和催化剂金属颗粒上的碳纳米管，其刺穿接触孔。

65. 发明专利

JP2012064784A Semiconductor device and method of manufacturing semiconductor device 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：JP2012064784A
公开(公告)日：2012-03-29
申请号：JP2010208131
申请日：2010-09-16
申请人： Toshiba Corp , 株式会社東芝
发明人： YAMAZAKI YUICHI , WADA MAKOTO , SAKAI TADASHI
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/768
CPC分类号： H01L29/1606 , B82Y10/00 , H01L21/02491 , H01L21/02527 , H01L29/45 , H01L29/66015 , H01L29/76
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device to enable a graphene wiring structure by which a low-conductivity area is reduced as far as possible.SOLUTION: A semiconductor device comprises: a catalyst metal film 220; a graphene film 230; a contact plug 240; and an adjustment film 250. The catalyst metal film 220 is formed on a substrate. The graphene film 230 is formed on the catalyst metal film 220. The contact plug 240 is connected to the graphene film 230. The adjustment film 250 is formed on an area excluding the area connected to the contact plug 240 on the surface of the graphene film 230, while a Dirac point position is adjusted in the same direction as the area connected to the contact plug 240 with reference to the Fermi level.
摘要翻译：要解决的问题：提供一种半导体器件，以尽可能地降低导电性区域的石墨烯布线结构。解决方案：半导体器件包括：催化剂金属膜220; 石墨烯薄膜230; 触点插头240; 和调整膜250.催化剂金属膜220形成在基板上。石墨烯膜230形成在催化剂金属膜220上。接触插塞240连接到石墨烯膜230.调节膜250形成在除了在石墨烯膜的表面上连接到接触插塞240的区域的区域上 230，而相对于参照费米能级，与连接到接触插头240的区域相同的方向调节狄拉克点位置。版权所有（C）2012，JPO＆INPIT

66. 发明专利

JP2012049261A Method of manufacturing carbon nanotube wiring 有权
标题翻译：制备碳纳米管接线的方法
公开(公告)号：JP2012049261A
公开(公告)日：2012-03-08
申请号：JP2010188662
申请日：2010-08-25
申请人： Toshiba Corp , 株式会社東芝
发明人： WADA MAKOTO , YAMAZAKI YUICHI , KATAGIRI MASAYUKI , KITAMURA MASAYUKI , SAKATA ATSUKO , KAJITA AKIHIRO , SAKAI TADASHI , SAKUMA HISASHI
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/768
CPC分类号： H01L23/53276 , B82Y10/00 , B82Y40/00 , H01L21/76831 , H01L21/76844 , H01L21/76846 , H01L21/76855 , H01L21/76858 , H01L21/76865 , H01L21/76876 , H01L21/76877 , H01L21/76879 , H01L23/5226 , H01L23/53223 , H01L23/53238 , H01L23/53266 , H01L23/53295 , H01L2221/1089 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To improve electronic properties in a wiring structure.SOLUTION: The method of manufacturing a carbon nanotube wiring includes steps of: forming an insulating film 18 on a first conductive layer 200; forming a hole 40, which penetrates the insulating film, in the insulating film; forming a catalyst base film 19 on the first conductive layer on the bottom in the hole and on the insulating film of the side face in the hole; forming a catalyst inactive film 20 on the catalyst base film of the side face in the hole; forming a catalyst film 21 on the catalyst base film on the bottom in the hole and on the catalyst inactive film of the side face in the hole; and growing a plurality of carbon nanotubes 22 from the upper part of the catalyst film on the bottom in the hole.
摘要翻译：要解决的问题：提高布线结构中的电子性能。解决方案：制造碳纳米管布线的方法包括以下步骤：在第一导电层200上形成绝缘膜18; 在绝缘膜上形成穿透绝缘膜的孔40; 在孔的底部的第一导电层和孔的侧面的绝缘膜上形成催化剂基膜19; 在孔的侧面的催化剂基底膜上形成催化剂无活性膜20; 在孔的底部的催化剂基底膜上和孔的侧面的催化剂无活性膜上形成催化剂膜21; 并从孔的底部的催化剂膜的上部生长多个碳纳米管22。版权所有（C）2012，JPO＆INPIT

67. 发明专利

JP2011207733A Carbon nanotube assembly, solar cell, waveguide and substrate with the same carbon nanotube assembly 有权
标题翻译：碳纳米管组件，太阳能电池，具有相同碳纳米管组件的波导管和基板
公开(公告)号：JP2011207733A
公开(公告)日：2011-10-20
申请号：JP2010079817
申请日：2010-03-30
申请人： Toshiba Corp , 株式会社東芝
发明人： YAMAZAKI YUICHI , SAKAI TADASHI , ASAKAWA KOUJI
IPC分类号： C01B31/02 , B82B1/00 , G02B6/42 , H01L31/04
CPC分类号： B82Y20/00 , G02B6/1226 , G02B6/43 , G02B2006/1213 , Y10T428/24612 , Y10T428/25 , Y10T428/268
摘要： PROBLEM TO BE SOLVED: To provide a device with high operation efficiency using the light absorption as a main principle of operation.SOLUTION: According to one embodiment, a carbon nanotube assembly includes a plurality of carbon nanotubes having a length of 10 μm or less in a major axis direction assembled with a space filling rate of 30% or more.
摘要翻译：要解决的问题：提供使用光吸收作为主要操作原理的具有高操作效率的装置。解决方案：根据一个实施方案，碳纳米管组件包括多个长度为10μm以下的碳纳米管以30％以上的空间填充率组装的长轴方向。

68. 发明专利

JP2011061026A Carbon nanotube wiring and method for manufacturing the same 审中-公开
标题翻译：碳纳米管接线及其制造方法
公开(公告)号：JP2011061026A
公开(公告)日：2011-03-24
申请号：JP2009209527
申请日：2009-09-10
申请人： Toshiba Corp , 株式会社東芝
发明人： MATSUNAGA NORIAKI , WADA MAKOTO , AKIMOTO YOSUKE , SAKAI TADASHI , SAKUMA HISASHI , KATAGIRI MASAYUKI , YAMAZAKI YUICHI
IPC分类号： H01L21/768 , H01L21/3205 , H01L23/52 , H01L23/522
CPC分类号： H01L23/5226 , H01L21/76814 , H01L21/76831 , H01L21/76834 , H01L21/7684 , H01L21/76849 , H01L21/76879 , H01L21/76883 , H01L23/53276 , H01L2221/1094 , H01L2224/13
摘要： PROBLEM TO BE SOLVED: To provide a carbon nanotube wiring for obtaining good electrical connection in a plug wiring having a carbon nanotube, and provide a method for manufacturing the same. SOLUTION: On a first wiring layer 12, an interlayer insulating film 13 is formed. On the interlayer insulating film 13, a second wiring layer 14 is formed. A contact hole 15 is formed in the interlayer insulating film 13 between the first wiring layer 12 and the second wiring layer 14. In the contact hole 15, there are formed a plurality of carbon nanotubes 16 with one end connected with the first wiring layer 12 and the other end connected with the second wiring layer 14. Moreover, a stopper film 17 is formed between the interlayer insulating film 13 and the second wiring layer 14. A part of the stopper film 17 is filled between the other ends of a plurality of the carbon nanotubes 16. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于在具有碳纳米管的插头布线中获得良好的电连接的碳纳米管布线，并提供其制造方法。解决方案：在第一布线层12上形成层间绝缘膜13。在层间绝缘膜13上形成第二布线层14。在第一布线层12和第二布线层14之间的层间绝缘膜13中形成有接触孔15.在接触孔15中形成多个碳纳米管16，其一端与第一布线层12连接并且另一端与第二布线层14连接。此外，在层间绝缘膜13和第二布线层14之间形成阻挡膜17.阻挡膜17的一部分填充在多个碳纳米管16.版权所有（C）2011，JPO＆INPIT

69. 发明专利

JP2010006678A Carbon nanotube production apparatus, carbon nanotube production method, and radical production apparatus 有权
标题翻译：碳纳米管生产设备，碳纳米管生产方法和放射生产设备
公开(公告)号：JP2010006678A
公开(公告)日：2010-01-14
申请号：JP2008171578
申请日：2008-06-30
申请人： Toshiba Corp , 株式会社東芝
发明人： YAMAZAKI YUICHI , SAKAI TADASHI , SAKUMA HISASHI , KATAGIRI MASAYUKI , SUZUKI MARIKO
IPC分类号： C01B31/02
CPC分类号： B82Y40/00 , B82Y30/00 , C01B32/16
摘要： PROBLEM TO BE SOLVED: To provide a carbon nanotube production apparatus producing high quality carbon nanotubes in a wide temperature range, in particular at a low temperature, a carbon nanotube production method, and a radical production apparatus producing radicals.
SOLUTION: The carbon nanotube production apparatus is provided with: a plasma generation section 2 for generating a plasma comprising ions, radicals and electrons from a gas; a growth substrate holding section 5 for producing carbon nanotubes from the radicals; a multistage charged-particle shielding electrode section 3 which is arranged between the plasma generation section 2 and the growth substrate holding section 5 and prevents the entry of ions and electrons into the growth substrate holding section 5; and an electric power source 4 for bias application, applying a voltage to the multistage charged-particle shielding electrode section 3. The multistage charged-particle shielding electrode section 3 is provided with a first shielding electrode part 11 having opening parts 14, a second shielding electrode part 12 having opening parts 15, and a third shielding electrode part 13 having opening parts 16.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种在宽温度范围内，特别是低温下生产高质量碳纳米管的碳纳米管制造装置，碳纳米管制造方法和产生自由基的自由基生成装置。解决方案：碳纳米管制造装置设置有：等离子体产生部分2，用于从气体产生包括离子，自由基和电子的等离子体; 用于从基团制造碳纳米管的生长衬底保持部分5; 布置在等离子体产生部分2和生长衬底保持部分5之间并防止离子和电子进入生长衬底保持部分5的多级带电粒子屏蔽电极部分3; 以及用于偏置施加的电源4，向多级带电粒子屏蔽电极部3施加电压。多级带电粒子屏蔽电极部3设置有具有开口部14的第一屏蔽电极部11，第二屏蔽具有开口部分15的电极部分12和具有开口部分16的第三屏蔽电极部分13.权利要求：（C）2010，JPO＆INPIT

70. 发明专利

JP2009152096A Discharge lamp 审中-公开
标题翻译：放电灯
公开(公告)号：JP2009152096A
公开(公告)日：2009-07-09
申请号：JP2007329764
申请日：2007-12-21
申请人： Toshiba Corp , 株式会社東芝
发明人： YAMAZAKI YUICHI , SAKAI TADASHI , SAKUMA HISASHI , SUZUKI MARIKO , KATAGIRI MASAYUKI
IPC分类号： H01J61/06 , H01J1/30 , H01J61/12 , H01J61/28
摘要： PROBLEM TO BE SOLVED: To provide a discharge lamp which can conduct a stable electric discharge for a long period. SOLUTION: The discharge lamp includes: an outer circumferential envelope 2 in which a discharging gas 12 containing hydrogen is enclosed; and a pair of anodes 5a, 5b which are provided in the outer circumferential envelope and have a cathode supporting body 6, an electron emitting film 7 of diamond provided on a surface of the cathode supporting body, and a hydrogen containing film 8 which contacts with the cathode supporting body and is arranged close to the electron emitting film. COPYRIGHT: (C)2009,JPO&INPIT

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