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1. 发明专利

JP2015060908A 半導体装置、超伝導装置およびその製造方法有权
标题翻译：半导体器件，超导器件及其制造方法
公开(公告)号：JP2015060908A
公开(公告)日：2015-03-30
申请号：JP2013192900
申请日：2013-09-18
申请人：株式会社東芝 , Toshiba Corp
发明人： MIYAZAKI HISAO , YAMAZAKI YUICHI , SAKAI TADASHI
IPC分类号： H01L29/06 , H01L29/167 , H01L29/786 , H01L29/861 , H01L29/868 , H01L39/12 , H01L39/22
CPC分类号： H01L39/2493 , H01L21/02381 , H01L21/02439 , H01L21/02444 , H01L21/02458 , H01L21/02499 , H01L21/02507 , H01L21/02521 , H01L21/02664 , H01L29/1606 , H01L29/6603 , H01L29/66045 , H01L29/7781 , H01L29/84 , H01L29/8611 , H01L29/868 , H01L39/223
摘要：【課題】層状物質に空間選択的に層間物質が存在する半導体装置、超伝導装置とその製造方法を提供する。【解決手段】半導体装置100は、2次元状の物質を2層以上積層させた層状物質2を有し、層状物質は、第1層間物質11を層状物質の層間に有するp型領域を有し、p型領域の端部と隣接する導電性領域Bを有し、導電性領域上に、封止部材3を有し、導電性領域の層状物質と導電性領域上の封止部材の距離は、第1層間物質の直径よりも小さい。【選択図】図1
摘要翻译：要解决的问题：提供其中层间材料以空间选择性方式存在于层状材料中的半导体器件; 并提供超导装置和超导装置的制造方法。解决方案：半导体装置100包括其中层压多于一层二维材料的层状材料2。层状材料包括：在层状材料的层之间具有第一夹层材料11的p型区域; 与p型区域的边缘相邻的导电区域B; 以及导电区域上的密封构件3，其中导电区域上的层状材料与导电区域上的封装构件之间的距离小于第一夹层材料的直径。

2. 发明专利

JP2013067541A Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2013067541A
公开(公告)日：2013-04-18
申请号：JP2011208851
申请日：2011-09-26
申请人： Toshiba Corp , 株式会社東芝
发明人： SUZUKI MARIKO , SAKAI TADASHI , SAKUMA HISASHI , KATAGIRI MASAYUKI , YAMAZAKI YUICHI
IPC分类号： C30B29/04 , C23C16/27 , H01L21/205
CPC分类号： H01L21/02527 , H01L21/02376 , H01L21/02433 , H01L21/02576 , H01L29/66136 , H01L29/66143 , H01L29/8613 , H01L29/872
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device excellent in the uniformity of impurity concentration and crystallinity which has an n-type diamond semiconductor layer, and to provide a method for manufacturing the same.SOLUTION: The semiconductor device includes: a diamond substrate having a surface inclined from a (100) plane in a range of 10 to 40° in a direction of ±10°; the n-type diamond semiconductor layer containing phosphorus (P) and formed on the surface plane described above. Further, the method for manufacturing the semiconductor device includes the following steps: preparing the diamond substrate having a surface inclined from the (100) surface in a range of 10 to 40° in the direction of ±10°; forming the n-type diamond semiconductor layer containing phosphorus (P) on the surface plane described above by epitaxial growth.
摘要翻译：要解决的问题：提供具有n型金刚石半导体层的杂质浓度和结晶度均匀性优异的半导体器件，并提供其制造方法。解决方案：半导体器件包括：金刚石衬底，具有从（100）面倾斜10°至40°范围内的方向<011±10°的表面; 含有磷（P）并形成在上述表面上的n型金刚石半导体层。此外，制造半导体器件的方法包括以下步骤：制备具有从（100）表面倾斜的表面在<011>±10°的方向上在10至40°的范围内的金刚石基底; 通过外延生长在上述表面上形成含有磷（P）的n型金刚石半导体层。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2012204425A Semiconductor substrate, method of manufacturing the same, and electronic device 有权
标题翻译：半导体衬底，其制造方法和电子器件
公开(公告)号：JP2012204425A
公开(公告)日：2012-10-22
申请号：JP2011065266
申请日：2011-03-24
申请人： Toshiba Corp , 株式会社東芝
发明人： SAKUMA HISASHI , SAKAI TADASHI , YAMAZAKI YUICHI , KATAGIRI MASAYUKI , SUZUKI MARIKO , WADA MAKOTO
IPC分类号： H01L21/3205 , C01B31/02 , H01L21/768 , H01L23/532
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor substrate using carbon nanotubes and having excellent characteristics, a method of manufacturing the same, and an electronic device.SOLUTION: A semiconductor substrate comprises: a base that has a lower electrode in its first primary surface; an interlayer insulating film that is provided on a portion except for the lower electrode on the base; a catalyst layer that is provided on the lower electrode; a plurality of carbon nanotubes that are provided on the catalyst layer and extend in the direction perpendicular to a first primary surface of the lower electrode; an upper electrode that is provided on the carbon nanotubes and faces the lower electrode; a first buried film that covers the catalyst layer and ends of the carbon nanotubes at the catalyst layer side; and a second buried film that is filled between the other ends of the carbon nanotubes and has higher density than the first buried film.
摘要翻译：要解决的问题：提供一种使用碳纳米管并具有优异特性的半导体衬底，其制造方法和电子器件。解决方案：半导体衬底包括：在其第一主表面中具有下电极的基底; 设置在基底上的下部电极以外的部分的层间绝缘膜; 设置在下电极上的催化剂层; 多个碳纳米管，其设置在所述催化剂层上并且在垂直于所述下电极的第一主表面的方向上延伸; 设置在碳纳米管上且面向下电极的上电极; 在催化剂层侧覆盖催化剂层和碳纳米管末端的第一掩埋膜; 以及填充在碳纳米管的另一端之间并且具有比第一掩埋膜更高的密度的第二掩埋膜。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2010177405A Carbon nanotube and method of manufacturing the same 有权
标题翻译：碳纳米管及其制造方法
公开(公告)号：JP2010177405A
公开(公告)日：2010-08-12
申请号：JP2009017687
申请日：2009-01-29
申请人： Toshiba Corp , 株式会社東芝
发明人： KATAGIRI MASAYUKI , SAKAI TADASHI , SAKUMA HISASHI , YAMAZAKI YUICHI , SUZUKI MARIKO
IPC分类号： H01L21/768 , C01B31/02 , H01L21/28 , H01L21/285 , H01L23/522
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a carbon nanotube on a CoWP.
SOLUTION: The method of manufacturing a carbon nanotube wiring structure includes: a plasma treatment step of plasma-treating a plating layer containing Co on a Cu wiring; an auxiliary catalyst providing step of providing an auxiliary catalyst for growing carbon nanotube to the Co-contained plating layer before or after the plasma treatment step; a heat treatment step of heat-treating the Co-contained plating layer and the auxiliary catalyst provided to the Co-contained plating layer after the plasma treatment step and the auxiliary catalyst providing step; and a carbon nanotube growing step in a plasma CVD method after the heat treatment step.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：待解决的问题：提供在CoWP上制造碳纳米管的方法。解决方案：制造碳纳米管布线结构的方法包括：在Cu布线上等离子体处理含有Co的镀层的等离子体处理步骤; 辅助催化剂提供步骤，其在等离子体处理步骤之前或之后提供用于将碳纳米管生长至辅助镀层的辅助催化剂; 在等离子体处理步骤和辅助催化剂提供步骤之后，对附着的镀层和辅助催化剂进行热处理的热处理步骤; 以及在热处理步骤之后的等离子体CVD法中的碳纳米管生长步骤。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2010163331A Method of growing carbon nanotube, and carbon nanotube bundle-formed substrate 有权
标题翻译：生长碳纳米管的方法和碳纳米管组合形成的基体
公开(公告)号：JP2010163331A
公开(公告)日：2010-07-29
申请号：JP2009008437
申请日：2009-01-19
申请人： Fujitsu Semiconductor Ltd , Toshiba Corp , 富士通セミコンダクター株式会社 , 株式会社東芝
发明人： YAMAZAKI YUICHI , SAKAI TADASHI , SAKUMA HISASHI , KATAGIRI MASAYUKI , SUZUKI MARIKO , SATO SHINTARO
IPC分类号： C01B31/02
CPC分类号： H01J37/32422 , B82Y30/00 , B82Y40/00 , C01B32/16 , C23C16/02 , C23C16/26 , H01J37/32357
摘要： PROBLEM TO BE SOLVED: To provide a method of growing a high-density carbon nanotube by preventing agglomeration of the catalyst fine particles.
SOLUTION: The method of growing the high-density carbon nanotube comprises: a first plasma treatment process of treating the surface of a substrate provided with the catalyst fine particles by the plasma species generated from a gas containing at least hydrogen or a rare gas excluding carbon; a second plasma treatment process of forming a carbon layer on the surface of the catalyst fine particles by the plasma generated from a gas containing at least hydrocarbons after the first process; and a carbon nanotube growth process of growing the carbon nanotube by the plasma generated from the gas containing at least hydrocarbons after the second process.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种通过防止催化剂细颗粒的聚集来生长高密度碳纳米管的方法。解决方案：生长高密度碳纳米管的方法包括：第一等离子体处理方法，其通过由至少含有氢气或稀有气体的气体产生的等离子体物质来处理设置有催化剂细颗粒的基板的表面煤气不含碳; 第二等离子体处理工艺，其通过在第一工艺之后由至少含有烃的气体产生的等离子体在催化剂细颗粒的表面上形成碳层; 以及通过在第二工序后至少含有烃的气体产生的等离子体生长碳纳米管的碳纳米管生长方法。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2008258433A Wiring, electronic apparatus and manufacturing method of electronic apparatus 有权
标题翻译：电子设备的接线，电子设备和制造方法
公开(公告)号：JP2008258433A
公开(公告)日：2008-10-23
申请号：JP2007099542
申请日：2007-04-05
申请人： Toshiba Corp , 株式会社東芝
发明人： SAKAI TADASHI , SAKUMA HISASHI , KATAGIRI MASAYUKI , ONO TOMIO , SUZUKI MARIKO
IPC分类号： H01L21/768 , H01L23/522
CPC分类号： H05K3/4038 , B82Y10/00 , H01L21/288 , H01L21/76879 , H01L23/53276 , H01L2221/1094 , H01L2924/0002 , H05K2201/026 , H05K2201/0323 , Y10S977/742 , Y10T29/49155 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide highly reliable wiring capable of suppressing performance degradation. SOLUTION: The wiring is provided with a plurality of conductive members 20 comprising a bundled carbon nanotube whose one end is connected to a first conductive film and other end is connected to a second conductive film separated from the first conductive film, and carbon particles 22 having a diamond crystal structure dispersed between the conductive members 20. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供能够抑制性能劣化的高度可靠的布线。解决方案：布线设置有多个导电构件20，导电构件20包括一端连接到第一导电膜并且另一端连接到与第一导电膜分离的第二导电膜的带状碳纳米管，以及碳颗粒22具有分散在导电构件20之间的金刚石晶体结构。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2008243676A Diamond electron emission element 审中-公开
标题翻译：钻石电子发射元件
公开(公告)号：JP2008243676A
公开(公告)日：2008-10-09
申请号：JP2007084287
申请日：2007-03-28
申请人： Toshiba Corp , 株式会社東芝
发明人： ONO TOMIO , SAKAI TADASHI , SAKUMA HISASHI , YOSHIDA HIROAKI , SUZUKI MARIKO
IPC分类号： H01J1/308
摘要： PROBLEM TO BE SOLVED: To provide a diamond electron emission element in which electrons can be emitted at high efficiency. SOLUTION: This is equipped with a diamond substrate (1), a high concentration p-type diamond layer (2) which is formed on the diamond substrate and contains p-type impurities at a first concentration, a low concentration p-type diamond layer (3) which is formed on the high concentration p-type diamond layer and contains p-type impurities at a second concentration that is lower than the first concentration, an n-type semiconductor region (5) formed at a part of the low concentration p-type diamond layer, an insulation layer (7) that is formed ranging over the low concentration p-type diamond layer and the n-type semiconductor region and has an aperture in which the low concentration p-type diamond layer and the n-type conductor region are partially exposed, a gate electrode (8) formed on the insulation layer, an electron emission suppressing region (6) that is extended to the aperture and arranged under the insulation membrane, and a hydrogen terminal end face (9) to cover the surface of the aperture. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供能够以高效率发射电子的金刚石电子发射元件。
解决方案：它配备有金刚石基底（1），高浓度p型金刚石层（2），其形成在金刚石基底上并含有第一浓度的p型杂质，低浓度p- 形成在高浓度p型金刚石层上并且含有低于第一浓度的第二浓度的p型杂质的n型金刚石层（3），形成在第一浓度部分的n型半导体区域低浓度p型金刚石层，形成在低浓度p型金刚石层和n型半导体区域之上的绝缘层（7），并且具有孔，其中低浓度p型金刚石层和 n型导体区域部分地露出，形成在绝缘层上的栅电极（8），延伸到孔口并布置在绝缘膜下方的电子发射抑制区域（6）和氢终端端面 9）覆盖表面 e的孔径。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2008078081A Field emission electron source and its manufacturing method 审中-公开
标题翻译：现场发射电子源及其制造方法
公开(公告)号：JP2008078081A
公开(公告)日：2008-04-03
申请号：JP2006258925
申请日：2006-09-25
申请人： Toshiba Corp , 株式会社東芝
发明人： SAKAI TADASHI , ONO TOMIO , SAKUMA HISASHI , YOSHIDA HIROAKI , SUZUKI MARIKO
IPC分类号： H01J1/304 , H01J9/02
CPC分类号： H01J1/304 , H01J9/025
摘要： PROBLEM TO BE SOLVED: To provide a field emission electron source and its manufacturing method capable of achieving electron emission of a high output in plane, and achieving electron emission excellent in durability and stable for a long period of time. SOLUTION: The field emission electron source 1 includes a substrate 2. The substrate 2 has a wiring layer 3 formed, on which 3, an insulating layer 4 is formed. The insulating layer 4 has a plurality of through-holes 5 provided, inside each of which 5, a conductive via plug 6 is arranged. A diamond layer 7 is formed so as to cover top parts of the insulating layer 4 and the conductive via plugs 6. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够实现平面上高输出的电子发射的场发射电子源及其制造方法，并且实现耐久性优异并且长时间稳定的电子发射。解决方案：场发射电子源1包括衬底2.衬底2具有形成的布线层3，其上形成有绝缘层4。绝缘层4具有设置有多个通孔5，每个通孔5布置有导电通孔塞6。金刚石层7形成为覆盖绝缘层4和导电通孔塞6的顶部。（C）2008年，JPO和INPIT

9. 发明专利

JP2007246314A Method and tool for forming diamond film 有权
标题翻译：形成金刚石膜的方法和工具
公开(公告)号：JP2007246314A
公开(公告)日：2007-09-27
申请号：JP2006069496
申请日：2006-03-14
申请人： Toshiba Corp , 株式会社東芝
发明人： YOSHIDA HIROAKI , YANASE ISAMU , ONO TOMIO , SAKUMA HISASHI , SUZUKI MARIKO , SAKAI TADASHI
IPC分类号： C30B29/04 , C23C16/02 , C23C16/27 , H01J61/06 , H01J61/067
CPC分类号： C30B29/04 , C30B25/105 , H01L21/02381 , H01L21/02425 , H01L21/02444 , H01L21/02527 , H01L21/0262 , H01L21/02645
摘要： PROBLEM TO BE SOLVED: To uniformly form a diamond film on an inner face of a metal substrate having an opening.
SOLUTION: The method includes: a diamond nuclei forming step of forming diamond nuclei on the surface of a metal substrate 1a of a mixture of the metal substrate 1a and a semiconductor material 12, 13 at a temperature lower than 650°C in a first gaseous mixture containing at least carbon and hydrogen; and a diamond film forming step of growing the diamond nuclei to form a diamond film on the mixture having the diamond nuclei at a temperature lower than 750°C in a second gaseous mixture containing at least carbon and hydrogen.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：在具有开口的金属基板的内表面上均匀地形成金刚石膜。解决方案：该方法包括：在低于650℃的温度下在金属基板1a和半导体材料12,13的混合物的金属基板1a的表面上形成金刚石核的金刚石核形成步骤，至少含有碳和氢的第一气体混合物; 以及金刚石膜形成步骤，在含有至少碳和氢的第二气体混合物中，在具有金刚石核的混合物中在低于750℃的温度下生长金刚石核以形成金刚石膜。版权所有（C）2007，JPO＆INPIT

10. 发明专利

JP2007128783A Discharge light emitting device 有权
标题翻译：放电灯发光装置
公开(公告)号：JP2007128783A
公开(公告)日：2007-05-24
申请号：JP2005321388
申请日：2005-11-04
申请人： Toshiba Corp , 株式会社東芝
发明人： ONO TOMIO , SAKAI TADASHI , SAKUMA HISASHI , YOSHIDA HIROAKI , SUZUKI MARIKO
IPC分类号： H01J63/08 , H01J1/304
CPC分类号： H01J61/0737 , H01J61/0675 , H01J2201/308
摘要： PROBLEM TO BE SOLVED: To provide a discharge light emitting device in which an electron is discharged from a p-type semiconductor, and which has a high discharge efficiency of the electron, and a long lifetime. SOLUTION: Provided are: an enclosure 101; gas 107 for discharge sealed in the enclosure 101; an anode 103 and a cathode 102 installed in the enclosure 101; electrode members 114 respectively connected to the anode 103 and the cathode 102; molybdenum foils 104 connected to the electrode members 114; and extraction leads 105 connected to the molybdenum foils 104. COPYRIGHT: (C)2007,JPO&INPIT

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