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61. 发明专利

JPH03208344A MANUFACTURING DEVICE FOR SEMICONDUCTOR 失效
公开(公告)号：JPH03208344A
公开(公告)日：1991-09-11
申请号：JP270790
申请日：1990-01-10
申请人： FUJITSU LTD
发明人： KOBAYASHI MASANORI
IPC分类号： H01L21/304
摘要： PURPOSE:To prevent readherence of water droplets or dusts to a semiconductor substrate by providing a heat resistant vessel inclined in the bottom of a device for holding cleaned substrate in the vessel to dry it, heating means for holding the atmosphere in the vessel at a high temperature, and temperature control means for holding the temperature of the bottom of the vessel at a specific value. CONSTITUTION:A device for holding cleaned semiconductor substrate in a heat resistant vessel to dry it, has a heat resistant vessel 1 having an inclined bottom, heating means 2 for holding the atmosphere in the vessel 1 at a high temperature, and temperature control means 3 for holding the temperature of the bottom of the vessel 1 of 100 deg. or lower. Even if the washed substrate is introduced into the vessel 1 and water droplets dropped from the substrate are dropped in the bottom of the vessel 1, since the bottom of the vessel is held at 100 deg.C or lower, the droplets are not abruptly evaporated, and since the bottom of the vessel is inclined, the droplets are fed along the bottom and not jumped up. Thus, the readherence of the droplets or dusts to the substrate can be prevented.

62. 发明专利

JPH03106020A BOAT WITH HEAT-SCREENING PLATE 失效
公开(公告)号：JPH03106020A
公开(公告)日：1991-05-02
申请号：JP24455789
申请日：1989-09-20
申请人： FUJITSU LTD , FUJITSU VLSI LTD
发明人： KOBAYASHI MASANORI , OGAWA TSUTOMU , KANEDA HIROSHI , SHIRAKAWA YOSHIMI , YAMAZAKI TAKESHI , NAKAJIMA KAZUJI
IPC分类号： H01L21/22
摘要： PURPOSE:To improve the temperature distribution in the axial direction of a reaction tube by a method wherein a heat-proof heat screening plate is provided at least on one end of the boat in the axial direction of the reaction tube. CONSTITUTION:Three sheets of quartz heat-screening plates 11a, the outer circumference of which is horseshoe-shaped, are vertically provided on the surface at both end parts of a quartz bottom plate 11b leaving a prescribed space between them. A square notch 11a, which is formed by cutting off a part of the heat-screening plates 11a, is provided at both ends, which orthogonally intersect with the side edge of the heat-screening plates 11a which are welded to the bottom plate 11b. Accordingly, the heat radiation generating from the center part of a reaction tube, where a semiconductor wafer that is heated up to high temperature will be arranged, toward the direction of the aperture part of the reaction tube, is reduced by the heat-screening plates 11a of the heat-screening-plate-attached boat which is inserted into the reaction tube carrying semiconductor wafers. As a result, the temperature distribution in the tube axial direction of the reaction tube can be improved.

63. 发明专利

JPH02132828A WAFER CLEANING VESSEL 失效
公开(公告)号：JPH02132828A
公开(公告)日：1990-05-22
申请号：JP28633788
申请日：1988-11-11
申请人： FUJITSU LTD , FUJITSU VLSI LTD
发明人： UNO MASAAKI , KOBAYASHI MASANORI , NIWAYAMA NOBUO , OYAMA YASUSHI , NAKAJIMA KAZUJI
IPC分类号： H01L21/304
摘要： PURPOSE:To prevent the dust once removed from sticking again to the cleaned up wafers by a method wherein a cleaning solution is horizontally fed between the first and the second vertical current regulating plates with multiple running-in and -out ports to clean up the wafers inserted between the plates. CONSTITUTION:The title wafer cleaning vessel 3 is provided with the first vertical current regulating plate 4 with multiple cleaning solution running-in ports 41 as well as the second vertical current regulating plate 5 with multiple cleaning solution running-out ports 51 opposite to each other holding the space whereto wafers 2 are fixed. The cleaning solution fed from a feed opening 11 passing through the running-in ports 41 horizontally runs along the surfaces of wafers 2 horizontally or vertically fixed between the current regulating plates 4 and 5 to be drained out of the running out ports 51 together with the dust removed from the wafers 2. Through these procedures, the title wafer cleaning vessel capable of preventing the dust once removed from sticking again to the wafers 2 when the cleaned up wafers are picked up out of the vessel can be manufactured.

64. 发明专利

JPS6461037A METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6461037A
公开(公告)日：1989-03-08
申请号：JP21890387
申请日：1987-09-01
申请人： FUJITSU LTD
发明人： MORI HARUHISA , KOBAYASHI MASANORI , IGARASHI TAKASHI
IPC分类号： H01L21/60
摘要： PURPOSE:To regulate placing current density irrespective of the number of bump contact windows on a barrier metal and to maintain growing velocity of bumps of plating constant by providing means for controlling plating voltage of an object to be plated with two or more contacts. CONSTITUTION:A semiconductor substrate 41, contacts 47 (47a, 47b) of two or more insulated barrier metals 44 (44a, 44b), and an object 14 to be plated made of a plurality of bump contact windows 46 opened at a resist film 45. A plating current is fed through plating voltage control means 17 between the contacts 47 of two or more insulated barrier metals 44 and opposite plating electrodes 13, and plating is grown in the window 46 by the plating current. The plating current is interrupted through short-circuit detecting means 17 by the contact between the bumps 16 due to the growth of the plating.

65. 发明专利

JPS63228611A SEMICONDUCTOR JIG AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS63228611A
公开(公告)日：1988-09-22
申请号：JP6318187
申请日：1987-03-17
申请人： FUJITSU LTD , IBIDEN CO LTD
发明人： KOBAYASHI MASANORI , OGAWA TSUTOMU , WADA KUNIHIKO , FURUKAWA MASAKAZU , YOKOYAMA TAKAO
IPC分类号： C30B31/14 , C30B35/00 , H01L21/22
摘要： PURPOSE:To decrease the yield of dust due to friction and abrasion, by controlling the surface roughness of a silicon carbide material. CONSTITUTION:This semiconductor jig is a process pipe, a handle having a size and a configuration, which can be inserted into said process pipe, a jig for inputting and taking out said handle or a semiconductor mounting jig. The jig is constituted with a silicon carbide material having a part, whose surface roughness is Rmax

66. 发明专利

JPS60245163A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS60245163A
公开(公告)日：1985-12-04
申请号：JP10154884
申请日：1984-05-18
申请人： FUJITSU LTD
发明人： OGAWA TSUTOMU , WADA KUNIHIKO , MIYAMOTO SHIYUUICHI , HASEGAWA HITOSHI , NIWAYAMA NOBUO , KOBAYASHI MASANORI
IPC分类号： G11C11/401 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/10 , H01L27/108
摘要： PURPOSE:To enhance the density of a memory cell by commonly forming opposed electrodes of a capacitor and an element separating strip with a conductive region formed through a dielectric element in a groove formed with a matrix shape on a semiconductor substrate. CONSTITUTION:A P type Si layer 11 is epitaxially grown on a P type Si substrate 10, and a memory cell is formed in the layer 11. In this configuration, a capacitor insulating film 13 is interposed between a conductive region 12 and the layer 11 to enclose the layer 11, the region 12 is formed in a matrix shape, grounded at a reference popential to operate as the opposed electrodes of a capacitor, and also as an element separating strip. In other words, the films 13 disposed at both sides of the region 12 respectively operate as the capacitor insulating films of separate memory cells, and charge is stored in a charge storage regions 20a-20c. When an IC is formed of the structure of this memory cell, the area of the capacitor is increased to increase the capacity. Further, since the region 12 operates also as the element separating strip, the density can be enhanced.

67. 发明专利

JPS60224239A DEFECT DETECTING METHOD OF THIN FILM 失效
公开(公告)号：JPS60224239A
公开(公告)日：1985-11-08
申请号：JP7946684
申请日：1984-04-20
申请人： FUJITSU LTD
发明人： KOBAYASHI MASANORI , OGAWA TSUTOMU
IPC分类号： H01L21/316 , H01L21/66
摘要： PURPOSE:To readily detect a defect by visual observation using a microscope by forming an insulating film on a silicon substrate, then heat-treating in gas having oxygen partial pressure or steam pressure of the degree that an insulating film is not newly grown or in vacuum at the specific temperature to visualize the defect. CONSTITUTION:A heat treatment is performed at 600-1,250 deg.C in argon atmosphere in which H2O or O2 does not almost exist. At this time, since new SiO2 film is not almost grown in a boundary between a silicon substrate 11 and an SiO2 film 12, a reaction between Si+SiO2 2SiO occurs, but since no defect occurs on the SiO2 film, the thickness does not alter. However, if a local defect such as pinhole or metal ion exists on the film 12, the defect operates as a shortcircuit bus to the surface of the film from the boundary, and SiO having high vapor pressure is diffused in the atmosphere. Then, the equilibrium of reaction is displaced rightward, with the result that the silicon of the periphery of the defect and the SiO2 react and are consumed to form an etching pit 14 to be visually observed by a microscope.

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