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51. 发明专利

JPH06338633A MANUFACTURE OF II-VI COMPOUND SEMICONDUCTOR THIN FILM AND II-VI COMPOUND SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH06338633A
公开(公告)日：1994-12-06
申请号：JP11690193
申请日：1993-05-19
申请人： SHARP KK
发明人： NAKANISHI KENJI , KITAGAWA MASAHIKO , TOMOMURA YOSHITAKA , HIRATA SHINYA
IPC分类号： H01L21/363 , H01L33/04 , H01L33/14 , H01L33/16 , H01L33/28 , H01L33/30 , H01L33/34 , H01L33/40 , H01L33/62 , H01S5/00 , H01S5/32 , H01S5/327 , H01L33/00 , H01S3/18
摘要： PURPOSE:To reduce a lattice defect, which is introduced in a single crystal thin film at the initial stage of the growth of the thin film, and to form the single crystal thin film having a flat-interface by a method wherein the orientation of a semiconductor single crystal substrate is set as a face slanted at a specified angle from the face (100) and more than one layer of II-VI compound semiconductor single crystal thin film layers are formed on the substrate. CONSTITUTION:The interior of an ultrahigh vacuum container 1 is evacuated by an ion pump 2, 8 sheets of GaAs (100) oriented substrate turned off by the amount corresponding to the inclination of the face are arranged at the positions between 4a and 4b, corresponding to faces slanted by 2 to 16 degrees from the GaAs (100) face in the direction , on a substrate holder 3 made of molybdenum, and are stuck using a metallic element, In. The substrate is heated by a substrate heater 5 and molecular beams of a Zn molecular beam raw material 6, an Se molecular beam raw material 8 and a Cl molecular beam raw material 10 are respectively emitted toward the substrate from the raw materials 6, 8 and 10. Lastly, the growth time of a thin film is changed and the N-type Cl-doped ZnSe thin film is formed. Accordingly, it becomes possible to obtain a flat thin film having a high crystallinity.

52. 发明专利

JPH06237039A SEMICONDUCTOR LASER 失效
公开(公告)号：JPH06237039A
公开(公告)日：1994-08-23
申请号：JP2091293
申请日：1993-02-09
申请人： NEC CORP
发明人： IWATA HIROSHI
IPC分类号： H01S5/00 , H01S5/20 , H01S5/30 , H01S5/32 , H01S5/327 , H01S5/34 , H01S5/347 , H01S3/18
摘要： PURPOSE:To provide a blue emission semiconductor laser by using a semiconductor, in which a hetero-junction takes a type 2, including a II-VI compound semiconductor. CONSTITUTION:Electrons are confined into an electron confinement layer 24, holes are confined into a hole confinement layer 26, and electrons and holes are recombined by a quantum well layer 25. An electron barrier layer 23 and a hole barrier layer 27 prevent the diffusion of electrons and holes respectively. An (n) clad layer 22 and a (p) clad layer 28 confine light.

53. 发明专利

JPH0652807B2 失效
公开(公告)号：JPH0652807B2
公开(公告)日：1994-07-06
申请号：JP7468591
申请日：1991-03-14
IPC分类号： H01L31/0296 , H01L33/00 , H01L33/06 , H01L33/28 , H01S5/00 , H01S5/02 , H01S5/30 , H01S5/327 , H01S5/347 , H01S3/18

54. 发明专利

JPH06181364A AREA EMISSION TYPE SEMICONDUCTOR LASER AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH06181364A
公开(公告)日：1994-06-28
申请号：JP4455793
申请日：1993-02-09
申请人： SEIKO EPSON CORP
发明人： MORI KATSUMI , KONDO TAKAYUKI , SATO JUNJI
IPC分类号： H01S5/00 , H01S5/327 , H01S3/18
摘要： PURPOSE:To enhance a resonator in reflectivity under an electrode so as to obtain an area emission type semiconductor laser of high efficiency by a method wherein a multilayered semiconductor film mirror is provided under the electrode. CONSTITUTION:A set of reflecting mirrors 104 and 114 and semiconductor layers interposed between the mirrors 104 and 114 are provided. At least, one layer 107 out of the semiconductor layers is formed into a pillar or pillars to constitute an optical resonator, and a II to VI compound semiconductor epitaxial layer 109 buried around the pillar-shaped semiconductor layer 107 is included. A light projecting reflecting mirror out of reflecting mirrors is composed of a distributed reflection type multilayered film mirror 114 where first layers of III-V compound semiconductor and second layers of III-V compound semiconductor different from the first layer in refractive index are alternately laminated, a metal electrode 110 where a light projecting aperture is provided onto the second layer, and a dielectric multilayered film mirror 111 where third layers formed of dielectric material and fourth layers formed of dielectric material different from the third layer in refractive index are alternately laminated on the light projecting aperture.

55. 发明专利

JPH05335267A 失效
公开(公告)号：JPH05335267A
公开(公告)日：1993-12-17
申请号：JP16010192
申请日：1992-05-28
申请人： SONY CORP
发明人： MIYAJIMA TAKAO , NARUI FUMIYO
IPC分类号： H01L21/28 , H01L33/28 , H01L33/30 , H01L33/40 , H01S5/00 , H01S5/042 , H01S5/327 , H01S5/347 , H01L33/00 , H01S3/18
摘要： PURPOSE:To provide an ohmic electrode which is provided in a group II-VI N-type crystal layer in ZnSe, etc., and has a low specific resistance of contact, stable characteristic and uniform ohmic characteristic, and a method of formation of the electrode. CONSTITUTION:A method for forming an ohmic electrode 22 in a group II-VI N-type crystal layer is composed of a process of forming a heavily-doped layer 20 in a group II-VI N-type crystal layer 18, a process of etching a surface layer of the heavily-doped layer 20 and a process of forming a Ti layer 24 on the etched heavily doped layer 20 and for further forming metallic layers 26, 28 thereon. The ohmic electrode 22 is formed on a group II-VI N-type crystalline heavily doped layer 20 and consists of the Ti layer 24 and metal layers 26, 28 from the heavily-doped side.

56. 发明专利

JPH05190984A MATERIAL FOR SOLID-SOLUTION SEMICONDUCTOR LASER ELEMENT AND LASER ELEMENT 失效
公开(公告)号：JPH05190984A
公开(公告)日：1993-07-30
申请号：JP230792
申请日：1992-01-09
申请人： ELECT & MAGN ALLOYS RES INST
发明人： MASUMOTO TAKESHI , MOCHIZUKI KATSUMI , ABE TSUGUJI
IPC分类号： H01L21/20 , H01L33/06 , H01L33/28 , H01S5/00 , H01S5/30 , H01S5/32 , H01S5/327 , H01S5/34 , H01S5/347
摘要： PURPOSE:To provide materials for solid-solution semiconductor laser element, which can be used for the formation of a laser element which oscillates at an infrared region of a wavelength of 0.4 to 8mum is variable in wavelength and has a lattice matching doulbe heterojunction or a lattice matching quantum well structure. CONSTITUTION:(1) A material for solid-solution semiconductor laser element, which is shown by a general formula of Ca1-xPbxXo (provided that, 0

57. 发明专利

JPH0575217A SEMICONDUCTOR LIGHT EMITTING ELEMENT 失效
公开(公告)号：JPH0575217A
公开(公告)日：1993-03-26
申请号：JP3225392
申请日：1992-02-19
申请人： SONY CORP
发明人： OKUYAMA HIROYUKI , AKIMOTO KATSUHIRO
IPC分类号： H01L33/14 , H01L33/28 , H01L33/30 , H01S5/00 , H01S5/327
摘要： PURPOSE:To get a double heterojunction type semiconductor light emitting element of short wavelength light emission, wherein a base substance such as GaAs, etc., is used, by constituting first and second clad layers out of ZnMgSSe compound semiconductors. CONSTITUTION:First clad layer 2, an active layer 3, and a second clad layer 4 are continuously grown epitaxially by an MBE method on a substrate 1 consisting of GaAs, ZnSe, or GaP single crystal substrate. The first and second clad layers 2 and 4 consist of ZnMgSSe compound semiconductors, and are turned into n-type by the doping with Cl, Ga, or the like, or turned into p-type by the doping with N, O, or the like. And the light emitting end face 8 is made of cleavage fake. This way, the clad layers 2 and 4 are constituted, so a semiconductor laser of short wavelength light emission, which is excellent in property such as that the emission efficiency is high, etc., and is capable of stable operation and further continuous operation and operation at room temperature, too, can be gotten at low cost.

58. 发明专利

JPH04363086A SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
公开(公告)号：JPH04363086A
公开(公告)日：1992-12-15
申请号：JP26356491
申请日：1991-10-11
申请人： HITACHI LTD
发明人： UDA MASAHITO , OYA AKIRA , OTOSHI SO
IPC分类号： H01L33/06 , H01L33/10 , H01L33/14 , H01L33/28 , H01L33/30 , H01L33/34 , H01S5/00 , H01S5/22 , H01S5/223 , H01S5/327
摘要： PURPOSE:To obtain a blue semiconductor laser and to utilize it for a light source, etc., for a high density optical disk by disposing third semiconductor containing composition of Zn (S, Se) interposed to be held between first semiconductor and second semiconductor containing composition of (Cd, Zn)S on a GaAs or ZnSe substrate. CONSTITUTION:An N-doped p-type Zn0.43Cd0.57S clad layer 2 is grown 3mum thick on a p-type GaAs substrate 1 in plane (100), heated to 350 deg.C, then a ZnS0.08 Se0.92 active layer 3 is grown 0.03mum, and an Al-doped n-type Zn0.43Cd0.57S clad layer 4 is grown 1mum thereon. A current narrowing structure is formed by reactive ion etching(RIE) using BF3 as an etchant, insulated by a high resistance SiO2 region 5, an electrode 6 is then formed, and wired 7. When a forward bias DC 4V is applied to this semiconductor element, a blue laser light having 50meV of a half value width at 454nm of a wavelength as a central wavelength is obtained from a cleaved surface at the ambient temperature.

59. 发明专利

JPH0494584A MANUFACTURE OF INTEGRATED CIRCUIT 失效
公开(公告)号：JPH0494584A
公开(公告)日：1992-03-26
申请号：JP21291490
申请日：1990-08-10
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MATSUDA KAORU , NARISAWA TADASHI
IPC分类号： H01L21/425 , G02F1/09 , H01L27/15 , H01S5/00 , H01S5/327
摘要： PURPOSE:To reduce the weight and size of an element by implanting magnetic ions in a group II-VI compound semiconductor such as ZnSe, etc., and forming a region made of a thin rare magnetic semiconductor. CONSTITUTION:An ZnSe substrate 1 is employed as a group II-VI compound semiconductor, and masked with a mask 2 except a part. Then, Mn ions 3 are implanted in dose of about 10 per 1cm at a predetermined acceleration voltage. After the mask 2 is removed, it is annealed at about 1000 deg.C in a momentarily heating lamp annealing furnace for 10min, and the substrate 1 is partly formed of ZnMeSe 4 of a thin rare magnetic semiconductor region. Thus, optical loss at the time of coupling can be reduced, and high reliability can be obtained.

60. 发明专利

JPH0391270A SEMICONDUCTOR LUMINOUS ELEMENT 失效
公开(公告)号：JPH0391270A
公开(公告)日：1991-04-16
申请号：JP22471289
申请日：1989-09-01
申请人： KOKUSAI DENSHIN DENWA CO LTD
发明人： NISHIMURA KOUSUKE , SAKAI KAZUO
IPC分类号： H01L33/06 , H01L33/28 , H01L33/30 , H01L33/34 , H01L33/44 , H01S5/00 , H01S5/02 , H01S5/32 , H01S5/327 , H01S5/347
摘要： PURPOSE:To remove the distortion of a growth layer due to temperature change so as to improve the quality by constituting this out of a semiconductor substrate consisting of a group III-V compound semiconductor or a group IV semiconductor and a group II-VI compound semiconductor layer whose grating approximately matches this substrate and line expansion coefficient is approximately equal. CONSTITUTION:An n-side clad layer 2 consisting of n-CD0.55Zn0.45S0.95Se0.05, an active layer 3 consisting of Cd0.39Zn0.61S0.31Se0.69, and a p-side clad layer 4 consisting of p-Cd0.55Zn0.45S0.95Se0.05 are laminated in order on an n-GaAs substrate 1, and an insulating film 5 and an electrode 6, on the surface, and an electrode, on the rear, are formed. This way, by adjusting the composition ratio of Cd of the group II element of a group II-VI compound semiconductor layer, the line expansion coefficient of the group II-VI compound semiconductor layer can be made approximately equal to the line expansion coefficient of the substrate. Accordingly, high quality of crystal, which is hardly subjected to the distortion by temperature change, can be obtained, as a result a high performance of short wave length generating element can be obtained.

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