PURPOSE:To remove the distortion of a growth layer due to temperature change so as to improve the quality by constituting this out of a semiconductor substrate consisting of a group III-V compound semiconductor or a group IV semiconductor and a group II-VI compound semiconductor layer whose grating approximately matches this substrate and line expansion coefficient is approximately equal. CONSTITUTION:An n-side clad layer 2 consisting of n-CD0.55Zn0.45S0.95Se0.05, an active layer 3 consisting of Cd0.39Zn0.61S0.31Se0.69, and a p-side clad layer 4 consisting of p-Cd0.55Zn0.45S0.95Se0.05 are laminated in order on an n-GaAs substrate 1, and an insulating film 5 and an electrode 6, on the surface, and an electrode, on the rear, are formed. This way, by adjusting the composition ratio of Cd of the group II element of a group II-VI compound semiconductor layer, the line expansion coefficient of the group II-VI compound semiconductor layer can be made approximately equal to the line expansion coefficient of the substrate. Accordingly, high quality of crystal, which is hardly subjected to the distortion by temperature change, can be obtained, as a result a high performance of short wave length generating element can be obtained.