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51. 发明专利

JP2007228319A Piezoelectric thin-film device and method of manufacturing same 有权
标题翻译：压电薄膜器件及其制造方法
公开(公告)号：JP2007228319A
公开(公告)日：2007-09-06
申请号：JP2006047821
申请日：2006-02-24
申请人： Ngk Insulators Ltd , Ngk Optoceramics Co Ltd , エヌジーケイ・オプトセラミックス株式会社 , 日本碍子株式会社
发明人： YOSHINO TAKASHI , YAMAGUCHI SHOICHIRO , IWATA YUICHI , HAMASHIMA AKIRA , SUZUKI KENGO
IPC分类号： H03H3/02 , H01L41/09 , H01L41/18 , H01L41/22 , H01L41/313 , H01L41/337 , H03H9/17 , H03H9/58
CPC分类号： H03H3/02 , H03H9/02023 , H03H9/02031 , H03H9/02039 , H03H9/02055 , H03H9/02133 , H03H9/173 , H03H9/564 , H03H9/568 , H03H2003/021 , Y10T29/42 , Y10T29/435 , Y10T29/49005
摘要： PROBLEM TO BE SOLVED: To increase the degree of freedom when selecting a crystal orientation in a piezoelectric material for composing a piezoelectric thin film and a piezoelectric thin film in a piezoelectric thin-film device. SOLUTION: In a piezoelectric thin-film filter 1 including four piezoelectric thin-film resonators R11-R14, a filter section 11, which provides the filter function of the piezoelectric thin-film filter 1, is adhered to a flat base substrate 13, which supports the filter section 11 mechanically, via an adhesive layer 12. When the piezoelectric thin-film filter 1 is manufactured, the piezoelectric thin film 111 is obtained by performing removal processing to a piezoelectric substrate. However, since the piezoelectric thin film 111 obtained by the removal processing cannot carry its own weight by itself, a prescribed member including the piezoelectric substrate is adhered to the base substrate 13 used as a support in advance prior to the removal processing. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了在压电薄膜器件中用于构成压电薄膜和压电薄膜的压电材料中选择晶体取向时提高自由度。解决方案：在包括四个压电薄膜谐振器R11-R14的压电薄膜滤波器1中，提供压电薄膜滤波器1的滤波功能的滤波器部分11粘附到平坦的基底基板通过粘合剂层12机械地支撑过滤器部分11，当制造压电薄膜过滤器1时，通过对压电基板进行去除处理来获得压电薄膜111。然而，由于通过去除处理获得的压电薄膜111本身不能承载其自身重量，所以在去除处理之前，包括压电基板的规定部件预先粘附到用作支撑体的基板13上。版权所有（C）2007，JPO＆INPIT

52. 发明专利

JP2007020164A Bulk acoustic resonator and manufacturing method thereof 有权
标题翻译：大容量声学谐振器及其制造方法
公开(公告)号：JP2007020164A
公开(公告)日：2007-01-25
申请号：JP2006176236
申请日：2006-06-27
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： JUNG KYU-DONG , KWON JONG-OH , KIM WOON-BAE , SO INSO
IPC分类号： H03H9/17 , H01L41/09 , H01L41/187 , H01L41/22 , H03H3/02
CPC分类号： H03H9/173 , H03H3/02 , H03H9/174 , H03H2003/021 , H03H2003/023
摘要： PROBLEM TO BE SOLVED: To provide a bulk acoustic resonator with a high degree of freedom of processes. SOLUTION: The bulk acoustic resonator includes: a substrate to a prescribed region of an upper surface of which a cavity part is formed; a resonator part on one side of which dimples are formed; and an anchor part for connecting the resonator part and the substrate. The resonance part includes: a lower electrode the prescribed region of the lower part surface of which is inwardly recessed; a lower electrode the upper surface corresponding to the recessed region of which is outwardly projected; a piezoelectric layer laminated on the upper surface of the lower electrode; and an upper electrode laminated on the piezoelectric layer. The dimples can be formed to the resonator part and the position and the area of each dimple can be optionally selected by a manufacturer. Since the vibrating direction of the resonance part is adjusted by a method of adjusting the number, the position and the area or the like of each dimple, the process flexibility is increased. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供具有高自由度的体积声谐振器。解决方案：体声波谐振器包括：基板，其上表面的规定区域形成有空腔部分; 在其一侧形成凹坑的谐振器部分; 以及用于连接谐振器部分和基板的锚固部分。共振部包括：下部电极，其下部表面的规定区域向内凹入; 下电极，其上表面对应于其凹陷区域向外突出; 层压在下电极的上表面上的压电层; 和层叠在压电体层上的上部电极。凹坑可以形成到谐振器部分，并且每个凹坑的位置和面积可以由制造商任选地选择。由于通过调整每个凹坑的数量，位置和面积等的方法来调节共振部件的振动方向，因此加工灵活性增加。版权所有（C）2007，JPO＆INPIT

53. 发明专利

JP2006270506A Piezoelectric resonance element and manufacturing method thereof 有权
标题翻译：压电谐振元件及其制造方法
公开(公告)号：JP2006270506A
公开(公告)日：2006-10-05
申请号：JP2005085607
申请日：2005-03-24
申请人： Sony Corp , ソニー株式会社
发明人： SATO KEI
IPC分类号： H03H9/17 , H01L41/09 , H01L41/18 , H01L41/22 , H01L41/316 , H03H3/02
CPC分类号： H03H9/173 , H03H9/02133 , H03H2003/021
摘要： PROBLEM TO BE SOLVED: To provide a piezoelectric resonance element where crack of a piezoelectric layer can be prevented, and to provide a manufacturing method thereof. SOLUTION: In the piezoelectric resonance element, a lower electrode 13, the piezoelectric layer 14 and an upper electrode 15 are provided in this order on a substrate 11 through an air layer 12, and a lamination structure of the lower electrode 13, the piezoelectric layer 14 and the upper electrode 15 is included at least partially. Internal stress of the piezoelectric layer 14 is ≥-300 MPa and ≤90 MPa in the piezoelectric resonance element and the manufacturing method thereof. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供可以防止压电层的裂纹的压电谐振元件，并提供其制造方法。解决方案：在压电谐振元件中，下电极13，压电层14和上电极15依次通过空气层12设置在基板11上，下电极13的层压结构，至少部分地包括压电层14和上电极15。压电谐振元件的压电层14的内应力为≥300MPa，≤90MPa。版权所有（C）2007，JPO＆INPIT

54. 发明专利

JP2006019935A Thin film piezoelectric resonator and manufacturing method thereof 审中-公开
标题翻译：薄膜压电谐振器及其制造方法
公开(公告)号：JP2006019935A
公开(公告)日：2006-01-19
申请号：JP2004194380
申请日：2004-06-30
申请人： Toshiba Corp , 株式会社東芝
发明人： OHARA RYOICHI , YANASE NAOKO , ITAYA KAZUHIKO , SANO KENYA , YASUMOTO YASUAKI , ABE KAZUHIDE , NAGANO TOSHIHIKO , NISHIGAKI MICHIHIKO , KAWAKUBO TAKASHI
IPC分类号： H03H9/17 , H01L41/09 , H01L41/18 , H01L41/187 , H01L41/22 , H01L41/29 , H03H3/02
CPC分类号： H03H9/02094 , H03H3/04 , H03H9/02133 , H03H9/173 , H03H9/174 , H03H9/703 , H03H2003/021 , H03H2003/023
摘要： PROBLEM TO BE SOLVED: To provide a thin film resonator in which an upper electrode has small series resistance and which has a large electromechanical coupling coefficient k t 2 by avoiding an increase in resistance and an increase in residual stress characteristic of cases wherein high-fusion-point metal is used for the upper electrode. SOLUTION: The thin film piezoelectric resonator is equipped with a substrate 11, a lower electrode 14 a portion of which is held mechanically held on the substrate 11 in a hollow state, a piezoelectric material film 15 arranged on the lower electrode 14, and the upper electrode 16 on the piezoelectric material film 15. The upper electrode 16 has a crystal axis oriented along the thickness of the piezoelectric material film 15, and an orientation half-value width concerned with the crystal axis is ≤6°. Then thickness-directional bulk vibration in the piezoelectric material film 15 is used. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种薄膜谐振器，其中上电极具有小的串联电阻并且具有大的机电耦合系数k 2 ，通过避免高熔点金属用于上部电极的情况下的电阻增加和残余应力特性的增加。解决方案：薄膜压电谐振器配备有基板11，其一部分以中空状态机械地保持在基板11上的下电极14，布置在下电极14上的压电材料膜15，上压电材料膜15上的上电极16.上电极16具有沿着压电材料膜15的厚度取向的晶轴，与晶轴相关的取向半值宽度为≤6°。然后使用压电材料膜15中的厚度方向的体积振动。版权所有（C）2006，JPO＆NCIPI

55. 发明专利

JP2005333642A Air gap type thin film bulk acoustic resonator and its manufacturing process 审中-公开
标题翻译：气隙式薄膜膨胀式声学谐振器及其制造工艺
公开(公告)号：JP2005333642A
公开(公告)日：2005-12-02
申请号：JP2005143925
申请日：2005-05-17
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： SO INSO , KA HEICHU , PARK YUN-KWON , KIM JONG-SEOK
IPC分类号： H01L41/09 , H01L41/187 , H01L41/22 , H03H3/02 , H03H9/17 , H03H9/24 , H03H9/56
CPC分类号： H03H9/173 , H03H3/02 , H03H2003/021 , Y10T29/42
摘要： PROBLEM TO BE SOLVED: To provide an air gap type thin film bulk acoustic resonator exhibiting high manufacturing yield in which resonance characteristics are enhanced as compared with that of prior art. SOLUTION: The air gap type thin film bulk acoustic resonator comprises a substrate having a cavity formed in a predetermined region on the upper surface, a resonator having such a structure as a first electrode, a piezoelectric substrate and a second electrode are formed sequentially in layers, and at least one via hole communicating with the cavity while penetrating the lower part of the substrate. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：与现有技术相比，提供一种具有高制造成品率的气隙型薄膜体声波谐振器，其中谐振特性得到增强。解决方案：气隙型薄膜体声波谐振器包括具有形成在上表面上的预定区域中的空腔的基板，形成具有如第一电极，压电基板和第二电极的结构的谐振器以及至少一个与空腔连通的通孔，同时穿透基底的下部。版权所有（C）2006，JPO＆NCIPI

56. 发明专利

JP2005311912A Method of manufacturing resonator 有权
标题翻译：制造谐振器的方法
公开(公告)号：JP2005311912A
公开(公告)日：2005-11-04
申请号：JP2004128921
申请日：2004-04-23
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： KANDA ATSUHIKO , UEDA DAISUKE , TANAKA TAKESHI , UEMOTO YASUHIRO , HACHIMAN KAZUHIRO , TSURUMI NAOHIRO
IPC分类号： H01L41/09 , H01L41/18 , H01L41/187 , H01L41/22 , H01L41/312 , H01L41/319 , H03H3/02 , H03H9/00 , H03H9/02 , H03H9/17
CPC分类号： H03H3/02 , H03H9/02102 , H03H9/173 , H03H9/174 , H03H9/175 , H03H2003/021 , H03H2003/023 , H03H2003/025 , Y10T29/42 , Y10T156/10
摘要： PROBLEM TO BE SOLVED: To manufacture a resonator having a high performance by a good yield and a low cost by simplifying a manufacturing process of a complex resonator which must provide a sacrificial layer. SOLUTION: First, a YAG laser is irradiated at a resonator substrate 1 made of a silicon, and a through hole 1a is formed in the resonator substrate 1. Then, a buffer layer 3 made of a gallium nitride and a piezoelectric film 4 made of an aluminum nitride are deposited by an epitaxial growing method on a substrate 2 for formation made of a silicon carbide. Next, the piezoelectric film 4 is laminated on the main surface of the resonator substrate 1, and the structure that an air gap 1b is provided, is formed under the piezoelectric film 4. Further, the YAG laser is incident from the substrate 2 side for the formation, the buffer layer 3 is dissolved and the substrate 2 for the formation is exfoliated from the piezoelectric film 4. Finally, electrodes 4 made of molybdenum are formed on the upper and lower surfaces of the piezoelectric film 4 by using a method, such as a normal vacuum deposition, etc. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：通过简化必须提供牺牲层的复合谐振器的制造工艺，通过良好的产量和低成本制造具有高性能的谐振器。解决方案：首先，在由硅制成的谐振器基板1上照射YAG激光器，并且在谐振器基板1中形成通孔1a。然后，将由氮化镓制成的缓冲层3和压电膜 4通过外延生长方法由氮化铝制成，用于由碳化硅制成的基板2。接下来，在压电膜4的下方形成有在谐振器基板1的主面上形成压电膜4，设置有气隙1b的结构。此外，YAG激光从基板2侧入射，形成时，缓冲层3被溶解，并且用于形成的基板2从压电膜4剥离。最后，通过使用这样的方法在压电膜4的上表面和下表面上形成由钼制成的电极4 作为正常的真空沉积等。版权所有（C）2006，JPO＆NCIPI

57. 发明专利

JP2005304021A Bulk acoustic wave resonator, filter, duplexer, and its manufacturing method 有权
标题翻译：大容量声波谐波器，滤波器，双工器及其制造方法
公开(公告)号：JP2005304021A
公开(公告)日：2005-10-27
申请号：JP2005106584
申请日：2005-04-01
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： SO INSO , KA HEICHU , PARK YUN-KWON , KIM DUCK-HWAN
IPC分类号： H03H9/17 , H03H3/02 , H03H9/02 , H03H9/58 , H03H9/70
CPC分类号： H03H3/02 , H03H9/02149 , H03H9/105 , H03H9/173 , H03H9/174 , H03H2003/021 , H03H2003/023 , Y10T29/42
摘要： PROBLEM TO BE SOLVED: To provide a bulk acoustic wave resonator, a filter, a duplexer, and its manufacturing method. SOLUTION: The resonator having a membrane provided with a piezo-electic layer between a first electrode and a second electrode is situated on a cavity formed from a back surface of a supporting structure. In a first embodiment, a wall of the cavity is substantially perpendicular with respect to the back surface of the supporting structure. In a second embodiment, the first electrode is provided at the cavity electrically connected to an electrode at the back surface of the supporting structure. In the other embodiment, the cavity forms a via at the back surface of the supporting structure by etching through a via hole. In the embodiment, more flexible resonator can be designed by relatively reducing a request to an arrangement compared to the other design. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种体声波谐振器，滤波器，双工器及其制造方法。解决方案：具有在第一电极和第二电极之间设置有压电层的膜的谐振器位于由支撑结构的后表面形成的空腔上。在第一实施例中，腔的壁基本上相对于支撑结构的后表面垂直。在第二实施例中，第一电极设置在与支撑结构的后表面处的电极电连接的空腔处。在另一实施例中，腔通过通孔蚀刻而在支撑结构的背面形成通孔。在该实施例中，与其他设计相比，可以通过相对地减少对布置的请求来设计更灵活的谐振器。版权所有（C）2006，JPO＆NCIPI

58. 发明专利

JP2005210004A Piezoelectric element, piezoelectric actuator, ink-jet type recording head, ink-jet printer, surface-acoustic-wave element, frequency filter, oscillator, electronic circuit, thin-film piezoelectric resonator, and electronic appliance 有权
标题翻译：压电元件，压电致动器，喷墨型记录头，喷墨打印机，表面波形元件，频率滤波器，振荡器，电子电路，薄膜压电谐振器和电子设备
公开(公告)号：JP2005210004A
公开(公告)日：2005-08-04
申请号：JP2004017108
申请日：2004-01-26
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： NOGUCHI MOTOHISA , HIRAI EIKI
IPC分类号： B41J2/045 , B41J2/055 , B41J2/135 , B41J2/14 , B41J2/145 , B41J2/16 , H01L41/08 , H01L41/09 , H01L41/18 , H01L41/187 , H01L41/22 , H01L41/311 , H01L41/319 , H01L41/39 , H02N2/00 , H03B5/30 , H03H3/02 , H03H3/08 , H03H9/02 , H03H9/05 , H03H9/17 , H03H9/25 , H03H9/64 , H01L41/24
CPC分类号： B41J2/161 , B41J2/1628 , B41J2/1629 , B41J2/1642 , B41J2/1645 , B41J2/1646 , B41J2202/03 , C04B35/499 , C04B2235/3206 , C04B2235/3224 , C04B2235/3251 , C04B2235/3258 , C04B2235/3272 , C04B2235/3275 , C04B2235/3279 , C04B2235/3284 , C04B2235/3286 , C04B2235/768 , H01L41/1875 , H01L41/317 , H03H3/02 , H03H3/08 , H03H9/02015 , H03H9/02031 , H03H9/02574 , H03H9/0542 , H03H9/173 , H03H9/174 , H03H2003/021 , H03H2003/023
摘要： PROBLEM TO BE SOLVED: To provide a piezoelectric element having the piezoelectric film of a high piezoelectric modulus and provide a piezoelectric actuator, an ink-jet type recording head, an ink-jet printer, a surface-acoustic-wave element, a frequency filter, an oscillator, an electronic circuit, a thin-film piezoelectric resonator, and an electronic appliance which all use the piezoelectric element. SOLUTION: The piezoelectric element 1 has a seed layer 5 formed on a base body and has a piezoelectric film 6 formed on the seed layer 5. The seed layer 5 is made of a perovskite type piezoelectric material and is so subjected to priority orientation as to become pseudo-cubic crystal (100). The piezoelectric film 6 has a rhombohedral structure and is made of a relaxer material subjected to priority orientation. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决问题的方案为了提供具有高压电模量的压电膜的压电元件，并提供压电致动器，喷墨式记录头，喷墨打印机，表面声波元件，频率滤波器，振荡器，电子电路，薄膜压电谐振器和全部使用压电元件的电子设备。解决方案：压电元件1具有形成在基体上的种子层5，并且具有形成在种子层5上的压电膜6.种子层5由钙钛矿型压电材料制成，并且具有优先权取向为假立方晶体（100）。压电膜6具有菱形结构，并且由优先取向的松弛材料制成。版权所有（C）2005，JPO＆NCIPI

59. 发明专利

JP2004064786A Resonator having seed layer 审中-公开
公开(公告)号：JP2004064786A
公开(公告)日：2004-02-26
申请号：JP2003278833
申请日：2003-07-24
申请人： Agilent Technol Inc , アジレント・テクノロジーズ・インクAgilent Technologies, Inc.
发明人： BRADLEY PAUL D , LEE DONALD , FIGUEREDO DOMINGO A
IPC分类号： H03H3/02 , H03H9/02 , H03H9/17 , H03H9/54
CPC分类号： H03H9/173 , H03H3/02 , H03H9/02141 , H03H9/02149 , H03H2003/021 , Y10T29/42
摘要： PROBLEM TO BE SOLVED: To provide a resonator provided with a seed layer, which can be utilized especially as a filter for an electronic circuit. SOLUTION: A thin film resonator (32) having the seed layer (40) and a method for manufacturing the thin film resonator are disclosed. The resonator has a seed layer (38) to help the manufacture of a high quality of piezoelectric layer (17) of the resonator (32). The resonator has the seed layer (38), a bottom electrode (16), a piezoelectric layer (15), and a top electrode (20). The seed layer (40) is made of aluminum nitride (AlN) or the like to form a piezoelectric layer (17) therein. COPYRIGHT: (C)2004,JPO

60. 发明专利

JP2004064088A Thin film resonator protected from electrostatic discharge 审中-公开
标题翻译：静电放电保护的薄膜共振器
公开(公告)号：JP2004064088A
公开(公告)日：2004-02-26
申请号：JP2003278831
申请日：2003-07-24
申请人： Agilent Technol Inc , アジレント・テクノロジーズ・インクAgilent Technologies, Inc.
发明人： BRADLEY PAUL D
IPC分类号： H01L29/872 , H01L21/822 , H01L27/04 , H01L29/47 , H01L41/08 , H01L41/18 , H01L41/187 , H03H3/02 , H03H9/02 , H03H9/05 , H03H9/17
CPC分类号： H03H9/173 , H03H3/02 , H03H9/02141 , H03H9/02149 , H03H9/0542 , H03H2003/021
摘要： PROBLEM TO BE SOLVED: To provide a thin film resonator protected from electrostatic discharge.
SOLUTION: A filter having a thin film resonator (12) on a semiconductor substrate (14), and a manufacturing method for manufacturing the filter are disclosed. The filter has a bonding pad connected to the resonator (12), and forms a shottky diode together with the substrate (14) in contact with the substrate (14), and protects the resonator (12) from electrostatic discharge. The bonding pad (65) is configured by a conductive material.
COPYRIGHT: (C)2004,JPO

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