专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明专利

JP4551121B2 Semiconductor laser device 有权
公开(公告)号：JP4551121B2
公开(公告)日：2010-09-22
申请号：JP2004153200
申请日：2004-05-24
申请人：シャープ株式会社
发明人：伸一川戸 , 晃広松本 , 昌規渡辺
IPC分类号： H01S5/223 , H01S5/028 , H01S5/042 , H01S5/10 , H01S5/16 , H01S5/20 , H01S5/22 , H01S5/32 , H01S5/343
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/028 , H01S5/0287 , H01S5/0425 , H01S5/1014 , H01S5/1039 , H01S5/162 , H01S5/168 , H01S5/2022 , H01S5/2214 , H01S5/2219 , H01S5/3211 , H01S5/34326 , H01S5/3436 , H01S2301/18

52. 发明专利

JP2010109139A Semiconductor laser element 审中-公开
标题翻译：半导体激光元件
公开(公告)号：JP2010109139A
公开(公告)日：2010-05-13
申请号：JP2008279475
申请日：2008-10-30
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SHIMIZU JUNICHIRO , NOMOTO ETSUKO , NAKATSUKA SHINICHI , OTOSHI SO , TANIGUCHI TAKAFUMI
IPC分类号： H01S5/323
CPC分类号： H01S5/18 , H01S5/028 , H01S5/162 , H01S5/20 , H01S5/3211 , H01S2301/173 , H01S2301/176
摘要： PROBLEM TO BE SOLVED: To suppress the degradation of light output characteristics due to oxidation of an Al containing semiconductor layer in a vertical emission type semiconductor laser element with a horizontal resonator including the Al containing semiconductor layer.
SOLUTION: A lower clad layer 102, an active layer 103 and an upper clad layer 104 are stacked in order from the lowest layer on a principal surface of a substrate 101 made of GaAs. The upper clad layer 104 is made of AlGaAs or AlGaInP containing a high concentration of Al. An emission surface layer 105 provided with a function of preventing oxidation of Al contained in the upper clad layer 104 is formed on the upper clad layer 104, and an electrode contact layer 106 is formed on the emission surface layer 105. The emission surface layer 105 is made of InGaP, and the electrode contact layer 106 is made of GaAs.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：为了抑制具有包含含Al半导体层的水平共振器的垂直发射型半导体激光元件中含Al半导体层的氧化引起的光输出特性的劣化。解决方案：从由GaAs制成的衬底101的主表面上的最下层依次堆叠下包层102，有源层103和上覆层104。上覆盖层104由含有高浓度Al的AlGaAs或AlGaInP制成。在上覆盖层104上形成具有防止上覆盖层104中包含的Al的氧化功能的发射面层105，在发光面层105上形成电极接触层106.发光面层105 由InGaP制成，电极接触层106由GaAs制成。版权所有（C）2010，JPO＆INPIT

53. 发明专利

JP2009181993A Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：JP2009181993A
公开(公告)日：2009-08-13
申请号：JP2008017309
申请日：2008-01-29
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： OTSUKA KENICHI
IPC分类号： H01S5/22 , H01S5/323
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0425 , H01S5/16 , H01S5/162 , H01S5/2004 , H01S5/22 , H01S5/3211
摘要： PROBLEM TO BE SOLVED: To obtain a semiconductor laser being capable of preventing the deterioration of an end face and facilitating a manufacture.
SOLUTION: An n-AlGaN clad layer 12 (a lower clad layer), a quantum-well active layer 14 (an active layer) and a p-AlGaN clad layer 16 (an upper clad layer) are laminated successively on an n-GaN substrate 11 (a semiconductor substrate). Ridges 17 are formed to the p-AlGaN clad layer 16. The thicknesses of the p-AlGaN clad layer 16 in the vicinity of the end faces of a resonator are larger than that of the p-AlGaN clad layer 16 at the center of the resonator at the ridges 17.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：获得能够防止端面劣化并且便于制造的半导体激光器。解决方案：将n-AlGaN包层12（下包层），量子阱活性层14（有源层）和p-AlGaN包层16（上包层）依次层叠在 n-GaN衬底11（半导体衬底）。在p-AlGaN包层16上形成有R-17。在谐振器的端面附近的p-AlGaN包层16的厚度大于在p-AlGaN包层16的中心的p-AlGaN包层16的厚度。谐振器在脊17。版权所有（C）2009，JPO＆INPIT

54. 发明专利

JP2009076602A Two-wavelength semiconductor laser device, and manufacturing method thereof 审中-公开
标题翻译：双波长半导体激光器件及其制造方法
公开(公告)号：JP2009076602A
公开(公告)日：2009-04-09
申请号：JP2007242856
申请日：2007-09-19
申请人： Panasonic Corp , パナソニック株式会社
发明人： KUME MASAHIRO , TAKASUKA SHOICHI , TAKAYAMA TORU , KIDOGUCHI ISAO
IPC分类号： H01S5/22
CPC分类号： H01S5/4031 , H01S5/162 , H01S5/209 , H01S5/22 , H01S5/4087
摘要： PROBLEM TO BE SOLVED: To provide a two-wavelength semiconductor laser device suppressing the cause of a failure because of a diffusion of a dopant, and to provide a manufacturing method thereof.
SOLUTION: This two-wavelength semiconductor laser device is manufactured by integrating a first semiconductor laser element 1 and a second semiconductor laser element 2 on a substrate 10 composed of a compound semiconductor, wherein a constituting material for an etching stop layer 15 of the first semiconductor laser element 1 is a material in which impurities are harder to diffuse than in a constituting material for an etching stop layer 25 of the second semiconductor laser element 2.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供抑制掺杂剂扩散引起的故障的双波长半导体激光器件，并提供其制造方法。解决方案：该双波长半导体激光器件通过将第一半导体激光元件1和第二半导体激光元件2集成在由化合物半导体构成的基板10上而制造，其中，用于蚀刻停止层15的构成材料第一半导体激光元件1是与第二半导体激光元件2的蚀刻停止层25的构成材料相比，杂质难以扩散的材料。（C）2009，JPO＆INPIT

55. 发明专利

JP4136988B2 Semiconductor laser device 有权
公开(公告)号：JP4136988B2
公开(公告)日：2008-08-20
申请号：JP2004107783
申请日：2004-03-31
申请人：松下電器産業株式会社
发明人：哲生上田 , 勲木戸口 , 敏也河田 , 雅博粂
IPC分类号： H01S5/227 , H01S5/00 , H01S5/02 , H01S5/10 , H01S5/16 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/343 , H01S5/40
CPC分类号： B82Y20/00 , H01S5/1039 , H01S5/162 , H01S5/168 , H01S5/2214 , H01S5/2231 , H01S5/34333 , H01S5/4031 , H01S5/4087 , H01S2301/18

57. 发明专利

JP2007227894A Nitride semiconductor laser element, and manufacturing method therefor 有权
标题翻译：氮化物半导体激光元件及其制造方法
公开(公告)号：JP2007227894A
公开(公告)日：2007-09-06
申请号：JP2006353718
申请日：2006-12-28
申请人： Nichia Chem Ind Ltd , 日亜化学工業株式会社
发明人： MORIZUMI TOMONORI , MICHIGAMI ATSUO , TANISAKA SHINGO
IPC分类号： H01S5/223
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/162 , H01S5/2009 , H01S5/22 , H01S5/3063 , H01S5/3216
摘要： PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser element capable of preventing heating due to resistance in the vicinity of end faces, improving the characteristic and life of the end faces, and lengthening the life of the element itself by suppressing the injection of current into the vicinity of the end faces of a resonator in a nitride semiconductor layer with relatively high resistance; and to provide a manufacturing method therefor.
SOLUTION: The nitride semiconductor laser element comprises: a nitride semiconductor layer having a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer, which are laminated in this order; and resonator end faces that are formed on the nitride semiconductor layer to face each other. At least a light output region on the resonator end faces contains an impurity, and the light output region has a band gap wider than other regions in the active layer or has an impurity density higher than that of other regions in the active layer.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种氮化物半导体激光元件，其能够防止由于端面附近的电阻而产生的加热，从而提高端面的特性和寿命，并且通过抑制端面延长元件本身的寿命在具有较高电阻的氮化物半导体层中的谐振器的端面附近注入电流; 并提供其制造方法。解决方案：氮化物半导体激光元件包括：具有第一氮化物半导体层，有源层和第二氮化物半导体层的氮化物半导体层，其按顺序层叠; 以及形成在氮化物半导体层上以彼此面对的谐振器端面。谐振器端面上的至少一个光输出区域含有杂质，并且光输出区域具有比有源层中的其它区域宽的带隙或具有比有源层中的其它区域的杂质密度更高的杂质密度。版权所有（C）2007，JPO＆INPIT

58. 发明专利

JP2007201373A Semiconductor laser device 审中-公开
标题翻译：半导体激光器件
公开(公告)号：JP2007201373A
公开(公告)日：2007-08-09
申请号：JP2006021144
申请日：2006-01-30
申请人： Sharp Corp , シャープ株式会社
发明人： SOGABE RYUICHI , KAWAGUCHI YOSHINOBU , KAMIKAWA TAKESHI
IPC分类号： H01S5/343
CPC分类号： H01S5/028 , B82Y20/00 , H01S5/0282 , H01S5/0287 , H01S5/162 , H01S5/34326
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser device having sufficient initial characteristics and a film structure which is excellent in heat radiating property, in high output laser oscillation for stably achieving high output laser oscillation in a long term without decreasing the optical damage level of an outgoing end surface.
SOLUTION: This semiconductor laser device is provided with an active layer on a semiconductor substrate and resonators faced to the both ends of the semiconductor substrate, wherein a first dielectric film formed of oxide and a second dielectric film formed of oxynitride are successively laminated on the resonator end surface.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：为了提供具有良好的初始特性的半导体激光器件和散热性优异的膜结构，在高输出激光振荡中，长期稳定地实现高输出激光振荡而不减少光学出口端面的损伤水平。解决方案：该半导体激光器件在半导体衬底上设置有源层，并且面对半导体衬底的两端的谐振器，其中由氧化物形成的第一电介质膜和由氧氮化物形成的第二电介质膜依次层压在谐振器端面上。版权所有（C）2007，JPO＆INPIT

59. 发明专利

JP2007088188A Multiple wavelength semiconductor laser device 有权
标题翻译：多波长半导体激光器件
公开(公告)号：JP2007088188A
公开(公告)日：2007-04-05
申请号：JP2005274827
申请日：2005-09-22
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： TAKAYAMA TORU , KIDOGUCHI ISAO , KAJIMA TAKAYUKI
IPC分类号： H01S5/22 , H01S5/16 , H01S5/343
CPC分类号： H01S5/40 , H01S5/162 , H01S5/22 , H01S5/4087
摘要： PROBLEM TO BE SOLVED: To provide a multiple wavelength semiconductor laser device capable of facilitating the design of optical system by having a window structure in which the capacity of FFP in the laser beams of respective wavelengths is stabilized, and becomes a requested FFP pattern with respect to the multiple wavelength semiconductor laser device formed on the same substrate. SOLUTION: Every semiconductor laser of respective wavelengths is provided with the window region having different lengths capable of obtaining the optimum FFP with respect to the outgoing lights of respective wavelengths, whereby the same degree of optical output depending property can be given to respective wavelengths and, therefore, the designing of the optical system can be facilitated. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够通过具有其中各个波长的激光束中的FFP的容量稳定的窗口结构来促进光学系统的设计的多波长半导体激光器件，并且成为所要求的FFP 相对于形成在同一基板上的多波长半导体激光器件的图案。解决方案：各个波长的每个半导体激光器设置有具有不同长度的窗口区域，其能够相对于各个波长的出射光获得最佳FFP，由此可以将相同程度的光输出相关性质给予相应的波长，因此可以方便地进行光学系统的设计。版权所有（C）2007，JPO＆INPIT

60. 发明专利

JP2006339477A Semiconductor optical element and module using same 审中-公开
标题翻译：半导体光学元件和使用相同的模块
公开(公告)号：JP2006339477A
公开(公告)日：2006-12-14
申请号：JP2005163576
申请日：2005-06-03
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： AOKI MASAHIRO , NOMOTO ETSUKO
IPC分类号： H01S5/22
CPC分类号： H01S5/34326 , B82Y20/00 , H01S5/02212 , H01S5/1014 , H01S5/1039 , H01S5/12 , H01S5/1237 , H01S5/162 , H01S5/22 , H01S5/3436 , H01S5/4031 , H01S5/4087
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser device which can simultaneously achieve output improvement and kink suppression and can perform high-output operation with a structure achieving these properties within a short chip length.
SOLUTION: In a waveguide configuration of a multi-mode interference laser, a tapered waveguide is intensively inserted between a single-mode waveguide and a multi-mode waveguide. Furthermore, in a waveguide configuration of the multi-mode interference laser, the single-mode waveguide is defined as a passive waveguide. Each of these means and combination thereof solve the problem.
COPYRIGHT: (C)2007,JPO&INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式