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51. 发明专利

JP2010031378A Method of manufacturing sputter target 有权
标题翻译：制造突变目标的方法
公开(公告)号：JP2010031378A
公开(公告)日：2010-02-12
申请号：JP2009245733
申请日：2009-10-26
申请人： Toshiba Corp , 株式会社東芝
发明人： ISHIGAMI TAKASHI , WATANABE KOICHI , NITTA AKIHISA , MAKI TOSHIHIRO , YAGI NORIAKI
IPC分类号： C23C14/34 , C22C21/00 , C22F1/00 , C22F1/04 , C23C14/14 , C23C14/16 , G02F1/1362 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L23/498 , H01L23/52 , H01L23/532 , H01L27/01 , H01L29/78 , H01L29/786 , H03H9/145
CPC分类号： H01L21/32051 , C22C21/00 , C23C14/14 , C23C14/165 , C23C14/3414 , G02F2001/136295 , H01L21/2855 , H01L23/53214 , H01L23/53219 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/16152 , H01L2924/181 , H03H9/14538 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a sputter target by which a wiring film of low resistance preventing the occurrence of hillocks, etching residues, and electrochemical reaction with ITO or the like is deposited with excellent reproducibility, and generation of dust during the sputtering is suppressed. SOLUTION: When manufacturing the sputter target comprising 0.001 to 30 at% of at least one of a first element selected from Y, Sc, La, Ce, Nd, Sm, Gd, Tb, Dy and Er and comprising C as a second element in 1.8 to 1,630 atm ppm to the first element, with the balance comprising substantially Al, an ingot in which an intermetallic compound of the first element and Al is uniformly dispersed is manufactured by the rapid cooling solidification process after melting Al with the first element mixed therein. The ingot is hot-worked or cold-worked and is machined to manufacture the sputter target. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造溅射靶的方法，通过该方法，以优异的再现性沉积具有防止发生小丘，蚀刻残留物和与ITO等的电化学反应的低电阻的布线膜，并且产生溅射时的灰尘被抑制。解决方案：当制造包括0.001至30at％的选自Y，Sc，La，Ce，Nd，Sm，Gd，Tb，Dy和Er中的至少一种的溅射靶时，包括C作为第二元素为1.8至1,630atm ppm，其余量基本上为Al，通过快速冷却固化工艺制备其中第一元素和Al的金属间化合物均匀分散的锭，其中第一元素元素混合。锭被热加工或冷加工，并被加工成制造溅射靶。版权所有（C）2010，JPO＆INPIT

52. 发明专利

JP2009280911A Aluminum alloy film for display device, display device and sputtering target 有权
标题翻译：用于显示器件的铝合金膜，显示器件和溅射靶
公开(公告)号：JP2009280911A
公开(公告)日：2009-12-03
申请号：JP2009105478
申请日：2009-04-23
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： NAKAI JUNICHI , NANBU AKIRA , GOTO YASUSHI , OKUNO HIROYUKI , MIKI AYA
IPC分类号： C22C21/00 , C23C14/34 , G02F1/1368 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L29/786
CPC分类号： H01L23/53219 , C23C14/185 , G02F2001/136295 , H01L27/124 , H01L29/458 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide an Al alloy film for a display device, which exhibits a sufficiently low electric resistivity even when subjected to heat treatment at a low temperature, fully reduces contact resistance when directly connected transparent with a pixel electrode, and has excellent corrosion resistance. SOLUTION: Provided is the Al alloy film for a display device, which is directly connected with a transparent electroconductive film on the substrate of a display device, wherein the Al alloy film contains 0.05-0.5 atm.% Co and 0.2-1.0 atm.% Ge and the contents of Co and Ge satisfy relationship of formula (1): [Ge]≥-0.25×[Co]+0.2 wherein [Ge] is the Ge content (atm.%) in the Al alloy film; and [Co] is the Co content (atm.%) in the Al alloy film. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：为了提供即使在低温下进行热处理时也具有足够低的电阻率的显示装置用Al合金膜，当与像素电极直接连接透明时，完全降低接触电阻，并具有优异的耐腐蚀性。解决方案：提供了一种用于显示装置的Al合金膜，其与显示装置的基板上的透明导电膜直接连接，其中Al合金膜含有0.05-0.5atm％的Co和0.2-1.0 （Ge）≥0.50×[Co] +0.2，其中[Ge]为Al合金膜中的Ge含量（atm。％）。并且[Co]是Al合金膜中的Co含量（atm。％）。版权所有（C）2010，JPO＆INPIT

53. 发明专利

JP2009149997A Sputter target manufacturing method 有权
标题翻译：飞秒瞄准镜制造方法
公开(公告)号：JP2009149997A
公开(公告)日：2009-07-09
申请号：JP2009069802
申请日：2009-03-23
申请人： Toshiba Corp , 株式会社東芝
发明人： ISHIGAMI TAKASHI , WATANABE KOICHI , NITTA AKIHISA , MAKI TOSHIHIRO , YAGI NORIAKI
IPC分类号： C23C14/34 , C22C1/02 , C22C1/04 , C22C21/00 , C22C21/02 , C22F1/00 , C22F1/04 , C23C14/14 , C23C14/16 , G02F1/1362 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L23/498 , H01L23/52 , H01L23/532 , H01L27/01 , H01L29/78 , H01L29/786 , H03H9/145
CPC分类号： H01L21/32051 , C22C21/00 , C23C14/14 , C23C14/165 , C23C14/3414 , G02F2001/136295 , H01L21/2855 , H01L23/53214 , H01L23/53219 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/16152 , H01L2924/181 , H03H9/14538 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a sputter target manufacturing method by which a wiring film of low resistance preventing the occurrence of hillocks, etching residues, and electrochemical reaction with ITO or the like is deposited with excellent reproducibility, and generation of dust during the sputtering is suppressed. SOLUTION: When manufacturing an ingot or a sintered body having the composition consisting of 0.001 to 30 atomic% of at least one kind of a first element selected from Y, Sc, La, Ce, Nd, Sm, Gd, Tb, Dy, Er, Th, Sr, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Co, Ni, Pd, Ir, Pt, Cu, Ag, Au, Cd, Si, Pb and B with the balance comprising substantially Al by the atmosphere melting method, the vacuum melting method, the rapid solidification process, and the powder metallurgy process, C is incorporated into the ingot or sintered body in the range of 20 atomic ppm to 37.8 atomic% to the content of the first element. The obtained ingot or sintered body is worked to manufacture the sputter target. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种溅射靶制造方法，通过该方法，以优异的再现性沉积具有防止发生小丘，蚀刻残留物和与ITO等的电化学反应的低电阻的布线膜，并产生灰尘在溅射期间被抑制。解决方案：当制造具有0.001〜30原子％的选自Y，Sc，La，Ce，Nd，Sm，Gd，Tb中的至少一种第一元素中的至少一种的组成的锭或烧结体时， Dy，Er，Th，Sr，Ti，Zr，V，Nb，Ta，Cr，Mo，W，Mn，Tc，Re，Fe，Co，Ni，Pd，Ir，Pt，Cu，Ag，Au， Si，Pb和B，余量通过气氛熔融法，真空熔融法，快速凝固法和粉末冶金法等，大体为Al，C以20原子ppm〜相对于第一元素的含量为37.8原子％。对获得的锭或烧结体进行加工以制造溅射靶。版权所有（C）2009，JPO＆INPIT

54. 发明专利

JP4160110B2 Device structure and a method of manufacturing the same display device 有权
公开(公告)号：JP4160110B2
公开(公告)日：2008-10-01
申请号：JP2008514993
申请日：2007-10-22
申请人：三井金属鉱業株式会社
发明人：高史久保田 , 宏成占部 , 宜範松浦
IPC分类号： H01L21/3205 , C22C21/00 , C23C14/34 , G02F1/1343 , H01B1/02 , H01L21/285 , H01L23/52 , H01L29/786
CPC分类号： H01L29/458 , C22C21/00 , G02F1/13439 , G02F2001/136295 , H01L23/53219 , H01L29/4908 , H01L2924/0002 , H01L2924/00

55. 发明专利

JP2006330662A Element structure of display device 有权
标题翻译：显示器件的元件结构
公开(公告)号：JP2006330662A
公开(公告)日：2006-12-07
申请号：JP2005302871
申请日：2005-10-18
申请人： Mitsui Mining & Smelting Co Ltd , 三井金属鉱業株式会社
发明人： KUBOTA TAKASHI , MATSUURA YOSHINORI , URABE HIRONARI
IPC分类号： G09F9/30 , G02F1/1343 , G02F1/1345
CPC分类号： H01L23/53219 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide an element structure of a display device with which an element having excellent junction characteristics and a small contact resistance value can be realized as an element having a wiring circuit which is connected directly to a transparent electrode layer and a semiconductor layer and formed of an Al-based alloy film. SOLUTION: Disclosed is the element structure of the display device equipped with the wiring circuit formed of the Al-based alloy film, a semiconductor layer, and a transparent electrode layer, the surface roughness Ra of the Al-based alloy film forming the wiring circuit connected directly to the semiconductor layer and/or transparent electrode layer being 2.0 to 20.0Å. This Al-based alloy film is preferably an Al-Ni based alloy film containing Ni and more preferably an Al-Ni-B based alloy film containing B. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种显示装置的元件结构，可以实现具有优异的结特性和小接触电阻值的元件作为具有直接连接到透明电极层的布线电路的元件以及由Al系合金膜形成的半导体层。解决方案：公开了配备有由Al基合金膜，半导体层和透明电极层形成的布线电路的显示装置的元件结构，Al基合金膜的表面粗糙度Ra 与半导体层和/或透明电极层直接连接的布线电路为2.0〜20.0。该Al系合金膜优选为含有Ni的Al-Ni系合金膜，更优选含有B的Al-Ni-B系合金膜。（C）2007，JPO＆INPIT

56. 发明专利

JP3725266B2 Wiring formation method 失效
公开(公告)号：JP3725266B2
公开(公告)日：2005-12-07
申请号：JP31713996
申请日：1996-11-13
申请人：株式会社半導体エネルギー研究所
发明人：舜平山崎 , 邦彦福地 , 英臣須沢
IPC分类号： H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/336 , H01L21/768 , H01L23/52 , H01L23/532 , H01L29/786
CPC分类号： H01L23/53223 , H01L21/2855 , H01L21/76843 , H01L21/76847 , H01L21/76882 , H01L23/53219 , H01L2924/0002 , Y10S438/933 , H01L2924/00

57. 发明专利

JP2004221098A Semiconductor device and manufacturing method therefor 审中-公开
公开(公告)号：JP2004221098A
公开(公告)日：2004-08-05
申请号：JP2003002946
申请日：2003-01-09
申请人： Renesas Technology Corp , 株式会社ルネサステクノロジ
发明人： MATSUOKA TAKERU , FUJIKI AKIMASA , TAKEWAKA HIROMOTO
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/60 , H01L23/485 , H01L23/532
CPC分类号： H01L24/05 , H01L23/53219 , H01L23/53228 , H01L24/03 , H01L24/45 , H01L24/48 , H01L2224/04042 , H01L2224/05073 , H01L2224/05147 , H01L2224/05166 , H01L2224/05187 , H01L2224/05546 , H01L2224/05556 , H01L2224/05624 , H01L2224/45144 , H01L2224/48463 , H01L2224/48624 , H01L2224/48799 , H01L2224/48824 , H01L2924/00011 , H01L2924/04941 , H01L2924/00014 , H01L2924/01014 , H01L2924/01029 , H01L2924/04953 , H01L2924/00 , H01L2924/00015 , H01L2924/01005 , H01L2924/01004
摘要： PROBLEM TO BE SOLVED: To improve mechanical strength of a part where a pad is formed while complication of a manufacture process is suppressed in a semiconductor device having copper wiring and the aluminum pad. SOLUTION: A second contact 15 and a second copper wiring 16 being wiring of the uppermost layer are embedded in a second interlayer insulating film 14 on a silicon substrate 10. The pad 17 of aluminum alloy (AlCu, AlSiCu and the like, for example) for bonding gold wire 18 is embedded in a prescribed part of second copper wiring 16. COPYRIGHT: (C)2004,JPO&NCIPI

58. 发明专利

JPS59108348A Integrated semiconductor circuit 失效
标题翻译：集成半导体电路
公开(公告)号：JPS59108348A
公开(公告)日：1984-06-22
申请号：JP22400183
申请日：1983-11-28
申请人： Siemens Ag
发明人： FURANTSU FUITSUSHIYAA
IPC分类号： C22C21/00 , H01L21/28 , H01L21/3205 , H01L23/52 , H01L23/532 , H01L29/43
CPC分类号： H01L23/53219 , H01L2924/0002 , Y10T428/12528 , H01L2924/00

59. 发明专利

JP2018163928A 半導体装置の製造方法审中-公开
公开(公告)号：JP2018163928A
公开(公告)日：2018-10-18
申请号：JP2017059095
申请日：2017-03-24
申请人：住友電気工業株式会社 , 住友電工デバイス・イノベーション株式会社
发明人：市川弘之 , 西眞弘
IPC分类号： H01L21/338 , H01L29/778 , H01L29/812 , H01L21/28
CPC分类号： H01L21/76886 , H01L21/28575 , H01L23/53219 , H01L23/53261
摘要：【課題】オーミック電極の端部の荒れを抑制しかつオーミック接触抵抗を低減すること。【解決手段】窒化物半導体層18上にオーミック電極20を形成する工程と、前記窒化物半導体層上に、前記オーミック電極の側面を覆い、前記オーミック電極の上面に開口23を有する第1絶縁膜22を形成する工程と、前記オーミック電極の側面を前記第1絶縁膜が覆いかつ前記第1絶縁膜の開口から前記オーミック電極の上面が露出した状態で前記オーミック電極を熱処理する工程と、を含む半導体装置の製造方法。【選択図】図11

60. 发明专利

JP6151367B2 半導体素子、スパッタリングターゲット材及び半導体装置有权
公开(公告)号：JP6151367B2
公开(公告)日：2017-06-21
申请号：JP2015539204
申请日：2014-09-22
申请人：日本軽金属株式会社 , 富士電機株式会社
发明人：岡田浩 , 白井孝太 , 外薗洋昭 , 塩川国夫
IPC分类号： H01L21/285 , C23C14/34 , C23C14/14 , H01L21/28
CPC分类号： C22C21/00 , C23C14/185 , C23C14/3414 , H01L23/53219 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/73265

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