专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2008108975A Joining structure of element 审中-公开
标题翻译：元件接合结构
公开(公告)号：JP2008108975A
公开(公告)日：2008-05-08
申请号：JP2006291616
申请日：2006-10-26
申请人： Mitsui Mining & Smelting Co Ltd , 三井金属鉱業株式会社
发明人： URABE HIRONARI , MATSUURA YOSHINORI , KUBOTA TAKASHI
IPC分类号： H01L21/3205 , H01L21/28 , H01L21/768 , H01L23/52 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide an element wherein when directly joining a semiconductor layer such as n + -Si and an Al-Ni-based alloy layer, the mutual diffusion of Al and Si can be so prevented as to be able to maintain the ohmic characteristic of the element. SOLUTION: In the element having a semiconductor layer and having an Al-Ni-based alloy layer joined directly to the semiconductor layer, the Al-Ni-based alloy layer joined directly to the semiconductor layer is so formed that the concentration of the nitrogen contained in it is not smaller than 2×10 17 atoms/cm 3 and is smaller than 9×10 21 atoms/cm 3 . Also, the refractive index of the bonding surface side of the Al-Ni-based alloy layer is made preferably not less than 1.9. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种元素，其中当直接接合诸如n -Si和Al-Ni基合金层的半导体层时，Al和Si的相互扩散可以能够保持元件的欧姆特性。解决方案：在具有半导体层并且具有直接连接到半导体层的Al-Ni基合金层的元件中，形成直接连接到半导体层的Al-Ni基合金层，使得浓度其中所含的氮不小于2×10 3原子/ cm 3 / SP，并且小于9×10 21原子/ cm 2， SP> 3 。此外，Al-Ni系合金层的接合面侧的折射率优选为1.9以上。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2007072325A Method for manufacturing display device 审中-公开
标题翻译：制造显示装置的方法
公开(公告)号：JP2007072325A
公开(公告)日：2007-03-22
申请号：JP2005261396
申请日：2005-09-08
申请人： Mitsui Mining & Smelting Co Ltd , 三井金属鉱業株式会社
发明人： KUBOTA TAKASHI , MATSUURA YOSHINORI
IPC分类号： G02F1/1343 , G02F1/1368 , G03F7/42 , H01L21/027 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To provide techniques of manufacturing a display device capable of preventing an increase in a contact resistance or joint failure in a display device having a structure of an aluminum alloy layer and a transparent electrode layer directly joined through a contact hole. SOLUTION: The method for manufacturing a display device includes the steps of forming an insulating layer on an aluminum alloy layer formed on a substrate, coating the insulating layer with a resist, dry etching to form a contact hole, and directly joining the transparent electrode layer with the aluminum alloy layer through the contact hole, wherein a stripping liquid used to strip the resist is a nonaqueous solution and the nonaqueous solution contains a polar solvent and/or an organic amine. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种能够防止在具有通过接触直接接合的铝合金层和透明电极层的结构的显示装置中的接触电阻或接合故障增加的显示装置的制造技术孔。解决方案：显示装置的制造方法包括以下步骤：在形成在基板上的铝合金层上形成绝缘层，用抗蚀剂涂覆绝缘层，干蚀刻以形成接触孔，并直接接合透明电极层与铝合金层通过接触孔，其中用于剥离抗蚀剂的剥离液是非水溶液，非水溶液含有极性溶剂和/或有机胺。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2005228656A High heat-resistant aluminum alloy wiring material and target material 有权
标题翻译：高耐热铝合金材料和目标材料
公开(公告)号：JP2005228656A
公开(公告)日：2005-08-25
申请号：JP2004037570
申请日：2004-02-16
申请人： Mitsui Mining & Smelting Co Ltd , 三井金属鉱業株式会社
发明人： KUBOTA TAKASHI , MATSUURA YOSHINORI , MATSUZAKI KENJI , KATO KAZUTERU
IPC分类号： H05K1/09 , C22C21/00 , C23C14/34 , H01B1/02 , H01L21/28 , H01L21/283 , H01L21/285 , H01L21/3205 , H01L23/52 , H01L23/532 , H01L29/78 , H01L29/786
CPC分类号： C23C14/3414 , C22C21/00 , H01B1/023 , H01L21/283 , H01L23/53219 , H01L2924/0002 , H05K1/09 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide an aluminum alloy wiring material and a target material suitable for a poly-Si type TFT of low temperature process, to which a high temperature treatment of 500°C or higher is applied, excellent in high heat resistance and a low resistance property. SOLUTION: On the aluminum alloy wiring material and the target containing nickel, cobalt, and carbon, relations: 0.5at%≤X≤3.0at%, 4.0at%≤X+Y≤7.0at%, and 0.1at%≤Z≤0.5at% are fulfilled, and the rest is aluminum, wherein, an atom percentage of a nickel content is Xat%, an atom percentage of a cobalt content is Yat%, and an atom percentage of a carbon content is Zat%. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供适用于500℃以上的高温处理的低温工艺的多晶硅型TFT的铝合金配线材料和靶材料，优异的高耐热性和低电阻性。
解决方案：在铝合金布线材料和含有镍，钴和碳的靶材上，关系为：0.5at％≤X≤3.0at％，4.0at％≤X+Y≤7.0at％，0.1at％ ≤Z≤0.5at％，其余为铝，其中镍含量的原子百分比为Xat％，钴含量的原子百分比为Yat％，碳含量的原子百分比为Zat％。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2010186728A Organic el element 审中-公开
标题翻译：有机EL元素
公开(公告)号：JP2010186728A
公开(公告)日：2010-08-26
申请号：JP2009083925
申请日：2009-03-31
申请人： Mitsui Mining & Smelting Co Ltd , 三井金属鉱業株式会社
发明人： MATSUURA YOSHINORI , KAWAI NOBUYUKI , KUBOTA TAKASHI
IPC分类号： H05B33/24 , H01L51/50 , H05B33/06 , H05B33/12 , H05B33/28
摘要： PROBLEM TO BE SOLVED: To provide a technology enabling simplification of a manufacturing process of an organic EL element by unifying a metal material at each configuration regarding the organic EL element having a planarizing film and an electric field light-emitting layer made of an organic resin, and a reflective film and a semi-transmissive film.
SOLUTION: In the organic EL element having the planarizing film 50 and the electric field light-emitting layer 40 made of the organic resin, the reflective film 60 and the semi-transmissive film 30, all of the reflective film 60, the semi-transmissive film 30, and auxiliary wiring 70 connected to the semi-transmissive film are formed of a Al-Ni base alloy.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够简化有机EL元件的制造工艺的技术，通过在关于具有平坦化膜的有机EL元件和由有机树脂，反射膜和半透膜。解决方案：在具有由有机树脂制成的平坦化膜50和电场发光层40的有机EL元件中，反射膜60和半透膜30，所有的反射膜60，半透射膜30和与半透射膜连接的辅助布线70由Al-Ni基合金形成。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2008078243A Bonding structure of element 审中-公开
标题翻译：元素的结合结构
公开(公告)号：JP2008078243A
公开(公告)日：2008-04-03
申请号：JP2006253488
申请日：2006-09-19
申请人： Mitsui Mining & Smelting Co Ltd , 三井金属鉱業株式会社
发明人： MATSUURA YOSHINORI , KUBOTA TAKASHI
IPC分类号： H01L21/3205 , C22C21/00 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing technology with which damage such as erosion to a wiring circuit is suppressed as much as possible on an element where the wiring circuit formed of Al-based alloy is directly bonded to a transparent electrode and the highly reliable element is achieved.
SOLUTION: In a bonding structure of having a transparent electrode and a wiring circuit formed of Al-based alloy which is directly bonded to the transparent electrode, a taper angle of a wiring circuit side is 20°to 75°. It is desirable that Al-based alloy is Al-Ni-based alloy and it is much more desirable that it is Al-Ni-B alloy.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造技术，其中尽可能地将由Al基合金形成的布线电路直接接合到透明电极的元件上尽可能地抑制诸如对布线电路的侵蚀的损坏，以及实现了高度可靠的元件。解决方案：在具有透明电极和直接接合到透明电极的Al基合金形成的布线电路的接合结构中，布线电路侧的锥角为20°至75°。 Al基合金优选为Al-Ni系合金，更优选为Al-Ni-B系合金。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2015041566A 有機半導体デバイス审中-公开
标题翻译：有机半导体器件
公开(公告)号：JP2015041566A
公开(公告)日：2015-03-02
申请号：JP2013173045
申请日：2013-08-23
申请人：三井金属鉱業株式会社 , Mitsui Mining & Smelting Co Ltd
发明人： MATSUURA YOSHINORI
IPC分类号： H05B33/02 , H01L51/50 , H05B33/04 , H05B33/24 , H05B33/26
CPC分类号： H01L51/5253 , H01L51/0037 , H01L51/0097 , H01L51/5203 , H01L2251/5338 , Y02E10/549
摘要：【課題】層間絶縁膜を有しない簡略化された構成の有機半導体デバイスを提供する。【解決手段】少なくとも金属箔を含んでなる電極箔と、電極箔の表面に部分的に設けられる有機半導体層と、有機半導体層上に設けられる上部電極層と、電極箔、有機半導体層及び上部電極層上に設けられ、電極箔、有機半導体層及び上部電極層の露出部分を覆う封止層と、封止層を貫通するように設けられ、上部電極層との電気的接続を可能にする少なくとも1つのコンタクトホールとを備えてなる、有機半導体デバイス。【選択図】図1
摘要翻译：要解决的问题：提供一种没有层间绝缘膜的简化结构的有机半导体器件。解决方案：一种有机半导体器件包括：至少包括金属箔的电极箔; 部分地设置在电极箔的表面上的有机半导体层; 设置在有机半导体层上的上电极层; 设置在电极箔，有机半导体层和上电极层上的封装层，覆盖电极箔，有机半导体层和上电极层的暴露部分; 以及设置成穿过封装层的至少一个接触孔，并且能够与上电极层电连接。

7. 发明专利

JP2013157325A Electrode foil and organic device 有权
标题翻译：电极箔和有机器件
公开(公告)号：JP2013157325A
公开(公告)日：2013-08-15
申请号：JP2013035556
申请日：2013-02-26
申请人： Mitsui Mining & Smelting Co Ltd , 三井金属鉱業株式会社
发明人： MATSUURA YOSHINORI , KITAJIMA NOZOMI , ABE NAOHIKO
IPC分类号： H05B33/26 , H01L51/42 , H01L51/50 , H05B33/02 , H05B33/24 , H05B33/28
CPC分类号： H01L51/441 , H01B1/026 , H01L27/288 , H01L51/44 , H01L51/5218 , H01L51/5231 , H01L51/529 , H05B33/26 , Y02E10/549 , Y02P70/521 , Y10T428/12438 , Y10T428/12986
摘要： PROBLEM TO BE SOLVED: To provide an electrode foil which is provided with both functions as a support substrate and a reflection electrode and in which heat conductivity is improved, and an organic device employing the same.SOLUTION: An electrode foil 10 is provided which comprises a metal foil 12, a reflection layer 13 provided directly on the metal foil 12, and a buffer layer 14 provided directly on the reflection layer 13.
摘要翻译：要解决的问题：提供一种电极箔，其具有作为支撑基板和反射电极两者的功能，并且其导热性得到改善，以及使用该电极箔的有机装置。提供了一种电极箔10，其包括金属箔12，直接设置在金属箔12上的反射层13和直接设置在反射层13上的缓冲层14。

8. 发明专利

JP2010236023A Al-Ni ALLOY WIRING MATERIAL AND DEVICE STRUCTURE USING THE SAME 审中-公开
标题翻译： Al-Ni合金材料和使用其的器件结构
公开(公告)号：JP2010236023A
公开(公告)日：2010-10-21
申请号：JP2009085484
申请日：2009-03-31
申请人： Mitsui Mining & Smelting Co Ltd , Samsung Electronics Co Ltd , 三井金属鉱業株式会社 , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： TOKUCHI NARINORI , FUDA RYUMA , MATSUURA YOSHINORI , KUBOTA TAKASHI , KIM BYEONG-BEOM , JEONG CHANGOH , BAE YANGHO , YUN PIL SANG
IPC分类号： C22C21/00 , G02F1/1343 , G09F9/30 , H01B1/02 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L29/417 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide an Al-Ni alloy wiring material which can directly make contact with a transparent electrode layer of ITO (Indium Tin Oxide) or the like, has superior corrosion resistance against a developer and superior corrosion resistance in the formation of a contact hole, and allows devices to have constant contact resistance values even though the devices are formed within a surface of a glass substrate having a large area.
SOLUTION: In the Al-Ni alloy wiring material containing nickel in aluminum, cerium and boron are contained. When the atomic percentage of nickel for nickel content is defined as Xat%, the atomic percentage of cerium for cerium content is defined as Yat% and the atomic percentage of boron for boron content is defined as Zat%, respective concentrations are within the range of regions satisfying respective inequalities 0.5≤X≤5.0, 0.01≤Y≤1.0 and 0.01≤Z≤1.0.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供可以直接与ITO（氧化铟锡）等的透明电极层接触的Al-Ni合金布线材料，对显影剂具有优异的耐腐蚀性和优异的耐腐蚀性形成接触孔，并且即使在具有大面积的玻璃基板的表面内形成器件，也允许器件具有恒定的接触电阻值。解决方案：在含有铝中的镍的Al-Ni合金布线材料中，含有铈和硼。当镍含量的原子百分比定义为Xat％时，铈含量的铈的原子百分比定义为Yat％，硼含量的硼原子百分比定义为Zat％，各自的浓度均在满足各不等式0.5≤X≤5.0,0.01≤Y≤1.0和0.01≤Z≤1.0的区域。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2007186779A Al-Ni-B ALLOY WIRING MATERIAL, AND ELEMENT STRUCTURE USING THE SAME 审中-公开
标题翻译： Al-Ni-B合金材料及其元件结构
公开(公告)号：JP2007186779A
公开(公告)日：2007-07-26
申请号：JP2006230512
申请日：2006-08-28
申请人： Mitsui Mining & Smelting Co Ltd , 三井金属鉱業株式会社
发明人： URABE HIRONARI , MATSUURA YOSHINORI , KUBOTA TAKASHI
IPC分类号： C22C21/00 , C22F1/00 , C22F1/04 , H01B1/02 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L23/52
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide an Al-based alloy wiring material which, in a display device comprising a thin-film transistor and a transparent electrode layer, can be bonded directly to a transparent electrode layer such as ITO and IZO and also can be bonded directly to a semiconductor layer such as n + -Si. SOLUTION: The Al-Ni-B alloy wiring material has a composition in which the nickel content and the boron content are within the ranges satisfying inequalities 0.5≤X≤10.0, 0.05≤Y≤11.0, Y+0.25X≥1.0 and Y+1.15X≤11.5 (wherein X represents the content of nickel in atomic percentage (at%) and Y represents the content of boron in atomic percentage (at%)) and the balance is composed of aluminum. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种Al系合金配线材料，其在包括薄膜晶体管和透明电极层的显示装置中可以直接接合到诸如ITO和IZO的透明电极层，以及也可以直接键合到半导体层，例如n + SP-Si。解决方案：Al-Ni-B合金布线材料具有镍含量和硼含量在满足不等式0.5≤X≤10.0,0.05≤Y≤11.0，Y +0.25X≥1.0的范围内的组成和Y +1.15X≤11.5（其中X表示原子百分比中的镍含量（原子％），Y表示原子百分比中的硼含量（原子％）），余量由铝构成。版权所有（C）2007，JPO＆INPIT

10. 发明专利

JP2007142356A Al-ni-b alloy wiring material and device structure using the same 有权
标题翻译： AL-NI-B合金材料和使用该材料的装置结构
公开(公告)号：JP2007142356A
公开(公告)日：2007-06-07
申请号：JP2006093701
申请日：2006-03-30
申请人： Mitsui Mining & Smelting Co Ltd , 三井金属鉱業株式会社
发明人： URABE HIRONARI , MATSUURA YOSHINORI , KUBOTA TAKASHI
IPC分类号： H01L21/3205 , C22C21/00 , G02F1/1343 , H01L21/28 , H01L21/285 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide an Al-based alloy wiring material which can be directly bonded not only with a transparent electrode layer such as ITO and IZO but also with a semiconductor layer such as n
+ -Si in a display device comprising a thin film transistor and a transparent electrode layer.
SOLUTION: In the Al-Ni-B alloy wiring material, the nickel content and the boron content are within the ranges satisfying the following formulates: 0.5≤X≤10.0, 0.05≤Y≤11.0, Y+0.25X≥1.0, and Y+1.15X≤11.5 when the atomic percentage of the nickel content is expressed as Xat% and the atomic percentage of the boron content is expressed as Yat%, and the remainder is composed of aluminum.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种Al基合金布线材料，其不仅可以与ITO和IZO等透明电极层直接接合，而且还可以与半导体层例如n + SP 包括薄膜晶体管和透明电极层的显示装置中的-Si。解决方案：在Al-Ni-B合金布线材料中，镍含量和硼含量在满足以下配方的范围内：0.5≤X≤10.0,0.05≤Y≤11.0，Y +0.25X≥1.0 ，当镍含量的原子百分比表示为Xat％，硼含量的原子百分比表示为Yat％，余量由铝构成时，Y +1.15X≤11.5。版权所有（C）2007，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式