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1. 发明专利

JP2011081965A Target for x-ray tube, manufacturing method of the target, x-ray tube using the target, and x-ray inspection device 有权
标题翻译： X射线管的目标，目标的制造方法，使用目标的X射线管和X射线检查装置
公开(公告)号：JP2011081965A
公开(公告)日：2011-04-21
申请号：JP2009231818
申请日：2009-10-05
申请人： Toshiba Corp , Toshiba Materials Co Ltd , 東芝マテリアル株式会社 , 株式会社東芝
发明人： YAMAMOTO SHINICHI , NITTA AKIHISA , HORIE HIROMICHI
IPC分类号： H01J35/10
摘要： PROBLEM TO BE SOLVED: To provide a target for an X-ray tube made by jointing a metal base material and a carbon material in which a jointing face separation and a breakdown of the carbon material due to a thermal expansion difference between the metal base material and the carbon material are suppressed with excellent reproducibility.
SOLUTION: The target 1 for the X-ray tube is provided with a disk-shape metal base material 2 made of Mo or Mo alloy, an X-ray irradiating portion 3 arranged on an electron beam irradiating face 2a of the metal base material 2, and a cylindrical carbon material 4 jointed on a face 2b of the metal base material 2 opposite to the electron beam irradiating face 2a with a jointing layer interposed. The carbon material 4 is divided into a plurality of cylindrical portions 6A, 6B of a concentric circular shape.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种通过将金属基材和碳材料接合而制成的X射线管的靶，其中，由于碳材料的接合面分离和碳材料的分解而导致的热膨胀差异金属基材和碳材料被抑制，具有优异的再现性。解决方案：X射线管的靶1设置有由Mo或Mo合金制成的盘状金属基材2，配置在金属的电子束照射面2a上的X射线照射部3 基材2以及与金属基材2的与电子束照射面2a相对的面2b上连接有连接层的圆筒形碳材料4。碳材料4被分成多个同心圆形的圆筒部分6A，6B。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2010031378A Method of manufacturing sputter target 有权
标题翻译：制造突变目标的方法
公开(公告)号：JP2010031378A
公开(公告)日：2010-02-12
申请号：JP2009245733
申请日：2009-10-26
申请人： Toshiba Corp , 株式会社東芝
发明人： ISHIGAMI TAKASHI , WATANABE KOICHI , NITTA AKIHISA , MAKI TOSHIHIRO , YAGI NORIAKI
IPC分类号： C23C14/34 , C22C21/00 , C22F1/00 , C22F1/04 , C23C14/14 , C23C14/16 , G02F1/1362 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L23/498 , H01L23/52 , H01L23/532 , H01L27/01 , H01L29/78 , H01L29/786 , H03H9/145
CPC分类号： H01L21/32051 , C22C21/00 , C23C14/14 , C23C14/165 , C23C14/3414 , G02F2001/136295 , H01L21/2855 , H01L23/53214 , H01L23/53219 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/16152 , H01L2924/181 , H03H9/14538 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a sputter target by which a wiring film of low resistance preventing the occurrence of hillocks, etching residues, and electrochemical reaction with ITO or the like is deposited with excellent reproducibility, and generation of dust during the sputtering is suppressed. SOLUTION: When manufacturing the sputter target comprising 0.001 to 30 at% of at least one of a first element selected from Y, Sc, La, Ce, Nd, Sm, Gd, Tb, Dy and Er and comprising C as a second element in 1.8 to 1,630 atm ppm to the first element, with the balance comprising substantially Al, an ingot in which an intermetallic compound of the first element and Al is uniformly dispersed is manufactured by the rapid cooling solidification process after melting Al with the first element mixed therein. The ingot is hot-worked or cold-worked and is machined to manufacture the sputter target. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造溅射靶的方法，通过该方法，以优异的再现性沉积具有防止发生小丘，蚀刻残留物和与ITO等的电化学反应的低电阻的布线膜，并且产生溅射时的灰尘被抑制。解决方案：当制造包括0.001至30at％的选自Y，Sc，La，Ce，Nd，Sm，Gd，Tb，Dy和Er中的至少一种的溅射靶时，包括C作为第二元素为1.8至1,630atm ppm，其余量基本上为Al，通过快速冷却固化工艺制备其中第一元素和Al的金属间化合物均匀分散的锭，其中第一元素元素混合。锭被热加工或冷加工，并被加工成制造溅射靶。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2009149997A Sputter target manufacturing method 有权
标题翻译：飞秒瞄准镜制造方法
公开(公告)号：JP2009149997A
公开(公告)日：2009-07-09
申请号：JP2009069802
申请日：2009-03-23
申请人： Toshiba Corp , 株式会社東芝
发明人： ISHIGAMI TAKASHI , WATANABE KOICHI , NITTA AKIHISA , MAKI TOSHIHIRO , YAGI NORIAKI
IPC分类号： C23C14/34 , C22C1/02 , C22C1/04 , C22C21/00 , C22C21/02 , C22F1/00 , C22F1/04 , C23C14/14 , C23C14/16 , G02F1/1362 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L23/498 , H01L23/52 , H01L23/532 , H01L27/01 , H01L29/78 , H01L29/786 , H03H9/145
CPC分类号： H01L21/32051 , C22C21/00 , C23C14/14 , C23C14/165 , C23C14/3414 , G02F2001/136295 , H01L21/2855 , H01L23/53214 , H01L23/53219 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/16152 , H01L2924/181 , H03H9/14538 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a sputter target manufacturing method by which a wiring film of low resistance preventing the occurrence of hillocks, etching residues, and electrochemical reaction with ITO or the like is deposited with excellent reproducibility, and generation of dust during the sputtering is suppressed. SOLUTION: When manufacturing an ingot or a sintered body having the composition consisting of 0.001 to 30 atomic% of at least one kind of a first element selected from Y, Sc, La, Ce, Nd, Sm, Gd, Tb, Dy, Er, Th, Sr, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Co, Ni, Pd, Ir, Pt, Cu, Ag, Au, Cd, Si, Pb and B with the balance comprising substantially Al by the atmosphere melting method, the vacuum melting method, the rapid solidification process, and the powder metallurgy process, C is incorporated into the ingot or sintered body in the range of 20 atomic ppm to 37.8 atomic% to the content of the first element. The obtained ingot or sintered body is worked to manufacture the sputter target. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种溅射靶制造方法，通过该方法，以优异的再现性沉积具有防止发生小丘，蚀刻残留物和与ITO等的电化学反应的低电阻的布线膜，并产生灰尘在溅射期间被抑制。解决方案：当制造具有0.001〜30原子％的选自Y，Sc，La，Ce，Nd，Sm，Gd，Tb中的至少一种第一元素中的至少一种的组成的锭或烧结体时， Dy，Er，Th，Sr，Ti，Zr，V，Nb，Ta，Cr，Mo，W，Mn，Tc，Re，Fe，Co，Ni，Pd，Ir，Pt，Cu，Ag，Au， Si，Pb和B，余量通过气氛熔融法，真空熔融法，快速凝固法和粉末冶金法等，大体为Al，C以20原子ppm〜相对于第一元素的含量为37.8原子％。对获得的锭或烧结体进行加工以制造溅射靶。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2006205354A Sintered material for cutting tool, and cutting tool using the same material 有权
标题翻译：用于切割工具的烧结材料和使用相同材料的切割工具
公开(公告)号：JP2006205354A
公开(公告)日：2006-08-10
申请号：JP2006076200
申请日：2006-03-20
申请人： Toshiba Corp , 株式会社東芝
发明人： NITTA AKIHISA , AOYAMA HITOSHI , YAMAGUCHI SATORU , NAKANO YOSHIYO
IPC分类号： B23B27/14 , C01B32/949
摘要： PROBLEM TO BE SOLVED: To provide sintered material for a cutting tool comprising sintered material of tungsten carbide having excellent material handling performance, and excellent characteristics, and a cutting tool using the sintered material.
SOLUTION: The cutting tool is provided with the sintered material of tungsten carbide comprising sintered matter of tungsten carbide powder, in which primary particle diameter is 0.6 μm or less, and secondary particles in a range of secondary particle diameter of 0.6 μm or over and 35 μm or less occupy 70 wt% or more of the whole particles.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种包括具有优良材料处理性能和优异特性的碳化钨烧结材料的切削工具烧结材料和使用该烧结材料的切削工具。解决方案：切削工具设置有碳化钨的烧结材料，其包含一次粒径为0.6μm以下的碳化钨粉末烧结体，二次粒径为0.6μm的二次粒子，以上且35μm以下占全体颗粒的70重量％以上。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2006176405A Method for manufacturing tungsten carbide powder 有权
标题翻译：制造碳化钨粉的方法
公开(公告)号：JP2006176405A
公开(公告)日：2006-07-06
申请号：JP2006076199
申请日：2006-03-20
申请人： Toshiba Corp , 株式会社東芝
发明人： NITTA AKIHISA , AOYAMA HITOSHI , YAMAGUCHI SATORU , NAKANO YOSHIYO
IPC分类号： C01B32/949 , B23B27/14
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing tungsten carbide powder, which reproducibly and easily manufactures the tungsten carbide powder that has excellent handleability as a raw material for a cutting tool material, and the like, and that improves the characteristics of a cutting tool material and the like.
SOLUTION: The method for manufacturing tungsten carbide powder is provided with a step, where tungstic trioxide powder and carbon powder, which has a primary particle diameter of ≤0.1 μm and includes secondary particles with particle diameters of 5-10 μm, are mixed. Further, the method has a step, where the tungstic trioxide powder is reduced by heating the mixed powder in a hydrogen atmosphere, and a step, where the tungsten-carbide powder is manufactured by heating, in vacuum or in a non-oxidizing atmosphere, the mixed powder subjected to the reduction step.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：提供一种制造碳化钨粉末的方法，其可重复地且容易地制造具有优异的可操作性的碳化钨粉末作为切削工具材料的原料等，并且改善了特性的切削工具材料等。解决方案：制造碳化钨粉末的方法具有以下步骤：其中一次粒径≤0.1μm的三氧化钨粉末和碳粉末包括粒径为5-10μm的二次粒子，混合。此外，该方法具有通过在氢气气氛中加热混合粉末来还原三氧化钨粉末的步骤，以及在真空或非氧化气氛中通过加热制造碳化钨粉末的步骤，经过还原步骤的混合粉末。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2007211348A Cu-Cr ALLOY POWDER AND CONTACT MATERIAL FOR VACUUM CIRCUIT BREAKER USING THE SAME 有权
标题翻译： Cu-Cr合金粉末和接触材料使用真空断路器
公开(公告)号：JP2007211348A
公开(公告)日：2007-08-23
申请号：JP2007068013
申请日：2007-03-16
申请人： Toshiba Corp , 株式会社東芝
发明人： MINAMI YOSHIKO , NITTA AKIHISA , KOBAYASHI KUNPEI , OKAMURA MASAMI , HORIE HIROMICHI
IPC分类号： B22F1/00 , B22F9/08 , B22F9/10 , B22F9/14 , C22C1/04 , C22C9/00 , C22C27/06 , H01H33/66
摘要： PROBLEM TO BE SOLVED: To provide a contact material for a vacuum circuit breaker having a low impurity content, further having reduced hardness by the reduction of the solid solution concentration of Cr solid-soluted into a Cu phase, so as to improve its formability and to be easily mass-produced, to provide a method for producing the same, and to provide a vacuum circuit breaker.
SOLUTION: In the Cu-Cr alloy powder obtained by melting and dispersing a Cu-Cr material composed of Cu as a highly electrically conductive component and Cr as an arc resistant component and further rapidly cooling the same, the solid solution concentration of Cr in the Cu phase is ≤200 ppm. The alloy powder is suitably used as the constituting material of a contact for a vacuum circuit breaker.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供具有低杂质含量的真空断路器的接触材料，通过将固溶于Cu相的Cr的固溶浓度降低而进一步降低硬度，从而改善其成形性和容易批量生产，以提供其制造方法，并提供真空断路器。解决方案：在将由Cu作为高导电性组分构成的Cu-Cr材料熔融分散而得到的Cu-Cr合金粉末中，Cr作为耐电弧成分，进一步快速冷却， Cu相中的Cr≤200ppm。合金粉末适合用作真空断路器的接点的构成材料。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2006111969A Sputter target manufacturing method 有权
标题翻译：飞秒瞄准镜制造方法
公开(公告)号：JP2006111969A
公开(公告)日：2006-04-27
申请号：JP2005276818
申请日：2005-09-22
申请人： Toshiba Corp , 株式会社東芝
发明人： ISHIGAMI TAKASHI , WATANABE KOICHI , NITTA AKIHISA , MAKI TOSHIHIRO , YAGI NORIAKI
IPC分类号： C23C14/34 , B22D21/04 , B22D23/00 , B22F3/115 , C22C1/04 , C22C21/00 , C23C14/14 , C23C14/16 , G02F1/1362 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L23/498 , H01L23/52 , H01L23/532 , H01L27/01 , H01L29/78 , H01L29/786 , H03H9/145
CPC分类号： H01L21/32051 , C22C21/00 , C23C14/14 , C23C14/165 , C23C14/3414 , G02F2001/136295 , H01L21/2855 , H01L23/53214 , H01L23/53219 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/16152 , H01L2924/181 , H03H9/14538 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a sputter target manufacturing method by which a wiring film of low resistance preventing the occurrence of hillocks, etching residues, and electrochemical reaction with ITO or the like is deposited with excellent reproducibility, and generation of dust during the sputtering is suppressed. SOLUTION: When manufacturing an ingot or a sintered body having the composition consisting of 0.001 to 30 at % of at least one kind of a first element selected from Y, Sc, La, Ce, Nd, Sm, Gd, Tb, Dy, Er, Th, Sr, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Co, Ni, Pd, Ir, Pt, Cu, Ag, Au, Cd, Si, Pb and B with the balance comprising substantially Al by the atmosphere melting method, the vacuum melting method, the rapid solidification process, and the powder metallurgy process, gas containing at least one kind of a second element selected from O, N and H is used. The obtained ingot or sintered body is worked to manufacture the sputter target. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种溅射靶制造方法，通过该方法，以优异的再现性沉积具有防止发生小丘，蚀刻残留物和与ITO等的电化学反应的低电阻的布线膜，并产生灰尘在溅射期间被抑制。解决方案：当制造具有由选自Y，Sc，La，Ce，Nd，Sm，Gd，Tb中的至少一种第一元素的0.001至30原子％的组成的锭或烧结体时， Dy，Er，Th，Sr，Ti，Zr，V，Nb，Ta，Cr，Mo，W，Mn，Tc，Re，Fe，Co，Ni，Pd，Ir，Pt，Cu，Ag，Au， Si，Pb和B，余量通过气氛熔融法，真空熔炼法，快速凝固法和粉末冶金法包含基本上Al，含有选自O，N和H中的至少一种第二元素的气体用来。对获得的锭或烧结体进行加工以制造溅射靶。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2008071424A Sputtering target, interface film for phase change optical recording medium using same, manufacturing method thereof, and phase change optical recording medium 审中-公开
标题翻译：用于相位变化的光学记录介质的接触膜，其制造方法和相变光学记录介质
公开(公告)号：JP2008071424A
公开(公告)日：2008-03-27
申请号：JP2006249554
申请日：2006-09-14
申请人： Toshiba Corp , Toshiba Materials Co Ltd , 東芝マテリアル株式会社 , 株式会社東芝
发明人： SAKAMOTO TOSHIYA , KOSAKA YASUO , NITTA AKIHISA
IPC分类号： G11B7/26 , G11B7/254 , G11B7/257
摘要： PROBLEM TO BE SOLVED: To enable deposition of metal compound which has crystallization promoting function, optical characteristic, and adhesion to a recording medium for a sputtering target used for deposition of interface film of phase change recording medium. SOLUTION: The sputtering target has such a composition as described ((M 1-a Si a ) 1-b Cr b )(O 1-x N x ) z (in the equation, M means at least one element chosen from Zr and Hf, and a, b, x, and z are numbers which meet the following equations: 0.1≤a≤0.6, 0.1≤b≤0.5, 0 COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了能够沉积具有结晶促进功能，光学特性和对用于沉积相变记录介质的界面膜的溅射靶的记录介质的粘附性的金属化合物。解决方案：溅射靶具有如下所述的组成：（（M 1-a Si a ） 1-b （b），（b），（b），（b），（b），（b），（b） Zr和Hf，a，b，x和z是满足下列等式的数：0.1≤a≤0.6,0.1≤b≤0.5,0

9. 发明专利

JP2006100822A Method for manufacturing liquid crystal display 有权
标题翻译：制造液晶显示方法
公开(公告)号：JP2006100822A
公开(公告)日：2006-04-13
申请号：JP2005276820
申请日：2005-09-22
申请人： Toshiba Corp , 株式会社東芝
发明人： ISHIGAMI TAKASHI , WATANABE KOICHI , NITTA AKIHISA , MAKI TOSHIHIRO , YAGI NORIAKI
IPC分类号： C23C14/34 , H01L21/285 , C22C1/02 , C22C21/00 , C23C14/14 , C23C14/16 , G02F1/1345 , G02F1/1362 , H01L21/28 , H01L21/3205 , H01L21/768 , H01L23/498 , H01L23/52 , H01L23/532 , H01L27/01 , H01L29/78 , H01L29/786 , H03H9/145
CPC分类号： H01L21/32051 , C22C21/00 , C23C14/14 , C23C14/165 , C23C14/3414 , G02F2001/136295 , H01L21/2855 , H01L23/53214 , H01L23/53219 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/16152 , H01L2924/181 , H03H9/14538 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To prevent electro-chemical reactions with hillock, etching residues, ITO, and the like, and control dust occurrence at sputtering time, when manufacturing low-resistance wiring for a liquid crystal display. SOLUTION: In manufacturing a liquid crystal display having Al alloy wiring, when producing an ingot or sintered compact, which contains 0.001 to 30 atom% of a primary element selected from among Y, Sc, La, Ce, Nd, Sm, Gd, Tb, Dy, Er, Th, Sr, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Co, Ni, Pd, Ir, Pt, Cu, Ag, Au, Cd, Si, Pb, and B, and the rest that is practically made up of Al, by using an air solution process, a vacuum fusion method, a rapid solidification method, or powder-metallurgy processing, a gas is used that includes a secondary element selected from O, N, and H, and an obtained ingot or sintered compact is processed to produce a sputter target. An etching treatment is performed on the Al alloy film formed by sputtering this sputter target, thus forming Al alloy wiring. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：制造液晶显示器的低电阻布线时，为了防止与小丘，蚀刻残留物，ITO等的电化学反应，并且在溅射时控制粉尘的发生。解决方案：在制造具有Al合金布线的液晶显示器时，当制造含有选自Y，Sc，La，Ce，Nd，Sm中的0.001〜30原子％的一次元素的锭或烧结体时， Gd，Tb，Dy，Er，Th，Sr，Ti，Zr，V，Nb，Ta，Cr，Mo，W，Mn，Tc，Re，Fe，Co，Ni，Pd，Ir，Pt，Cu， Au，Cd，Si，Pb和B，其余实际上由Al组成，通过使用空气溶液法，真空熔融法，快速凝固法或粉末冶金加工，使用气体包括选自O，N和H的次要元素，并且将所获得的锭或烧结体进行处理以产生溅射靶。对通过溅射该溅射靶形成的Al合金膜进行蚀刻处理，从而形成Al合金布线。版权所有（C）2006，JPO＆NCIPI

10. 发明专利

JP2010140879A Target of x-ray tube, x-ray tube using the same, x-ray inspection system, and manufacturing method for the target of x-ray tube 审中-公开
标题翻译： X射线管，X射线管，X射线检测系统目标，X射线管目标的制造方法
公开(公告)号：JP2010140879A
公开(公告)日：2010-06-24
申请号：JP2008318851
申请日：2008-12-15
申请人： Toshiba Corp , Toshiba Materials Co Ltd , 東芝マテリアル株式会社 , 株式会社東芝
发明人： NITTA AKIHISA , YAMAMOTO SHINICHI , HORIE HIROMICHI
IPC分类号： H01J35/10 , G01N23/04
摘要： PROBLEM TO BE SOLVED: To provide a target of an X-ray tube which excels in high-temperature strength and can attain cost reduction, and to provide a manufacturing method for the tube.
SOLUTION: In the target of an X-ray tube where a graphite base material and a Mo base material or a Mo alloy base material are jointed with each other via a connection layer, when a composition ratio of the connection layer by an EPMA is detected, the connection layer has a diffusion phase of MoTaTi, a TaTi alloy phase, a Ta-rich phase, and a ZrTa alloy phase. Additionally, it is preferable that the diffusion phase of MoTaTi have a solid solution of MoTaTi.
COPYRIGHT: (C)2010,JPO&INPIT

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