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51. 发明专利

JP2006336079A Copper strike plating method 有权
标题翻译：铜压铸方法
公开(公告)号：JP2006336079A
公开(公告)日：2006-12-14
申请号：JP2005163068
申请日：2005-06-02
申请人： Shinko Electric Ind Co Ltd , 新光電気工業株式会社
发明人： OGIWARA YOKO
IPC分类号： C25D5/18 , C25D7/12 , H01L23/50
CPC分类号： C25D5/34 , C25D5/18 , H01L23/49582 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a copper strike plating method by which a pretreatment step is reduced to the utmost in the application of copper striking plating on a heat-treated base material comprising a copper alloy and a copper strike plated layer satisfactory in adhesion strength to the base material and heat resistance is obtained.
SOLUTION: In the application of the copper strike plating on the heat-treated surface of the base material comprising the copper alloy after the surface is degreased and electrolytically activated, a pulse current developing a current pulse like only on an electrode side on which metal copper is deposited on the surface of the base material is applied so that the crystal surface exhibiting the maximum value of the reflection intensity of X-ray diffraction of the copper strike plated layer formed on the surface of the base material is the (111) face of the crystal surface exhibiting the maximum value of the refection intensity of the X-ray diffraction of a cooper layer formed by finely packing a metal crystal comprising copper in the copper strike plating.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种铜触击电镀方法，其中在对铜合金和铜击穿镀层进行热处理的基材上应用铜击打时，预处理步骤最大程度地降低，令人满意获得与基材的粘合强度和耐热性。解决方案：在表面脱脂并电解激活后，在包含铜合金的基体材料的热处理表面上应用铜触击电镀时，仅在电极侧形成电流脉冲的脉冲电流施加在基材表面上沉积金属铜，使得形成在基材表面上的铜触镀层的X射线衍射的反射强度的最大值的晶体表面为（111 ）表面表现出通过在铜触击镀层中精细堆积包括铜的金属晶体而形成的铜层的X射线衍射的反射强度的最大值。版权所有（C）2007，JPO＆INPIT

52. 发明专利

JP2006214006A Process and apparatus for electrochemical treatment of piece in passing equipment 审中-公开
标题翻译：电气化学处理设备的流程和设备
公开(公告)号：JP2006214006A
公开(公告)日：2006-08-17
申请号：JP2006026093
申请日：2006-02-02
申请人： Hoellmueller Maschinenbau Gmbh , ヘルミューラーマシネンバウゲゼルシャフトミットベシュレンクテルハフツング
发明人： KOSIKOWSKI THOMAS
IPC分类号： C25D5/18 , C25D5/08 , C25D21/00
CPC分类号： C25D5/08 , C25D5/18 , C25D7/0621 , C25D7/0657 , H05K3/241 , H05K2203/0746 , H05K2203/1492 , H05K2203/1509
摘要： PROBLEM TO BE SOLVED: To correctly perform electrolytic treatment to a surface with a whole surface or of a partial structure including perforations and/or bag holes without remarkably increasing equipment, technical cost compared with the conventional passing equipment. SOLUTION: In the equipment where a piece is transferred to be horizontally or vertically directed between electrodes in electrolytic cells (2, 3), the surface of the piece is provided with a layer for electric conduction to be subjected to electrolytic treatment on the whole or partial, the layer is provided with perforations and/or bag holes, and they are electrolytically metallized or filled, treatment in the electrolytic cells (2, 3) is performed at the intervals (20, 30) of the anode/cathode wider than 100 mm, and also, single or bipolar pulse current is fed to these electrolytic cells. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：与常规通过设备相比，为了对整个表面或包括穿孔和/或袋孔的部分结构的表面进行电解处理，而没有显着增加设备，技术成本。解决方案：在将电极转移到电解槽（2,3）中的电极之间进行水平或垂直定向的设备中，将该表面设置有电导体层以进行电解处理整个或部分的层设有穿孔和/或袋孔，并且它们被电解金属化或填充，在阳极/阴极的间隔（20,30）处在电解池（2,3）中进行处理大于100mm，并且单个或双极脉冲电流被馈送到这些电解槽。版权所有（C）2006，JPO＆NCIPI

53. 发明专利

JP2005519478A Method and apparatus for electrochemical mechanical processing microelectronic workpieces 有权
公开(公告)号：JP2005519478A
公开(公告)日：2005-06-30
申请号：JP2003574388
申请日：2003-02-28
申请人：マイクロンテクノロジーインコーポレイテッド
发明人：トラングティードアン , スコットイームーア , スコットジーメイクル , ウォンチーリー
IPC分类号： C25D5/04 , B23H3/00 , B23H5/08 , B23H5/10 , B24B1/00 , B24B7/19 , B24B37/04 , B24B49/10 , C25D5/06 , C25D5/18 , C25D5/22 , C25D5/48 , C25D7/12 , C25D17/10 , C25D17/14 , C25F3/16 , C25F7/00 , H01L21/288 , H01L21/304
CPC分类号： B24B37/042 , B23H5/08 , B23H5/10 , B24B37/04 , B24B49/10 , C25D5/06 , C25D5/18 , C25D5/22 , C25D7/12 , C25D7/123 , C25D17/001 , C25D17/10 , C25D17/14 , C25F3/16 , C25F7/00 , H01L21/32125
摘要：【課題】電気化学機械処理を使用して材料を超小型電子加工物にメッキし、材料を加工物から除去する方法及び装置を提供する。
【解決手段】超小型電子加工物の電気化学機械処理の方法及び装置。本発明による電気化学機械処理装置（１００）の一実施形態は、超小型電子加工物（１１０）を受け取るように構成された加工物ホルダ（１２０）、加工物用電極（１３０）、第１の遠隔電極（１４２ａ）、及び第２の遠隔電極（１４２ｂ）を含む。加工物用電極（１４２）は、加工物が加工物ホルダ（１２０）に受け取られた時に加工物（１１０）の処理側（１１３）と接触するように構成される。第１及び第２の遠隔電極（１４２）は、加工物ホルダ（１２０）から間隔を置いて配置される。装置（１００）はまた、ＡＣ電源（１７４）、ＤＣ電源（１７２）、及びスイッチング組立体（１８０）を含むことができる。スイッチング組立体（１８０）は、加工物用電極（１３０）、第１の遠隔電極（１４２ａ）、第２の遠隔電極（１４２ｂ）、ＡＣ電源（１７４）、及びＤＣ電源（１７２）に結合される。作動時に、スイッチング組立体（１８０）は、材料をメッキし、材料メッキを除去し、及び／又は材料を機械的に除去するために、ＡＣ電源（１７４）及び／又はＤＣ電源（１７２）を加工物用電極（１３０）、第１の遠隔電極（１４２ａ）、及び／又は第２の遠隔電極（１４２ｂ）に接続する。

54. 发明专利

JP2005503273A In cantilever and carbon nanowires on a chip, the growth of the carbon nanotube caused by the catalyst 审中-公开
公开(公告)号：JP2005503273A
公开(公告)日：2005-02-03
申请号：JP2003530605
申请日：2002-06-03
申请人：ユーティーバッテルエルエルシー , ユニバーシティーオブテネシーリサーチファンデイション
发明人：ヤイウェイ , ジェラエレス , エリアスグリーンボーム , ヴラディーミルアイ．メルクローフ , ダグラスエイチ．ラウンズ , イダリー , ジェームスウェイフリー
IPC分类号： B82B3/00 , B82B1/00 , C01B31/02 , C25D1/02 , C25D5/18 , C25D7/00 , C25D21/12 , G01Q70/16
CPC分类号： C25D21/12 , C01B32/162 , C01B32/18 , C01B2202/02 , C01B2202/06 , C25D1/02 , C25D5/18 , C25D7/00 , C25D7/0607 , G01Q70/12 , Y10S977/762 , Y10S977/843 , Y10S977/873 , Y10S977/876 , Y10T428/31504
摘要： A method is described for catalyst-induced growth of carbon nanotubes, nanofibers, and other nanostructures on the tips of nanowires, cantilevers, conductive micro/nanometer structures, wafers and the like. The method can be used for production of carbon nanotube-anchored cantilevers that can significantly improve the performance of scaning probe microscopy (AFM, EFM etc). The invention can also be used in many other processes of micro and/or nanofabrication with carbon nanotubes/fibers. Key elements of this invention include: (1) Proper selection of a metal catalyst and programmable pulsed electrolytic deposition of the desired specific catalyst precisely at the tip of a substrate, (2) Catalyst-induced growth of carbon nanotubes/fibers at the catalyst-deposited tips, (3) Control of carbon nanotube/fiber growth pattern by manipulation of tip shape and growth conditions, and (4) Automation for mass production.

55. 发明专利

JP2005015921A Plating method, and plating device utilized therefor 审中-公开
标题翻译：涂层方法及其使用的镀层器件
公开(公告)号：JP2005015921A
公开(公告)日：2005-01-20
申请号：JP2004187496
申请日：2004-06-25
申请人： Samsung Electronics Co Ltd , 三星電子株式会社
发明人： HAN SANG HOON , LEE JUN EUI , RI DOU , CHOI YOUNG CHEOL , UM TAE SEOG
IPC分类号： C25D7/12 , C25D5/00 , C25D17/28 , C25D19/00 , C25D21/00 , C25D21/12
CPC分类号： C25D17/28 , C25D5/08 , C25D5/18 , C25D17/00 , C25D17/02 , C25D17/10
摘要： PROBLEM TO BE SOLVED: To provide a plating method where the generation of defects caused by the interruption of the plating can be prevented, and to provide plating equipment utilized therefor.
SOLUTION: The plating method comprises: a stage where the product to be plated is introduced into a plating liquid charged to a plating tank; a stage (120) where a first application current for plating to the product to be plated is applied to perform plating to the product to be plated; a stage (130) where, on the interruption of the plating, a second application current with a current quantity smaller than that of the first application current is applied to the anode, so that, during the interruption of the plating, the generation in the defects of the plating in the product to be plated is prevented; and a stage (140) where, after the dissolution of the interruption in the plating, the second application current is converted into the first application current, and the plating is continued to the product to be plated.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供可以防止由电镀中断引起的缺陷的产生的电镀方法，并提供用于其的电镀设备。解决方案：电镀方法包括：将待镀产品引入装入镀槽的镀液中的阶段; 施加用于电镀到被镀产品的第一施加电流以对待镀产品进行电镀的载物台（120）在电镀中断时，将电流量小于第一施加电流的第二施加电流施加到阳极的级（130），使得在电镀中断期间，防止待镀产品中电镀的缺陷; 以及阶段（140），其中在电镀中的中断解除之后，第二施加电流被转换为第一施加电流，并且电镀继续到要镀覆的产品。版权所有（C）2005，JPO＆NCIPI

56. 发明专利

JP2004353042A Sliding member 有权
公开(公告)号：JP2004353042A
公开(公告)日：2004-12-16
申请号：JP2003153153
申请日：2003-05-29
申请人： Daido Metal Co Ltd , 大同メタル工業株式会社
发明人： KAWACHI TOSHIAKI , ISHIKAWA HIDEO , SAKAMOTO MASAAKI
IPC分类号： C22C12/00 , C23C28/00 , C25D3/56 , C25D5/10 , C25D5/18 , C25D7/10 , F16C33/12
CPC分类号： C22C12/00 , B32B15/012 , B32B15/015 , C23C28/021 , C25D3/56 , C25D5/10 , C25D5/18 , C25D7/10 , F16C33/121 , F16C2204/36 , Y10S384/912 , Y10T428/12681
摘要： PROBLEM TO BE SOLVED: To obtain satisfactory conformability in a sliding member in which an overlay layer is formed by a Bi alloy without damaging the fatigue resistance of the overlay layer. SOLUTION: A Bi alloy forming the overlay layer comprises Cu as an essential element, and also comprises at least one metal selected from Sn and In. The content of Cu in the Bi alloy is 0.1 to 10 mass%, and the total content of the element(s) selected from Sn and In is 0.5 to 10 mass%. COPYRIGHT: (C)2005,JPO&NCIPI

57. 发明专利

JP3594894B2 Via filling plating method 有权
公开(公告)号：JP3594894B2
公开(公告)日：2004-12-02
申请号：JP2000334044
申请日：2000-11-01
申请人：新光電気工業株式会社
发明人：健次中村 , 昌夫中澤
IPC分类号： H01L21/28 , C25D5/18 , C25D5/34 , C25D7/12 , H05K3/18 , H05K3/40 , H05K3/42 , H05K3/46
CPC分类号： C25D7/123 , C25D5/18 , C25D5/34 , H05K3/423 , H05K3/4644 , H05K2201/09563 , Y10S205/917

58. 发明专利

JP2004204308A Lead-free tin alloy plating method 审中-公开
公开(公告)号：JP2004204308A
公开(公告)日：2004-07-22
申请号：JP2002375604
申请日：2002-12-25
申请人： Nec Semiconductors Kyushu Ltd , Necセミコンダクターズ九州株式会社
发明人： MATSUDA MOTOAKI , IBE MASAHIRO
IPC分类号： C25D5/18 , C25D3/30 , C25D3/60 , C25D7/12 , H01L21/48 , H01L23/50 , H05K3/34
CPC分类号： H01L21/4846 , C25D3/60 , C25D5/18 , H01L21/4821 , H05K3/3473
摘要： PROBLEM TO BE SOLVED: To perform uniform alloy plating by suppressing abnormal precipitation, in a lead-free tin alloy plating method.
SOLUTION: Plating current value control is conducted so that an ON-OFF mode is intermittently repeated in plating current. The ratio a/b between the OFF time (a) and the ON time (b), is desirably controlled to ≥0.2. It is desirably controlled to about 0.3 for preventing the extension of the total plating time as for the MAX side. The period of repeating the OFF-ON is desirably controlled to 5 times/sec or lower. Further, not simple ON-OFF but ON-OFF in which reverse potential is made on the OFF time is performed.
COPYRIGHT: (C)2004,JPO&NCIPI

59. 发明专利

JP2004518022A Electrochemical coprecipitation of metal for electronic device manufacturing 审中-公开
公开(公告)号：JP2004518022A
公开(公告)日：2004-06-17
申请号：JP2002556406
申请日：2001-11-03
申请人：ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー.
发明人：アールアリングエリック , ダブリューベイズマーティン
IPC分类号： C25D5/10 , C25D5/18 , C25D7/12 , H01L21/28 , H01L21/288 , H05K3/24
CPC分类号： C25D5/18 , C25D5/10 , H01L21/2885 , H05K3/241
摘要：半導体ウェハー基板又はプリント回路基板などの電子デバイスにおける、隣接するトレースから電気的に分離した金属トレース（回路パターン等）を有する金属層の電解析出のための新規な組成物及びそれを用いた方法。本発明は、単めっき浴（電解質）によって２種の異なる金属を異なる電流密度と還元電位で析出させる、組成が調整されためっき法により分離されたトレースを提供する。

60. 发明专利

JP2004158818A Soft magnetic film and thin-film magnetic head using same soft magnetic film, as well as method for manufacturing same soft magnetic film and method for manufacturing same thin-film magnetic head 有权
公开(公告)号：JP2004158818A
公开(公告)日：2004-06-03
申请号：JP2003133447
申请日：2003-05-12
申请人： Alps Electric Co Ltd , アルプス電気株式会社
发明人： KAWASAKI MITSUO , YAZAWA HISAYUKI , KANEDA YOSHIHIRO
IPC分类号： C25D3/56 , C25D5/18 , C25D7/00 , G11B5/31 , H01F10/16 , H01F41/26 , H01L43/08
CPC分类号： C25D3/562 , C25D5/18 , C25D7/001 , G11B5/3109 , G11B5/3113 , G11B5/313 , G11B5/3163 , H01F10/16 , Y10T428/115 , Y10T428/1186 , Y10T428/1193 , Y10T428/32 , Y10T428/325
摘要： PROBLEM TO BE SOLVED: To provide a soft magnetic film which contains no impurities such as S (sulfur) and can be improved in both saturation magnetic flux density and anticorrosiveness through microcrystallization as a soft magnetic film consisting of Co and Fe, a thin-film magnetic head using the soft magnetic film, and a method for manufacturing the soft magnetic film and a method for manufacturing the thin-film magnetic head. SOLUTION: The soft magnetic film is a plated film consisting of Co and Fe and columnar crystals extending along the thickness are formed. In the present invention, the corrosion resistance can be improved by improving the surface roughness of the film surface by forming the columnar crystals extending along the thickness. Further, the saturation magnetic flux density Bs can also be improved by making the crystal fine and eliminating the need for addition of noble metal elements. Namely, a CoFe alloy of the present invention can improve both the corrosion resistance and the saturation magnetic flux density Bs and the above-mentioned saturation magnetic flux density Bs can be increased to 2.35 T or more. COPYRIGHT: (C)2004,JPO

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