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51. 发明专利

JP2005327041A Shape data conversion method and its shape data conversion system 审中-公开
标题翻译：形状数据转换方法及其形状数据转换系统
公开(公告)号：JP2005327041A
公开(公告)日：2005-11-24
申请号：JP2004143935
申请日：2004-05-13
申请人： Toshiba Corp , 株式会社東芝
发明人： NAKATANI YUJIRO , TANAKA AKIRA , FUJIYAMA KAZUNARI
IPC分类号： G06F17/50
摘要： PROBLEM TO BE SOLVED: To provide a shape data conversion method capable of converting shape information of a structure obtained after performing optimization analysis into such simple shape information as to be allowed to be equated. SOLUTION: In this first shape data conversion method, an optimization shape model of a complicated shape obtained after the optimization analysis is converted into a simpler shape capable of being nearly equated to obtain a shape conversion model. The shape data conversion method has: a shape data conversion contents selection process (step S2-step S6) recognizing and selecting information necessary when executing a shape data conversion process; a shape data conversion processing process (step S7-step S9) executing the shape data conversion process about the shape data recognized in the shape data conversion contents selection process: and a shape data conversion procedure completion confirmation process (step S10) confirming whether also performing the shape data conversion process or not, about a portion except a portion executed with the shape data conversion process in the shape data conversion processing process. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种形状数据转换方法，其能够将执行优化分析后获得的结构的形状信息转换为允许相等的简单形状信息。解决方案：在该第一形状数据转换方法中，在优化分析之后获得的复杂形状的优化形状模型被转换成能够几乎相等的更简单形状以获得形状转换模型。形状数据转换方法具有：形状数据变换内容选择处理（步骤S2：步骤S6），识别并选择执行形状数据变换处理时必要的信息; 对形状数据转换内容选择处理中识别的形状数据执行形状数据转换处理的形状数据转换处理（步骤S7-步骤S9）以及形状数据转换过程完成确认处理（步骤S10），确认是否还执行形状数据转换处理，除了在形状数据转换处理过程中与形状数据转换处理一起执行的部分之外的部分。版权所有（C）2006，JPO＆NCIPI

52. 发明专利

JP2005254254A Lead-free solder, its manufacturing method and electronic component 审中-公开
标题翻译：无铅焊枪，其制造方法和电子元器件
公开(公告)号：JP2005254254A
公开(公告)日：2005-09-22
申请号：JP2004065859
申请日：2004-03-09
申请人： Toshiba Corp , 株式会社東芝
发明人： TAN TORONRON , KURI YUUJI , TANAKA AKIRA
IPC分类号： B23K35/26 , B23K35/22 , B23K35/28 , B23K35/40 , C22C12/00 , C22C13/00 , H01L21/52 , H01L21/60
CPC分类号： H01L24/29 , H01L2924/01012 , H01L2924/01029 , H01L2924/01322 , H01L2924/01327 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide lead-free solder capable of maintaining joining strength under high temperature, and also to provide its manufacturing method and an electronic component that is hierarchically connected at high temperature using this lead-free solder.
SOLUTION: Using the lead-free solder containing, in a first alloy phase composed of an Sn base alloy, a second alloy phase composed of Sb alloy having a melting point higher than that of the first alloy phase, joining strength can be maintained at a high temperature, enabling high temperature hierarchical connection.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供能够在高温下保持接合强度的无铅焊料，并且还提供其制造方法和使用该无铅焊料在高温下分级连接的电子部件。解决方案：使用在由Sn基合金构成的第一合金相中含有熔点高于第一合金相的Sb合金的第二合金相的无铅焊料，可以是接合强度保持在高温，实现高温分层连接。版权所有（C）2005，JPO＆NCIPI

53. 发明专利

JP2005046929A Cutting method and cutting system 审中-公开
标题翻译：切割方法和切割系统
公开(公告)号：JP2005046929A
公开(公告)日：2005-02-24
申请号：JP2003203951
申请日：2003-07-30
申请人： Toshiba Corp , 株式会社東芝
发明人： SUMIYA RIE , TANAKA AKIRA , TAKAISHI KAZUTOSHI , ISHIWATARI YUTAKA , KANEKO TADASHI , SAITO YOSHIAKI
IPC分类号： B23Q15/00
摘要： PROBLEM TO BE SOLVED: To provide a cutting method and a cutting system leading out cutting conditions that can shorten machining time while minimizing the damage of a cut material based on various inputted machining conditions.
SOLUTION: This cutting system can automatically lead out the cutting conditions for shortening the machining time out of conditions to satisfy restrictions in relation to restrictions on the state of the cut material and restrictions on cutting power, using the state of the cut material and the relation between the cutting power applied to tools and the cutting conditions in cutting to form the shape of a machined material by chipping the material.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供切割方法和切割系统，其导出可以缩短加工时间的切割条件，同时基于各种输入的加工条件最小化切割材料的损伤。
解决方案：该切割系统可以自动导出切割条件，以缩短加工时间，以满足限制切割材料状态和切割功率限制的限制，使用切割材料的状态以及施加到工具的切割力与切割中的切割条件之间的关系，以通过切削材料形成加工材料的形状。版权所有（C）2005，JPO＆NCIPI

54. 发明专利

JP2005018315A Apparatus and method for evaluating integrity of structure 审中-公开
标题翻译：评估结构完整性的装置和方法
公开(公告)号：JP2005018315A
公开(公告)日：2005-01-20
申请号：JP2003180597
申请日：2003-06-25
申请人： Toshiba Corp , 株式会社東芝
发明人： FUKUDA DAIJIRO , TANAKA AKIRA , SAITO KAZUHIRO , ITO YOSHIYASU
IPC分类号： G05B19/18
摘要： PROBLEM TO BE SOLVED: To provide a method for evaluating the integrity of a structure, which can appropriately evaluate a characteristic value of the structure to be cut.
SOLUTION: The method comprises steps of setting a condition for cutting the structure to be cut; creating a parameter, which affects material of the structure if it is cut with that condition; calculating the characteristic value of the structure, which is generated when it is cut based on the created parameter; and evaluating the integrity of the structure by comparing a tolerance value with the calculated characteristic value. Furthermore, the method recalculates the parameter as required for satisfying the tolerance value if the tolerance value fails to accommodate and satisfy the characteristic value, and creates the cutting condition that satisfies the recalculated parameter.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于评估结构的完整性的方法，其可以适当地评估待切割结构的特征值。解决方案：该方法包括设置切割待切割结构的条件的步骤; 创建一个参数，如果用该条件切割则影响结构的材料; 计算基于所创建的参数切割时生成的结构的特征值; 并通过将公差值与所计算的特征值进行比较来评估结构的完整性。此外，如果公差值不能容纳并满足特征值，则该方法根据需要重新计算满足公差值的参数，并创建满足重新计算参数的切割条件。版权所有（C）2005，JPO＆NCIPI

55. 发明专利

JP2004219105A Strain sensor, and strain measuring method 审中-公开
标题翻译：应变传感器和应变测量方法
公开(公告)号：JP2004219105A
公开(公告)日：2004-08-05
申请号：JP2003003481
申请日：2003-01-09
申请人： Toshiba Corp , 株式会社東芝
发明人： FUKUDA DAIJIRO , NAKATANI YUJIRO , TANAKA AKIRA , SAITO YUJI , ISHIWATARI YUTAKA , ITO YOSHIYASU
IPC分类号： G01L1/12 , G01B7/00 , G01B7/24
摘要： PROBLEM TO BE SOLVED: To provide a strain sensor, and a strain measuring method wherein a measuring device is small, capable of accurately measuring a strain quantity of a minute specimen.
SOLUTION: The strain sensor measuring the strain quantity of the specimen is characterized by that it is formed by a super-magnetostrictive material installed in a portion measuring the strain quantity of the specimen, a coil installed near the super-magnetostrictive material in a state not contacting the super-magnetostrictive material, and inducing an electric current by electromagnetic induction of a magnetic field generated by deformation of the super-magnetostrictive material along with the specimen, and an output device measuring a current value of the electric current, and calculating and outputting the strain quantity of the specimen from the current value and a relationship between a strain quantity and a current value of a known super-magnetostrictive material.
COPYRIGHT: (C)2004,JPO&NCIPI
摘要翻译：要解决的问题：提供一种应变传感器和应变测量方法，其中测量装置小，能够精确地测量微小样品的应变量。测量样品的应变量的应变传感器的特征在于，其由安装在测量样品的应变量的部分中的超磁致伸缩材料形成，安装在超磁致伸缩材料附近的线圈不与超磁致伸缩材料接触的状态，以及通过电磁感应由超磁致伸缩材料与试样的变形产生的磁场引起的电流，以及测量电流的电流值的输出装置，以及根据当前值和应变量与已知超磁致伸缩材料的电流值之间的关系计算和输出样品的应变量。版权所有（C）2004，JPO＆NCIPI

56. 发明专利

JP2004122222A System and method of optimizing welding 审中-公开
公开(公告)号：JP2004122222A
公开(公告)日：2004-04-22
申请号：JP2002293644
申请日：2002-10-07
申请人： Toshiba Corp , 株式会社東芝
发明人： TANAKA AKIRA , SUMIYA RIE , SAITO KAZUHIRO , SAITO YUJI , NAKATANI YUJIRO , ITO YOSHIYASU
IPC分类号： B23K31/00
摘要： PROBLEM TO BE SOLVED: To eliminate waste in welding/manufacturing and to attain efficiency of manufacturing processes by obtaining welding deformation and residual stress of a welding structure through simulation and thereby enabling the optimization to be easily implemented.
SOLUTION: The system is equipped with an analytical means which determines the residual stress or deformation of a welding structure by simulation; an optimizing objective selecting means for a welding structure which is a means for selecting an objective to be optimized on the basis of the input of the residual stress or the deformation of the welding structure as obtained by the analytical means; an optimizing procedure selecting means for selecting optimizing procedures dealing with the selected objective; an optimization module selecting means for selecting an optimization module in accordance with the objective and the procedures; an optimization implementing means for carrying out the optimization based on the selected optimization module; and a deciding means for comparing the implementation result of the optimization with an allowable set value. If the result of the comparison by this deciding means is not within the allowable set value, the optimization is repeated until it comes within the allowable value.
COPYRIGHT: (C)2004,JPO

57. 发明专利

JP2004119679A Semiconductor laser device, semiconductor laser element and manufacturing method of them 审中-公开
标题翻译：半导体激光器件，半导体激光元件及其制造方法
公开(公告)号：JP2004119679A
公开(公告)日：2004-04-15
申请号：JP2002280907
申请日：2002-09-26
申请人： Toshiba Corp , 株式会社東芝
发明人： TANAKA AKIRA , WATANABE MINORU
IPC分类号： H01S5/065 , H01S5/026 , H01S5/223 , H01S5/323
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser element of an AlGaAs system whose productivity and yield are high and which can perform self-oscillation that is stable to high output, and to provide a manufacturing method of the element and a semiconductor laser device using it.
SOLUTION: The semiconductor laser element of the AlGaAs system is provided with a first No. 2 conductive clad layer and a band-like second No. 2 conductive clad layer on an active layer formed of an AlGaAs system material. The band-like second No. 2 conductive clad layer is set to be In
0.5 (Ga
1-y Al
y )
0.5 P(0.6≤y≤1), and a first No. 1 conductive clad layer to be In
0.5 (Ga
1-x Al
x )
0.5 P(0≤x≤0.2) with thickness of not less than 0.2μm. Thickness of the active layer is set to be not less than 40nm.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种AlGaAs系的半导体激光元件，其生产率和产量高，并且可以执行对高输出稳定的自激振荡，并且提供元件和半导体的制造方法激光设备使用它。解决方案：AlGaAs系统的半导体激光元件在由AlGaAs系材料形成的有源层上设置有第一2导电覆层和带状第二2导电覆层。带状第二2导电覆层被设定为In 0.5 （Ga 1-y Al y ） 0.5 ＆lt; SB＆gt; P（0.6≤y≤1），第1导电性包层为In 0.5 （Ga 1-x < ） 0.5 P（0≤x≤0.2），厚度不小于0.2μm。有源层的厚度设定为40nm以上。版权所有（C）2004，JPO

58. 发明专利

JP2004014569A Semiconductor laser and its manufacturing method 审中-公开
公开(公告)号：JP2004014569A
公开(公告)日：2004-01-15
申请号：JP2002161814
申请日：2002-06-03
申请人： Toshiba Corp , 株式会社東芝
发明人： YOSHITAKE HARUJI , TERADA TOSHIYUKI , TANAKA AKIRA
IPC分类号： H01S5/22 , H01S5/223 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/22 , H01S5/2214 , H01S5/223 , H01S5/34326
摘要： PROBLEM TO BE SOLVED: To achieve a ridge having a vertical side surface, and obtain high power from a semiconductor laser, and further suppress any kink of an optical output-current characteristic.
SOLUTION: In a semiconductor laser having a ridge, there are provided a double heterostructure including an n-type cladding layer 13, an MQW active layer 14, a p-type first cladding layer 15, a p-type etching stop layer 16, and a p-type second cladding layer 17 formed in order on an n-type GaAs substrate 10; a first ridge formed by selectively etching the p-type second cladding layer 17; a second ridge wider than the first ridge and formed by selectively etching the etching stop layer 16; and an n-type InAlP current block layer 25 formed on the side surface of each ridge.
COPYRIGHT: (C)2004,JPO

59. 发明专利

JP2003315227A Clamp for material testing machine 审中-公开
标题翻译：材料试验机夹
公开(公告)号：JP2003315227A
公开(公告)日：2003-11-06
申请号：JP2002125538
申请日：2002-04-26
申请人： Toshiba Corp , 株式会社東芝
发明人： FUKUDA DAIJIRO , NAKATANI YUJIRO , TANAKA AKIRA , SAITO YUJI , ISHIWATARI YUTAKA , ITO YOSHIYASU
IPC分类号： G01N3/04
CPC分类号： G01N2203/0417
摘要： PROBLEM TO BE SOLVED: To provide a clamp for a material testing machine with which a very small test piece can be gripped optimally without being damaged.
SOLUTION: A movable clamp part 13 is moved up to a fixed clamp part 12 via a movable mechanism part by a movement operation part 21, and a preliminary pressure to the extent of not damaging the test piece 11 is given in advance by a preliminary pressure pressurization part 22. A gripping face to the test piece 11 is formed of a porous material 17, its adsorption area is large, and a cavity at the inside of the fixed clamp part 12 or the movable clamp part 13 is made vacuum via the porous material 17 so as to grip the test piece 11. Thereby, the test piece 11 can be gripped optimally without being damaged.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供用于材料测试机的夹具，其中非常小的测试件可以被最佳地夹持而不被损坏。解决方案：可移动夹具部分13通过移动操作部分21通过可移动机构部件向上移动到固定夹紧部件12，并且预先施加到不损坏试件11的程度的预压力初步压力加压部22.试验片11的夹持面由多孔材料17形成，其吸附面积大，固定夹持部12或可动夹持部13的内部的空腔成为真空通过多孔材料17以夹持试验片11.由此，可以最佳地夹持试验片11而不损坏试验片11。版权所有（C）2004，JPO

60. 发明专利

JP2003078208A Semiconductor laser device and its manufacturing method 审中-公开
标题翻译：半导体激光器件及其制造方法
公开(公告)号：JP2003078208A
公开(公告)日：2003-03-14
申请号：JP2001263620
申请日：2001-08-31
申请人： Toshiba Corp , 株式会社東芝
发明人： KURONAGA KOICHI , TANAKA AKIRA , ITO YOSHIYUKI , WATANABE MINORU , OKUDA HAJIME
IPC分类号： H01S5/22 , H01S5/028 , H01S5/16 , H01S5/20 , H01S5/223 , H01S5/30 , H01S5/32 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/028 , H01S5/162 , H01S5/2004 , H01S5/209 , H01S5/2231 , H01S5/3211 , H01S5/3436 , H01S2301/185
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser device which is superior in a spreading angle of light, kink characteristics, and temperature characteristics, and to provide its manufacturing method.
SOLUTION: A semiconductor laser device is equipped with a first conductivity-type clad layer (103) having a certain refractive index constant in the direction of thickness; an active layer (107) formed thereon; a second conductivity-type clad layers (108 and 110) which are formed thereon, have refractive indexes constant in the direction of thickness, are provided with a ridge that is located thereon, and extends in parallel with the direction of laser resonance; and a current block layer (113) provided on each side of the ridge. A current constricted by the current block layer (113) is injected into the active layer through the intermediary of the top surface of the ridge, the first conductivity-type clad layer (103) and the second conductivity-type clad layers (108 and 110) are formed of semiconductor of nearly the same composition, and the first conductivity-type clad layer (103) is set larger in thickness than the second conductivity-type clad layers containing the ridge.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种在光的扩展角度，扭结特性和温度特性方面优异的半导体激光器件，并提供其制造方法。解决方案：半导体激光装置配备有在厚度方向上具有一定折射率常数的第一导电型覆盖层（103）形成在其上的有源层（107）在其上形成的第二导电型覆盖层（108和110）在厚度方向上的折射率恒定，设置有位于其上的脊，并且与激光谐振的方向平行延伸; 以及设置在所述脊的每一侧上的当前阻挡层（113）。由当前阻挡层（113）收缩的电流通过脊的顶表面介于有源层中，第一导电型覆盖层（103）和第二导电型覆盖层（108和110））由几乎相同组成的半导体形成，并且第一导电型覆盖层（103）的厚度设定为比包含脊的第二导电型覆盖层的厚度大。

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