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1. 发明专利

JP2004014912A Semiconductor laser diode and its manufacturing method 审中-公开
公开(公告)号：JP2004014912A
公开(公告)日：2004-01-15
申请号：JP2002168357
申请日：2002-06-10
申请人： Toshiba Corp , 株式会社東芝
发明人： TERADA TOSHIYUKI , YOSHITAKE HARUJI
IPC分类号： H01S5/223
摘要： PROBLEM TO BE SOLVED: To provide a laser diode and its manufacturing method that can reduce the leakage current when operating at a high temperature by improving the current blocking property.
SOLUTION: The side of the ridge shaped clad layer 6 forms the light guide between the current blocking layers 8 of a semiconductor laser diode, and its side parallel with the output direction is covered with a dielectric film 7 such as SiO
2 . Since the dielectric film 7 is formed at both side of the ridge shaped clad layer 6, the leakage current from this area does not increase at high temperatures (about +70°C or higher). Further, the current blocking layers 8 do not grow farther from the side of the clad layer 6 and there is nothing to stop the growth of the clad layer 6. Thus, the current blocking property is improved. Further, an etching stop layer can be provided between the p clad layer 6 and the p current diffusion layer 4 to make the processing easy.
COPYRIGHT: (C)2004,JPO

2. 发明专利

JP2006080275A Semiconductor laser device 审中-公开
标题翻译：半导体激光器件
公开(公告)号：JP2006080275A
公开(公告)日：2006-03-23
申请号：JP2004262239
申请日：2004-09-09
申请人： Toshiba Corp , 株式会社東芝
发明人： YOSHITAKE HARUJI , TERADA TOSHIYUKI , YASUDA HIDEFUMI , KATO YUKO
IPC分类号： H01S5/22
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser device which is improved in heat dissipating properties through the suppression of a mechanical stress.
SOLUTION: The semiconductor laser is equipped with a ridge which includes a first clad layer 6 formed on an active layer 5 and a second clad layer 8a arranged on the first clad layer 6, a pair of current inhibition layers 12a and 12b confronting each other on the first clad layer 6 through the ridge 11 interposed between them, and metal dummy ridges 13a and 13b arranged on the paired current inhibition layers 12a and 12b apart from the ridge 11.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供通过抑制机械应力而提高散热性能的半导体激光装置。解决方案：半导体激光器配备有脊，该脊包括形成在有源层5上的第一覆盖层6和布置在第一覆盖层6上的第二覆盖层8a，面对的一对电流抑制层12a和12b 在第一包层6上通过介于它们之间的脊11彼此隔开，并且配置在与脊11分开的成对的电流抑制层12a和12b上的金属虚设脊13a和13b。（C）2006，JPO＆NCIPI

3. 发明专利

JP2005093726A Semiconductor laser device and method for manufacturing the same 审中-公开
标题翻译：半导体激光器件及其制造方法
公开(公告)号：JP2005093726A
公开(公告)日：2005-04-07
申请号：JP2003325085
申请日：2003-09-17
申请人： Toshiba Corp , 株式会社東芝
发明人： ITO YOSHIYUKI , TERADA TOSHIYUKI , YOSHITAKE HARUJI
IPC分类号： H01S5/343 , H01S5/16 , H01S5/22 , H01S5/223 , H01S5/32
CPC分类号： B82Y20/00 , H01S5/22 , H01S5/3215 , H01S5/34326
摘要： PROBLEM TO BE SOLVED: To realize higher optical outputting than heretofore in a semiconductor laser device that emits a laser light from its cleavage end face and its manufacturing method.
SOLUTION: The semiconductor laser device is provided with a double hetero-junction structure having an n-type clad layer, an active layer, and a p-type clad layer; a second p-type clad layer that is formed thereon, and contains a first dopant and has a ridge shape; a p-type contact layer that is formed on the second p-type clad layer, and contains a second dopant whose diffusion speed is lower than that of the first dopant; a dielectric film covering a surface where the second p-type clad layer is not formed on the side surface of the second p-type clad layer, the side surface of the p-type contact layer, and the double hetero-junction structure; and a p-side electrode formed on the p-type contact layer. In addition, the semiconductor laser device is provided with the same double hetero-junction structure, a second p-type clad layer, a p-type contact layer, and a p-side electrode, and the cleavage end face of the double hetero-junction structure has a disordered layer structure.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了实现比从其解理端面发射激光的半导体激光器件中更高的光学输出及其制造方法。解决方案：半导体激光器件具有具有n型覆盖层，有源层和p型覆盖层的双异质结结构; 第二p型覆盖层，其形成在其上，并且包含第一掺杂剂并具有脊形; p型接触层，其形成在所述第二p型覆盖层上，并且包含扩散速度低于所述第一掺杂剂的扩散速度的第二掺杂剂; 覆盖在第二p型覆盖层的侧面，p型接触层的侧面和双异质结结构的侧面上不形成第二p型覆盖层的表面的电介质膜; 以及形成在p型接触层上的p侧电极。此外，半导体激光器件具有相同的双异质结结构，第二p型覆盖层，p型接触层和p侧电极，并且双异质结结构的解理端面，结结构具有无序的层结构。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2004014569A Semiconductor laser and its manufacturing method 审中-公开
公开(公告)号：JP2004014569A
公开(公告)日：2004-01-15
申请号：JP2002161814
申请日：2002-06-03
申请人： Toshiba Corp , 株式会社東芝
发明人： YOSHITAKE HARUJI , TERADA TOSHIYUKI , TANAKA AKIRA
IPC分类号： H01S5/22 , H01S5/223 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/22 , H01S5/2214 , H01S5/223 , H01S5/34326
摘要： PROBLEM TO BE SOLVED: To achieve a ridge having a vertical side surface, and obtain high power from a semiconductor laser, and further suppress any kink of an optical output-current characteristic.
SOLUTION: In a semiconductor laser having a ridge, there are provided a double heterostructure including an n-type cladding layer 13, an MQW active layer 14, a p-type first cladding layer 15, a p-type etching stop layer 16, and a p-type second cladding layer 17 formed in order on an n-type GaAs substrate 10; a first ridge formed by selectively etching the p-type second cladding layer 17; a second ridge wider than the first ridge and formed by selectively etching the etching stop layer 16; and an n-type InAlP current block layer 25 formed on the side surface of each ridge.
COPYRIGHT: (C)2004,JPO

5. 发明专利

JP2003046121A Semiconductor light-emitting element and manufacturing method therefor 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：JP2003046121A
公开(公告)日：2003-02-14
申请号：JP2001232149
申请日：2001-07-31
申请人： Toshiba Corp , 株式会社東芝
发明人： TAKIMOTO KAZUHIRO , YAMASHITA ATSUKO , MATSUDA SHIZUE , SUGIYAMA HITOSHI , YOSHITAKE HARUJI , EGASHIRA KATSU
IPC分类号： H01L33/14 , H01L33/30 , H01L33/58 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To prevent degradation in light takeout efficiency due to total reflection at the border between a transparent resin and the top layer of a semiconductor multilayer film containing a light-emitting layer for improved light takeout efficiency.
SOLUTION: The semiconductor light-emitting element takes light out of a surface opposite to a substrate, in which a double hetero structure 20 of an InGaAlP material, where an active layer is sandwiched between an n-type and p-type clad layers, is formed on an n-type GaAs substrate 10, over which a p-type GaP current diffusion layer 30 is grown. The current diffusion layer 30 is convexed upward while the substrate 10 is convexed downward.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：为了防止由于透明树脂与含有发光层的半导体多层膜的顶层之间的边界处的全反射而导致的光取出效率的劣化，从而提高了光取出效率。解决方案：半导体发光元件从与衬底相对的表面取出光，其中有源层夹在n型和p型覆盖层之间的InGaAlP材料的双异质结构20是形成在n型GaAs衬底10上，在其上生长p型GaP电流扩散层30。电流扩散层30向上凸起，同时衬底10向下凸起。

6. 发明专利

JP2000261042A SEMICONDUCTOR LIGHT EMITTING ELEMENT AND MANUFACTURE OF THE SAME 失效
公开(公告)号：JP2000261042A
公开(公告)日：2000-09-22
申请号：JP5779199
申请日：1999-03-05
申请人： TOSHIBA CORP
发明人： YOSHITAKE HARUJI , NOZAKI HIDEKI
IPC分类号： H01L21/31 , H01L33/10 , H01L33/14 , H01L33/20 , H01L33/30 , H01L33/42 , H01L33/44 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element for preventing leakage currents between an n-type clad layer and a p-type clad layer, and for improving ESD breakdown strength, and a method for manufacturing this. SOLUTION: A trench 12, whose cross-section is V-shaped, and whose depth reaches an n-type clad layer 3, is formed in an element isolation region between the light emitting elements of a wafer for forming a semiconductor light emitting element formed until an upper electrode 11, and filled with an insulating film 13, such as a silicon oxide film or a silicon nitride film. Afterwards, the back face of a GaAs substrate 1 is cut so that prescribed thickness can be obtained, and a lower electrode 14 is formed. Then, chip integration into an LED element is carried out by a scribe process.

7. 发明专利

JPH09260343A SEMICONDUCTOR EQUIPMENT AND MANUFACTURING METHOD 失效
公开(公告)号：JPH09260343A
公开(公告)日：1997-10-03
申请号：JP6675696
申请日：1996-03-22
申请人： TOSHIBA CORP
发明人： YASUDA HIDEFUMI , YOSHITAKE HARUJI , KAMURA MAYUMI , MATSUNAGA NORIHIKO
IPC分类号： H01L21/306
摘要： PROBLEM TO BE SOLVED: To enhance uniformity of etching in a wafer in a spin etcher for etching an insulation film on the wafer face. SOLUTION: A wafer HW is held by a wafer holding part in a chamber. Under this condition, an evaporated etchant AE from an evaporated etchant introducer is heated by a heater and introduced into the chamber. It is sprayed substantially uniformly onto the e entire face of the wafer HW from an injection port of a shower plate. Thereafter, the wafer HW is cooled by a cooler, and the evaporated etchant AE sprayed onto a face of the wafer HW is liquefied. The wafer HW is spinned by a motor and a below insulation film 31 is etched according to a pattern of a resist film 32.

8. 发明专利

JP2003174191A SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
公开(公告)号：JP2003174191A
公开(公告)日：2003-06-20
申请号：JP2002179915
申请日：2002-06-20
申请人： TOSHIBA CORP
发明人： YOSHITAKE HARUJI , SEKIGUCHI HIDEKI , YAMASHITA ATSUKO , TAKIMOTO KAZUHIRO , TAKAHASHI KOICHI
IPC分类号： H01L21/205 , H01L33/14 , H01L33/22 , H01L33/30 , H01L33/38 , H01L33/42 , H01L33/44 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To prevent light-deriving efficiency from decreasing due to the influence of the total reflection of light at the boundary between the uppermost layer of a semiconductor multilayer film containing an emission layer and a transparent resin, and to improve the light-deriving efficiency. SOLUTION: A double hetero structure section is formed on an n-type GaAs substrate 110, where the double hetero structure section comprises an n-type InAIP cladding layer 112, an InGaAIP active layer 113, and a p-type AIP cladding layer 114. On the double hetero structure section, a p-type InGaP current diffusion layer 115, and a p-type GaAs contact layer 116 are formed. Then, in a green LED where a p-side electrode 118 is partially formed on the contact layer 116, a reflection prevention film 117 is formed at a portion where no electrodes 118 are formed on the contact layer 116. The surface of the reflection prevention film 117 is subjected to roughening machining, thus setting the surface roughness (PV value (max-min)) to 200 nm or higher and an emission wavelength or less. COPYRIGHT: (C)2003,JPO

9. 发明专利

JP2000058909A SEMICONDUCTOR LIGHT EMITTING ELEMENT 失效
公开(公告)号：JP2000058909A
公开(公告)日：2000-02-25
申请号：JP22323898
申请日：1998-08-06
申请人： TOSHIBA CORP
发明人： YOSHITAKE HARUJI , TERADA TOSHIYUKI
IPC分类号： H01L33/14 , H01L33/30 , H01L33/42 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element, which has a structure wherein a uniform current is made to flow to an LED operating region uniformly so as not, to generate the unbalanced concentration of a current when an LED is operated, and in which, as a result, the product life of the LED is made long. SOLUTION: A first clad layer 12, an active layer 13, a second clad layer 14, a current diffusion layer 15 and a contact layer 16 are laminated sequentially on a substrate 11. A lower-part electrode 10 is formed on the rear side of the substrate 11 on the opposite side of a laminated structure. A current blocking layer 17 is formed partly on the surface of the laminated structure. A translucent transparent electrode 18 covers the current blocking layer 17 and the second clad layer 14. An upper-part electrode 19 is connected to the surface of the transparent electrode 18, it is formed so as to cover the upper part of the current blocking layer 17, it is extended up to the surface of the neighboring transparent electrode 18 via a step by the side part in the whole circumference of the current blocking layer 17, and it compensates the coverage of the transparent electrode 18 in the step of the current blocking layer 17.

10. 发明专利

JP2003209283A SEMICONDUCTOR LIGHT EMITTING ELEMENT AND ITS MANUFACTURING METHOD 审中-公开
公开(公告)号：JP2003209283A
公开(公告)日：2003-07-25
申请号：JP2002006452
申请日：2002-01-15
申请人： TOSHIBA CORP
发明人： YOSHITAKE HARUJI , TAKAHASHI KOICHI , NUNOTANI NOBUHITO , OHASHI KENICHI
IPC分类号： H01L33/14 , H01L33/16 , H01L33/22 , H01L33/30 , H01S5/183 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To increase light extraction efficiency by preventing deterioration of light extraction efficiency which is to be caused by influence of total refection on a boundary between the uppermost layer of a semiconductor multilayer film and transparent resin. SOLUTION: In an LED, a double heterostructure wherein an InGaAlP active layer 13 is sandwiched between an n-type InAlP clad layer 12 and a p-type InAlP clad layer 14 is formed on an n-type GaAs substrate 10 of a face whose plane direction is (100), p-type GaAlAs current diffusion layers 15, 17 are formed on the double heterostructure, and a light is led out from a surface opposite to the substrate 10. A surface which is a (100) face of the current diffusion layer 17 on a light extraction surface side of the double heterostructure is worked, a (111) face is exposed, HCI treatment is performed to the exposed (111) face, and fine unevenness is formed. COPYRIGHT: (C)2003,JPO

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