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51. 发明专利

JPS61222189A SEMICONDUCTOR LASER 失效
公开(公告)号：JPS61222189A
公开(公告)日：1986-10-02
申请号：JP5260685
申请日：1985-03-15
申请人： SHARP KK
发明人： TAKIGUCHI HARUHISA , KANEIWA SHINJI , YOSHIDA TOMOHIKO , MATSUI KANEKI
IPC分类号： H01S5/00 , H01S5/12
摘要： PURPOSE:To enable stable single mode oscillation regardless of the reflectivity of the surface of a DFB laser, phase thereof and the value of a coupling constant by forming two upper and lower guide layers holding an active layer and shaping diffraction gratings at mutually different pitches to both guide layers. CONSTITUTION:A diffraction grating 12 at pitches DELTA1 is processed to the surface of an N-type InP substrate 11, an N-type GaInAsP guide layer 13, an undoped GaInAsP active layer 14 and a P-type GaInAsP guide layer 15 are grown on the diffraction grating 12 guide of the substrate 11 through an epitaxial growth method, and a diffraction grating at pitches DELTA (DELTA2>DELTA1) is processed to the surface of the P-type guide layer 15. A P-type InP clad layer 16 and a P-type GaInAsP cap layer 17 are grown continuously through the epitaxial growth method again, thus manufacturing a multilayer crystal structure wafer for oscillating a laser having double hetero-junction structure. The mixed crystal ratios of the two upper and lower optical guide layers 13, 15 holding the active layer 14 are set so that refractive indices thereof are made smaller than that of the active layer 14 and forbidden band width thereof larger than that of the active layer 14 at that time.

52. 发明专利

JPS612380A SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPS612380A
公开(公告)日：1986-01-08
申请号：JP12421084
申请日：1984-06-14
申请人： SHARP KK
发明人： KANEIWA SHINJI , TAKIGUCHI HARUHISA , MATSUI KANEKI , TANETANI MOTOTAKA
IPC分类号： H01S5/00 , H01S5/24
摘要： PURPOSE:To inhibit a remote junction state, and to improve quality by adding a dopant having diffusion properties to an active layer for oscillating a laser so as to form carrier concentration lower than an adjacent layer and suppressing a solid phase diffusion to the adjacent layer. CONSTITUTION:An n-GaAs current stopping layer 2 is deposited onto a p-GaAs substrate 1, and a striped V-shaped groove 3 reaching to the substrate 1 from the layer 2 is notched at a central section to open a current path. A p-GaAl As clad layer 4, a p-InGaAs active layer 5, an n-GaAlAs clad layer 6 and an n-GaAs cap layer 7 are grown on the layer 2 in an epitaxial manner in succession as multilayer crystal layers for oscillating a laser. Mg is added to the active layer 5 as a p type impurity, and carrier concentration is brought to a value sufficiently lower than the layer 6. Electrodes 8, 9 are evaporated and formed.

53. 发明专利

JPS6023517B2 失效
公开(公告)号：JPS6023517B2
公开(公告)日：1985-06-07
申请号：JP16984379
申请日：1979-12-25
申请人： SHARP KK
发明人： YAMAMOTO SABURO , YANO MORICHIKA , KURATA YUKIO , MATSUI KANEKI , HAYAKAWA TOSHIRO , TAKIGUCHI HARUHISA
IPC分类号： H01L21/208 , H01S5/00 , H01S5/223 , H01S5/24

54. 发明专利

JPS5990982A SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPS5990982A
公开(公告)日：1984-05-25
申请号：JP20255282
申请日：1982-11-17
申请人： SHARP KK
发明人： TAKIGUCHI HARUHISA , MATSUI KANEKI
IPC分类号： H01S5/00 , H01S5/10 , H01S5/16
摘要： PURPOSE:To obtain the novel available semiconductor laser element, which prevents the increase of noises while having a gain waveguide mechanism and in which a coupling with an optical system can be improved, by providing a refractive index waveguide mechanism and executing a vertical multi-mode oscillation. CONSTITUTION:A current confining layer 2 consisting of N-GaAs for limiting a current path, a P type clad layer 3 consisting of P-GaAlAs, an active layer 4 and an optical guide layer 5 consisting of P or N-GaAlAs (or GaAs), an N type clad layer 6 consisting of N-GaAlAs, and a cap layer 7 consisting of N-GaAs are laminated on a P-GaAs substrate 1 in succession through a liquid epitaxial growth method. A P side electrode consisting of Au-Zn is evaporated and formed to the GaAs substrate 1 and an N side electrode consisting of Au-Ge-Ni-Au to the cap layer 7. Accordingly, currents do not flow through a region, to which the current confining layer 2 interposes, because it is joined at negative polarity, and only a striped groove section from which the current confining layer 2 is removed functions as a current path.

55. 发明专利

JPS57127935A PICKUP DEVICE 失效
公开(公告)号：JPS57127935A
公开(公告)日：1982-08-09
申请号：JP1192881
申请日：1981-01-28
申请人： SHARP KK
发明人： TAKIGUCHI HARUHISA , KURATA YUKIO , MATSUI KANEKI
IPC分类号： G02B7/28 , G11B7/09
摘要： PURPOSE:To achieve sure control with a simple optical system, by splitting a photodetector into four around an optical axis, using a knife edge for focus control and detecting an output difference through the difference among the light amount to be reflected for track control. CONSTITUTION:An output light from a laser 1 is irradiated on a disc 9 via an objective lens 2, a 1/4 wavelength plate 3, a condenser lens 4, and a reflected light is irradiated to a detector 6' via a beam splitter 5. Since a knife edge 8 is located at the image forming point and the amount of light to upper and lower two sets of photodetectors of the detector 6' is changed depending on the distance between the disc 9 and the pickup, this is used for focus control. Since the amount of light of the detector 6' to left and right photodetectors is changed depending on the shift of center of information pits 10, tracking is made by using this.

56. 发明专利

JPS56116688A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPS56116688A
公开(公告)日：1981-09-12
申请号：JP2029680
申请日：1980-02-19
申请人： SHARP KK
发明人： YANO MORICHIKA , YAMAMOTO SABUROU , KURATA YUKIO , MATSUI KANEKI , HAYAKAWA TOSHIROU , TAKIGUCHI HARUHISA
IPC分类号： H01S5/00 , H01S5/227
摘要： PURPOSE:To facilitate manufacture of a semiconductor laser device and improve its reliability by surrounding the mesa structure with a photoresist. CONSTITUTION:On an N type semiconductor substrate 1, an N type layer 2, a P type layer 3 to be an active region, a P type layer 4 and a P type layer 5 are successively grown. Then, mesa etching is applied to the layers 2-5 so as to reach the substrate 1. Then, the mesa structure portion is coated with a photoresist 6 so that the surface of the layer 5 is exposed from the resist 6. Then, an electrode 8 is formed over the layer 5 and the resist 6, and another electrode 9 on the substrate 1. Thereby, the resist 6, which has a lower refractive index than the layer 3 as an active region, can trap the light from the layer 3. By said structure, the number of the liquid phase epitaxial growth needed for manufacture of a laser device can be reduced to only one, so that the manufacture is facilitated as well as the reliability is improved.

57. 发明专利

JPS5691490A SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPS5691490A
公开(公告)日：1981-07-24
申请号：JP16984379
申请日：1979-12-25
申请人： SHARP KK
发明人： YAMAMOTO SABUROU , YANO MORICHIKA , KURATA YUKIO , MATSUI KANEKI , HAYAKAWA TOSHIROU , TAKIGUCHI HARUHISA
IPC分类号： H01L21/208 , H01S5/00 , H01S5/223 , H01S5/24
摘要： PURPOSE:To make lateral mode stable fine spot oscillation and reduce the threshold value current by forming a laser oscillation range with the central portion at the center of the 2-step type V-groove of the surface of a substrate crystal of a first clad layer grown thicker than the other portions. CONSTITUTION:A current limiting layer 16 is ipitaxially grown on the surface of a substrate crystal, and a 2-stage type V-groove 20 is provided of which the opening angle at the center there of is smaller than that at the both side portions. A double hetero-structure is formed by growing a first clad layer 13 and a second clad layer 14 of N type so that a P type active layer 12 may be sandwiched therebetween. Only the central portion where the opening angle of the groove 20 is small of the layer 13 is grown thick to form a laser oscillation range and the other portions is grown thin to form luminescence absorbing range by extremely cutting down growth duration. Thereby, lateral mode stable fine spot oscillation can be obtained.

58. 发明专利

JP2001185813A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JP2001185813A
公开(公告)日：2001-07-06
申请号：JP2000394104
申请日：2000-12-26
申请人： SHARP KK
发明人： NAKANISHI CHITOSE , TAKIGUCHI HARUHISA
IPC分类号： H01S5/223
摘要： PROBLEM TO BE SOLVED: To obtain a real refractive index waveguide structure by optimizing the waveguide loss of an internal stripe structure. SOLUTION: The semiconductor laser device comprises an internal stripe structure as a current narrowing function. In this case, a plurality of regions having different equivalent refractive indexes in the stripes. The relationship between the equivalent refractive index n1 at the center in the stripe and the equivalent refractive indexes n2 of both sides in the stripe is larger in the order of the center and the both sides (n1>n2), and the absorption coefficient of the horizontal direction including the stripe is divided into at least three or more regions. The coefficient α1 at the center and coefficients α2 at both sides are substantially zero, and the coefficient α3 out of the stripe. Then, the width of the region at the center of the stripe is sufficiently narrow to guide the light to the real refractive index guide.

59. 发明专利

JPH11143388A DARK FIELD PROJECTION DISPLAY 失效
公开(公告)号：JPH11143388A
公开(公告)日：1999-05-28
申请号：JP24878898
申请日：1998-09-02
申请人： SHARP KK
发明人： ANDERSON DUNCAN JAMES , ROBERT GEORGE WATLING BROWN , MAYHEW NICHOLAS , ROBINSON MICHAEL GERAINT , SLACK JASON , TAKIGUCHI HARUHISA , TOMBLING GRAIG
IPC分类号： G09F9/00 , G02B19/00 , G02B27/00 , H04N5/74
摘要： PROBLEM TO BE SOLVED: To provide a dark field projection display having a compact light source and substantially uniform intensity in a spatial light modulator. SOLUTION: The dark field projection display has the spatial light modulator 7 and a lamp 1 and a reflector 2 which are a light source. Light from the light source 1 and 2 is made incident upon plural optical partial systems. The optical partial system is e.g. a divided Fresnel lens 3 of which lens parts 3a and 3b are relatively deviated. The partial system 3 form the spatial distribution of an image from the light source 1 and 2. The relative position of an original image is different from the relative positions of input aperture parts of the partial systems 3a and 3b. Plural reflectors consisting of a mirror-like corner cube, a microlens 4, etc., constituted as a vertical array receive the original image and form an image 8 superposed on the modulator 7.

60. 发明专利

JPH06275916A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPH06275916A
公开(公告)日：1994-09-30
申请号：JP6439193
申请日：1993-03-23
申请人： SHARP KK
发明人： OKUMURA TOSHIYUKI , TAKIGUCHI HARUHISA
IPC分类号： H01S5/00 , H01S5/042 , H01S5/062 , H01S5/065 , H01S3/18
摘要： PURPOSE:To obtain a low-cost semiconductor laser device of a self-excited oscillation type which has a low noise characteristic for a light output from a low to high one and a simple drive circuit. CONSTITUTION:In a semiconductor laser 1 having an internal stripe structure, an electrode on one side is divided in a plurality. A first electrode 2 and a second electrode 3 formed by division are provided with constant current sources 4 and 5 respectively, and at the time of a low output, a current is made to flow uniformly through each of the two electrodes 2 and 3, so as to make them conduct self-excited oscillation. At the time of a high output, a current made to flow through either one of the two divided electrodes 2 and 3 is made to be of an oscillation threshold current density or below and an active layer and a current block layer being the lower layers of the electrode are ensured as an oversaturated region. Laser oscillation is effected only in the lower layer region of the other electrode.

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